*
**********************************************************
*
* 2PA1576Q
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 270 @ 6V/1mA
* 
*
* 
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
* 
* 
* Simulator: Spice 2  
*  
**********************************************************
*#
.MODEL Q2PA1576Q PNP
+     IS=1.604E-14
+     NF=0.9982
+     ISE=3.351E-15
+     NE=1.397
+     BF=212.1
+     IKF=0.08039
+     VAF=37.2
+     NR=1.006
+     ISC=1.842E-14
+     NC=1.2  
+     BR=7.351
+     IKR=0.047
+     VAR=11.42
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.692
+     RC=0.6886
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.307E-11
+     VJE=0.7282
+     MJE=0.396
+     TF=6.839E-10
+     XTF=9.882
+     VTF=5.669  
+     ITF=0.2739
+     PTF=0
+     CJC=6.848E-12
+     VJC=0.364
+     MJC=0.3835  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99 
.ENDS
**
**********************************************************
*
* 2PA1576R
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*  
* 
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PA1576R PNP 
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79 
.ENDS
**
**********************************************************
*
* 2PA1576S
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 270 - 560 @ 6V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
* 
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PA1576S PNP
+     IS=2.515E-14
+     NF=0.993
+     ISE=3.596E-15
+     NE=1.414
+     BF=406.2 
+     IKF=0.08039
+     VAF=27.54
+     NR=0.998
+     ISC=5.876E-15
+     NC=1.15  
+     BR=12.22
+     IKR=0.02471
+     VAR=9.183
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.5387
+     RC=0.6883
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.117E-11 
+     VJE=0.775
+     MJE=0.432
+     TF=5.807E-10
+     XTF=4.339
+     VTF=7.041
+     ITF=0.1482
+     PTF=0
+     CJC=7.054E-12
+     VJC=0.678
+     MJC=0.6696  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8101
.ENDS
**
**********************************************************
*
* 2PA1774QM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 120 - 270 @ 6V/1mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*  
* Extraction date (week/year): 30/2003         
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL Q2PA1774QM PNP 
+ IS = 1.242E-014 
+ NF = 0.9861 
+ ISE = 5.393E-015 
+ NE = 1.456 
+ BF = 260 
+ IKF = 0.09 
+ VAF = 39.15 
+ NR = 0.9839 
+ ISC = 1.252E-014 
+ NC = 1.088 
+ BR = 13 
+ IKR = 0.02 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.115 
+ MJE = 0.4583 
+ TF = 6.3E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.14 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.5859 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 7.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7059 
.ENDS
**
**********************************************************
*
* 2PA1774Q
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 270 @ 6V/1mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*  
*      
* Simulator: Spice 2  
*
**********************************************************
*#
.MODEL Q2PA1774Q PNP 
+ IS = 1.242E-014 
+ NF = 0.9861 
+ ISE = 5.393E-015 
+ NE = 1.456 
+ BF = 260 
+ IKF = 0.09 
+ VAF = 39.15 
+ NR = 0.9839 
+ ISC = 1.252E-014 
+ NC = 1.088 
+ BR = 13 
+ IKR = 0.02 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.115 
+ MJE = 0.4583 
+ TF = 6.3E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.14 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.5859 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 7.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7059 
.ENDS
**
**********************************************************
*
* 2PA1774RM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*  
* Extraction date (week/year): 30/2003       
* Simulator: Spice 3  
*
**********************************************************
*#
.MODEL Q2PA1774RM PNP 
+ IS = 1.366E-014 
+ NF = 0.9882 
+ ISE = 4.769E-015 
+ NE = 1.495 
+ BF = 295 
+ IKF = 0.08 
+ VAF = 39.15 
+ NR = 0.9847 
+ ISC = 5.554E-015 
+ NC = 1.144 
+ BR = 11 
+ IKR = 0.025 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.044 
+ MJE = 0.4465 
+ TF = 5.3E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.729 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 5.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9059 
.ENDS
**
**********************************************************
*
* 2PA1774R
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*  
*        
* Simulator: Spice 2 
*
**********************************************************
*#
.MODEL Q2PA1774R PNP 
+ IS = 1.366E-014 
+ NF = 0.9882 
+ ISE = 4.769E-015 
+ NE = 1.495 
+ BF = 295 
+ IKF = 0.08 
+ VAF = 39.15 
+ NR = 0.9847 
+ ISC = 5.554E-015 
+ NC = 1.144 
+ BR = 11 
+ IKR = 0.025 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.044 
+ MJE = 0.4465 
+ TF = 5.3E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.729 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 5.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9059 
.ENDS
**
**********************************************************
*
* 2PA1774SM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 270 - 560 @ 6V/1mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 30/2003  
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL Q2PA1774SM PNP 
+ IS = 1.366E-014 
+ NF = 0.9882 
+ ISE = 4.769E-015 
+ NE = 1.495 
+ BF = 295 
+ IKF = 0.08 
+ VAF = 39.15 
+ NR = 0.9847 
+ ISC = 2.229E-014 
+ NC = 1.193 
+ BR = 9 
+ IKR = 0.025 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.004 
+ MJE = 0.4497 
+ TF = 6.2E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.4178 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 6E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9059 
.ENDS
**
**********************************************************
*
* 2PA1774S
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 270 - 560 @ 6V/1mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PA1774S PNP 
+ IS = 1.366E-014 
+ NF = 0.9882 
+ ISE = 4.769E-015 
+ NE = 1.495 
+ BF = 295 
+ IKF = 0.08 
+ VAF = 39.15 
+ NR = 0.9847 
+ ISC = 2.229E-014 
+ NC = 1.193 
+ BR = 9 
+ IKR = 0.025 
+ VAR = 9.5 
+ RB = 280 
+ IRB = 6E-005 
+ RBM = 1.4 
+ RE = 0.54 
+ RC = 0.41 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.197E-011 
+ VJE = 1.004 
+ MJE = 0.4497 
+ TF = 6.2E-010 
+ XTF = 7 
+ VTF = 7 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 6.828E-012 
+ VJC = 0.4178 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 6E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9059 
.ENDS
**
**********************************************************
*
* 2PB1219AQ
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 85 - 170 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL Q2PB1219AQ PNP 
+ IS = 6.637E-014 
+ NF = 0.9909 
+ ISE = 3.699E-015 
+ NE = 1.352 
+ BF = 191 
+ IKF = 0.1868 
+ VAF = 3.066 
+ NR = 0.992 
+ ISC = 2.511E-014 
+ NC = 1.152 
+ BR = 16 
+ IKR = 0.8297 
+ VAR = 20 
+ RB = 11 
+ IRB = 0.00015 
+ RBM = 1.6 
+ RE = 0.145 
+ RC = 0.09035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.039E-011 
+ VJE = 0.7603 
+ MJE = 0.3903 
+ TF = 1.167E-009 
+ XTF = 25 
+ VTF = 2 
+ ITF = 2.81 
+ PTF = 0 
+ CJC = 2.653E-011 
+ VJC = 0.1704 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 1.4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9259 
.ENDS
**
**********************************************************
*
* 2PB1219AR
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 120 - 240 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PB1219AR PNP 
+ IS = 6.637E-014 
+ NF = 0.9909 
+ ISE = 3.699E-015 
+ NE = 1.352 
+ BF = 191 
+ IKF = 0.1868 
+ VAF = 3.066 
+ NR = 0.992 
+ ISC = 2.511E-014 
+ NC = 1.152 
+ BR = 16 
+ IKR = 0.8297 
+ VAR = 20 
+ RB = 11 
+ IRB = 0.00015 
+ RBM = 1.6 
+ RE = 0.145 
+ RC = 0.09035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.039E-011 
+ VJE = 0.7603 
+ MJE = 0.3903 
+ TF = 1.167E-009 
+ XTF = 25 
+ VTF = 2 
+ ITF = 2.81 
+ PTF = 0 
+ CJC = 2.653E-011 
+ VJC = 0.1704 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 1.4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9259 
.ENDS
**
**********************************************************
*
* 2PB1219AS
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 170 - 340 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL Q2PB1219AS PNP 
+ IS = 6.637E-014 
+ NF = 0.9909 
+ ISE = 3.699E-015 
+ NE = 1.352 
+ BF = 191 
+ IKF = 0.1868 
+ VAF = 3.066 
+ NR = 0.992 
+ ISC = 2.511E-014 
+ NC = 1.152 
+ BR = 16 
+ IKR = 0.8297 
+ VAR = 20 
+ RB = 11 
+ IRB = 0.00015 
+ RBM = 1.6 
+ RE = 0.145 
+ RC = 0.09035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.039E-011 
+ VJE = 0.7603 
+ MJE = 0.3903 
+ TF = 1.167E-009 
+ XTF = 25 
+ VTF = 2 
+ ITF = 2.81 
+ PTF = 0 
+ CJC = 2.653E-011 
+ VJC = 0.1704 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 1.4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9259 
.ENDS
**
**********************************************************
*
* 2PB1424
*
* NXP Semiconductors
*
* Low-VCEsat-transistor (PNP)
* IC   = 3 A
* VCEO = 20 V 
* hFE  = 180 - 390 @ 2V/0,1A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 46/2007 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT 2PB1424 1 2 3
*
Q1 1 2 3 2PB1424
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PB1424 PNP 
+ IS = 3.682E-013 
+ NF = 0.9845 
+ ISE = 1.02E-013 
+ NE = 1.452 
+ BF = 246.4 
+ IKF = 2.6 
+ VAF = 30 
+ NR = 0.985 
+ ISC = 8.035E-014 
+ NC = 1.15 
+ BR = 126.1 
+ IKR = 8 
+ VAR = 11 
+ RB = 11 
+ IRB = 0.0001406 
+ RBM = 0.4 
+ RE = 0.02 
+ RC = 0.057 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.952E-010 
+ VJE = 0.8026 
+ MJE = 0.3982 
+ TF = 1.1E-009 
+ XTF = 4 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.06E-010 
+ VJC = 0.4574 
+ MJC = 0.3251 
+ XCJC = 1 
+ TR = 1.3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 4.786E-014 
+ N = 1.103 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.213 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB709ARL
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT 2PB709ARL 1 2 3
*
Q1 1 2 3 2PB709ARL
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PB709ARL PNP 
+ IS = 1.812E-014 
+ NF = 0.9965 
+ ISE = 1.531E-015 
+ NE = 1.371 
+ BF = 243.3 
+ IKF = 0.055 
+ VAF = 15 
+ NR = 0.995 
+ ISC = 5.561E-015 
+ NC = 1.119 
+ BR = 11.27 
+ IKR = 0.019 
+ VAR = 15 
+ RB = 67 
+ IRB = 0.0003 
+ RBM = 6 
+ RE = 0.5449 
+ RC = 0.53 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.102E-011 
+ VJE = 0.795 
+ MJE = 0.4 
+ TF = 8.2E-010 
+ XTF = 17 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 6.031E-012 
+ VJC = 0.65 
+ MJC = 0.545 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 4.786 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 205.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB709AR
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 A
* VCEO = 45 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 2      
*
**********************************************************
*#
.MODEL Q2PB709AR PNP 
+ IS = 1.489E-14 
+ NF = 0.9902 
+ ISE = 2.952E-15 
+ NE = 1.381 
+ BF = 270 
+ IKF = 0.055 
+ VAF = 50 
+ NR = 0.99 
+ ISC = 8.349E-15 
+ NC = 1.126 
+ BR = 7.5 
+ IKR = 0.023 
+ VAR = 20 
+ RB = 237 
+ IRB = 5E-05 
+ RBM = 1 
+ RE = 0.4 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.205E-11 
+ VJE = 0.7414 
+ MJE = 0.3803 
+ TF = 5.1E-10 
+ XTF = 5 
+ VTF = 5 
+ ITF = 0.14 
+ PTF = 0 
+ CJC = 6.263E-12 
+ VJC = 0.5872 
+ MJC = 0.3726 
+ XCJC = 1 
+ TR = 1.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* 2PB709ART
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 05/2007 
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT 2PB709ART 1 2 3
*
Q1 1 2 3 2PB709ART
D1 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation.
*
.MODEL 2PB709ART PNP 
+ IS = 3.682E-013 
+ NF = 0.9845 
+ ISE = 1.02E-013 
+ NE = 1.452 
+ BF = 246.4 
+ IKF = 2.6 
+ VAF = 30 
+ NR = 0.985 
+ ISC = 8.035E-014 
+ NC = 1.15 
+ BR = 126.1 
+ IKR = 8 
+ VAR = 11 
+ RB = 11 
+ IRB = 0.0001406 
+ RBM = 0.4 
+ RE = 0.02 
+ RC = 0.057 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.952E-010 
+ VJE = 0.8026 
+ MJE = 0.3982 
+ TF = 1.1E-009 
+ XTF = 4 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.06E-010 
+ VJC = 0.4574 
+ MJC = 0.3251 
+ XCJC = 1 
+ TR = 1.3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 4.786E-014 
+ N = 1.103 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.213 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB709ARW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT 2PB709ARW 1 2 3
*
Q1 1 2 3 2PB709ARW
D1 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation.
*
.MODEL 2PB709ARW PNP
+ IS = 9.134E-15
+ NF = 0.9775
+ ISE = 5.035E-16
+ NE = 1.4
+ BF = 267.4
+ IKF = 0.095
+ VAF = 38
+ NR = 0.9848
+ ISC = 1.713E-15
+ NC = 1.034
+ BR = 17
+ IKR = 0.0075
+ VAR = 11.5
+ RB = 75
+ IRB = 0.0002144
+ RBM = 0.108
+ RE = 0.4
+ RC = 0.95
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.126E-11
+ VJE = 0.7922
+ MJE = 0.3954
+ TF = 4.5E-10
+ XTF = 1.5
+ VTF = 20
+ ITF = 0.07
+ PTF = 0
+ CJC = 1.031E-11
+ VJC = 1
+ MJC = 0.6227
+ XCJC = 1
+ TR = 5.1E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4.065E-18
+ N = 0.9309
+ BV = 1000
+ IBV = 0.001
+ RS = 0.02115
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PB709ASL
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 290 - 460 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT 2PB709ASL 1 2 3
*
Q1 1 2 3 2PB709ASL
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PB709ASL PNP 
+ IS = 1.812E-014 
+ NF = 0.9864 
+ ISE = 8.648E-015 
+ NE = 1.547 
+ BF = 310 
+ IKF = 0.05 
+ VAF = 15 
+ NR = 0.985 
+ ISC = 5.561E-015 
+ NC = 1.119 
+ BR = 14.64 
+ IKR = 0.019 
+ VAR = 15 
+ RB = 67 
+ IRB = 0.0003 
+ RBM = 6 
+ RE = 0.57 
+ RC = 0.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.102E-011 
+ VJE = 0.795 
+ MJE = 0.4095 
+ TF = 8.5E-010 
+ XTF = 15 
+ VTF = 15 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 6.031E-012 
+ VJC = 0.65 
+ MJC = 0.545 
+ XCJC = 1 
+ TR = 2.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 4.786 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 205.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB709ASW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 290 - 460 @ 10V/2mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PB709ASW PNP 
+ IS = 1.489E-14 
+ NF = 0.9902 
+ ISE = 2.952E-15 
+ NE = 1.381 
+ BF = 270 
+ IKF = 0.055 
+ VAF = 50 
+ NR = 0.99 
+ ISC = 8.349E-15 
+ NC = 1.126 
+ BR = 7.5 
+ IKR = 0.023 
+ VAR = 20 
+ RB = 237 
+ IRB = 5E-05 
+ RBM = 1 
+ RE = 0.4 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.205E-11 
+ VJE = 0.7414 
+ MJE = 0.3803 
+ TF = 5.1E-10 
+ XTF = 5 
+ VTF = 5 
+ ITF = 0.14 
+ PTF = 0 
+ CJC = 6.263E-12 
+ VJC = 0.5872 
+ MJC = 0.3726 
+ XCJC = 1 
+ TR = 1.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* 2PB709BRL
*
* NXP Semiconductors
*
* PNP transistor
* Ic   = 200 mA
* Vceo = 50  V 
* hFE  = 210-340 @ 10 V/2 mA (typical)
* 
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 40/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT 2PB709BRL 1 2 3
*
Q1 1 2 3 2PB709BRL
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL 2PB709BRL PNP 
+ IS = 1.812E-014 
+ NF = 0.9965 
+ ISE = 1.531E-015 
+ NE = 1.371 
+ BF = 243.3 
+ IKF = 0.055 
+ VAF = 15 
+ NR = 0.995 
+ ISC = 5.561E-015 
+ NC = 1.119 
+ BR = 11.27 
+ IKR = 0.019 
+ VAR = 15 
+ RB = 67 
+ IRB = 0.0003 
+ RBM = 6 
+ RE = 0.5449 
+ RC = 0.53 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.102E-011 
+ VJE = 0.795 
+ MJE = 0.4 
+ TF = 8.2E-010 
+ XTF = 17 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 6.031E-012 
+ VJC = 0.65 
+ MJC = 0.545 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 4.786 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 205.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB709BSL
*
* NXP Semiconductors
*
* PNP transistor
* Ic   = 200 mA
* Vceo = 50  V 
* hFE  = 290-460 @ 10 V/2 mA (typical)
* 
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 40/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT 2PB709BSL 1 2 3
*
Q1 1 2 3 2PB709BSL
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL 2PB709BSL PNP 
+ IS = 1.812E-014 
+ NF = 0.9864 
+ ISE = 8.648E-015 
+ NE = 1.547 
+ BF = 310 
+ IKF = 0.05 
+ VAF = 15 
+ NR = 0.985 
+ ISC = 5.561E-015 
+ NC = 1.119 
+ BR = 14.64 
+ IKR = 0.019 
+ VAR = 15 
+ RB = 67 
+ IRB = 0.0003 
+ RBM = 6 
+ RE = 0.57 
+ RC = 0.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.102E-011 
+ VJE = 0.795 
+ MJE = 0.4095 
+ TF = 8.5E-010 
+ XTF = 15 
+ VTF = 15 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 6.031E-012 
+ VJC = 0.65 
+ MJC = 0.545 
+ XCJC = 1 
+ TR = 2.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 4.786 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 205.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PB710ARL
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 120 - 240 @ 10V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3      
*
**********************************************************
*#
.MODEL Q2PB710ARL PNP 
+ IS = 6.637E-014 
+ NF = 0.9909 
+ ISE = 3.699E-015 
+ NE = 1.352 
+ BF = 191 
+ IKF = 0.1868 
+ VAF = 3.066 
+ NR = 0.992 
+ ISC = 2.511E-014 
+ NC = 1.152 
+ BR = 16 
+ IKR = 0.8297 
+ VAR = 20 
+ RB = 11 
+ IRB = 0.00015 
+ RBM = 1.6 
+ RE = 0.145 
+ RC = 0.09035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.039E-011 
+ VJE = 0.7603 
+ MJE = 0.3903 
+ TF = 1.167E-009 
+ XTF = 25 
+ VTF = 2 
+ ITF = 2.81 
+ PTF = 0 
+ CJC = 2.653E-011 
+ VJC = 0.1704 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 1.4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9259 
.ENDS
**
**********************************************************
*
* 2PB710ASL
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 170 - 340 @ 10V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008  
* Simulator: Spice 3      
*
**********************************************************
*#
.MODEL Q2PB710ASL PNP 
+ IS = 6.637E-014 
+ NF = 0.9909 
+ ISE = 1.488E-014 
+ NE = 1.368 
+ BF = 257.2 
+ IKF = 0.1293 
+ VAF = 4.982 
+ NR = 0.9937 
+ ISC = 2.511E-014 
+ NC = 1.152 
+ BR = 16 
+ IKR = 0.2455 
+ VAR = 20 
+ RB = 11 
+ IRB = 0.00015 
+ RBM = 1.6 
+ RE = 0.145 
+ RC = 0.06785 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.039E-011 
+ VJE = 0.7603 
+ MJE = 0.3903 
+ TF = 1.167E-009 
+ XTF = 25 
+ VTF = 2 
+ ITF = 2.81 
+ PTF = 0 
+ CJC = 2.653E-011 
+ VJC = 0.1704 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 1.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9259 
.ENDS
**
**********************************************************
*
* 2PC4081Q
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 270 @ 6V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4081Q NPN
+     IS=1.533E-14
+     NF=1.002
+     ISE=7.932E-16
+     NE=1.436
+     BF=178.7  
+     IKF=0.1216
+     VAF=69.7
+     NR=1.004
+     ISC=8.305E-14
+     NC=1.207  
+     BR=8.628
+     IKR=0.1121
+     VAR=44.7
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.361
+     RC=1.382
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.457E-11  
+     VJE=0.65
+     MJE=0.3393
+     TF=5.275E-10
+     XTF=96.78
+     VTF=2.012  
+     ITF=0.4793
+     PTF=0
+     CJC=3.511E-12
+     VJC=0.4485
+     MJC=0.3646  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9256
.ENDS
**
**********************************************************
*
* 2PC4081R
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4081R NPN 
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
**
**********************************************************
*
* 2PC4081S
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 270 - 560 @ 6V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4081S NPN 
+     IS=2.409E-14
+     NF=0.997
+     ISE=9.842E-16
+     NE=1.464
+     BF=351.8  
+     IKF=0.1371
+     VAF=52.64
+     NR=1.004
+     ISC=7.455E-14
+     NC=1.237  
+     BR=9.646
+     IKR=0.1144
+     VAR=364.5
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.3666
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.233E-11  
+     VJE=0.707
+     MJE=0.3698
+     TF=4.689E-10
+     XTF=100
+     VTF=2.586  
+     ITF=0.5651
+     PTF=0
+     CJC=3.847E-12
+     VJC=0.35
+     MJC=0.3739  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8945 
.ENDS
**
**********************************************************
*
* 2PC4617QM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 120 - 270 @ 6V/1mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4617QM NPN 
+     IS=1.533E-14
+     NF=1.002
+     ISE=7.932E-16
+     NE=1.436
+     BF=178.7  
+     IKF=0.1216
+     VAF=69.7
+     NR=1.004
+     ISC=8.305E-14
+     NC=1.207  
+     BR=8.628
+     IKR=0.1121
+     VAR=44.7
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.361
+     RC=1.382
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.457E-11  
+     VJE=0.65
+     MJE=0.3393
+     TF=5.275E-10
+     XTF=96.78
+     VTF=2.012  
+     ITF=0.4793
+     PTF=0
+     CJC=3.511E-12
+     VJC=0.4485
+     MJC=0.3646  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9256 
.ENDS
**
**********************************************************
*
* 2PC4617Q
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 270 @ 6V/1mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4617Q NPN 
+     IS=1.533E-14
+     NF=1.002
+     ISE=7.932E-16
+     NE=1.436
+     BF=178.7  
+     IKF=0.1216
+     VAF=69.7
+     NR=1.004
+     ISC=8.305E-14
+     NC=1.207  
+     BR=8.628
+     IKR=0.1121
+     VAR=44.7
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.361
+     RC=1.382
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.457E-11  
+     VJE=0.65
+     MJE=0.3393
+     TF=5.275E-10
+     XTF=96.78
+     VTF=2.012  
+     ITF=0.4793
+     PTF=0
+     CJC=3.511E-12
+     VJC=0.4485
+     MJC=0.3646  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9256 
.ENDS
**
**********************************************************
*
* 2PC4617RM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4617RM NPN 
+     IS=1.533E-14
+     NF=1.002
+     ISE=7.932E-16
+     NE=1.436
+     BF=178.7  
+     IKF=0.1216
+     VAF=69.7
+     NR=1.004
+     ISC=8.305E-14
+     NC=1.207  
+     BR=8.628
+     IKR=0.1121
+     VAR=44.7
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.361
+     RC=1.382
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.457E-11  
+     VJE=0.65
+     MJE=0.3393
+     TF=5.275E-10
+     XTF=96.78
+     VTF=2.012  
+     ITF=0.4793
+     PTF=0
+     CJC=3.511E-12
+     VJC=0.4485
+     MJC=0.3646  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9256 
.ENDS
**
**********************************************************
*
* 2PC4617R
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 180 - 390 @ 6V/1mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL Q2PC4617R NPN 
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361
.ENDS
**
**********************************************************
*
* 2PD1820AR
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 120 - 240 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2      
*
**********************************************************
*#
.SUBCKT 2PD1820AR 1 2 3
*
Q1 1 2 3 2PD1820AR
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD1820AR NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PD1820AS
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 170 - 340 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 2      
*
**********************************************************
*#
.SUBCKT 2PD1820AS 1 2 3
*
Q1 1 2 3 2PD1820AS
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD1820AS NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PD2150
*
* NXP Semiconductors
*
* Low-VCEsat-transistor NPN
* IC   = 3 A
* VCEO = 20 V 
* hFE  = 180 - 390 @ 2V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 46/2007  
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD2150 1 2 3
*
Q1 1 2 3 2PD2150
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD2150 NPN 
+ IS = 3.416E-013 
+ NF = 0.9842 
+ ISE = 7.375E-016 
+ NE = 1.245 
+ BF = 330 
+ IKF = 5.8 
+ VAF = 50 
+ NR = 0.9846 
+ ISC = 1.469E-014 
+ NC = 3 
+ BR = 174.6 
+ IKR = 4.5 
+ VAR = 17 
+ RB = 11.5 
+ IRB = 0.001057 
+ RBM = 0.6635 
+ RE = 0.034 
+ RC = 0.04535 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.617E-010 
+ VJE = 0.7447 
+ MJE = 0.3562 
+ TF = 6.3E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 4 
+ PTF = 0 
+ CJC = 5.546E-011 
+ VJC = 0.0907 
+ MJC = 0.2116 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 9.908E-015 
+ N = 1.024 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 501.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD601ARL
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008  
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD601ARL 1 2 3
*
Q1 1 2 3 2PD601ARL
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601ARL NPN 
+ IS = 1.45E-014 
+ NF = 0.9921 
+ ISE = 1.465E-015 
+ NE = 1.384 
+ BF = 260 
+ IKF = 0.06839 
+ VAF = 29.79 
+ NR = 0.9937 
+ ISC = 6.681E-015 
+ NC = 1.085 
+ BR = 14.64 
+ IKR = 0.06762 
+ VAR = 20 
+ RB = 55 
+ IRB = 0.0003 
+ RBM = 5.5 
+ RE = 0.5 
+ RC = 0.4493 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.407E-011 
+ VJE = 0.738 
+ MJE = 0.363 
+ TF = 5.8E-010 
+ XTF = 30 
+ VTF = 3 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 4.129E-012 
+ VJC = 0.3795 
+ MJC = 0.3304 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 0.8617 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.198E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD601AR
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 346
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2     
*
**********************************************************
*#
.SUBCKT 2PD601AR 1 2 3
*
Q1 1 2 3 2PD601AR
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601AR NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
+ XTI = 2
.ENDS
**
**********************************************************
*
* 2PD601ART
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD601ART 1 2 3
*
Q1 1 2 3 2PD601ART
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601ART NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PD601ARW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 210 - 340 @ 10V/2mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD601ARW 1 2 3
*
Q1 1 2 3 2PD601ARW
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601ARW NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PD601ASL
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 290 - 460 @ 10V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD601ASL 1 2 3
*
Q1 1 2 3 2PD601ASL
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601ASL NPN 
+ IS = 2.32E-014 
+ NF = 0.9921 
+ ISE = 2.008E-015 
+ NE = 1.481 
+ BF = 310 
+ IKF = 0.05269 
+ VAF = 29.79 
+ NR = 0.9948 
+ ISC = 6.681E-015 
+ NC = 1.085 
+ BR = 14.64 
+ IKR = 0.035 
+ VAR = 20 
+ RB = 55 
+ IRB = 0.0003 
+ RBM = 5.5 
+ RE = 0.4406 
+ RC = 0.592 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.416E-011 
+ VJE = 0.738 
+ MJE = 0.363 
+ TF = 5.8E-010 
+ XTF = 30 
+ VTF = 3 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 3.796E-012 
+ VJC = 0.5493 
+ MJC = 0.4394 
+ XCJC = 1 
+ TR = 3.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 0.8617 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.198E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD601ASW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 290 - 460 @ 10V/2mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*  
*
* Simulator: Spice 2     
*
**********************************************************
*#
.SUBCKT 2PD601ASW 1 2 3
*
Q1 1 2 3 2PD601ASW
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD601ASW NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* 2PD601BRL
*
* NXP Semiconductors
*
* NPN transistor
* Ic   = 200 mA
* Vceo = 50  V 
* hFE  = 210-340 @ 10 V/2 mA (typical)
*
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 40/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT 2PD601BRL 1 2 3
*
Q1 1 2 3 2PD601BRL
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL 2PD601BRL NPN 
+ IS = 1.45E-014 
+ NF = 0.9921 
+ ISE = 1.465E-015 
+ NE = 1.384 
+ BF = 260 
+ IKF = 0.06839 
+ VAF = 29.79 
+ NR = 0.9937 
+ ISC = 6.681E-015 
+ NC = 1.085 
+ BR = 14.64 
+ IKR = 0.06762 
+ VAR = 20 
+ RB = 55 
+ IRB = 0.0003 
+ RBM = 5.5 
+ RE = 0.5 
+ RC = 0.4493 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.407E-011 
+ VJE = 0.738 
+ MJE = 0.363 
+ TF = 5.8E-010 
+ XTF = 30 
+ VTF = 3 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 4.129E-012 
+ VJC = 0.3795 
+ MJC = 0.3304 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 0.8617 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.198E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD601BSL
*
* NXP Semiconductors
*
* NPN transistor
* Ic   = 200 mA
* Vceo = 50  V 
* hFE  = 290-460 @ 10 V/2 mA (typical)
* 
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 40/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT 2PD601BSL 1 2 3
*
Q1 1 2 3 2PD601BSL
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL 2PD601BSL NPN 
+ IS = 2.32E-014 
+ NF = 0.9921 
+ ISE = 2.008E-015 
+ NE = 1.481 
+ BF = 310 
+ IKF = 0.05269 
+ VAF = 29.79 
+ NR = 0.9948 
+ ISC = 6.681E-015 
+ NC = 1.085 
+ BR = 14.64 
+ IKR = 0.035 
+ VAR = 20 
+ RB = 55 
+ IRB = 0.0003 
+ RBM = 5.5 
+ RE = 0.4406 
+ RC = 0.592 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.416E-011 
+ VJE = 0.738 
+ MJE = 0.363 
+ TF = 5.8E-010 
+ XTF = 30 
+ VTF = 3 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 3.796E-012 
+ VJC = 0.5493 
+ MJC = 0.4394 
+ XCJC = 1 
+ TR = 3.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 4.455E-017 
+ N = 0.8617 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.198E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD602AQL
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 85 - 170 @ 10V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD602AQL 1 2 3
*
Q1 1 2 3 2PD602AQL
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD602AQL NPN 
+ IS = 2.22E-014 
+ NF = 0.9817 
+ ISE = 8.235E-015 
+ NE = 1.605 
+ BF = 154.2 
+ IKF = 0.1975 
+ VAF = 10.67 
+ NR = 0.9812 
+ ISC = 7.241E-015 
+ NC = 1.049 
+ BR = 23.43 
+ IKR = 0.1529 
+ VAR = 25.5 
+ RB = 27.35 
+ IRB = 0.0002598 
+ RBM = 1.428 
+ RE = 0.1749 
+ RC = 0.1546 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 4.23E-011 
+ VJE = 0.7337 
+ MJE = 0.3584 
+ TF = 6.2E-010 
+ XTF = 25 
+ VTF = 5 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 1.268E-011 
+ VJC = 0.6368 
+ MJC = 0.4354 
+ XCJC = 1 
+ TR = 3.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7827 
.MODEL DIODE D 
+ IS = 1.152E-017 
+ N = 0.7867 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4.171E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD602ARL
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 120 - 240 @ 10V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD602ARL 1 2 3
*    
Q1 1 2 3 2PD602ARL
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD602ARL NPN 
+ IS = 2.22E-014 
+ NF = 0.9817 
+ ISE = 8.235E-015 
+ NE = 1.605 
+ BF = 154.2 
+ IKF = 0.1975 
+ VAF = 10.67 
+ NR = 0.9812 
+ ISC = 7.241E-015 
+ NC = 1.049 
+ BR = 23.43 
+ IKR = 0.1529 
+ VAR = 25.5 
+ RB = 27.35 
+ IRB = 0.0002598 
+ RBM = 1.428 
+ RE = 0.1749 
+ RC = 0.1546 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 4.23E-011 
+ VJE = 0.7337 
+ MJE = 0.3584 
+ TF = 6.2E-010 
+ XTF = 25 
+ VTF = 5 
+ ITF = 1.8 
+ PTF = 0 
+ CJC = 1.268E-011 
+ VJC = 0.6368 
+ MJC = 0.4354 
+ XCJC = 1 
+ TR = 3.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7827 
.MODEL DIODE D 
+ IS = 1.152E-017 
+ N = 0.7867 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4.171E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* 2PD602ASL
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = 170 - 340 @ 10V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 41/2008 
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT 2PD602ASL 1 2 3
*
Q1 1 2 3 2PD602ASL
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL 2PD602ASL NPN 
+ IS = 5.97E-014 
+ NF = 0.9862 
+ ISE = 1.272E-015 
+ NE = 1.265 
+ BF = 302 
+ IKF = 0.1028 
+ VAF = 10.37 
+ NR = 0.9865 
+ ISC = 7.241E-015 
+ NC = 1.049 
+ BR = 23.43 
+ IKR = 0.1113 
+ VAR = 25.5 
+ RB = 27.35 
+ IRB = 0.0002598 
+ RBM = 1.428 
+ RE = 0.1632 
+ RC = 0.1308 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 4.23E-011 
+ VJE = 0.7337 
+ MJE = 0.3584 
+ TF = 6.2E-010 
+ XTF = 15 
+ VTF = 3 
+ ITF = 2.5 
+ PTF = 0 
+ CJC = 1.268E-011 
+ VJC = 0.6368 
+ MJC = 0.4354 
+ XCJC = 1 
+ TR = 2.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 1.152E-017 
+ N = 0.7867 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4.171E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC327-25
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3     
*
**********************************************************
*#
.MODEL QBC327-25 PNP
+ IS=1.08E-13
+ NF=0.99
+ ISE=2.713E-14
+ NE=1.4
+ BF=385.7
+ IKF=0.3603
+ VAF=31.29
+ NR=0.9849
+ ISC=5.062E-13
+ NC=1.295
+ BR=20.57
+ IKR=0.054
+ VAR=11.62
+ RB=1
+ IRB=1E-06
+ RBM=0.5
+ RE=0.1415
+ RC=0.2623
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=5.114E-11
+ VJE=0.8911
+ MJE=0.4417
+ TF=7.359E-10
+ XTF=1.859
+ VTF=3.813
+ ITF=0.4393
+ PTF=0
+ CJC=2.656E-11
+ VJC=0.62
+ MJC=0.4836
+ XCJC=0.459
+ TR=5.00E-08
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.99
.ENDS
**
**********************************************************
*
* BC327-40
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3     
*
**********************************************************
*#
.MODEL QBC327-40 PNP
+ IS = 2.077E-13 
+ NF = 1.005 
+ ISE = 1.411E-14 
+ NE = 1.3 
+ BF = 449.8 
+ IKF = 0.36 
+ VAF = 29 
+ NR = 1.002 
+ ISC = 2.963E-13 
+ NC = 1.25 
+ BR = 20.92 
+ IKR = 0.104 
+ VAR = 10 
+ RB = 40 
+ IRB = 1E-05 
+ RBM = 5.3 
+ RE = 0.14 
+ RC = 0.32 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5E-11 
+ VJE = 0.9296 
+ MJE = 0.456 
+ TF = 7E-10 
+ XTF = 3.25 
+ VTF = 2.5 
+ ITF = 0.79 
+ PTF = 80 
+ CJC = 2.675E-11 
+ VJC = 0.8956 
+ MJC = 0.4638 
+ XCJC =  0.459 
+ TR = 3.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.935
.ENDS
**
**********************************************************
*
* BC327
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3     
*
**********************************************************
*#
.MODEL QBC327 PNP
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BC337-16
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 250 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC337-16 NPN
+    IS = 4.887E-14 
+    NF = 1.002 
+    ISE = 2.552E-15 
+    NE = 1.65 
+    BF = 207.2 
+    IKF = 0.902 
+    VAF = 184.8 
+    NR = 1.002 
+    ISC = 7.006E-14 
+    NC = 1.25 
+    BR = 21.85 
+    IKR = 0.1 
+    VAR = 20 
+    RB = 50 
+    IRB = 0.0002 
+    RBM = 2 
+    RE = 0.119 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.217E-11 
+    VJE = 0.6596 
+    MJE = 0.3434 
+    TF = 6E-10 
+    XTF = 2.1 
+    VTF = 2.4 
+    ITF = 0.79 
+    PTF = 86 
+    CJC = 1.734E-11 
+    VJC = 0.1419 
+    MJC = 0.3484 
+    XCJC = 0.455 
+    TR = 3.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.652
.ENDS
**
**********************************************************
*
* BC337-25
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC337-25 NPN 
+    IS = 4.13E-14 
+    NF = 0.9822 
+    ISE = 3.534E-15 
+    NE = 1.35 
+    BF = 292.4 
+    IKF = 0.9 
+    VAF = 145.7 
+    NR = 0.982 
+    ISC = 1.957E-13 
+    NC = 1.3 
+    BR = 23.68 
+    IKR = 0.1 
+    VAR = 20 
+    RB = 60 
+    IRB = 0.0002 
+    RBM = 8 
+    RE = 0.1129 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.799E-11 
+    VJE = 0.6752 
+    MJE = 0.3488 
+    TF = 5.4E-10 
+    XTF = 4 
+    VTF = 4.448 
+    ITF = 0.665 
+    PTF = 90 
+    CJC = 1.355E-11 
+    VJC = 0.3523 
+    MJC = 0.3831 
+    XCJC = 0.455 
+    TR = 3E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.643
.ENDS
**
**********************************************************
*
* BC337-40
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC337-40 NPN 
+    IS = 7.809E-14 
+    NF = 0.9916 
+    ISE = 2.069E-15 
+    NE = 1.4 
+    BF = 436.8 
+    IKF = 0.8 
+    VAF = 103.6 
+    NR = 0.991 
+    ISC = 6.66E-14 
+    NC = 1.2 
+    BR = 44.14 
+    IKR = 0.09 
+    VAR = 14 
+    RB = 70 
+    IRB = 0.0002 
+    RBM = 8 
+    RE = 0.12 
+    RC = 0.24 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.579E-11 
+    VJE = 0.6657 
+    MJE = 0.3596 
+    TF = 5E-10 
+    XTF = 2.5 
+    VTF = 2 
+    ITF = 0.5 
+    PTF = 88 
+    CJC = 1.306E-11 
+    VJC = 0.3647 
+    MJC = 0.3658 
+    XCJC = 0.455 
+    TR = 2.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.843
.ENDS
**
**********************************************************
*
* BC337
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBC337 NPN
+ IS=1.08E-13
+ NF=0.99
+ ISE=2.713E-14
+ NE=1.4
+ BF=385.7
+ IKF=0.3603
+ VAF=31.29
+ NR=0.9849
+ ISC=5.062E-13
+ NC=1.295
+ BR=20.57
+ IKR=0.054
+ VAR=11.62
+ RB=1
+ IRB=1E-06
+ RBM=0.5
+ RE=0.1415
+ RC=0.2623
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=5.114E-11
+ VJE=0.8911
+ MJE=0.4417
+ TF=7.359E-10
+ XTF=1.859
+ VTF=3.813
+ ITF=0.4393
+ PTF=0
+ CJC=2.656E-11
+ VJC=0.62
+ MJC=0.4836
+ XCJC=0.459
+ TR=5.00E-08
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.99
.ENDS
**
**********************************************************
*
* BC368
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 mA
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC368 NPN
+     IS=2.474E-13
+     NF=0.9998
+     ISE=4.403E-14
+     NE=1.400
+     BF=196.2
+     IKF=4.8360
+     VAF=127.5
+     NR=0.9995
+     ISC=2.009E-13
+     NC=1.500
+     BR=30.57
+     IKR=0.3264
+     VAR=17.26
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.1021
+     RC=9.070E-02
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.2260E-10
+     VJE=0.8011
+     MJE=0.3833
+     TF=6.469E-10
+     XTF=1.257
+     VTF=1.735
+     ITF=0.3542
+     PTF=0
+     CJC=8.735E-11
+     VJC=0.5995
+     MJC=0.4009
+     XCJC=0.500
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.6153 
.ENDS
**
**********************************************************
*
* BC369
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 mA
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC369 PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309 
.ENDS
**
**********************************************************
*
* BC51-10PA 
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC51-10PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC51-16PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC51-16PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BC51PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC51PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC52-10PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC52-10PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC52-16PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC52-16PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC52PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC52PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC53-10PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC53-10PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC53-16PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC53-16PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC53PA
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC53PA PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BC54-10PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC54-10PA 1 2 3
*
Q1 1 2 3 BC54-10PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC54-10PA NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC54-16PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC54-16PA 1 2 3
*
Q1 1 2 3 BC54-16PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC54-16PA NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC546A
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 220 @ 5V/2mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC546A NPN
+     IS=1.533E-14
+     NF=1.002
+     ISE=7.932E-16
+     NE=1.436
+     BF=178.7
+     IKF=0.1216
+     VAF=69.7
+     NR=1.004
+     ISC=8.305E-14
+     NC=1.207
+     BR=8.628
+     IKR=0.1121
+     VAR=44.7
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.6395
+     RC=0.6508
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.61E-11
+     VJE=0.4209
+     MJE=0.3071
+     TF=4.995E-10
+     XTF=139
+     VTF=3.523
+     ITF=0.7021
+     PTF=0
+     CJC=4.388E-12
+     VJC=0.2
+     MJC=0.2793
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.7762 
.ENDS
**
**********************************************************
*
* BC546B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 200 - 450 @ 5V/2mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC546B NPN
+     IS=2.39E-14
+     NF=1.008
+     ISE=3.545E-15
+     NE=1.541
+     BF=294.3
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243
+     BR=7.946
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.4683
+     RC=0.85
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.358E-11
+     VJE=0.65
+     MJE=0.3279
+     TF=4.391E-10
+     XTF=120
+     VTF=2.643
+     ITF=0.7495
+     PTF=0
+     CJC=3.728E-12
+     VJC=0.3997
+     MJC=0.2955
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9579 
.ENDS
**
**********************************************************
*
* BC547B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
* 
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC547B NPN
+     IS=2.39E-14
+     NF=1.008
+     ISE=3.545E-15
+     NE=1.541
+     BF=294.3
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243
+     BR=7.946
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.4683
+     RC=0.85
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.358E-11
+     VJE=0.65
+     MJE=0.3279
+     TF=4.391E-10
+     XTF=120
+     VTF=2.643
+     ITF=0.7495
+     PTF=0
+     CJC=3.728E-12
+     VJC=0.3997
+     MJC=0.2955
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9579
.ENDS
**
**********************************************************
*
* BC547C
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC547C NPN
+     IS=4.679E-14
+     NF=1.01
+     ISE=2.642E-15
+     NE=1.581
+     BF=458.7
+     IKF=0.1371
+     VAF=52.64
+     NR=1.019
+     ISC=2.337E-14
+     NC=1.164
+     BR=11.57
+     IKR=0.1144
+     VAR=364.5
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.2598
+     RC=1
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.229E-11
+     VJE=0.5591
+     MJE=0.3385
+     TF=4.689E-10
+     XTF=160
+     VTF=2.828
+     ITF=0.8842
+     PTF=0
+     CJC=4.42E-12
+     VJC=0.1994
+     MJC=0.2782
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.7936
.ENDS
**
**********************************************************
*
* BC54PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC54PA 1 2 3
*
Q1 1 2 3 BC54PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC54PA NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC55-10PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC55-10PA 1 2 3
*
Q1 1 2 3 BC55-10PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC55-10PA NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC55-16PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC55-16PA 1 2 3
*
Q1 1 2 3 BC55-16PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC55-16PA NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC556A
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC556A PNP
+     IS=2.059E-14
+     NF=1.003
+     ISE=2.971E-15
+     NE=1.316
+     BF=227.3
+     IKF=0.08719
+     VAF=37.2
+     NR=1.007
+     ISC=1.339E-14
+     NC=1.15
+     BR=7.69
+     IKR=0.07646
+     VAR=11.42
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.688
+     RC=0.6437
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.4E-11
+     VJE=0.5912
+     MJE=0.3572
+     TF=7.046E-10
+     XTF=4.217
+     VTF=5.367
+     ITF=0.1947
+     PTF=0
+     CJC=1.113E-11
+     VJC=0.1
+     MJC=0.3414
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.7947
.ENDS
**
**********************************************************
*
* BC556B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC556B PNP 
+     IS=3.834E-14
+     NF=1.008
+     ISE=1.219E-14
+     NE=1.528
+     BF=344.4
+     IKF=0.08039
+     VAF=21.11
+     NR=1.005
+     ISC=2.852E-13
+     NC=1.28
+     BR=14.84
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.6202
+     RC=0.5713
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.23E-11
+     VJE=0.6106
+     MJE=0.378
+     TF=5.595E-10
+     XTF=3.414
+     VTF=5.23
+     ITF=0.1483
+     PTF=0
+     CJC=1.084E-11
+     VJC=0.1022
+     MJC=0.3563
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8027 
.ENDS
**
**********************************************************
*
* BC557B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC557B PNP
+     IS=3.834E-14
+     NF=1.008
+     ISE=1.219E-14
+     NE=1.528
+     BF=344.4
+     IKF=0.08039
+     VAF=21.11
+     NR=1.005
+     ISC=2.852E-13
+     NC=1.28
+     BR=14.84
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.6202
+     RC=0.5713
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.23E-11
+     VJE=0.6106
+     MJE=0.378
+     TF=5.595E-10
+     XTF=3.414
+     VTF=5.23
+     ITF=0.1483
+     PTF=0
+     CJC=1.084E-11
+     VJC=0.1022
+     MJC=0.3563
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8027
.ENDS
**
**********************************************************
*
* BC557C
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC557C PNP
+     IS=5.826E-14
+     NF=1.009
+     ISE=3.884E-15
+     NE=1.408
+     BF=516.7
+     IKF=0.08039
+     VAF=26.03
+     NR=1.006
+     ISC=4.014E-14
+     NC=1.313
+     BR=12.45
+     IKR=0.07238
+     VAR=6.717
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.5685
+     RC=0.6257
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.26E-11
+     VJE=0.3809
+     MJE=0.3545
+     TF=5.233E-10
+     XTF=4.339
+     VTF=5.425
+     ITF=0.1896
+     PTF=0
+     CJC=7.798E-12
+     VJC=0.5897
+     MJC=0.4569
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5729 
.ENDS
**
**********************************************************
*
* BC55PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC55PA 1 2 3
*
Q1 1 2 3 BC55PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC55PA NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC56-10PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC56-10PA 1 2 3
*
Q1 1 2 3 BC56-10PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC56-10PA NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC56-16PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC56-16PA 1 2 3
*
Q1 1 2 3 BC56-16PA
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BC56-16PA NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC56PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QBC56PA NPN 
+ IS = 6.8405E-014 
+ NF = 0.9951 
+ ISE = 5.801E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9851 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* BC68-25PA
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
* 
* Extraction date (week/year): 13/2008 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC68-25PA 1 2 3
* 
Q1 1 2 3 BC68-25PA
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL BC68-25PA NPN 
+ IS = 2.312E-013 
+ NF = 0.988 
+ ISE = 8.851E-014 
+ NE = 2.191 
+ BF = 273 
+ IKF = 5.5 
+ VAF = 50 
+ NR = 0.9885 
+ ISC = 6.808E-014 
+ NC = 3 
+ BR = 155.6 
+ IKR = 4 
+ VAR = 17 
+ RB = 15 
+ IRB = 2E-006 
+ RBM = 0.65 
+ RE = 0.073 
+ RC = 0.073 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.678E-010 
+ VJE = 0.732 
+ MJE = 0.3484 
+ TF = 5.8E-010 
+ XTF = 1.5 
+ VTF = 2.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 3.406E-011 
+ VJC = 2 
+ MJC = 0.3142 
+ XCJC = 1 
+ TR = 6.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 2.702E-015 
+ N = 1.2 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC68PA
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC68PA NPN
+     IS=2.474E-13
+     NF=0.9998
+     ISE=4.403E-14
+     NE=1.4
+     BF=196.2
+     IKF=4.836
+     VAF=127.5
+     NR=0.9995
+     ISC=2.009E-13
+     NC=1.5
+     BR=30.57
+     IKR=0.3264
+     VAR=17.26
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.1021
+     RC=0.0252
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.226E-10
+     VJE=0.8011
+     MJE=0.3833
+     TF=6.469E-10
+     XTF=1.257
+     VTF=1.735
+     ITF=0.3542
+     PTF=0
+     CJC=8.735E-11
+     VJC=0.5995
+     MJC=0.4009
+     XCJC=0.5
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.6153
.ENDS
**
**********************************************************
*
* BC69-16PA
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 100 - 250 @ 1V/500mA
* 
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC69-16PA PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309
.ENDS
**
**********************************************************
*
* BC69-25PA
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 160 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QBC69-25PA PNP
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309 
.ENDS
**
**********************************************************
*
* BC69PA
*
* NXP Semiconductors
*
* PNP medium power PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC69PA PNP
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309 
.ENDS
**
**********************************************************
*
* BC807_16
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 250 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* Extraction date (week/year): 09/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT BC807-16 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC807_16 0.9238 
Q2 11 2 3 BC807_16 0.07621
RQ 11 1 30.39 
D1 1 2 DIODE
*
.MODEL BC807_16 PNP 
+ IS = 4.676E-014 
+ NF = 0.9813 
+ ISE = 7.921E-015 
+ NE = 1.335 
+ BF = 185.2 
+ IKF = 0.5928 
+ VAF = 30.79 
+ NR = 0.9811 
+ ISC = 2.73E-014 
+ NC = 1.133 
+ BR = 26.63 
+ IKR = 0.9621 
+ VAR = 25 
+ RB = 18 
+ IRB = 0.00116 
+ RBM = 0.8 
+ RE = 0.14 
+ RC = 0.1059 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.28E-011 
+ VJE = 0.77 
+ MJE = 0.38 
+ TF = 1.08E-009 
+ XTF = 1.859 
+ VTF = 3.813 
+ ITF = 0.4393 
+ PTF = 0 
+ CJC = 2E-011 
+ VJC = 0.45 
+ MJC = 0.3768 
+ XCJC = 0.459 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 6.812E-016 
+ N = 0.9524 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 5099 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC807_16W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 250 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* Extraction date (week/year): 09/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT BC807-16W 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3  BC807_16W 0.9238 
Q2 11 2 3  BC807_16W 0.07621 
RQ 11 1 30.39 
D1 1 2 DIODE
*
.MODEL BC807_16W PNP 
+ IS = 4.676E-014 
+ NF = 0.9813 
+ ISE = 7.921E-015 
+ NE = 1.335 
+ BF = 185.2 
+ IKF = 0.5928 
+ VAF = 30.79 
+ NR = 0.9811 
+ ISC = 2.73E-014 
+ NC = 1.133 
+ BR = 26.63 
+ IKR = 0.9621 
+ VAR = 25 
+ RB = 18 
+ IRB = 0.00116 
+ RBM = 0.8 
+ RE = 0.14 
+ RC = 0.1059 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.28E-011 
+ VJE = 0.77 
+ MJE = 0.38 
+ TF = 1.08E-009 
+ XTF = 1.859 
+ VTF = 3.813 
+ ITF = 0.4393 
+ PTF = 0 
+ CJC = 2E-011 
+ VJC = 0.45 
+ MJC = 0.3768 
+ XCJC = 0.459 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 6.812E-016 
+ N = 0.9524 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 5099 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC807-25
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807-25 PNP
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BC807-25W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807-25W PNP
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BC807-40
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807-40 PNP
+     IS = 2.077E-13 
+     NF = 1.005 
+     ISE = 1.411E-14 
+     NE = 1.3 
+     BF = 449.8 
+     IKF = 0.36 
+     VAF = 29 
+     NR = 1.002 
+     ISC = 2.963E-13 
+     NC = 1.25 
+     BR = 20.92 
+     IKR = 0.104 
+     VAR = 10 
+     RB = 40 
+     IRB = 1E-05 
+     RBM = 5.3 
+     RE = 0.14 
+     RC = 0.32 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 5E-11 
+     VJE = 0.9296 
+     MJE = 0.456 
+     TF = 7E-10 
+     XTF = 3.25 
+     VTF = 2.5 
+     ITF = 0.79 
+     PTF = 80 
+     CJC = 2.675E-11 
+     VJC = 0.8956 
+     MJC = 0.4638 
+     XCJC =  0.459 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.935
.ENDS
**
**********************************************************
*
* BC807-40W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807-40W PNP 
+     IS = 2.077E-13 
+     NF = 1.005 
+     ISE = 1.411E-14 
+     NE = 1.3 
+     BF = 449.8 
+     IKF = 0.36 
+     VAF = 29 
+     NR = 1.002 
+     ISC = 2.963E-13 
+     NC = 1.25 
+     BR = 20.92 
+     IKR = 0.104 
+     VAR = 10 
+     RB = 40 
+     IRB = 1E-05 
+     RBM = 5.3 
+     RE = 0.14 
+     RC = 0.32 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 5E-11 
+     VJE = 0.9296 
+     MJE = 0.456 
+     TF = 7E-10 
+     XTF = 3.25 
+     VTF = 2.5 
+     ITF = 0.79 
+     PTF = 80 
+     CJC = 2.675E-11 
+     VJC = 0.8956 
+     MJC = 0.4638 
+     XCJC =  0.459 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.935
.ENDS
**
**********************************************************
*
* BC807DS
*
* NXP Semiconductors
*
* General purpose PNP double transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
* 
* 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QBC807DS PNP
+ IS=1.08E-13
+ NF=0.99
+ ISE=2.713E-14
+ NE=1.4
+ BF=385.7
+ IKF=0.3603
+ VAF=31.29
+ NR=0.9849
+ ISC=5.062E-13
+ NC=1.295
+ BR=20.57
+ IKR=0.054
+ VAR=11.62
+ RB=1
+ IRB=1E-06
+ RBM=0.5
+ RE=0.1415
+ RC=0.2623
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=5.114E-11
+ VJE=0.8911
+ MJE=0.4417
+ TF=7.359E-10
+ XTF=1.859
+ VTF=3.813
+ ITF=0.4393
+ PTF=0
+ CJC=2.656E-11
+ VJC=0.62
+ MJC=0.4836
+ XCJC=0.459
+ TR=5.00E-08
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.99
.ENDS
**
**********************************************************
*
* BC807
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807 PNP 
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BC807W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC807W PNP 
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BC817-16
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 250 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817-16 NPN
+    IS = 3.615E-14
+    NF = 0.9932
+    ISE = 2.649E-15
+    NE = 1.65
+    BF = 223 
+    IKF = 0.5913
+    VAF = 157.9
+    NR = 0.992
+    ISC = 1.741E-14
+    NC = 1.119 
+    BR = 25.47
+    IKR = 0.235
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1
+    RE = 0.2246 
+    RC = 0.17
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 4.202E-11
+    VJE = 0.6357 
+    MJE = 0.344
+    TF = 5.869E-10
+    XTF = 220
+    VTF = 2.846
+    ITF = 6.136 
+    PTF = 0
+    CJC = 1.213E-11
+    VJC = 0.3293
+    MJC = 0.3658
+    XCJC = 0.455 
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.8528
.ENDS
**
**********************************************************
*
* BC817-16W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 250 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817-16W NPN 
+    IS = 3.615E-14
+    NF = 0.9932
+    ISE = 2.649E-15
+    NE = 1.65
+    BF = 223 
+    IKF = 0.5913
+    VAF = 157.9
+    NR = 0.992
+    ISC = 1.741E-14
+    NC = 1.119 
+    BR = 25.47
+    IKR = 0.235
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1
+    RE = 0.2246 
+    RC = 0.17
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 4.202E-11
+    VJE = 0.6357 
+    MJE = 0.344
+    TF = 5.869E-10
+    XTF = 220
+    VTF = 2.846
+    ITF = 6.136 
+    PTF = 0
+    CJC = 1.213E-11
+    VJC = 0.3293
+    MJC = 0.3658
+    XCJC = 0.455 
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.8528
.ENDS 
**
**********************************************************
*
* BC817-25
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*# 
.MODEL QBC817-25 NPN
+    IS = 9.198E-14
+    NF = 1.003
+    ISE = 4.468E-16
+    NE = 1.65
+    BF = 338.8 
+    IKF = 0.4913
+    VAF = 107.9
+    NR = 1.002
+    ISC = 5.109E-15
+    NC = 1.071 
+    BR = 29.48
+    IKR = 0.193
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2126
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.825E-11 
+    VJE = 0.7004
+    MJE = 0.364
+    TF = 5.229E-10
+    XTF = 219.7
+    VTF = 3.502 
+    ITF = 7.257
+    PTF = 0
+    CJC = 1.27E-11
+    VJC = 0.4431
+    MJC = 0.3983 
+    XCJC = 0.4555
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.905
.ENDS
**
**********************************************************
*
* BC817-25W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817-25W NPN
+    IS = 9.198E-14
+    NF = 1.003
+    ISE = 4.468E-16
+    NE = 1.65
+    BF = 338.8 
+    IKF = 0.4913
+    VAF = 107.9
+    NR = 1.002
+    ISC = 5.109E-15
+    NC = 1.071 
+    BR = 29.48
+    IKR = 0.193
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2126
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.825E-11 
+    VJE = 0.7004
+    MJE = 0.364
+    TF = 5.229E-10
+    XTF = 219.7
+    VTF = 3.502 
+    ITF = 7.257
+    PTF = 0
+    CJC = 1.27E-11
+    VJC = 0.4431
+    MJC = 0.3983 
+    XCJC = 0.4555
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.905
.ENDS 
**
**********************************************************
*
* BC817-40
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817-40 NPN
+    IS = 6.286E-14
+    NF = 0.9917
+    ISE = 4.53E-15
+    NE = 1.774
+    BF = 416.3 
+    IKF = 0.4913
+    VAF = 98.08
+    NR = 0.9895
+    ISC = 1.877E-13
+    NC = 1.3 
+    BR = 24.49
+    IKR = 0.203
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2256
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.568E-11 
+    VJE = 0.726
+    MJE = 0.3721
+    TF = 4.826E-10
+    XTF = 120
+    VTF = 3.654 
+    ITF = 5.104
+    PTF = 0
+    CJC = 1.296E-11
+    VJC = 0.3241
+    MJC = 0.3742 
+    XCJC = 0.455
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.8662
.ENDS
**
**********************************************************
*
* BC817-40W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 250 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817-40W NPN
+    IS = 6.286E-14
+    NF = 0.9917
+    ISE = 4.53E-15
+    NE = 1.774
+    BF = 416.3 
+    IKF = 0.4913
+    VAF = 98.08
+    NR = 0.9895
+    ISC = 1.877E-13
+    NC = 1.3 
+    BR = 24.49
+    IKR = 0.203
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2256
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.568E-11 
+    VJE = 0.726
+    MJE = 0.3721
+    TF = 4.826E-10
+    XTF = 120
+    VTF = 3.654 
+    ITF = 5.104
+    PTF = 0
+    CJC = 1.296E-11
+    VJC = 0.3241
+    MJC = 0.3742 
+    XCJC = 0.455
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.8662
.ENDS
**
**********************************************************
*
* BC817DPN
*
* NXP Semiconductors
*
* General purpose NPN/PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
*
* Extraction date (week/year): 36/2006
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL QBC817DPN_NPN NPN 
+ IS = 4.13E-14 
+ NF = 0.9822 
+ ISE = 3.534E-15 
+ NE = 1.35 
+ BF = 292.4 
+ IKF = 0.9 
+ VAF = 145.7 
+ NR = 0.982 
+ ISC = 1.957E-13 
+ NC = 1.3 
+ BR = 23.68 
+ IKR = 0.1 
+ VAR = 20 
+ RB = 60 
+ IRB = 0.0002 
+ RBM = 8 
+ RE = 0.1129 
+ RC = 0.25 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.799E-11 
+ VJE = 0.6752 
+ MJE = 0.3488 
+ TF = 5.4E-10 
+ XTF = 4 
+ VTF = 4.448 
+ ITF = 0.665 
+ PTF = 90 
+ CJC = 1.355E-11 
+ VJC = 0.3523 
+ MJC = 0.3831 
+ XCJC = 0.455 
+ TR = 3E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.643
.ENDS
*
.MODEL QBC817DPN_PNP PNP
+ IS=1.08E-13
+ NF=0.99
+ ISE=2.713E-14
+ NE=1.4
+ BF=385.7
+ IKF=0.3603
+ VAF=31.29
+ NR=0.9849
+ ISC=5.062E-13
+ NC=1.295
+ BR=20.57
+ IKR=0.054
+ VAR=11.62
+ RB=40
+ IRB=1E-06
+ RBM=5
+ RE=0.1415
+ RC=0.2623
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=5.114E-11
+ VJE=0.8911
+ MJE=0.4417
+ TF=7.359E-10
+ XTF=1.859
+ VTF=3.813
+ ITF=0.4393
+ PTF=0
+ CJC=2.656E-11
+ VJC=0.62
+ MJC=0.4836
+ XCJC=0.459
+ TR=5.00E-08
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.99
.ENDS
**
**********************************************************
*
* BC817DS
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 160 - 400 @ 1V/100mA
* 
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
*
* Extraction date (week/year): 36/2006
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL QBC817DS NPN 
+    IS = 4.13E-14 
+    NF = 0.9822 
+    ISE = 3.534E-15 
+    NE = 1.35 
+    BF = 292.4 
+    IKF = 0.9 
+    VAF = 145.7 
+    NR = 0.982 
+    ISC = 1.957E-13 
+    NC = 1.3 
+    BR = 23.68 
+    IKR = 0.1 
+    VAR = 20 
+    RB = 60 
+    IRB = 0.0002 
+    RBM = 8 
+    RE = 0.1129 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.799E-11 
+    VJE = 0.6752 
+    MJE = 0.3488 
+    TF = 5.4E-10 
+    XTF = 4 
+    VTF = 4.448 
+    ITF = 0.665 
+    PTF = 90 
+    CJC = 1.355E-11 
+    VJC = 0.3523 
+    MJC = 0.3831 
+    XCJC = 0.455 
+    TR = 3E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.643
.ENDS
**
**********************************************************
*
* BC817
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*# 
.MODEL QBC817 NPN
+    IS = 9.198E-14
+    NF = 1.003
+    ISE = 4.468E-16
+    NE = 1.65
+    BF = 338.8 
+    IKF = 0.4913
+    VAF = 107.9
+    NR = 1.002
+    ISC = 5.109E-15
+    NC = 1.071 
+    BR = 29.48
+    IKR = 0.193
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2126
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.825E-11 
+    VJE = 0.7004
+    MJE = 0.364
+    TF = 5.229E-10
+    XTF = 219.7
+    VTF = 3.502 
+    ITF = 7.257
+    PTF = 0
+    CJC = 1.27E-11
+    VJC = 0.4431
+    MJC = 0.3983 
+    XCJC = 0.4555
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.905
.ENDS 
**
**********************************************************
*
* BC817W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC817W NPN
+    IS = 9.198E-14
+    NF = 1.003
+    ISE = 4.468E-16
+    NE = 1.65
+    BF = 338.8 
+    IKF = 0.4913
+    VAF = 107.9
+    NR = 1.002
+    ISC = 5.109E-15
+    NC = 1.071 
+    BR = 29.48
+    IKR = 0.193
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2126
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.825E-11 
+    VJE = 0.7004
+    MJE = 0.364
+    TF = 5.229E-10
+    XTF = 219.7
+    VTF = 3.502 
+    ITF = 7.257
+    PTF = 0
+    CJC = 1.27E-11
+    VJC = 0.4431
+    MJC = 0.3983 
+    XCJC = 0.4555
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.905
.ENDS
**
**********************************************************
*
* BC846A
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846A NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789
.ENDS
**
**********************************************************
*
* BC846AT
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846AT NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789 
.ENDS
**
**********************************************************
*
* BC846AW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base   
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
* 
*
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846AW NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.789
.ENDS
**
**********************************************************
*
* BC846BPN
*
* NXP Semiconductors
*
* General purpose NPN/PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR1;TR2
* 
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT BC846BPN_NPN 1 2 3
*
Q1  1 2 3 BC846BPN_NPN 0.9289 
Q2  11 2 3 BC846BPN_NPN 0.07107
RQ1 11 1 324.8
D   2 1 DIODE  
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
.MODEL BC846BPN_NPN NPN 
+ IS = 7.908E-015 
+ NF = 0.9767 
+ ISE = 5.297E-016 
+ NE = 1.344 
+ BF = 288 
+ IKF = 0.07763 
+ VAF = 50.6 
+ NR = 0.9772 
+ ISC = 2.622E-017 
+ NC = 1.227 
+ BR = 8.011 
+ IKR = 0.02229 
+ VAR = 39 
+ RB = 76 
+ IRB = 0.00015 
+ RBM = 1.2 
+ RE = 0.6235 
+ RC = 0.3131 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.24E-011 
+ VJE = 0.6708 
+ MJE = 0.348 
+ TF = 5.5E-010 
+ XTF = 30 
+ VTF = 2 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 3.264E-012 
+ VJC = 0.5079 
+ MJC = 0.42 
+ XCJC = 1 
+ TR = 1.3E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 7.905E-016 
+ N = 0.989 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2566 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*
.SUBCKT BC846BPN_PNP 1 2 3
*
Q1  1 2 3 BC846BPN_PNP 0.9196 
Q2  11 2 3 BC846BPN_PNP 0.08035
RQ1 11 1 111.9 
D   1 2  DIODE
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
.MODEL BC846BPN_PNP PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC846B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846B NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846BS
*
* NXP Semiconductors
*
* General purpose NPN/NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 2        
*
**********************************************************
*#
*
.SUBCKT BC846BS 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC846BS 0.9289  
Q2 11 2 3 BC846BS 0.07107
RQ 11 1 324.8
D1 2 1 DIODE
*
.MODEL BC846BS NPN 
+ IS = 7.908E-015 
+ NF = 0.9767 
+ ISE = 5.297E-016 
+ NE = 1.344 
+ BF = 288 
+ IKF = 0.07763 
+ VAF = 50.6 
+ NR = 0.9772 
+ ISC = 2.622E-017 
+ NC = 1.227 
+ BR = 8.011 
+ IKR = 0.02229 
+ VAR = 39 
+ RB = 76 
+ IRB = 0.00015 
+ RBM = 1.2 
+ RE = 0.6235 
+ RC = 0.3131 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.24E-011 
+ VJE = 0.6708 
+ MJE = 0.348 
+ TF = 5.5E-010 
+ XTF = 30 
+ VTF = 2 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 3.264E-012 
+ VJC = 0.5079 
+ MJC = 0.42 
+ XCJC = 1 
+ TR = 1.3E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 7.905E-016 
+ N = 0.989 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2566 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC846BT
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846BT NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846BW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846BW NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846DS
*
* NXP Semiconductors
*
* General purpose NPN/NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3       
*
**********************************************************
*#
.SUBCKT BC846DS 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC846DS 0.9289 
Q2 11 2 3 BC846DS 0.07107
RQ 11 1 324.8
D1 2 1 DIODE 
*
.MODEL BC846DS NPN 
+ IS = 7.908E-015 
+ NF = 0.9767 
+ ISE = 5.297E-016 
+ NE = 1.344 
+ BF = 288 
+ IKF = 0.07763 
+ VAF = 50.6 
+ NR = 0.9772 
+ ISC = 2.622E-017 
+ NC = 1.227 
+ BR = 8.011 
+ IKR = 0.02229 
+ VAR = 39 
+ RB = 76 
+ IRB = 0.00015 
+ RBM = 1.2 
+ RE = 0.6235 
+ RC = 0.3131 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.24E-011 
+ VJE = 0.6708 
+ MJE = 0.348 
+ TF = 5.5E-010 
+ XTF = 30 
+ VTF = 2 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 3.264E-012 
+ VJC = 0.5079 
+ MJC = 0.42 
+ XCJC = 1 
+ TR = 1.3E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 7.905E-016 
+ N = 0.989 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2566 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC846
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846S
*
* NXP Semiconductors
*
* General purpose double NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC846S NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846T
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846T NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC846W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC846W NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847AM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC847AM NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847A
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC847A NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.6193 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789
.ENDS 
**
**********************************************************
*
* BC847AT
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847AT NPN 
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789 
.ENDS
**
**********************************************************
*
* BC847AW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847AW NPN 
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.789
.ENDS 
**
**********************************************************
*
* BC847BMM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 290 @ 5V/2mA (typ.)
* 
*
*
* Package: SOT 1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT BC847BMM 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 7.755E-015
+ NF = 0.9769
+ ISE = 1.852E-015
+ NE = 1.55
+ BF = 300
+ IKF = 0.1377
+ VAF = 45.06
+ NR = 0.9755
+ ISC = 2.622E-017
+ NC = 1.037
+ BR = 12.2
+ IKR = 46.31
+ VAR = 39
+ RB = 76
+ IRB = 0.00015
+ RBM = 1.2
+ RE = 0.2401
+ RC = 0.3819
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.079E-011
+ VJE = 0.6237
+ MJE = 0.325
+ TF = 6.1E-010
+ XTF = 25
+ VTF = 2
+ ITF = 0.18
+ PTF = 0
+ CJC = 3.883E-012
+ VJC = 0.4368
+ MJC = 0.275
+ XCJC = 1
+ TR = 6.4E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 2.082E-015
+ N = 0.9929
+ BV = 1000
+ IBV = 0.001
+ RS = 857.2
+ CJO = 0
+ VJ = 1
+ M = 0.5
.ENDS
**
**********************************************************
*
* BC847BM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Emitter  
* Package Pin 2: Base
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3       
*
**********************************************************
*#
.MODEL QBC847BM NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847BPN
*
* NXP Semiconductors
*
* General purpose NPN/PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BPN_NPN NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS 
*
.MODEL QBC847BPN_PNP PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333  
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BC847B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847B NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847BS
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter     TR1;TR2 
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BS NPN
+    IS = 1.822E-14 
+    NF = 0.9932 
+    ISE = 2.894E-16 
+    NE = 1.4 
+    BF = 324.4 
+    IKF = 0.109 
+    VAF = 82 
+    NR = 0.9931 
+    ISC = 9.982E-12 
+    NC = 1.763 
+    BR = 8.29 
+    IKR = 0.09 
+    VAR = 17.9 
+    RB = 10 
+    IRB = 5E-06 
+    RBM = 5 
+    RE = 0.649 
+    RC = 0.7014 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.244E-11 
+    VJE = 0.7579 
+    MJE = 0.3656 
+    TF = 4.908E-10 
+    XTF = 9.51 
+    VTF = 2.927 
+    ITF = 0.3131 
+    PTF = 0 
+    CJC = 3.347E-12 
+    VJC = 0.5463 
+    MJC = 0.391 
+    XCJC = 0.6193 
+    TR = 9E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.979
.ENDS
**
**********************************************************
*
* BC847BT
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BT NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847BVN
*
* NXP Semiconductors
*
* General purpose NPN/PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BVN_NPN NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
*
.MODEL QBC847BVN_PNP PNP
+    IS = 2.014E-14 
+    NF = 0.9974 
+    ISE = 6.578E-15 
+    NE = 1.45 
+    BF = 315.3 
+    IKF = 0.079 
+    VAF = 39.15 
+    NR = 0.9952 
+    ISC = 1.633E-14 
+    NC = 1.15 
+    BR = 8.68 
+    IKR = 0.09 
+    VAR = 9.5 
+    RB = 10 
+    IRB = 5E-06 
+    RBM = 5E-06 
+    RE = 0.663 
+    RC = 0.718 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.135E-11 
+    VJE = 0.7071 
+    MJE = 0.3808 
+    TF = 6.546E-10 
+    XTF = 5.387 
+    VTF = 6.245 
+    ITF = 0.2108 
+    PTF = 0 
+    CJC = 6.395E-12 
+    VJC = 0.4951 
+    MJC = 0.44 
+    XCJC = 1 
+    TR = 5.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.9059
.ENDS
**
**********************************************************
*
* BC847BV
*
* NXP Semiconductors
*
* General purpose NPN double transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BV NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847BW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847BW NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847CM
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847CM NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847C
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847C NPN 
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.999
.ENDS 
**
**********************************************************
*
* BC847CT
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847CT NPN
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.999 
.ENDS
**
**********************************************************
*
* BC847CW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.SUBCKT BC847CW 1 2 3
*
Q1 1 2 3 BC847CW
D1 2 1 DIODE 
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device. 
*
.MODEL BC847CW NPN 
+ IS = 2.348E-014 
+ NF = 0.9978 
+ ISE = 1.106E-013 
+ NE = 3.846 
+ BF = 439.2 
+ IKF = 0.04092 
+ VAF = 45 
+ NR = 0.997 
+ ISC = 5.433E-015 
+ NC = 1.162 
+ BR = 15 
+ IKR = 0.01046 
+ VAR = 25 
+ RB = 69.41 
+ IRB = 0.00016 
+ RBM = 1 
+ RE = 0.45 
+ RC = 0.5044 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.12E-011 
+ VJE = 0.6645 
+ MJE = 0.3479 
+ TF = 4.1E-010 
+ XTF = 25 
+ VTF = 2 
+ ITF = 0.18 
+ PTF = 0 
+ CJC = 3.414E-012 
+ VJC = 0.5061 
+ MJC = 0.39 
+ XCJC = 1 
+ TR = 4E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 9.376E-016 
+ N = 0.9515 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 800.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC847DS
*
* NXP Semiconductors
*
* General purpose NPN/NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
* 
* Extraction date (week/year): 02/2009
* Simulator: Spice 3     
*
**********************************************************
*#
.SUBCKT BC847DS 1 2 3 
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1  1  2 3 BC847DS 0.9289 
Q2  11 2 3 BC847DS 0.07107
RQ1 1  11  324.8
D1  2  1   DIODE 
*
.MODEL BC847DS NPN 
+ IS = 7.908E-015 
+ NF = 0.9767 
+ ISE = 5.297E-016 
+ NE = 1.344 
+ BF = 288 
+ IKF = 0.07763 
+ VAF = 50.6 
+ NR = 0.9772 
+ ISC = 2.622E-017 
+ NC = 1.227 
+ BR = 8.011 
+ IKR = 0.02229 
+ VAR = 39 
+ RB = 76 
+ IRB = 0.00015 
+ RBM = 1.2 
+ RE = 0.6235 
+ RC = 0.3131 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.24E-011 
+ VJE = 0.6708 
+ MJE = 0.348 
+ TF = 5.5E-010 
+ XTF = 30 
+ VTF = 2 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 3.264E-012 
+ VJC = 0.5079 
+ MJC = 0.42 
+ XCJC = 1 
+ TR = 1.3E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 7.905E-016 
+ N = 0.989 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2566 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC847
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2        
*
**********************************************************
*#
.MODEL QBC847 NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC847T
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847T NPN 
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789 
.ENDS
**
**********************************************************
*
* BC847W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC847W NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC848B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC848B NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC848W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 110 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC848W NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC849B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC849B NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC849BW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC849BW NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC849C
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC849C NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC849CW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC849CW NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC850B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC850B NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC850B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC850BW NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC850C
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC850C NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC850CW
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC850CW NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BC856A
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* 
* Simulator: Spice 2    
*
**********************************************************
*#
.SUBCKT BC856A 1 2 3
*
Q1 1 2 3 BC856A
D1 1 2 DIODE
*
*The diode does not reflect a physical
*device but improves only modeling
*in the reverse mode of operation.
*
.MODEL BC856A PNP
+ IS = 1.731E-14
+ NF = 1.001
+ ISE = 1.349E-16
+ NE = 1.15
+ BF = 201.9
+ IKF = 0.12
+ VAF = 78
+ NR = 1.002
+ ISC = 4.264E-18
+ NC = 1.15
+ BR = 6.608
+ IKR = 0.045
+ VAR = 12.1
+ RB = 150
+ IRB = 4.5E-05
+ RBM = 0.1
+ RE = 0.7
+ RC = 0.53
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.27E-11
+ VJE = 0.7408
+ MJE = 0.3839
+ TF = 8E-10
+ XTF = 5
+ VTF = 5
+ ITF = 0.1
+ PTF = 0
+ CJC = 6.05E-12
+ VJC = 0.7186
+ MJC = 0.4775
+ XCJC = 1
+ TR = 9E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.85
.MODEL DIODE D
+ IS = 2.593E-14
+ N = 1.296
+ BV = 1000
+ IBV = 0.001
+ RS = 100
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* BC856AT
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856AT PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981 
.ENDS
**
**********************************************************
*
* BC856AW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856AW PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981
.ENDS 
**
**********************************************************
*
* BC856B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856B PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333  
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC856BS
*
* NXP Semiconductors
*
* General purpose PNP/PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT BC856BS 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC856BS 0.9196 
Q2 11 2 3 BC856BS 0.08035
RQ1 11 1 111.9
D1 1 2  DIODE
*
.MODEL BC856BS PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC856BT
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856BT PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC856BW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856BW PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC856
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 125 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856 PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC856S
*
* NXP Semiconductors
*
* General purpose PNP double transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = min. 110 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
* 
*
* Simulator: Spice 2  
*
**********************************************************
*#
.MODEL QBC856S PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC856T
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856T PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981 
.ENDS
**
**********************************************************
*
* BC856W
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 65 V 
* hFE  = 110 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC856W PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC857AM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857AM PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981 
.ENDS
**
**********************************************************
*
* BC857A
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857A PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.8981
.ENDS
**
**********************************************************
*
* BC857AT
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857AT PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981
.ENDS
**
**********************************************************
*
* BC857AW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 250 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857AW PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981
.ENDS 
**
**********************************************************
*
* BC857BMM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 290 @ 5V/2mA (typ.)
* 
*
*
* Package: SOT 1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL QBC857BMM PNP
+ IS = 1.238E-014
+ NF = 0.9926
+ ISE = 8.336E-015
+ NE = 1.568
+ BF = 292.5
+ IKF = 0.0558
+ VAF = 18.56
+ NR = 0.99
+ ISC = 4.342E-015
+ NC = 1.09
+ BR = 10.31
+ IKR = 0.07619
+ VAR = 24.01
+ RB = 39.4
+ IRB = 0.0001259
+ RBM = 3.4
+ RE = 0.2364
+ RC = 0.2327
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.778E-012
+ VJE = 0.7445
+ MJE = 0.3727
+ TF = 1E-009
+ XTF = 18
+ VTF = 5
+ ITF = 0.8
+ PTF = 0
+ CJC = 5.461E-012
+ VJC = 0.972
+ MJC = 0.522
+ XCJC = 1
+ TR = 4.7E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.79
.ENDS*
**********************************************************
*
* BC857BM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3  
*
**********************************************************
*#
.MODEL QBC857BM PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333  
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BC857B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857B PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC857BS
*
* NXP Semiconductors
*
* General purpose PNP double transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
* 
*
* Simulator: Spice 2  
*
**********************************************************
*#
.MODEL QBC857BS PNP
+    IS = 2.014E-14 
+    NF = 0.9974 
+    ISE = 6.578E-15 
+    NE = 1.45 
+    BF = 315.3 
+    IKF = 0.079 
+    VAF = 39.15 
+    NR = 0.9952 
+    ISC = 1.633E-14 
+    NC = 1.15 
+    BR = 8.68 
+    IKR = 0.09 
+    VAR = 9.5 
+    RB = 10 
+    IRB = 5E-06 
+    RBM = 5E-06 
+    RE = 0.663 
+    RC = 0.718 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.135E-11 
+    VJE = 0.7071 
+    MJE = 0.3808 
+    TF = 6.546E-10 
+    XTF = 5.387 
+    VTF = 6.245 
+    ITF = 0.2108 
+    PTF = 0 
+    CJC = 6.395E-12 
+    VJC = 0.4951 
+    MJC = 0.44 
+    XCJC = 1 
+    TR = 5.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.9059
.ENDS
**
**********************************************************
*
* BC857BT
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857BT PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059 
.ENDS
**
**********************************************************
*
* BC857BV
*
* NXP Semiconductors
*
* General purpose PNP double transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
* 
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter     TR1;TR2  
* Package Pin 2;5: Base        TR1;TR2
* Package Pin 3;6: Collector   TR2;TR1
* 
* 
*
* Simulator: Spice 2  
*
**********************************************************
*#
.MODEL QBC857BV PNP
+    IS = 2.014E-14 
+    NF = 0.9974 
+    ISE = 6.578E-15 
+    NE = 1.45 
+    BF = 315.3 
+    IKF = 0.079 
+    VAF = 39.15 
+    NR = 0.9952 
+    ISC = 1.633E-14 
+    NC = 1.15 
+    BR = 8.68 
+    IKR = 0.09 
+    VAR = 9.5 
+    RB = 10 
+    IRB = 5E-06 
+    RBM = 5E-06 
+    RE = 0.663 
+    RC = 0.718 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.135E-11 
+    VJE = 0.7071 
+    MJE = 0.3808 
+    TF = 6.546E-10 
+    XTF = 5.387 
+    VTF = 6.245 
+    ITF = 0.2108 
+    PTF = 0 
+    CJC = 6.395E-12 
+    VJC = 0.4951 
+    MJC = 0.44 
+    XCJC = 1 
+    TR = 5.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.9059
.ENDS
**
**********************************************************
*
* BC857BW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857BW PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC857CM
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857CM PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981 
.ENDS
**
**********************************************************
*
* BC857C
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857C PNP 
+     IS = 3.258E-14 
+     NF = 0.999 
+     ISE = 3.003E-15 
+     NE = 1.45 
+     BF = 515.4 
+     IKF = 0.066 
+     VAF = 25 
+     NR = 0.9985 
+     ISC = 4.393E-15 
+     NC = 1.2 
+     BR = 15.26 
+     IKR = 0.039 
+     VAR = 8 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.7071 
+     RC = 0.58 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.024E-11 
+     VJE = 0.9 
+     MJE = 0.453 
+     TF = 5.971E-10 
+     XTF = 4.137 
+     VTF = 6.31 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.345E-12 
+     VJC = 0.4254 
+     MJC = 0.423 
+     XCJC = 0.6288 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.78
.ENDS 
**
**********************************************************
*
* BC857CT
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857CT PNP
+     IS = 3.258E-14 
+     NF = 0.999 
+     ISE = 3.003E-15 
+     NE = 1.45 
+     BF = 515.4 
+     IKF = 0.066 
+     VAF = 25 
+     NR = 0.9985 
+     ISC = 4.393E-15 
+     NC = 1.2 
+     BR = 15.26 
+     IKR = 0.039 
+     VAR = 8 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.7071 
+     RC = 0.58 
+     CJE = 1.024E-11 
+     VJE = 0.9 
+     MJE = 0.453 
+     TF = 5.971E-10 
+     XTF = 4.137 
+     VTF = 6.31 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.345E-12 
+     VJC = 0.4254 
+     MJC = 0.423 
+     XCJC = 0.6288 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.78 
.ENDS
**
**********************************************************
*
* BC857CW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857CW PNP 
+     IS = 3.258E-14 
+     NF = 0.999 
+     ISE = 3.003E-15 
+     NE = 1.45 
+     BF = 515.4 
+     IKF = 0.066 
+     VAF = 25 
+     NR = 0.9985 
+     ISC = 4.393E-15 
+     NC = 1.2 
+     BR = 15.26 
+     IKR = 0.039 
+     VAR = 8 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.7071 
+     RC = 0.58 
+     CJE = 1.024E-11 
+     VJE = 0.9 
+     MJE = 0.453 
+     TF = 5.971E-10 
+     XTF = 4.137 
+     VTF = 6.31 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.345E-12 
+     VJC = 0.4254 
+     MJC = 0.423 
+     XCJC = 0.6288 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.78
.ENDS 
**
**********************************************************
*
* BC857
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857 PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333  
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BC857T
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857T PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981 
.ENDS
**
**********************************************************
*
* BC857W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 125 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC857W PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BC858B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC858B PNP  
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC858W
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 125 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC858W PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BC859B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC859B 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC859B 0.9196 
Q2 11 2 3 BC859B  0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BC859B PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC859BW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC859BW 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC859BW 0.9196 
Q2 11 2 3 BC859BW 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BC859BW PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1
*
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS*
**********************************************************
*
* BC859C
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC859C 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC859C 0.9196 
Q2 11 2 3 BC859C 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BC859C PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC859CW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
* Extraction date (week/year): 09/2002
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC859CW 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC859CW 0.9196 
Q2 11 2 3 BC859CW 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BC859CW PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC860B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC860B  1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BC860B 0.9196 
Q2 11 2 3 BC860B 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BC860B PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC860BW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 220 - 475 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC860BW PNP  
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC860C
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC860C PNP  
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC860CW
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 420 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC860CW PNP  
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BC868-25
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter  
* Package Pin 2: Collector
* Package Pin 3: Base
* 
* 
* Extraction date (week/year): 13/2008 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BC868-25 1 2 3
* 
Q1 1 2 3 BC868 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL BC868 NPN 
+ IS = 2.312E-013 
+ NF = 0.988 
+ ISE = 8.851E-014 
+ NE = 2.191 
+ BF = 273 
+ IKF = 5.5 
+ VAF = 50 
+ NR = 0.9885 
+ ISC = 6.808E-014 
+ NC = 3 
+ BR = 155.6 
+ IKR = 4 
+ VAR = 17 
+ RB = 15 
+ IRB = 2E-006 
+ RBM = 0.65 
+ RE = 0.073 
+ RC = 0.073 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.678E-010 
+ VJE = 0.732 
+ MJE = 0.3484 
+ TF = 5.8E-010 
+ XTF = 1.5 
+ VTF = 2.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 3.406E-011 
+ VJC = 2 
+ MJC = 0.3142 
+ XCJC = 1 
+ TR = 6.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 2.702E-015 
+ N = 1.2 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BC868
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC868 NPN
+     IS=2.474E-13
+     NF=0.9998
+     ISE=4.403E-14
+     NE=1.4
+     BF=196.2
+     IKF=4.836
+     VAF=127.5
+     NR=0.9995
+     ISC=2.009E-13
+     NC=1.5
+     BR=30.57
+     IKR=0.3264
+     VAR=17.26
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.1021
+     RC=0.0252
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.226E-10
+     VJE=0.8011
+     MJE=0.3833
+     TF=6.469E-10
+     XTF=1.257
+     VTF=1.735
+     ITF=0.3542
+     PTF=0
+     CJC=8.735E-11
+     VJC=0.5995
+     MJC=0.4009
+     XCJC=0.5
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.6153
.ENDS
**
**********************************************************
*
* BC869-16
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 100 - 250 @ 1V/500mA
* 
*
*
* Package: SOT89
* 
* Package Pin 1: Emmitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC869-16 PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309
.ENDS
**
**********************************************************
*
* BC869_25
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 160 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter  
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QBC869-25 PNP
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309 
.ENDS
**
**********************************************************
*
* BC869
*
* NXP Semiconductors
*
* PNP medium power PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBC869 PNP
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309 
.ENDS
**
**********************************************************
*
* BCP51-10
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP51-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCP51-16
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP51-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP51
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP51 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCP52-10
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP52-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP52-16
*
* NXP Semiconductors
*
* Medium frequency PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP52-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP52
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP52 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP53-10
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP53-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP53-16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP53-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP53
*
* NXP Semiconductors
*
* Medium frequency PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP53 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCP54-10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP54-10 1 2 3
*
Q1 1 2 3 BCP54-10
D1 2 1  DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP54-10 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP54-16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP54-16 1 2 3
*
Q1 1 2 3 BCP54-16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP54-16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP54
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP54 1 2 3 
*
Q1 1 2 3 BCP54
D1 2 1 DIODE
*
.MODEL BCP54 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP55_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP55-10 1 2 3
*
Q1 1 2 3 BCP55-10
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP55-10 NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP55_16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP55-16 1 2 3
*
Q1 1 2 3 BCP55-16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP55-16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP55
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP55 1 2 3
*
Q1 1 2 3 BCP55
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP55 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP56_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP56-10 1 2 3
*
Q1 1 2 3 BCP56-10
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP56-10 NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP56_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP56-16 1 2 3
*
Q1 1 2 3 BCP56-16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP56-16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP56
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 37/2009 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP56 1 2 3
*
Q1 1 2 3 BCP56
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCP56 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP68-25
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 160 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP68-25 NPN
+     IS=2.474E-13
+     NF=0.9998
+     ISE=4.403E-14
+     NE=1.400
+     BF=196.2
+     IKF=4.8360
+     VAF=127.5
+     NR=0.9995
+     ISC=2.009E-13
+     NC=1.500
+     BR=30.57
+     IKR=0.3264
+     VAR=17.26
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.1021
+     RC=9.070E-02
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.2260E-10
+     VJE=0.8011
+     MJE=0.3833
+     TF=6.469E-10
+     XTF=1.257
+     VTF=1.735
+     ITF=0.3542
+     PTF=0
+     CJC=8.735E-11
+     VJC=0.5995
+     MJC=0.4009
+     XCJC=0.500
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.6153 
.ENDS
**
**********************************************************
*
* BCP68
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 2V/500mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base  
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
* Extraction date (week/year): 13/2008 
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCP68 1 2 3
* 
Q1 1 2 3 BCP68 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL BCP68 NPN 
+ IS = 2.312E-013 
+ NF = 0.988 
+ ISE = 8.851E-014 
+ NE = 2.191 
+ BF = 273 
+ IKF = 5.5 
+ VAF = 50 
+ NR = 0.9885 
+ ISC = 6.808E-014 
+ NC = 3 
+ BR = 155.6 
+ IKR = 4 
+ VAR = 17 
+ RB = 15 
+ IRB = 2E-006 
+ RBM = 0.65 
+ RE = 0.073 
+ RC = 0.073 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.678E-010 
+ VJE = 0.732 
+ MJE = 0.3484 
+ TF = 5.8E-010 
+ XTF = 1.5 
+ VTF = 2.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 3.406E-011 
+ VJC = 2 
+ MJC = 0.3142 
+ XCJC = 1 
+ TR = 6.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 2.702E-015 
+ N = 1.2 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCP69-16
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 100 - 250 @ 1V/500mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP69-16 PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309
.ENDS
**
**********************************************************
*
* BCP69-25
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 160 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP69-25 PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309
.ENDS
**
**********************************************************
*
* BCP69
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = 85 - 375 @ 1V/500mA
* 
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCP69 PNP 
+     IS=2.105E-13
+     NF=0.9952
+     ISE=3.766E-15
+     NE=1.4
+     BF=281.1
+     IKF=2.834
+     VAF=44.23
+     NR=0.9869
+     ISC=2.789E-11
+     NC=2.447
+     BR=45.67
+     IKR=0.344
+     VAR=7.259
+     RB=1
+     IRB=1E-06
+     RBM=1
+     RE=0.05919
+     RC=0.0262
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.046E-10
+     VJE=0.8827
+     MJE=0.448
+     TF=7.919E-10
+     XTF=1.397
+     VTF=2.332
+     ITF=0.409
+     PTF=0
+     CJC=1.378E-10
+     VJC=0.1427
+     MJC=0.3018
+     XCJC=0.508
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.309
.ENDS
**
**********************************************************
*
* BCV26
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min 20000 @ 5V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV26 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 3 22 2 BCV26 AREA = 4.68 
* PSPICE:
* Q2 3 22 2 BCV26 4.68 
*
Q1 1 2 33 BCV26 1 
Q2 1 33 3 BCV26 4.68
*
.MODEL BCV26 PNP 
+ IS = 1.593E-14 
+ NF = 0.9855 
+ ISE = 7E-15 
+ NE = 1.5 
+ BF = 280 
+ IKF = 0.09 
+ VAF = 31 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 4 
+ RB = 600 
+ IRB = 1E-06 
+ RBM = 10 
+ RE = 0.1 
+ RC = 1 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.9 
+ MJE = 0.4141 
+ TF = 9.9E-10 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 7.95E-12 
+ VJC = 0.9 
+ MJC = 0.5622 
+ XCJC = 0.9 
+ TR = 1E-15 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98
.ENDS
**
**********************************************************
*
* BCV27 
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = 20000 @ 5V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base  
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV27 1 2 3 
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 3 22 2 BCV27 AREA = 5.1 
* PSPICE:
* Q2 3 22 2 BCV27 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 BCV27 1 
Q2 1 33 3 BCV27 5.1 
*
.MODEL BCV27 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* BCV28 
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 20000 @ 5V/100mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV28 1 2 3
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 2 11 1 33 BCV28 AREA = 4.68 
* PSPICE:
* Q2 2 11 1 33 BCV28 4.68 
*
Q1 1 2 33 BCV28 1 
Q2 1 33 3 BCV28 4.68 
*
.MODEL BCV28 PNP 
+ IS = 1.593E-14 
+ NF = 0.9855 
+ ISE = 7E-15 
+ NE = 1.5 
+ BF = 280 
+ IKF = 0.09 
+ VAF = 31 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 4 
+ RB = 600 
+ IRB = 1E-06 
+ RBM = 10 
+ RE = 0.1 
+ RC = 1 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.9 
+ MJE = 0.4141 
+ TF = 9.9E-10 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 7.95E-12 
+ VJC = 0.9 
+ MJC = 0.5622 
+ XCJC = 0.9 
+ TR = 1E-15 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.ENDS
**
**********************************************************
*
* BCV29
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 20000 @ 5V/100mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV29 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 BCV29 AREA = 5.13 
* PSPICE:
* Q2 1 22 3 BCV29 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 BCV29 1 
Q2 1 33 3 BCV29 5.1 
*
.MODEL BCV29 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* BCV46
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = min. 10000 @ 5V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV46 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 11 222 33 BCV46 AREA = 4.68 
* PSPICE:
* Q2 11 222 33 BCV46 4.68 
*
Q1 1 2 33 BCV46 1 
Q2 1 33 3 BCV46 4.68 
*
.MODEL BCV46 PNP 
+ IS = 1.593E-14 
+ NF = 0.9855 
+ ISE = 7E-15 
+ NE = 1.5 
+ BF = 280 
+ IKF = 0.09 
+ VAF = 31 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 4 
+ RB = 600 
+ IRB = 1E-06 
+ RBM = 10 
+ RE = 0.1 
+ RC = 1 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.9 
+ MJE = 0.4141 
+ TF = 9.9E-10 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 7.95E-12 
+ VJC = 0.9 
+ MJC = 0.5622 
+ XCJC = 0.9 
+ TR = 1E-15 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.ENDS
**
**********************************************************
*
* BCV47
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = min. 10000 @ 5V/100mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV47 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 BCV27 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 BCV27 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 BCV47 1 
Q2 1 33 3 BCV47 5.1 
*
.MODEL BCV47 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* BCV48
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = min. 10000 @ 5V/100mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV48 1 2 3
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 11 222 33 BCV48 AREA = 4.68 
* PSPICE:
* Q2 11 222 33 BCV48 4.68 
*
Q1 1 2 33 BCV48 1 
Q2 1 33 3 BCV48 4.68 
*
.MODEL BCV48 PNP 
+ IS = 1.593E-14 
+ NF = 0.9855 
+ ISE = 7E-15 
+ NE = 1.5 
+ BF = 280 
+ IKF = 0.09 
+ VAF = 31 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 4 
+ RB = 600 
+ IRB = 1E-06 
+ RBM = 10 
+ RE = 0.1 
+ RC = 1 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.9 
+ MJE = 0.4141 
+ TF = 9.9E-10 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 7.95E-12 
+ VJC = 0.9 
+ MJC = 0.5622 
+ XCJC = 0.9 
+ TR = 1E-15 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.ENDS
**
**********************************************************
*
* BCV49
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = min. 10000 @ 5V/100mA
* 
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* 
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV49 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 BCV49 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 BCV49 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 BCV49 1 
Q2 1 33 3 BCV49 5.1 
*
.MODEL BCV49 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* BCV61A
*
* NXP Semiconductors
*
* General-purpose NPN double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 110 - 800 @ 5V/2mA
* 
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
* 
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV61A 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789
.ENDS
**
**********************************************************
*
* BCV61B
*
* NXP Semiconductors
*
* General-purpose NPN double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 200 - 450 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
* 
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV61B 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCV61C
*
* NXP Semiconductors
*
* General-purpose NPN double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
* 
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV61C 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN NPN
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.999
.ENDS
**
**********************************************************
*
* BCV61
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 30 V 
* hFE  = 110 - 220 @ 5V/2mA
* 
*
*
* Package: SOT 143
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.SUBCKT BCV61 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCV62A
*
* NXP Semiconductors
*
* General-purpose PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 125 - 250 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV62A 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333  
+     FC = 0.8981
.ENDS
**
**********************************************************
*
* BCV62B
*
* NXP Semiconductors
*
* General-purpose PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 220 - 475 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV62B 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BCV62C
*
* NXP Semiconductors
*
* General-purpose PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 420 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
*
* 
* Simulator: Spice 2 
*
**********************************************************
*#
.SUBCKT BCV62C 1 2 3 4
*
Q1 1 2 3 MAIN
Q2 2 2 4 MAIN
*
.MODEL MAIN PNP
+     IS = 3.258E-14 
+     NF = 0.999 
+     ISE = 3.003E-15 
+     NE = 1.45 
+     BF = 515.4 
+     IKF = 0.066 
+     VAF = 25 
+     NR = 0.9985 
+     ISC = 4.393E-15 
+     NC = 1.2 
+     BR = 15.26 
+     IKR = 0.039 
+     VAR = 8 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.7071 
+     RC = 0.58 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.024E-11 
+     VJE = 0.9 
+     MJE = 0.453 
+     TF = 5.971E-10 
+     XTF = 4.137 
+     VTF = 6.31 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.345E-12 
+     VJC = 0.4254 
+     MJC = 0.423 
+     XCJC = 0.6288 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.78
.ENDS
**
**********************************************************
*
* BCV62
*
* NXP Semiconductors
*
* General-purpose PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 100 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector TR2; Base TR1 and TR2
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1
* Package Pin 4: Emitter   TR2
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT BCV62 1 2 3 4
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCV62 0.9196 
Q2 11 2 3 BCV62 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
Q3 2 2 4 BCV62 0.9196 
Q4 22 2 4 BCV62 0.08035
RQ2 22 2 111.9
D2 2 2 DIODE
*
.MODEL BCV62 PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCV63B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 30 V 
* hFE  = 110 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143
* 
* Package Pin 1: Collector TR2 and Base TR1
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1 and TR2
* Package Pin 4: Base      TR2 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCV63B NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCV63
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 30 V 
* hFE  = 110 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143
* 
* Package Pin 1: Collector TR2 and Base TR1
* Package Pin 2: Collector TR1
* Package Pin 3: Emitter   TR1 and TR2
* Package Pin 4: Base      TR2
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCV63 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCV64B
*
* NXP Semiconductors
*
* General-purpose PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 220 - 475 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1: Collector; Base  TR2;TR1
* Package Pin 2: Collector        TR1
* Package Pin 3: Emitter          TR1 and TR2
* Package Pin 4: Base             TR2
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCV64B 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCV64B 0.9196 
Q2 11 2 3 BCV64B 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCV64B PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCV65
*
* NXP Semiconductors
*
* General-purpose NPN/PNP double transistors
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 75 - 800 @ 5V/2mA
*
*
*
* Package: SOT 143B
* 
* Package Pin 1;3: Collector
* Package Pin 2:   Common Base
* Package Pin 4:   Common Emitter
*
*  
*
* Simulator: Spice 2 
*
**********************************************************
*#
.MODEL QBCV65_NPN NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
*
.MODEL QBCV65_PNP PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS 
**
**********************************************************
*
* BCV71
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 110 - 220 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCV71 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCV72
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 220 - 450 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCV72 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW29
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 120 - 260 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW29 PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     XTB = 0 
+     XTI = 3 
+     EG = 1.11 
+     FC = 0.8981
.ENDS 
**
**********************************************************
*
* BCW30
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 215 - 500 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW30 PNP
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BCW31
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 110 - 220 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW31 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 220 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW32
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 200 - 450 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW32 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW33
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 420 - 800 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW33 NPN 
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 420 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW60B
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 180 - 310 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW60B NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW60C
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 250 - 460 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW60C NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW60D
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = 380 - 630 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW60D NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW61B
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = min. 30 @ 5V/10?A
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW61B 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW61B 0.9196 
Q2 11 2 3 BCW61B 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCW61B PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCW61C
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 32 V 
* hFE  = min. 40 @ 5V/10?A
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW61C 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW61C 0.9196 
Q2 11 2 3 BCW61C 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCW61C PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCW61D
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 32   V 
* hFE  = min. 100 @ 5V/10?A
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW61D 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW61D 0.9196 
Q2 11 2 3 BCW61D 0.08035
RQ 11 1 111.9
D1 1 2 DIODE 
*
.MODEL BCW61D PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCW69
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45   V 
* hFE  = 120 - 260 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW69 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW69 0.9196 
Q2 11 2 3 BCW69 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCW69 PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 260 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCW70
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45   V 
* hFE  = 215 - 500 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW70 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW70 0.9196 
Q2 11 2 3 BCW70 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCW70 PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCW71
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 110 - 220 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
* 
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW71 NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW72
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 200 - 450 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCW72 NPN
+     IS = 1.822E-14 
+     NF = 0.9932 
+     ISE = 2.894E-16 
+     NE = 1.4 
+     BF = 324.4 
+     IKF = 0.109 
+     VAF = 82 
+     NR = 0.9931 
+     ISC = 9.982E-12 
+     NC = 1.763 
+     BR = 8.29 
+     IKR = 0.09 
+     VAR = 17.9 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.649 
+     RC = 0.7014 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.244E-11 
+     VJE = 0.7579 
+     MJE = 0.3656 
+     TF = 4.908E-10 
+     XTF = 9.51 
+     VTF = 2.927 
+     ITF = 0.3131 
+     PTF = 0 
+     CJC = 3.347E-12 
+     VJC = 0.5463 
+     MJC = 0.391 
+     XCJC = 0.6193 
+     TR = 9E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.979
.ENDS
**
**********************************************************
*
* BCW89
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 60  V 
* hFE  = 120 - 260 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCW89 1 2 3
*
* Diode D1, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 BCW89 0.9196 
Q2 11 2 3 BCW89 0.08035
RQ 11 1 111.9
D1 1 2 DIODE
*
.MODEL BCW89 PNP 
+ IS = 1.619E-014 
+ NF = 0.9835 
+ ISE = 7.218E-015 
+ NE = 1.521 
+ BF = 266.9 
+ IKF = 0.08202 
+ VAF = 12.88 
+ NR = 0.977 
+ ISC = 3.672E-015 
+ NC = 1.122 
+ BR = 10.73 
+ IKR = 0.03072 
+ VAR = 24.01 
+ RB = 39.4 
+ IRB = 0.0001272 
+ RBM = 1.321 
+ RE = 0.3 
+ RC = 0.5566 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.14E-011 
+ VJE = 0.7923 
+ MJE = 0.4031 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 5 
+ ITF = 0.52 
+ PTF = 0 
+ CJC = 5.839E-012 
+ VJC = 1 
+ MJC = 0.5758 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79
.MODEL DIODE D 
+ IS = 5.409E-017 
+ N = 0.9852 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2.939 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX17
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX17 PNP
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BCX18
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 25 V 
* hFE  = 100 - 600 @ 1V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX18 PNP
+     IS=1.08E-13
+     NF=0.99
+     ISE=2.713E-14
+     NE=1.4
+     BF=385.7
+     IKF=0.3603
+     VAF=31.29
+     NR=0.9849
+     ISC=5.062E-13
+     NC=1.295
+     BR=20.57
+     IKR=0.054
+     VAR=11.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1415
+     RC=0.2623
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.114E-11
+     VJE=0.8911
+     MJE=0.4417
+     TF=7.359E-10
+     XTF=1.859
+     VTF=3.813
+     ITF=0.4393
+     PTF=0
+     CJC=2.656E-11
+     VJC=0.62
+     MJC=0.4836
+     XCJC=0.459
+     TR=5.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.99
.ENDS
**
**********************************************************
*
* BCX19
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 500 mA
* VCEO = 45 V 
* hFE  = 100 - 600 @ 1V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX19 NPN
+    IS = 9.198E-14
+    NF = 1.003
+    ISE = 4.468E-16
+    NE = 1.65
+    BF = 338.8 
+    IKF = 0.4913
+    VAF = 107.9
+    NR = 1.002
+    ISC = 5.109E-15
+    NC = 1.071 
+    BR = 29.48
+    IKR = 0.193
+    VAR = 25
+    RB = 1
+    IRB = 1000
+    RBM = 1 
+    RE = 0.2126
+    RC = 0.143
+    XTB = 0
+    EG = 1.11
+    XTI = 3
+    CJE = 3.825E-11 
+    VJE = 0.7004
+    MJE = 0.364
+    TF = 5.229E-10
+    XTF = 219.7
+    VTF = 3.502 
+    ITF = 7.257
+    PTF = 0
+    CJC = 1.27E-11
+    VJC = 0.4431
+    MJC = 0.3983 
+    XCJC = 0.4555
+    TR = 7E-11
+    CJS = 0
+    VJS = 0.75
+    MJS = 0.333
+    FC = 0.905
.ENDS 
**
**********************************************************
*
* BCX51-10 
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX51-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX51-16 
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX51-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX51
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX51 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX52-10 
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX52-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX52-16
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX52-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX52 
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX52 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX53-10
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX53-10 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX53-16
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX53-16 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS
**
**********************************************************
*
* BCX53
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX53 PNP 
+     IS=6.1530E-14
+     NF=0.9911
+     ISE=1.382E-16
+     NE=1.089
+     BF=150.8
+     IKF=1.225
+     VAF=105.4
+     NR=0.9965
+     ISC=6.480E-15
+     NC=1.022
+     BR=8.074
+     IKR=0.3627
+     VAR=18.20
+     RB=2
+     IRB=1E-06
+     RBM=2
+     RE=5.562E-02
+     RC=0.1449
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.157E-10
+     VJE=0.7300
+     MJE=0.3751
+     TF=8.666E-10
+     XTF=1.231
+     VTF=3.008
+     ITF=0.4581
+     PTF=0
+     CJC=5.264E-11
+     VJC=0.6591
+     MJC=0.4533
+     XCJC=0.4401
+     TR=2.75E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9427 
.ENDS 
**
**********************************************************
*
* BCX54_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX54-10 1 2 3
*
Q1 1 2 3 BCX54-10
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX54-10 NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX54_16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX54-16 1 2 3
*
Q1 1 2 3 BCX54_16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX54_16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX54
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 45 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX54 1 2 3
*
Q1 1 2 3 BCX54
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX54 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX55_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX55-10 1 2 3
*
Q1 1 2 3 BCX55_10
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX55_10 NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX55_16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX55-16 1 2 3
*
Q1 1 2 3 BCX55_16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX55_16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX55
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX55 1 2 3
*
Q1 1 2 3 BCX55
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX55 NPN 
+ IS = 7.905E-014 
+ NF = 0.9948 
+ ISE = 6.507E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX56_10
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 63 - 160 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX56-10 1 2 3
*
Q1 1 2 3 BCX56_10
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX56_10 NPN 
+ IS = 7.17E-014 
+ NF = 0.9928 
+ ISE = 1.113E-014 
+ NE = 1.443 
+ BF = 119 
+ IKF = 0.65 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX56_16
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 100 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT BCX56-16 1 2 3
*
Q1 1 2 3 BCX56_16
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL BCX56_16 NPN 
+ IS = 8.811E-014 
+ NF = 0.9954 
+ ISE = 1.113E-014 
+ NE = 1.52 
+ BF = 146 
+ IKF = 0.465 
+ VAF = 8 
+ NR = 0.9943 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.323E-014 
+ N = 0.9814 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3185 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BCX56 
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = 63 - 250 @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009  
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QBCX56 NPN 
+ IS = 6.8405E-014 
+ NF = 0.9951 
+ ISE = 5.801E-015 
+ NE = 1.302 
+ BF = 143 
+ IKF = 0.45 
+ VAF = 8 
+ NR = 0.9851 
+ ISC = 2.266E-014 
+ NC = 1.361 
+ BR = 35.83 
+ IKR = 1.8 
+ VAR = 81 
+ RB = 10.4 
+ IRB = 0.0011 
+ RBM = 2.5 
+ RE = 0.0864 
+ RC = 0.1173 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.442E-010 
+ VJE = 0.7013 
+ MJE = 0.3245 
+ TF = 7.8E-010 
+ XTF = 7 
+ VTF = 5 
+ ITF = 2 
+ PTF = 0 
+ CJC = 2.052E-011 
+ VJC = 0.5 
+ MJC = 0.4015 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* BCX70G
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 120 - 220 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX70G NPN
+     IS = 9.677E-15 
+     NF = 0.9922 
+     ISE = 5.44E-15 
+     NE = 2 
+     BF = 182.1 
+     IKF = 0.14 
+     VAF = 143.8 
+     NR = 0.9935 
+     ISC = 5.236E-12 
+     NC = 1.53 
+     BR = 7.004 
+     IKR = 0.06 
+     VAR = 31.15 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 4 
+     RE = 0.78 
+     RC = 0.656 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.443E-11 
+     VJE = 0.733 
+     MJE = 0.3514 
+     TF = 6.04E-10 
+     XTF = 8.94 
+     VTF = 3.78 
+     ITF = 0.2711 
+     PTF = 0 
+     CJC = 3.287E-12 
+     VJC = 0.5444 
+     MJC = 0.3954 
+     XCJC = 0.693 
+     TR = 1.1E-07 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.789
.ENDS
**
**********************************************************
*
* BCX70H
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 180 - 310 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX70H NPN 
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
**
**********************************************************
*
* BCX70J
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 250 - 460 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX70J NPN 
+     IS=2.409E-14
+     NF=0.997
+     ISE=9.842E-16
+     NE=1.464
+     BF=351.8  
+     IKF=0.1371
+     VAF=52.64
+     NR=1.004
+     ISC=7.455E-14
+     NC=1.237  
+     BR=9.646
+     IKR=0.1144
+     VAR=364.5
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.3666
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.233E-11  
+     VJE=0.707
+     MJE=0.3698
+     TF=4.689E-10
+     XTF=100
+     VTF=2.586  
+     ITF=0.5651
+     PTF=0
+     CJC=3.847E-12
+     VJC=0.35
+     MJC=0.3739  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8945 
.ENDS
**
**********************************************************
*
* BCX70K
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 1 A
* VCEO = 45 V 
* hFE  = 380 - 630 @ 5V/2mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX70K NPN 
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.999
.ENDS
**
**********************************************************
*
* BCX71H
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 180 - 310 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX71H PNP 
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.8981
.ENDS
**
**********************************************************
*
* BCX71J
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 250 - 460 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX71J PNP 
+     IS = 2.014E-14 
+     NF = 0.9974 
+     ISE = 6.578E-15 
+     NE = 1.45 
+     BF = 315.3 
+     IKF = 0.079 
+     VAF = 39.15 
+     NR = 0.9952 
+     ISC = 1.633E-14 
+     NC = 1.15 
+     BR = 8.68 
+     IKR = 0.09 
+     VAR = 9.5 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5E-06 
+     RE = 0.663 
+     RC = 0.718 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.135E-11 
+     VJE = 0.7071 
+     MJE = 0.3808 
+     TF = 6.546E-10 
+     XTF = 5.387 
+     VTF = 6.245 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.395E-12 
+     VJC = 0.4951 
+     MJC = 0.44 
+     XCJC = 0.6288 
+     TR = 5.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9059
.ENDS
**
**********************************************************
*
* BCX71K
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 380 - 630 @ 5V/2mA
* 
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBCX71K PNP 
+     IS = 3.258E-14 
+     NF = 0.999 
+     ISE = 3.003E-15 
+     NE = 1.45 
+     BF = 515.4 
+     IKF = 0.066 
+     VAF = 25 
+     NR = 0.9985 
+     ISC = 4.393E-15 
+     NC = 1.2 
+     BR = 15.26 
+     IKR = 0.039 
+     VAR = 8 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.7071 
+     RC = 0.58 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.024E-11 
+     VJE = 0.9 
+     MJE = 0.453 
+     TF = 5.971E-10 
+     XTF = 4.137 
+     VTF = 6.31 
+     ITF = 0.2108 
+     PTF = 0 
+     CJC = 6.345E-12 
+     VJC = 0.4254 
+     MJC = 0.423 
+     XCJC = 0.6288 
+     TR = 3.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.78
.ENDS 
**
**********************************************************
*
* BF199
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 25 mA
* VCEO = 25 V 
* hFE  = min. 38 @ 10V/7mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF199 NPN 
+    IS = 4.031E-16 
+    NF = 0.9847 
+    ISE = 9.187E-17 
+    NE = 1.24 
+    BF = 122.5 
+    IKF = 0.065 
+    VAF = 135 
+    NR = 0.991 
+    ISC = 4.1E-13 
+    NC = 1.37 
+    BR = 5.036 
+    IKR = 0.04 
+    VAR = 8 
+    RB = 16 
+    IRB = 0.0004 
+    RBM = 8 
+    RE = 0.402 
+    RC = 5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.258E-12 
+    VJE = 0.444 
+    MJE = 0.136 
+    TF = 2.92E-10 
+    XTF = 8 
+    VTF = 8 
+    ITF = 0.14 
+    PTF = 20 
+    CJC = 9.333E-13 
+    VJC = 0.2488 
+    MJC = 0.1974 
+    XCJC = 0.86 
+    TR = 3.5E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.9001
.ENDS
**
**********************************************************
*
* BF370
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 100 mA
* VCEO = 15 V 
* hFE  = min. 40 @ 1V/10 mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF370 NPN
+ IS = 1.751E-15 
+ NF = 0.998 
+ ISE = 3.503E-16 
+ NE = 1.148 
+ BF = 121.3 
+ IKF = 0.17 
+ VAF = 57 
+ NR = 0.988 
+ ISC = 7.44E-11 
+ NC = 1.55 
+ BR = 0.3812 
+ IKR = 0.05 
+ VAR = 17 
+ RB = 35 
+ IRB = 0.0002423 
+ RBM = 0.05 
+ RE = 0.729 
+ RC = 1.01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.807E-12 
+ VJE = 0.55 
+ MJE = 0.3135 
+ TF = 2.073E-10 
+ XTF = 1 
+ VTF = 11 
+ ITF = 0.17 
+ PTF = 0 
+ CJC = 1.889E-12 
+ VJC = 0.8844 
+ MJC = 0.3014 
+ XCJC = 1 
+ TR = 5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8517
.ENDS
**
**********************************************************
*
* BF420
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF420 NPN
+     IS=7.974E-15
+     NF=0.993
+     ISE=2.266E-16
+     NE=1.18
+     BF=122
+     IKF=0.01029
+     VAF=25.51
+     NR=0.999
+     ISC=4.33E-12
+     NC=1.397
+     BR=6.235
+     IKR=0.02746
+     VAR=19.43
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3814
+     RC=0.439
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.742E-11
+     VJE=0.4581
+     MJE=0.3092
+     TF=7.073E-10
+     XTF=289.5
+     VTF=6.144
+     ITF=0.1495
+     PTF=0
+     CJC=5.045E-12
+     VJC=0.197
+     MJC=0.1947
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC = 0.8555
.ENDS
**
**********************************************************
*
* BF421
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF421 PNP
+    IS = 9.124E-15 
+    NF = 0.9904 
+    ISE = 1.672E-15 
+    NE = 1.527 
+    BF = 198.2 
+    IKF = 0.13 
+    VAF = 465.9 
+    NR = 0.99 
+    ISC = 2.139E-13 
+    NC = 1.08 
+    BR = 1.256 
+    IKR = 0.1 
+    VAR = 13 
+    RB = 5 
+    IRB = 1E-06 
+    RBM = 0.5 
+    RE = 0.635 
+    RC = 1.42 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.447E-11 
+    VJE = 0.8484 
+    MJE = 0.3884 
+    TF = 1.38E-09 
+    XTF = 21.78 
+    VTF = 2 
+    ITF = 0.065 
+    PTF = 0 
+    CJC = 8.483E-12 
+    VJC = 0.6298 
+    MJC = 0.4561 
+    XCJC = 0.619
+    TR = 1E-32 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333  
+    FC = 0.99
.ENDS
**
**********************************************************
*
* BF422
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF422 NPN
+     IS=7.974E-15
+     NF=0.993
+     ISE=2.266E-16
+     NE=1.18
+     BF=122
+     IKF=0.01029
+     VAF=25.51
+     NR=0.999
+     ISC=4.33E-12
+     NC=1.397
+     BR=6.235
+     IKR=0.02746
+     VAR=19.43
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3814
+     RC=0.439
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.742E-11
+     VJE=0.4581
+     MJE=0.3092
+     TF=7.073E-10
+     XTF=289.5
+     VTF=6.144
+     ITF=0.1495
+     PTF=0
+     CJC=5.045E-12
+     VJC=0.197
+     MJC=0.1947
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC = 0.8555
.ENDS
**
**********************************************************
*
* BF423
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF423 PNP
+    IS = 9.124E-15 
+    NF = 0.9904 
+    ISE = 1.672E-15 
+    NE = 1.527 
+    BF = 198.2 
+    IKF = 0.13 
+    VAF = 465.9 
+    NR = 0.99 
+    ISC = 2.139E-13 
+    NC = 1.08 
+    BR = 1.256 
+    IKR = 0.1 
+    VAR = 13 
+    RB = 5 
+    IRB = 1E-06 
+    RBM = 0.5 
+    RE = 0.635 
+    RC = 1.42 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.447E-11 
+    VJE = 0.8484 
+    MJE = 0.3884 
+    TF = 1.38E-09 
+    XTF = 21.78 
+    VTF = 2 
+    ITF = 0.065 
+    PTF = 0 
+    CJC = 8.483E-12 
+    VJC = 0.6298 
+    MJC = 0.4561 
+    XCJC = 0.619
+    TR = 1E-32 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333  
+    FC = 0.99
.ENDS
**
**********************************************************
*
* BF550
*
* NXP Semiconductors
*
* Medium frequency PNP transistor
* IC   = 25 mA
* VCEO = 40 V 
* hFE  = min. 50 @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF550 PNP
+    IS = 5.565E-16 
+    NF = 0.9971 
+    ISE = 4.594E-16 
+    NE = 1.4 
+    BF = 114 
+    IKF = 0.034 
+    VAF = 42.41 
+    NR = 0.9989 
+    ISC = 2.38E-16 
+    NC = 1 
+    BR = 4.5 
+    IKR = 0.00056 
+    VAR = 5 
+    RB = 21 
+    IRB = 0.0005556 
+    RBM = 0.73 
+    RE = 0.4 
+    RC = 1.4 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 1.536E-12 
+    VJE = 0.7931 
+    MJE = 0.3515 
+    TF = 2E-10 
+    XTF = 7.5 
+    VTF = 3.7 
+    ITF = 0.06 
+    PTF = 0 
+    CJC = 1.066E-12 
+    VJC = 0.9168 
+    MJC = 0.397 
+    XCJC = 0.828 
+    TR = 1E-32 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.9297
.ENDS
**
**********************************************************
*
* BF570
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 100 mA
* VCEO = 15 V 
* hFE  = min. 40 @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF570 NPN 
+ IS = 1.751E-15 
+ NF = 0.998 
+ ISE = 3.503E-16 
+ NE = 1.148 
+ BF = 121.3 
+ IKF = 0.17 
+ VAF = 57 
+ NR = 0.988 
+ ISC = 7.44E-11 
+ NC = 1.55 
+ BR = 0.3812 
+ IKR = 0.05 
+ VAR = 17 
+ RB = 35 
+ IRB = 0.0002423 
+ RBM = 0.05 
+ RE = 0.729 
+ RC = 1.01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.807E-12 
+ VJE = 0.55 
+ MJE = 0.3135 
+ TF = 2.073E-10 
+ XTF = 1 
+ VTF = 11 
+ ITF = 0.17 
+ PTF = 0 
+ CJC = 1.889E-12 
+ VJC = 0.8844 
+ MJC = 0.3014 
+ XCJC = 1 
+ TR = 5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8517
.ENDS
**
**********************************************************
*
* BF620
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF620 NPN
+     IS=7.974E-15
+     NF=0.993
+     ISE=2.266E-16
+     NE=1.18
+     BF=122
+     IKF=0.01029
+     VAF=25.51
+     NR=0.999
+     ISC=4.33E-12
+     NC=1.397
+     BR=6.235
+     IKR=0.02746
+     VAR=19.43
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3814
+     RC=0.439
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.742E-11
+     VJE=0.4581
+     MJE=0.3092
+     TF=7.073E-10
+     XTF=289.5
+     VTF=6.144
+     ITF=0.1495
+     PTF=0
+     CJC=5.045E-12
+     VJC=0.197
+     MJC=0.1947
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC = 0.8555
.ENDS
**
**********************************************************
*
* BF621
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25 mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*  
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF621 PNP 
+ IS = 8.912E-15 
+ NF = 0.9978 
+ ISE = 1.62E-15 
+ NE = 1.45 
+ BF = 130 
+ IKF = 0.015 
+ VAF = 165 
+ NR = 0.9979 
+ ISC = 7.8E-13 
+ NC = 1.21 
+ BR = 2.018 
+ IKR = 0.07 
+ VAR = 86 
+ RB = 200 
+ IRB = 8.362E-06 
+ RBM = 0.001 
+ RE = 0.62 
+ RC = 0.255 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.552E-11 
+ VJE = 0.7704 
+ MJE = 0.3878 
+ TF = 1.2E-09 
+ XTF = 9 
+ VTF = 5 
+ ITF = 0.06 
+ PTF = 0 
+ CJC = 8.382E-12 
+ VJC = 0.9588 
+ MJC = 0.5687 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* BF622
*
* NXP Semiconductors
*
* High Voltage NPN transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF622 NPN
+     IS=7.974E-15
+     NF=0.993
+     ISE=2.266E-16
+     NE=1.18
+     BF=122
+     IKF=0.01029
+     VAF=25.51
+     NR=0.999
+     ISC=4.33E-12
+     NC=1.397
+     BR=6.235
+     IKR=0.02746
+     VAR=19.43
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3814
+     RC=0.439
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.742E-11
+     VJE=0.4581
+     MJE=0.3092
+     TF=7.073E-10
+     XTF=289.5
+     VTF=6.144
+     ITF=0.1495
+     PTF=0
+     CJC=5.045E-12
+     VJC=0.197
+     MJC=0.1947
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC = 0.8555
.ENDS
**
**********************************************************
*
* BF623
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF623 PNP 
+ IS = 8.912E-15 
+ NF = 0.9978 
+ ISE = 1.62E-15 
+ NE = 1.45 
+ BF = 130 
+ IKF = 0.015 
+ VAF = 165 
+ NR = 0.9979 
+ ISC = 7.8E-13 
+ NC = 1.21 
+ BR = 2.018 
+ IKR = 0.07 
+ VAR = 86 
+ RB = 200 
+ IRB = 8.362E-06 
+ RBM = 0.001 
+ RE = 0.62 
+ RC = 0.255 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.552E-11 
+ VJE = 0.7704 
+ MJE = 0.3878 
+ TF = 1.2E-09 
+ XTF = 9 
+ VTF = 5 
+ ITF = 0.06 
+ PTF = 0 
+ CJC = 8.382E-12 
+ VJC = 0.9588 
+ MJC = 0.5687 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* BF720
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*  
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QBF720 NPN 
+    IS = 1.766E-14 
+    NF = 0.9902 
+    ISE = 1.982E-15 
+    NE = 1.25 
+    BF = 108.1 
+    IKF = 0.21 
+    VAF = 394 
+    NR = 0.99 
+    ISC = 9.5E-10 
+    NC = 1.95 
+    BR = 4.928 
+    IKR = 0.045 
+    VAR = 57 
+    RB = 100 
+    IRB = 2E-05 
+    RBM = 0.01 
+    RE = 0.365 
+    RC = 1.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.181E-11 
+    VJE = 0.6301 
+    MJE = 0.329 
+    TF = 1.303E-09 
+    XTF = 35 
+    VTF = 5 
+    ITF = 0.11 
+    PTF = 0 
+    CJC = 4.632E-12 
+    VJC = 0.2621 
+    MJC = 0.4164 
+    XCJC = 0.4132 
+    TR = 1.9E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.842
.ENDS
**
**********************************************************
*
* BF722
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 100 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QBF722 NPN 
+    IS = 1.766E-14 
+    NF = 0.9902 
+    ISE = 1.982E-15 
+    NE = 1.25 
+    BF = 108.1 
+    IKF = 0.21 
+    VAF = 394 
+    NR = 0.99 
+    ISC = 9.5E-10 
+    NC = 1.95 
+    BR = 4.928 
+    IKR = 0.045 
+    VAR = 57 
+    RB = 100 
+    IRB = 2E-05 
+    RBM = 0.01 
+    RE = 0.365 
+    RC = 1.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.181E-11 
+    VJE = 0.6301 
+    MJE = 0.329 
+    TF = 1.303E-09 
+    XTF = 35 
+    VTF = 5 
+    ITF = 0.11 
+    PTF = 0 
+    CJC = 4.632E-12 
+    VJC = 0.2621 
+    MJC = 0.4164 
+    XCJC = 0.4132 
+    TR = 1.9E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.842
.ENDS
**
**********************************************************
*
* BF723 
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 100 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 29/2006  
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QBF723 PNP 
+ IS = 1.737E-14 
+ NF = 0.9934 
+ ISE = 8.208E-15 
+ NE = 1.559 
+ BF = 141.4 
+ IKF = 0.8 
+ VAF = 350 
+ NR = 0.9755 
+ ISC = 2.097E-10 
+ NC = 1.65 
+ BR = 2.5 
+ IKR = 0.06 
+ VAR = 17 
+ RB = 70 
+ IRB = 5E-05 
+ RBM = 0.3 
+ RE = 0.418 
+ RC = 2.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.916E-11 
+ VJE = 0.7361 
+ MJE = 0.3612 
+ TF = 1.356E-09 
+ XTF = 19 
+ VTF = 9 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 1.071E-11 
+ VJC = 0.726 
+ MJC = 0.5717 
+ XCJC = 0.413 
+ TR = 3.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999
.ENDS
**
**********************************************************
*
* BF820
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF820 NPN 
+     IS=9.109E-15
+     NF=0.9949
+     ISE=5.02E-24
+     NE=2.5
+     BF=141.1
+     IKF=0.009124
+     VAF=22.16
+     NR=0.9917
+     ISC=6.582E-12
+     NC=1.397
+     BR=11.42
+     IKR=0.02146
+     VAR=93
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3288
+     RC=0.5195
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.504E-11
+     VJE=0.7202
+     MJE=0.3499
+     TF=1.26E-09
+     XTF=298.9
+     VTF=2.447
+     ITF=0.1815
+     PTF=0
+     CJC=3.751E-12
+     VJC=0.158
+     MJC=0.2757
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.895
.ENDS
**
**********************************************************
*
* BF820W
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF820W NPN
+     IS=9.109E-15
+     NF=0.9949
+     ISE=5.02E-24
+     NE=2.5
+     BF=141.1
+     IKF=0.009124
+     VAF=22.16
+     NR=0.9917
+     ISC=6.582E-12
+     NC=1.397
+     BR=11.42
+     IKR=0.02146
+     VAR=93
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3288
+     RC=0.5195
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.504E-11
+     VJE=0.7202
+     MJE=0.3499
+     TF=1.26E-09
+     XTF=298.9
+     VTF=2.447
+     ITF=0.1815
+     PTF=0
+     CJC=3.751E-12
+     VJC=0.158
+     MJC=0.2757
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.895
.ENDS
**
**********************************************************
*
* BF821 
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 300 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF821 PNP 
+ IS = 8.912E-15 
+ NF = 0.9978 
+ ISE = 1.62E-15 
+ NE = 1.45 
+ BF = 130 
+ IKF = 0.015 
+ VAF = 165 
+ NR = 0.9979 
+ ISC = 7.8E-13 
+ NC = 1.21 
+ BR = 2.018 
+ IKR = 0.07 
+ VAR = 86 
+ RB = 200 
+ IRB = 8.362E-06 
+ RBM = 0.001 
+ RE = 0.62 
+ RC = 0.255 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.552E-11 
+ VJE = 0.7704 
+ MJE = 0.3878 
+ TF = 1.2E-09 
+ XTF = 9 
+ VTF = 5 
+ ITF = 0.06 
+ PTF = 0 
+ CJC = 8.382E-12 
+ VJC = 0.9588 
+ MJC = 0.5687 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* BF822
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF822 NPN 
+     IS=9.109E-15
+     NF=0.9949
+     ISE=5.02E-24
+     NE=2.5
+     BF=141.1
+     IKF=0.009124
+     VAF=22.16
+     NR=0.9917
+     ISC=6.582E-12
+     NC=1.397
+     BR=11.42
+     IKR=0.02146
+     VAR=93
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.3288
+     RC=0.5195
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.504E-11
+     VJE=0.7202
+     MJE=0.3499
+     TF=1.26E-09
+     XTF=298.9
+     VTF=2.447
+     ITF=0.1815
+     PTF=0
+     CJC=3.751E-12
+     VJC=0.158
+     MJC=0.2757
+     XCJC=0.1041
+     TR=1E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.895
.ENDS
**
**********************************************************
*
* BF823
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 50 mA
* VCEO = 250 V 
* hFE  = min. 50 @ 20V/25mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*   
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF823 PNP 
+ IS = 8.912E-15 
+ NF = 0.9978 
+ ISE = 1.62E-15 
+ NE = 1.45 
+ BF = 130 
+ IKF = 0.015 
+ VAF = 165 
+ NR = 0.9979 
+ ISC = 7.8E-13 
+ NC = 1.21 
+ BR = 2.018 
+ IKR = 0.07 
+ VAR = 86 
+ RB = 200 
+ IRB = 8.362E-06 
+ RBM = 0.001 
+ RE = 0.62 
+ RC = 0.255 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.552E-11 
+ VJE = 0.7704 
+ MJE = 0.3878 
+ TF = 1.2E-09 
+ XTF = 9 
+ VTF = 5 
+ ITF = 0.06 
+ PTF = 0 
+ CJC = 8.382E-12 
+ VJC = 0.9588 
+ MJC = 0.5687 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* BF824
*
* NXP Semiconductors
*
* Medium frequency PNP transistor
* IC   = 25 mA
* VCEO = 30 V 
* hFE  = min.25 typ.45 @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QBF824 PNP 
+     IS = 3.686E-16 
+     NF = 0.9966 
+     ISE = 2.604E-16 
+     NE = 1.263 
+     BF = 48.63 
+     IKF = 0.081 
+     VAF = 69 
+     NR = 1.01 
+     ISC = 9.693E-13 
+     NC = 1.56 
+     BR = 1.682 
+     IKR = 0.1 
+     VAR = 23 
+     RB = 18 
+     IRB = 3E-06 
+     RBM = 2 
+     RE = 0.4232 
+     RC = 1.5 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.99E-12 
+     VJE = 0.7036 
+     MJE = 0.2976 
+     TF = 2.559E-10 
+     XTF = 4.5 
+     VTF = 6 
+     ITF = 0.1 
+     PTF = 0 
+     CJC = 3.103E-12 
+     VJC = 0.4209 
+     MJC = 0.3358 
+     XCJC = 0.0464 
+     TR = 3E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9506
.ENDS
**
**********************************************************
*
* BF824W 
*
* NXP Semiconductors
*
* Medium frequency PNP transistor
* IC   = 25 mA
* VCEO = 30 V 
* hFE  = min. 25 @ 10V/4mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF824W PNP
+     IS=2.948E-16
+     NF=0.99
+     ISE=1.879E-14
+     NE=2.469
+     BF=42
+     IKF=0.05266
+     VAF=35
+     NR=0.9809
+     ISC=2.21E-15
+     NC=1.25
+     BR=1.5
+     IKR=0.05
+     VAR=33.62
+     RB=1
+     IRB=1E-06
+     RBM=0.5
+     RE=0.1038
+     RC=4.2
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.453E-12
+     VJE=0.7113
+     MJE=0.3218
+     TF=2.602E-10
+     XTF=9.349
+     VTF=2.773
+     ITF=0.1748
+     PTF=0
+     CJC=3.237E-12
+     VJC=0.4038
+     MJC=0.3117
+     XCJC=0.0464
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8618
.ENDS
**
**********************************************************
*
* BF840 
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 25 mA
* VCEO = 40 V 
* hFE  = 67 - 222 @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBF840 NPN
+     IS = 4.948E-16 
+     NF = 0.9871 
+     ISE = 1.08E-16 
+     NE = 1.26 
+     BF = 105.8 
+     IKF = 0.08 
+     VAF = 125.5 
+     NR = 0.999 
+     ISC = 2.118E-16 
+     NC = 1 
+     BR = 2.665 
+     IKR = 0.05 
+     VAR = 5.34 
+     RB = 19.38 
+     IRB = 0.0009481 
+     RBM = 2.549 
+     RE = 0.447 
+     RC = 1.9 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 2.171E-12 
+     VJE = 0.5956 
+     MJE = 0.2307 
+     TF = 3.062E-10 
+     XTF = 54.94 
+     VTF = 1.48 
+     ITF = 0.1344 
+     PTF = 0 
+     CJC = 7.61E-13 
+     VJC = 0.3305 
+     MJC = 0.2596 
+     XCJC = 0.811 
+     TR = 5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9221
.ENDS
**
**********************************************************
*
* BFS19 
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 30 mA
* VCEO = 20 V 
* hFE  = 65 - 225 @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBFS19 NPN
+     IS=2.9320E-16
+     NF=0.9869
+     ISE=1.814E-15
+     NE=1.411
+     BF=84.24  
+     IKF=0.1702
+     VAF=130.5
+     NR=0.9848
+     ISC=3.133E-16
+     NC=0.9935
+     BR=2.933
+     IKR=9.000
+     VAR=4.860
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.8047
+     RC=0.9861
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.922E-12  
+     VJE=0.6927
+     MJE=0.3045
+     TF=6.298E-10
+     XTF=113.6
+     VTF=5.391
+     ITF=0.4458
+     PTF=0
+     CJC=1.554E-12
+     VJC=0.3932
+     MJC=0.1891  
+     XCJC=0.1200
+     TR=1.00E-07
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9333
.ENDS
**
**********************************************************
*
* BFS20
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 25 mA
* VCEO = 20 V 
* hFE  = 40 - 85 @ 10V/7mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBFS20 NPN
+     IS=3.4640E-16
+     NF=0.9740
+     ISE=1.00E-15
+     NE=1.508
+     BF=147.8  
+     IKF=0.1343
+     VAF=117.1
+     NR=0.9420
+     ISC=1.231E-15
+     NC=1.148  
+     BR=4.078
+     IKR=0.1809
+     VAR=1.954
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.7337
+     RC=1.1040
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.372E-12  
+     VJE=0.5979
+     MJE=0.170
+     TF=2.089E-10
+     XTF=198.3
+     VTF=1.451  
+     ITF=0.2547
+     PTF=0
+     CJC=0.842E-12
+     VJC=0.5323
+     MJC=0.2749
+     XCJC=0.1500
+     TR=2.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9793 
.ENDS
**
**********************************************************
*
* BFS20W
*
* NXP Semiconductors
*
* Medium frequency NPN transistor
* IC   = 25 mA
* VCEO = 20 V 
* hFE  = min. 25 typ. 85 @ 10V/7mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*   
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QBFS20W NPN
+     IS=3.4640E-16
+     NF=0.9740
+     ISE=1.00E-15
+     NE=1.508
+     BF=147.8  
+     IKF=0.1343
+     VAF=117.1
+     NR=0.9420
+     ISC=1.231E-15
+     NC=1.148  
+     BR=4.078
+     IKR=0.1809
+     VAR=1.954
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.7337
+     RC=1.1040
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=2.372E-12  
+     VJE=0.5979
+     MJE=0.170
+     TF=2.089E-10
+     XTF=198.3
+     VTF=1.451  
+     ITF=0.2547
+     PTF=0
+     CJC=0.842E-12
+     VJC=0.5323
+     MJC=0.2749
+     XCJC=0.1500
+     TR=2.00E-08
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.9793 
.ENDS
**
**********************************************************
*
* BSP19
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 100 mA
* VCEO = 350 V 
* hFE  = min.40 @ 10V/20mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP19 1 2 3 
*
Q1 1 2 3  BSP19
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL  BSP19 NPN 
+ IS = 1.272E-14 
+ NF = 0.9815 
+ ISE = 1.929E-15 
+ NE = 1.278 
+ BF = 115.3 
+ IKF = 0.035 
+ VAF = 80 
+ NR = 0.975 
+ ISC = 1E-16 
+ NC = 4.472 
+ BR = 5.79 
+ IKR = 0.03 
+ VAR = 28 
+ RB = 390 
+ IRB = 2.94E-06 
+ RBM = 0.1 
+ RE = 0.194 
+ RC = 0.81 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.948E-11 
+ VJE = 0.755 
+ MJE = 0.3519 
+ TF = 1.3E-09 
+ XTF = 19 
+ VTF = 5 
+ ITF = 0.08 
+ PTF = 0 
+ CJC = 4.485E-12 
+ VJC = 0.1287 
+ MJC = 0.3746 
+ XCJC = 1 
+ TR = 5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-13 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 621.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP31
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP31 1 2 3 
*
Q1 1 2 3 BSP31
D1 1 2 DIODE
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSP31 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP32
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 40 - 120 @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP32 1 2 3
*
Q1 1 2 3 BSP32
D1 1 2 DIODE
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSP32 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP33
*
* NXP Semiconductors
*
* Medium power PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP33 1 2 3  
*
Q1 1 2 3 BSP33
D1 1 2 DIODE 
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSP33 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP41
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
************************************************************#
.SUBCKT BSP41 1 2 3
*
Q1 1 2 3 BSP41
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL BSP41 NPN 
+ IS = 4.638E-14 
+ NF = 0.9949 
+ ISE = 3.954E-16 
+ NE = 1.25 
+ BF = 145.2 
+ IKF = 0.55 
+ VAF = 91 
+ NR = 0.9994 
+ ISC = 2.3E-10 
+ NC = 1.891 
+ BR = 2.821 
+ IKR = 0.15 
+ VAR = 55 
+ RB = 55 
+ IRB = 2E-06 
+ RBM = 0.4 
+ RE = 0.391 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.404E-11 
+ VJE = 0.7161 
+ MJE = 0.3543 
+ TF = 7.3E-10 
+ XTF = 9 
+ VTF = 5 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 2.79E-11 
+ VJC = 0.5208 
+ MJC = 0.4256 
+ XCJC = 1 
+ TR = 1.2E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 9.8E-11 
+ N = 1.05 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 80 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3
.ENDS
**
**********************************************************
*
* BSP43
*
* NXP Semiconductors
*
* Medium power NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
************************************************************#
.SUBCKT BSP43 1 2 3
*
Q1 1 2 3 BSP43
D1 2 1 DIODE 
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL BSP43 NPN 
+ IS = 4.638E-14 
+ NF = 0.9949 
+ ISE = 3.954E-16 
+ NE = 1.25 
+ BF = 145.2 
+ IKF = 0.55 
+ VAF = 91 
+ NR = 0.9994 
+ ISC = 2.3E-10 
+ NC = 1.891 
+ BR = 2.821 
+ IKR = 0.15 
+ VAR = 55 
+ RB = 55 
+ IRB = 2E-06 
+ RBM = 0.4 
+ RE = 0.391 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.404E-11 
+ VJE = 0.7161 
+ MJE = 0.3543 
+ TF = 7.3E-10 
+ XTF = 9 
+ VTF = 5 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 2.79E-11 
+ VJC = 0.5208 
+ MJC = 0.4256 
+ XCJC = 1 
+ TR = 1.2E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D
+ IS = 9.8E-11 
+ N = 1.05 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 80 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3
.ENDS
**
**********************************************************
*
* BSP50
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP50 1 2 3
* 
Q1 1 2 33 BSP50 1 
Q2 1 33 3 BSP50 3.33 
R1 33 3 118.1 
D1 3 1 DIODE
* 
.MODEL BSP50 NPN 
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3
.ENDS
**
**********************************************************
*
* BSP51
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP51 1 2 3 
* 
Q1 1 2 33 BSP51 1 
Q2 1 33 3 BSP51 3.33 
R1 33 3 118.1 
D1 3 1 DIODE
* 
.MODEL BSP51 NPN 
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP52
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1 A
* VCEO = 90 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP52 1 2 3 
* 
Q1 1 2 33 BSP52 1 
Q2 1 33 3 BSP52 3.33 
R1 33 3 118.1 
D1 3 1 DIODE
* 
.MODEL BSP52 NPN 
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP60
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP60 1 2 3 
* 
Q1 1 2 33 BSP60 1 
Q2 1 33 3 BSP60 3.33 
R1 33 3 50 
D1 1 3 DIODE
* 
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BSP60 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 86 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3
.ENDS
**
**********************************************************
*
* BSP61
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1 A
* VCEO = 80 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP61 1 2 3  
*
Q1 1 2 33 BSP61 1 
Q2 1 33 3 BSP61 3.33 
R1 33 3 50 
D1 1 3  DIODE 
*
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BSP61 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 86 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSP62
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1 A
* VCEO = 90 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSP62 1 2 3 
* 
Q1 1 2 33 BSP62 1 
Q2 1 33 3 BSP62 3.33 
R1 33 3 50 
D1 1 3 DIODE 
*
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BSP62 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 86 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSR14
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 800 mA
* VCEO = 40 V 
* hFE  = 40 - 300 @ 10V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBSR14 NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* BSR16
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 60 V 
* hFE  = 50 - 300 @ 10V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBSR16 PNP
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* BSR19A
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 600 mA
* VCEO = 160 V 
* hFE  = min. 80 @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QBSR19A NPN 
+    IS = 1.663E-14 
+    NF = 0.9956 
+    ISE = 2.072E-15 
+    NE = 1.311 
+    BF = 144.7 
+    IKF = 0.545 
+    VAF = 440.1 
+    NR = 0.985 
+    ISC = 4E-12 
+    NC = 1.4 
+    BR = 2.994 
+    IKR = 0.2 
+    VAR = 30 
+    RB = 20 
+    IRB = 0.0002 
+    RBM = 6 
+    RE = 0.3345 
+    RC = 0.76 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.716E-11 
+    VJE = 0.6743 
+    MJE = 0.3438 
+    TF = 1.026E-09 
+    XTF = 15 
+    VTF = 5 
+    ITF = 0.3 
+    PTF = 0 
+    CJC = 6.422E-12 
+    VJC = 0.4281 
+    MJC = 0.4077 
+    XCJC = 0.595 
+    TR = 3.28E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.8953
.ENDS
**
**********************************************************
*
* BSR30
*
* NXP Semiconductors
*
* Medium power PNP transistorr
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 40 - 120 @ 5V/100 mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSR30 1 2 3
*
Q1 1 2 3 BSR30
D1 1 2 DIODE 
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSR30 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSR31
*
* NXP Semiconductors
*
* Medium power PNP transistorr
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSR31 1 2 3 
*
Q1 1 2 3 BSR31
D1 1 2 DIODE 
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSR31 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSR33
*
* NXP Semiconductors
*
* Medium power PNP transistorr
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSR33 1 2 3 
*
Q1 1 2 3 BSR33
D1 1 2 DIODE
*
* The diode does not reflect
* a physical device. instead it
* improves modeling in the
* reverse mode of operation
*
.MODEL BSR33 PNP 
+ IS = 9.479E-14 
+ NF = 0.9941 
+ ISE = 3.842E-14 
+ NE = 1.45 
+ BF = 159.6 
+ IKF = 1.25 
+ VAF = 60 
+ NR = 0.9918 
+ ISC = 1E-14 
+ NC = 1.3 
+ BR = 14.96 
+ IKR = 0.1 
+ VAR = 22 
+ RB = 13 
+ IRB = 0.0002 
+ RBM = 0.1 
+ RE = 0.1007 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.043E-10 
+ VJE = 0.8422 
+ MJE = 0.4153 
+ TF = 7.2E-10 
+ XTF = 3.2 
+ VTF = 6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.616E-11 
+ VJC = 0.7383 
+ MJC = 0.5119 
+ XCJC = 1 
+ TR = 3.1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.307E-13 
+ N = 1.078 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 243.7 
+ CJO = 1E-15 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 3E-07 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSR41
*
* NXP Semiconductors
*
* Medium power NPN transistorr
* IC   = 1 A
* VCEO = 60 V 
* hFE  = 40 - 120 @ 5V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSR41 1 2 3
* 
Q1 1 2 3 BSR41
D1 2 1 DIODE 
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL BSR41 NPN 
+ IS = 4.638E-14 
+ NF = 0.9949 
+ ISE = 3.954E-16 
+ NE = 1.25 
+ BF = 145.2 
+ IKF = 0.55 
+ VAF = 91 
+ NR = 0.9994 
+ ISC = 2.3E-10 
+ NC = 1.891 
+ BR = 2.821 
+ IKR = 0.15 
+ VAR = 55 
+ RB = 55 
+ IRB = 2E-06 
+ RBM = 0.4 
+ RE = 0.391 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.404E-11 
+ VJE = 0.7161 
+ MJE = 0.3543 
+ TF = 7.3E-10 
+ XTF = 9 
+ VTF = 5 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 2.79E-11 
+ VJC = 0.5208 
+ MJC = 0.4256 
+ XCJC = 1 
+ TR = 1.2E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 9.8E-11 
+ N = 1.05 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 80 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSR43
*
* NXP Semiconductors
*
* Medium power NPN transistorr
* IC   = 1 A
* VCEO = 80 V 
* hFE  = 100 - 300 @ 5V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BSR43 1 2 3 
*
Q1 1 2 3 BSR43
D1 2 1 DIODE 
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL BSR43 NPN 
+ IS = 4.638E-14 
+ NF = 0.9949 
+ ISE = 3.954E-16 
+ NE = 1.25 
+ BF = 145.2 
+ IKF = 0.55 
+ VAF = 91 
+ NR = 0.9994 
+ ISC = 2.3E-10 
+ NC = 1.891 
+ BR = 2.821 
+ IKR = 0.15 
+ VAR = 55 
+ RB = 55 
+ IRB = 2E-06 
+ RBM = 0.4 
+ RE = 0.391 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.404E-11 
+ VJE = 0.7161 
+ MJE = 0.3543 
+ TF = 7.3E-10 
+ XTF = 9 
+ VTF = 5 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 2.79E-11 
+ VJC = 0.5208 
+ MJC = 0.4256 
+ XCJC = 1 
+ TR = 1.2E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 9.8E-11 
+ N = 1.05 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 80 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSS63
*
* NXP Semiconductors
*
* High voltage Transistor NPN
* Ic   = 100 mA
* Vceo =  100  V 
* hFE  =  >30  @ 1 V/10 mA
* 
*  
* 
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 13/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT BSS63 1 2 3
*
Q1 1 2 3 MAIN
D1 1 2 DIODE
*
* The diode is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL MAIN PNP
+ IS = 2.512E-015
+ NF = 0.9605
+ ISE = 4.897E-015
+ NE = 1.474
+ BF = 70
+ IKF = 0.1108
+ VAF = 13.8
+ NR = 0.9538
+ ISC = 3.466E-015
+ NC = 1.07
+ BR = 2.9
+ IKR = 0.7624
+ VAR = 81
+ RB = 102
+ IRB = 0.00015
+ RBM = 2.7
+ RE = 0.3979
+ RC = 0.2796
+ XTB = 0
+ EG = 1.11
+ XTI = 1
+ CJE = 2.032E-011
+ VJE = 0.7567
+ MJE = 0.36
+ TF = 1.6E-009
+ XTF = 20
+ VTF = 20
+ ITF = 0.52
+ PTF = 0
+ CJC = 8.862E-012
+ VJC = 0.9825
+ MJC = 0.5294
+ XCJC = 1
+ TR = 2.35E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7
.MODEL DIODE D
+ IS = 2.018E-015
+ N = 0.985
+ BV = 1000
+ IBV = 0.001
+ RS = 3423
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* BSS64
*
* NXP Semiconductors
*
* High voltage Transistor NPN
* Ic   = 100 mA
* Vceo =  80  V 
* hFE  =  80 @ 1 V/10 mA (typical)
* 
*  
* 
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 13/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT BSS64 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
..MODEL MAIN NPN
+ IS = 4.074E-015
+ NF = 0.9872
+ ISE = 7.657E-016
+ NE = 1.354
+ BF = 76
+ IKF = 0.06306
+ VAF = 31.33
+ NR = 0.9838
+ ISC = 1.003E-015
+ NC = 0.9862
+ BR = 6.521
+ IKR = 0.008696
+ VAR = 55
+ RB = 130
+ IRB = 0.00025
+ RBM = 1.31
+ RE = 0.7955
+ RC = 0.3481
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.889E-011
+ VJE = 0.6788
+ MJE = 0.3095
+ TF = 9.409E-010
+ XTF = 25
+ VTF = 1.016
+ ITF = 0.152
+ PTF = 0
+ CJC = 6.303E-012
+ VJC = 0.4792
+ MJC = 0.3354
+ XCJC = 1
+ TR = 5.95E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 6.568E-015
+ N = 0.9981
+ BV = 1000
+ IBV = 0.001
+ RS = 505.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* BST39
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 100 mA
* VCEO = 350 V 
* hFE  = min. 40 @ 10V/20mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST39 1 2 3
*
Q1 1 2 3 BST39
D1 2 1 DIODE 
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL BST39 NPN 
+ IS = 1.272E-14 
+ NF = 0.9815 
+ ISE = 1.929E-15 
+ NE = 1.278 
+ BF = 115.3 
+ IKF = 0.035 
+ VAF = 80 
+ NR = 0.975 
+ ISC = 1E-16 
+ NC = 4.472 
+ BR = 5.79 
+ IKR = 0.03 
+ VAR = 28 
+ RB = 390 
+ IRB = 2.94E-06 
+ RBM = 0.1 
+ RE = 0.194 
+ RC = 0.81 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.948E-11 
+ VJE = 0.755 
+ MJE = 0.3519 
+ TF = 1.3E-09 
+ XTF = 19 
+ VTF = 5 
+ ITF = 0.08 
+ PTF = 0 
+ CJC = 4.485E-12 
+ VJC = 0.1287 
+ MJC = 0.3746 
+ XCJC = 1 
+ TR = 5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-13 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 621.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST50
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*  
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST50 1 2 3 
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST50 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST50 3.33
* 
Q1 1 2 33 BST50 1 
Q2 1 33 3 BST50 3.33 
R1 3 33 118.1 
D1 3 1 DIODE
* 
.MODEL BST50 NPN
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST51
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST51 1 2 3 
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST51 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST51 3.33 
*
Q1 1 2 33 BST51 1 
Q2 1 33 3 BST51 3.33 
R1 3 33 118.1 
D1 3 1 DIODE
* 
.MODEL BST51 NPN 
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST52
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 1  A
* VCEO = 90 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST52 1 2 3
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST52 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST52 3.33
* 
Q1 1 2 33 BST52 1 
Q2 1 33 3 BST52 3.33 
R1 3 33 118.1 
D1 3 1 DIODE
* 
.MODEL BST52 NPN 
+ IS = 6.501E-15 
+ NF = 0.9913 
+ ISE = 1.113E-14 
+ NE = 2.5 
+ BF = 102.4 
+ IKF = 0.169 
+ VAF = 275.3 
+ NR = 1.163 
+ ISC = 6.246E-15 
+ NC = 1.042 
+ BR = 19.35 
+ IKR = 1000 
+ VAR = 20 
+ RB = 30.9 
+ IRB = 0.0002 
+ RBM = 2 
+ RE = 0.3 
+ RC = 3.583 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.63E-11 
+ VJE = 0.79 
+ MJE = 0.2652 
+ TF = 1.009E-09 
+ XTF = 252.1 
+ VTF = 6.4 
+ ITF = 2.99 
+ PTF = 0 
+ CJC = 7.9E-12 
+ VJC = 0.49 
+ MJC = 0.6503 
+ XCJC = 0.5 
+ TR = 9E-06 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 2.833E-14 
+ N = 0.9881 
+ BV = 100 
+ IBV = 1.5E-08 
+ RS = 50 
+ CJO = 4.9E-12 
+ VJ = 0.4709 
+ M = 0.15 
+ FC = 0.89 
+ TT = 1E-12 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST60
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1  A
* VCEO = 60 V 
* hFE  = 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST60 1 2 3 
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST60 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST60 3.33 
*
Q1 1 2 33 BST60 1 
Q2 1 33 3 BST60 3.33 
R1 3 33 50 
D1 1 3 DIODE
* 
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BST60 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 100 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST61
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1  A
* VCEO = 80 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST61 1 2 3
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST61 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST61 3.33
* 
Q1 1 2 33 BST61 1 
Q2 1 33 3 BST61 3.33 
R1 3 33 50 
D1 1 3 DIODE
* 
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BST61 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 100 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BST62
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 1  A
* VCEO = 90 V 
* hFE  = min. 2000 @ 10V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT BST62 1 2 3 
*
* For use with Microsim PSPICE please
* modify the AREA statement in this 
* model:  e.g.
* SPICE: 
* Q2 1 22 3 BST62 AREA = 3.33 
* PSPICE:
* Q2 1 22 3 BST62 3.33
* 
Q1 1 2 33 BST62 1 
Q2 1 33 3 BST62 3.33 
R1 3 33 50 
D1 1 3 DIODE
* 
* For simulation of large signal
* switching please edit
* the model and replace 
* R1 = 50  by  R1 = 100
*
.MODEL BST62 PNP 
+ IS = 1.001E-14 
+ NF = 0.976 
+ ISE = 1E-15 
+ NE = 2.332 
+ BF = 172.5 
+ IKF = 0.4163 
+ VAF = 70 
+ NR = 0.9748 
+ ISC = 1.782E-15 
+ NC = 1.06 
+ BR = 10.12 
+ IKR = 0.005 
+ VAR = 10 
+ RB = 77.4 
+ IRB = 2.05E-05 
+ RBM = 0.001 
+ RE = 0.3607 
+ RC = 3.399 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.4E-11 
+ VJE = 0.7005 
+ MJE = 0.3739 
+ TF = 1E-09 
+ XTF = 2 
+ VTF = 5 
+ ITF = 5 
+ PTF = 0 
+ CJC = 9.199E-12 
+ VJC = 0.446 
+ MJC = 0.3962 
+ XCJC = 1 
+ TR = 9E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78
.MODEL DIODE D 
+ IS = 1E-18 
+ N = 0.6777 
+ BV = 100 
+ IBV = 1E-09 
+ RS = 8 
+ CJO = 5E-14 
+ VJ = 0.446 
+ M = 0.396 
+ FC = 0.5 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* BSV52
*
* NXP Semiconductors
*
* Switching transistor NPN
* IC   = 100  mA
* VCEO = 12 V 
* hFE  = 40 - 120 @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*# 
.MODEL QBSV52 NPN 
+ IS = 1.751E-15 
+ NF = 0.998 
+ ISE = 3.503E-16 
+ NE = 1.148 
+ BF = 121.3 
+ IKF = 0.17 
+ VAF = 57 
+ NR = 0.988 
+ ISC = 7.44E-11 
+ NC = 1.55 
+ BR = 0.3812 
+ IKR = 0.05 
+ VAR = 17 
+ RB = 35 
+ IRB = 0.0002423 
+ RBM = 0.05 
+ RE = 0.729 
+ RC = 1.01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.807E-12 
+ VJE = 0.55 
+ MJE = 0.3135 
+ TF = 2.073E-10 
+ XTF = 1 
+ VTF = 11 
+ ITF = 0.17 
+ PTF = 0 
+ CJC = 1.889E-12 
+ VJC = 0.8844 
+ MJC = 0.3014 
+ XCJC = 1 
+ TR = 5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8517
.ENDS
**
**********************************************************
*
* MMBT2222A
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 40 @ 10V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QMMBT2222A NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3
.ENDS
**
**********************************************************
*
* MMBT3904
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300 @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QMMBT3904 NPN
+     IS=4.639E-15
+     NF=0.9995
+     ISE=2.091E-14
+     NE=1.6
+     BF=160.1  
+     IKF=0.12
+     VAF=98.69
+     NR=1.001
+     ISC=3.257E-12
+     NC=1.394  
+     BR=5.944
+     IKR=0.06
+     VAR=19.29
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.3614
+     RC=1.755
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=5.631E-12  
+     VJE=0.7002
+     MJE=0.3385
+     TF=3.001E-10
+     XTF=27
+     VTF=1.461  
+     ITF=0.2723
+     PTF=0
+     CJC=4.949E-12
+     VJC=0.5969
+     MJC=0.1928  
+     XCJC=0.864
+     TR=9.4E-8
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5582
.ENDS
**
**********************************************************
*
* MMBT3906
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300 @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QMMBT3906 PNP 
+     IS=9.273E-15
+     NF=1.012
+     ISE=1.01E-13
+     NE=1.6
+     BF=153.6  
+     IKF=0.09
+     VAF=30.8
+     NR=0.9988
+     ISC=1.117E-12
+     NC=1.43  
+     BR=6.25
+     IKR=0.09
+     VAR=10.97
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.1244
+     RC=1.375
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=7.897E-12  
+     VJE=0.69
+     MJE=0.3628
+     TF=5.9E-10
+     XTF=2.5
+     VTF=3.8  
+     ITF=0.07
+     PTF=0
+     CJC=6.755E-12
+     VJC=0.37
+     MJC=0.2096 
+     XCJC=0.864
+     TR=4.7E-8
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5 
.ENDS
**
**********************************************************
*
* MMBTA42
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 100  mA
* VCEO = 300 V 
* hFE  = min. 40 @ 10V/30mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.MODEL QMMBTA42 NPN
+    IS = 1.766E-14 
+    NF = 0.9902 
+    ISE = 1.982E-15 
+    NE = 1.25 
+    BF = 108.1 
+    IKF = 0.21 
+    VAF = 394 
+    NR = 0.99 
+    ISC = 9.5E-10 
+    NC = 1.95 
+    BR = 4.928 
+    IKR = 0.045 
+    VAR = 57 
+    RB = 100 
+    IRB = 2E-05 
+    RBM = 0.01 
+    RE = 0.365 
+    RC = 1.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.181E-11 
+    VJE = 0.6301 
+    MJE = 0.329 
+    TF = 1.303E-09 
+    XTF = 35 
+    VTF = 5 
+    ITF = 0.11 
+    PTF = 0 
+    CJC = 4.632E-12 
+    VJC = 0.2621 
+    MJC = 0.4164 
+    XCJC = 0.4132 
+    TR = 1.9E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.842
.ENDS
**
**********************************************************
*
* MMBTA92
*
* NXP Semiconductors
*
* High voltage PNP transistor
* IC   = 100  mA
* VCEO = 300 V 
* hFE  = min. 40 @ 10V/30 mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*   
* Simulator: Spice 2
*
***********************************************************
*#
.MODEL QMMBTA92 PNP 
+    IS = 1.737E-14 
+    NF = 0.9934 
+    ISE = 8.208E-15 
+    NE = 1.559 
+    BF = 141.4 
+    IKF = 0.8 
+    VAF = 350 
+    NR = 0.9755 
+    ISC = 2.097E-10 
+    NC = 1.65 
+    BR = 2.5 
+    IKR = 0.06 
+    VAR = 17 
+    RB = 70 
+    IRB = 5E-05 
+    RBM = 0.3 
+    RE = 0.418 
+    RC = 2.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.916E-11 
+    VJE = 0.7361 
+    MJE = 0.3612 
+    TF = 1.356E-09 
+    XTF = 19 
+    VTF = 9 
+    ITF = 0.2 
+    PTF = 0 
+    CJC = 1.071E-11 
+    VJC = 0.726 
+    MJC = 0.5717 
+    XCJC = 0.413 
+    TR = 3.3E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999 
.ENDS
**
**********************************************************
*
* MPSA44
*
* NXP Semiconductors
*
* High voltage NPN transistor
* IC   = 300  mA
* VCEO = 400 V 
* hFE  = 50 - 200 @ 10V/10mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Collector
* Package Pin 2: Base
* Package Pin 3: Emitter
*
*
* Extraction date (week/year): 26/2006  
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT MPSA44 1 2 3
*
Q1 1 2 3 MPSA44
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL MPSA44 NPN
+ IS = 3.681E-014 
+ NF = 0.9863 
+ ISE = 1.09E-015 
+ NE = 1.106 
+ BF = 88 
+ IKF = 0.038 
+ VAF = 20 
+ NR = 0.991 
+ ISC = 1.413E-015 
+ NC = 2.58 
+ BR = 6.026 
+ IKR = 1.5 
+ VAR = 122 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 0.7535 
+ RE = 0.1 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.989E-010 
+ VJE = 0.55 
+ MJE = 0.2987 
+ TF = 4.13E-009 
+ XTF = 3 
+ VTF = 1.5 
+ ITF = 0.1 
+ PTF = 0 
+ CJC = 1.778E-011 
+ VJC = 0.2964 
+ MJC = 0.3355 
+ XCJC = 1 
+ TR = 2E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 2.312E-013 
+ N = 1.01 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 280.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* MPSA56
*
* NXP Semiconductors
*
* General purpose PNP Transistor
* IC   = 500 mA
* VCEO = 80 V 
* hFE  = min. 100 @ 10V/100mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Collector
* Package Pin 2: Base
* Package Pin 3: Emitter
*
*
* Extraction date (week/year): 30/2003    
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QMPSA56 PNP 
+ IS = 6.777E-014 
+ NF = 0.9854 
+ ISE = 5.689E-015 
+ NE = 1.277 
+ BF = 206 
+ IKF = 0.175 
+ VAF = 38 
+ NR = 0.9884 
+ ISC = 1.394E-013 
+ NC = 1.145 
+ BR = 11 
+ IKR = 0.22 
+ VAR = 21 
+ RB = 16 
+ IRB = 0.0004 
+ RBM = 0.763 
+ RE = 0.085 
+ RC = 0.27 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.014E-011 
+ VJE = 0.7796 
+ MJE = 0.4005 
+ TF = 9E-010 
+ XTF = 10 
+ VTF = 0.5 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 2.439E-011 
+ VJC = 0.6416 
+ MJC = 0.4655 
+ XCJC = 1 
+ TR = 9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* MPSA92
*
* NXP Semiconductors
*
* High voltage PNP Transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 40 @ 10V/10mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Collector
* Package Pin 2: Base
* Package Pin 3: Emitter
*
*
* Extraction date (week/year): 30/2006    
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QMPSA92 PNP 
+ IS = 1.737E-14 
+ NF = 0.9934 
+ ISE = 8.208E-15 
+ NE = 1.559 
+ BF = 141.4 
+ IKF = 0.8 
+ VAF = 350 
+ NR = 0.9755 
+ ISC = 2.097E-10 
+ NC = 1.65 
+ BR = 2.5 
+ IKR = 0.06 
+ VAR = 17 
+ RB = 70 
+ IRB = 5E-05 
+ RBM = 0.3 
+ RE = 0.418 
+ RC = 2.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.916E-11 
+ VJE = 0.7361 
+ MJE = 0.3612 
+ TF = 1.356E-09 
+ XTF = 19 
+ VTF = 9 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 1.071E-11 
+ VJC = 0.726 
+ MJC = 0.5717 
+ XCJC = 0.413 
+ TR = 3.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999
.ENDS
**
**********************************************************
*
* PBHV8115T
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 1  A
* VCEO = 150 V 
* hFE  = min. 100 typ. 250 @ 10V/50mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 49/2007    
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8115T 1 2 3
*
Q1 1 2 3 PBHV8115T
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8115T NPN 
+ IS = 2.104E-013 
+ NF = 0.975 
+ ISE = 3.177E-014 
+ NE = 1.52 
+ BF = 308 
+ IKF = 0.052 
+ VAF = 5 
+ NR = 0.977 
+ ISC = 4.535E-014 
+ NC = 1.217 
+ BR = 34.7 
+ IKR = 0.9 
+ VAR = 26 
+ RB = 19 
+ IRB = 0.00037 
+ RBM = 2.2 
+ RE = 0.03379 
+ RC = 0.05563 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.784E-010 
+ VJE = 0.679 
+ MJE = 0.3426 
+ TF = 1.5E-009 
+ XTF = 40 
+ VTF = 5 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 2.407E-011 
+ VJC = 0.1792 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.56E-014 
+ N = 0.9573 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1027 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8115X
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 1  A
* VCEO = 150 V 
* hFE  = min. 100 typ. 250 @ 10V/50mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* Package Pin 4: Collector
*
* Extraction date (week/year): 49/2007    
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8115X 1 2 3
*
Q1 1 2 3 PBHV8115X
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8115X NPN 
+ IS = 2.104E-013 
+ NF = 0.975 
+ ISE = 3.177E-014 
+ NE = 1.52 
+ BF = 308 
+ IKF = 0.052 
+ VAF = 5 
+ NR = 0.977 
+ ISC = 4.535E-014 
+ NC = 1.217 
+ BR = 34.7 
+ IKR = 0.9 
+ VAR = 26 
+ RB = 19 
+ IRB = 0.00037 
+ RBM = 2.2 
+ RE = 0.03379 
+ RC = 0.05563 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.784E-010 
+ VJE = 0.679 
+ MJE = 0.3426 
+ TF = 1.5E-009 
+ XTF = 40 
+ VTF = 5 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 2.407E-011 
+ VJC = 0.1792 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.56E-014 
+ N = 0.9573 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1027 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8115Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 1  A
* VCEO = 150 V 
* hFE  = min. 100 typ. 250 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 49/2007 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8115Z 1 2 3
+
Q1 1 2 3 PBHV8115Z
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8115Z NPN 
+ IS = 2.104E-013 
+ NF = 0.975 
+ ISE = 3.177E-014 
+ NE = 1.52 
+ BF = 308 
+ IKF = 0.052 
+ VAF = 5 
+ NR = 0.977 
+ ISC = 4.535E-014 
+ NC = 1.217 
+ BR = 34.7 
+ IKR = 0.9 
+ VAR = 26 
+ RB = 19 
+ IRB = 0.00037 
+ RBM = 2.2 
+ RE = 0.03379 
+ RC = 0.05563 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.784E-010 
+ VJE = 0.679 
+ MJE = 0.3426 
+ TF = 1.5E-009 
+ XTF = 40 
+ VTF = 5 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 2.407E-011 
+ VJC = 0.1792 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.56E-014 
+ N = 0.9573 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1027 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8118T
*
* NXP Semiconductors
*
* High voltage BISS-Transistor NPN
* Ic   = 1 A
* Vceo = 180  V 
* hFE  = 250 @ 10V/50 mA (typical)
* 
*  
* 
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 25/2011  
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBHV8118T NPN
+ IS = 1.294E-013
+ NF = 0.9616
+ ISE = 1.809E-014
+ NE = 1.641
+ BF = 249.9
+ IKF = 0.06665
+ VAF = 15.31
+ NR = 0.9646
+ ISC = 4.535E-014
+ NC = 1.217
+ BR = 28.41
+ IKR = 1.493
+ VAR = 68.29
+ RB = 19
+ IRB = 0.00037
+ RBM = 2.2
+ RE = 0.04652
+ RC = 0.05903
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.784E-010
+ VJE = 0.679
+ MJE = 0.3426
+ TF = 1.5E-009
+ XTF = 40
+ VTF = 5
+ ITF = 1.7
+ PTF = 0
+ CJC = 2.407E-011
+ VJC = 0.1792
+ MJC = 0.3
+ XCJC = 1
+ TR = 2E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.79
.ENDS
**
**********************************************************
*
* PBHV8140Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 1  A
* VCEO = 400 V 
* hFE  = min. 100 typ. 155 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 32/2009 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8140Z 1 2 3
*
Q1 1 2 3 PBHV8140Z
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8140Z NPN 
+ IS = 4.462E-013 
+ NF = 0.9921 
+ ISE = 3.216E-014 
+ NE = 1.376 
+ BF = 150 
+ IKF = 0.08 
+ VAF = 22 
+ NR = 0.9956 
+ ISC = 3.281E-013 
+ NC = 1.217 
+ BR = 18 
+ IKR = 1.15 
+ VAR = 65 
+ RB = 5.5 
+ IRB = 0.00045 
+ RBM = 0.91 
+ RE = 0.02888 
+ RC = 0.041 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.016E-010 
+ VJE = 0.6774 
+ MJE = 0.3313 
+ TF = 8E-010 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.1 
+ PTF = 0 
+ CJC = 5.387E-011 
+ VJC = 0.3496 
+ MJC = 0.3854 
+ XCJC = 1 
+ TR = 4E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.462E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 369.8 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8215Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 2 A
* VCEO = 150 V 
* hFE  = 100 - 250 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 34/2009 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8215Z 1 2 3
*
Q1 1 2 3 PBHV8215Z
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8215Z NPN 
+ IS = 8.33E-013 
+ NF = 0.9923 
+ ISE = 1.587E-014 
+ NE = 1.407 
+ BF = 256.4 
+ IKF = 0.38 
+ VAF = 5.7 
+ NR = 0.9929 
+ ISC = 5.464E-014 
+ NC = 1.217 
+ BR = 55.31 
+ IKR = 2 
+ VAR = 75 
+ RB = 5.3 
+ IRB = 0.00105 
+ RBM = 1.12 
+ RE = 0.03768 
+ RC = 0.02356 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.166E-010 
+ VJE = 0.6711 
+ MJE = 0.3415 
+ TF = 1.25E-009 
+ XTF = 70 
+ VTF = 30 
+ ITF = 2 
+ PTF = 0 
+ CJC = 7.777E-011 
+ VJC = 0.4732 
+ MJC = 0.4065 
+ XCJC = 1 
+ TR = 5.7E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 5.797E-014 
+ N = 1.012 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 330.7 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8540T
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 0,5 A
* VCEO = 400 V 
* hFE  = min. 100 @ 10V/50mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 49/2007 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8540T 1 2 3
*
Q1 1 2 3 PBHV8540T
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
* 
.MODEL PBHV8540T NPN 
+ IS = 1.072E-013 
+ NF = 0.9779 
+ ISE = 1.792E-015 
+ NE = 1.102 
+ BF = 210 
+ IKF = 0.014 
+ VAF = 10.57 
+ NR = 0.9929 
+ ISC = 1.882E-013 
+ NC = 1.134 
+ BR = 45 
+ IKR = 0.4 
+ VAR = 20 
+ RB = 129.8 
+ IRB = 0.0002 
+ RBM = 2.229 
+ RE = 0.045 
+ RC = 0.06559 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.968E-010 
+ VJE = 0.6498 
+ MJE = 0.3228 
+ TF = 2.2E-009 
+ XTF = 420 
+ VTF = 30 
+ ITF = 2 
+ PTF = 0 
+ CJC = 1.764E-011 
+ VJC = 0.1659 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.957E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 97.95 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8540X
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 0,5 A
* VCEO = 400 V 
* hFE  = min. 100 @ 10V/50mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* Package Pin 4: Collector
*
* Extraction date (week/year): 49/2007 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8540X 1 2 3
*
Q1 1 2 3 PBHV8540X
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV8540X NPN 
+ IS = 1.072E-013 
+ NF = 0.9779 
+ ISE = 1.792E-015 
+ NE = 1.102 
+ BF = 210 
+ IKF = 0.014 
+ VAF = 10.57 
+ NR = 0.9929 
+ ISC = 1.882E-013 
+ NC = 1.134 
+ BR = 45 
+ IKR = 0.4 
+ VAR = 20 
+ RB = 129.8 
+ IRB = 0.0002 
+ RBM = 2.229 
+ RE = 0.045 
+ RC = 0.06559 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.968E-010 
+ VJE = 0.6498 
+ MJE = 0.3228 
+ TF = 2.2E-009 
+ XTF = 420 
+ VTF = 30 
+ ITF = 2 
+ PTF = 0 
+ CJC = 1.764E-011 
+ VJC = 0.1659 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.957E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 97.95 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV8540Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor NPN
* IC   = 0,5 A
* VCEO = 400 V 
* hFE  = min. 100 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2009 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV8540Z 1 2 3
*
Q1 1 2 3 PBHV8540Z
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
* housing parasitics
*
.MODEL PBHV8540Z NPN 
+ IS = 1.072E-013 
+ NF = 0.9779 
+ ISE = 1.792E-015 
+ NE = 1.102 
+ BF = 210 
+ IKF = 0.014 
+ VAF = 10.57 
+ NR = 0.9929 
+ ISC = 1.882E-013 
+ NC = 1.134 
+ BR = 45 
+ IKR = 0.4 
+ VAR = 20 
+ RB = 129.8 
+ IRB = 0.0002 
+ RBM = 2.229 
+ RE = 0.045 
+ RC = 0.06559 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.968E-010 
+ VJE = 0.6498 
+ MJE = 0.3228 
+ TF = 2.2E-009 
+ XTF = 420 
+ VTF = 30 
+ ITF = 2 
+ PTF = 0 
+ CJC = 1.764E-011 
+ VJC = 0.1659 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.957E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 97.95 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV9040T
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 0,25 A
* VCEO = 400 V 
* hFE  = min. 100 typ. 200 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009 
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBHV9040T PNP 
+ IS = 2.884E-013 
+ NF = 1 
+ ISE = 9.5E-015 
+ NE = 1.15 
+ BF = 483.3 
+ IKF = 0.004232 
+ VAF = 11.55 
+ NR = 1 
+ ISC = 2.271E-012 
+ NC = 1.22 
+ BR = 50 
+ IKR = 0.04402 
+ VAR = 25 
+ RB = 31.96 
+ IRB = 0.0002596 
+ RBM = 0.32 
+ RE = 0.103 
+ RC = 0.249 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.801E-010 
+ VJE = 0.7633 
+ MJE = 0.3913 
+ TF = 1.6E-009 
+ XTF = 300 
+ VTF = 5 
+ ITF = 2.7 
+ PTF = 0 
+ CJC = 3.619E-011 
+ VJC = 0.102 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.ENDS
**
**********************************************************
*
* PBHV9040X
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 0,25 A
* VCEO = 400 V 
* hFE  = min. 100 typ. 200 @ 10V/50mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* Package Pin 4: Collector
*
* Extraction date (week/year): 49/2007 
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBHV9040X PNP 
+ IS = 2.884E-013 
+ NF = 1 
+ ISE = 9.5E-015 
+ NE = 1.15 
+ BF = 483.3 
+ IKF = 0.004232 
+ VAF = 11.55 
+ NR = 1 
+ ISC = 2.271E-012 
+ NC = 1.22 
+ BR = 50 
+ IKR = 0.04402 
+ VAR = 25 
+ RB = 31.96 
+ IRB = 0.0002596 
+ RBM = 0.32 
+ RE = 0.103 
+ RC = 0.249 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.801E-010 
+ VJE = 0.7633 
+ MJE = 0.3913 
+ TF = 1.6E-009 
+ XTF = 300 
+ VTF = 5 
+ ITF = 2.7 
+ PTF = 0 
+ CJC = 3.619E-011 
+ VJC = 0.102 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.ENDS
**
**********************************************************
*
* PBHV9040Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 0,25 A
* VCEO = 400 V 
* hFE  = min. 100 typ. 200 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2009 
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBHV9040Z PNP 
+ IS = 2.884E-013 
+ NF = 1 
+ ISE = 9.5E-015 
+ NE = 1.15 
+ BF = 483.3 
+ IKF = 0.004232 
+ VAF = 11.55 
+ NR = 1 
+ ISC = 2.271E-012 
+ NC = 1.22 
+ BR = 50 
+ IKR = 0.04402 
+ VAR = 25 
+ RB = 31.96 
+ IRB = 0.0002596 
+ RBM = 0.32 
+ RE = 0.103 
+ RC = 0.249 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.801E-010 
+ VJE = 0.7633 
+ MJE = 0.3913 
+ TF = 1.6E-009 
+ XTF = 300 
+ VTF = 5 
+ ITF = 2.7 
+ PTF = 0 
+ CJC = 3.619E-011 
+ VJC = 0.102 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.ENDS
**
**********************************************************
*
* PBHV9050T
*
* NXP Semiconductors
*
* High voltage BISS-Transistor PNP
* Ic   = 0,5 A
* Vceo = 500  V 
* hFE  = 160 @ 10V/50mA (typical)
* 
*  
* 
* Package: SOT 23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 30/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBHV9050T 1 2 3
Q1 1 2 3 MAIN
D1 1 2 DIODE
.MODEL MAIN PNP
+ IS = 8.167E-014
+ NF = 0.9707
+ ISE = 3.986E-014
+ NE = 1.399
+ BF = 158
+ IKF = 0.007
+ VAF = 8
+ NR = 0.965
+ ISC = 1.307E-012
+ NC = 1.143
+ BR = 11
+ IKR = 0.5
+ VAR = 81
+ RB = 12.3
+ IRB = 0.000232
+ RBM = 1.45
+ RE = 0.137
+ RC = 0.341
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.993E-010
+ VJE = 0.749
+ MJE = 0.3789
+ TF = 1.1E-009
+ XTF = 30
+ VTF = 20
+ ITF = 1.5
+ PTF = 0
+ CJC = 3.453E-011
+ VJC = 0.5
+ MJC = 0.4589
+ XCJC = 1
+ TR = 8E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.6
.MODEL DIODE D
+ IS = 1.111E-014
+ N = 0.7473
+ BV = 1000
+ IBV = 0.001
+ RS = 1254
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PBHV9050Z
*
* NXP Semiconductors
*
* High voltage BISS-Transistor PNP
* Ic   = 0,25 A
* Vceo = 500  V 
* hFE  = 160 @ 10V/50mA (typical)
* 
*  
* 
* Package: SOT 223
*
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 30/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBHV9050Z 1 2 3
Q1 1 2 3 MAIN
D1 1 2 DIODE
.MODEL MAIN PNP
+ IS = 8.167E-014
+ NF = 0.9707
+ ISE = 3.986E-014
+ NE = 1.399
+ BF = 158
+ IKF = 0.007
+ VAF = 8
+ NR = 0.965
+ ISC = 1.307E-012
+ NC = 1.143
+ BR = 11
+ IKR = 0.5
+ VAR = 81
+ RB = 12.3
+ IRB = 0.000232
+ RBM = 1.45
+ RE = 0.137
+ RC = 0.341
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.993E-010
+ VJE = 0.749
+ MJE = 0.3789
+ TF = 1.1E-009
+ XTF = 30
+ VTF = 20
+ ITF = 1.5
+ PTF = 0
+ CJC = 3.453E-011
+ VJC = 0.5
+ MJC = 0.4589
+ XCJC = 1
+ TR = 8E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.6
.MODEL DIODE D
+ IS = 1.111E-014
+ N = 0.7473
+ BV = 1000
+ IBV = 0.001
+ RS = 1254
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PBHV9115T
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 1 A
* VCEO = 150 V 
* hFE  = min. 100 typ. 220 @ 10V/50mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 25/2011  
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBHV9115T PNP
+ IS = 9.036E-014
+ NF = 0.9292
+ ISE = 9.099E-015
+ NE = 1.173
+ BF = 270
+ IKF = 0.04
+ VAF = 5
+ NR = 0.9327
+ ISC = 4.6E-014
+ NC = 1.194
+ BR = 12
+ IKR = 1.3
+ VAR = 26
+ RB = 19
+ IRB = 0.005
+ RBM = 0.7207
+ RE = 0.01092
+ RC = 0.05903
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.794E-010
+ VJE = 0.7684
+ MJE = 0.3928
+ TF = 1.4E-009
+ XTF = 80
+ VTF = 2
+ ITF = 2.4
+ PTF = 0
+ CJC = 5.058E-011
+ VJC = 0.1206
+ MJC = 0.3
+ XCJC = 1
+ TR = 2E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.79
.ENDS
**
**********************************************************
*
* PBHV9115X
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 1 A
* VCEO = 150 V 
* hFE  = min. 100 typ. 220 @ 10V/50mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV9115X 1 2 3
*
Q1 1 2 3 PBHV9115X
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV9115X PNP 
+ IS = 1.69E-013 
+ NF = 0.9862 
+ ISE = 5.503E-015 
+ NE = 1.2 
+ BF = 270 
+ IKF = 0.04 
+ VAF = 5 
+ NR = 0.996 
+ ISC = 4.6E-014 
+ NC = 1.194 
+ BR = 12 
+ IKR = 1.3 
+ VAR = 26 
+ RB = 19 
+ IRB = 0.005 
+ RBM = 0.7207 
+ RE = 0.05 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.794E-010 
+ VJE = 0.7684 
+ MJE = 0.3928 
+ TF = 1.4E-009 
+ XTF = 80 
+ VTF = 2 
+ ITF = 2.4 
+ PTF = 0 
+ CJC = 5.058E-011 
+ VJC = 0.1206 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.645E-013 
+ N = 0.9725 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 938.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV9115Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 1 A
* VCEO = 150 V 
* hFE  = min. 100 typ. 220 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV9115Z 1 2 3
*
Q1 1 2 3 PBHV9115Z
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV9115Z PNP 
+ IS = 1.69E-013 
+ NF = 0.9862 
+ ISE = 5.503E-015 
+ NE = 1.2 
+ BF = 270 
+ IKF = 0.04 
+ VAF = 5 
+ NR = 0.996 
+ ISC = 4.6E-014 
+ NC = 1.194 
+ BR = 12 
+ IKR = 1.3 
+ VAR = 26 
+ RB = 19 
+ IRB = 0.005 
+ RBM = 0.7207 
+ RE = 0.05 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.794E-010 
+ VJE = 0.7684 
+ MJE = 0.3928 
+ TF = 1.4E-009 
+ XTF = 80 
+ VTF = 2 
+ ITF = 2.4 
+ PTF = 0 
+ CJC = 5.058E-011 
+ VJC = 0.1206 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.645E-013 
+ N = 0.9725 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 938.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV9215Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 2 A
* VCEO = 150 V 
* hFE  = min. 100 typ. 180 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 34/2009
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV9215Z 1 2 3
*
Q1 1 2 3 PBHV9215Z
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV9215Z PNP 
+ IS = 3.757E-013 
+ NF = 0.9855 
+ ISE = 6.028E-014 
+ NE = 1.443 
+ BF = 173 
+ IKF = 0.23 
+ VAF = 5.7 
+ NR = 0.9859 
+ ISC = 1.835E-013 
+ NC = 1.248 
+ BR = 21.78 
+ IKR = 0.78 
+ VAR = 76 
+ RB = 10 
+ IRB = 4.4E-005 
+ RBM = 1.07 
+ RE = 0.03189 
+ RC = 0.01839 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.404E-010 
+ VJE = 0.7514 
+ MJE = 0.3856 
+ TF = 1.25E-009 
+ XTF = 50 
+ VTF = 5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.35E-010 
+ VJC = 0.6553 
+ MJC = 0.4659 
+ XCJC = 1 
+ TR = 1.1E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 8.475E-014 
+ N = 0.9575 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 676.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBHV9540Z
*
* NXP Semiconductors
*
* High voltage BISS-transistor PNP
* IC   = 0,5 A
* VCEO = 400 V 
* hFE  = min. 100 typ. 155 @ 10V/50mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 32/2009
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBHV9540Z 1 2 3
*
Q1 1 2 3 PBHV9540Z
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBHV9540Z PNP 
+ IS = 4.16E-013 
+ NF = 0.9886 
+ ISE = 3.42E-014 
+ NE = 1.219 
+ BF = 157 
+ IKF = 0.025 
+ VAF = 7 
+ NR = 0.9953 
+ ISC = 1.494E-012 
+ NC = 1.22 
+ BR = 6.34 
+ IKR = 1.1 
+ VAR = 107 
+ RB = 4.2 
+ IRB = 0.0007 
+ RBM = 0.843 
+ RE = 0.02112 
+ RC = 0.09406 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.493E-010 
+ VJE = 0.7498 
+ MJE = 0.3828 
+ TF = 1.35E-009 
+ XTF = 50 
+ VTF = 5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 9.748E-011 
+ VJC = 0.5 
+ MJC = 0.4525 
+ XCJC = 1 
+ TR = 2E-005 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 1.021E-012 
+ N = 0.9698 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 304.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBRN113ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 250 typ. 400 @ 5V/600mA
* R1   = 1000 ohm
* R2   = 500 ohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBRN113ET 1 2 3
*
Q1 1 2 3 PBRN113ET 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBRN113ET NPN 
+ IS = 5.558E-013 
+ NF = 0.9887 
+ ISE = 4.188E-014 
+ NE = 1.877 
+ BF = 1200 
+ IKF = 0.6 
+ VAF = 15 
+ NR = 0.987 
+ ISC = 1.007E-012 
+ NC = 2.474 
+ BR = 100 
+ IKR = 1.6 
+ VAR = 15 
+ RB = 38 
+ IRB = 0.0008 
+ RBM = 0.5 
+ RE = 0.05 
+ RC = 0.16 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.392E-011 
+ VJE = 0.55 
+ MJE = 0.3462 
+ TF = 4.8E-010 
+ XTF = 9 
+ VTF = 0.8 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.112E-011 
+ VJC = 1 
+ MJC = 0.2062 
+ XCJC = 1 
+ TR = 8E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.775
.MODEL DIODE D 
+ IS = 1.746E-014 
+ N = 1.5 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBRN113ZT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min.500  typ.720 @ 5V/600mA
* R1   = 1 kOhm
* R2   = 10 kOhm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBRN113ZT 1 2 3 
*
Q1 1 2 3 PBRN113ZT 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBRN113ZT NPN 
+ IS = 5.558E-013 
+ NF = 0.9887 
+ ISE = 4.188E-014 
+ NE = 1.877 
+ BF = 1200 
+ IKF = 0.6 
+ VAF = 15 
+ NR = 0.987 
+ ISC = 1.007E-012 
+ NC = 2.474 
+ BR = 100 
+ IKR = 1.6 
+ VAR = 15 
+ RB = 38 
+ IRB = 0.0008 
+ RBM = 0.5 
+ RE = 0.05 
+ RC = 0.16 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.392E-011 
+ VJE = 0.55 
+ MJE = 0.3462 
+ TF = 4.8E-010 
+ XTF = 9 
+ VTF = 0.8 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.112E-011 
+ VJC = 1 
+ MJC = 0.2062 
+ XCJC = 1 
+ TR = 8E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.775
.MODEL DIODE D 
+ IS = 1.746E-014 
+ N = 1.5 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBRN123ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min.350  typ.560 @ 5V/600mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBRN123ET 1 2 3 
*
Q1 1 2 3 PBRN123ET 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBRN123ET NPN 
+ IS = 5.558E-013 
+ NF = 0.9887 
+ ISE = 4.188E-014 
+ NE = 1.877 
+ BF = 1200 
+ IKF = 0.6 
+ VAF = 15 
+ NR = 0.987 
+ ISC = 1.007E-012 
+ NC = 2.474 
+ BR = 100 
+ IKR = 1.6 
+ VAR = 15 
+ RB = 38 
+ IRB = 0.0008 
+ RBM = 0.5 
+ RE = 0.05 
+ RC = 0.16 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.392E-011 
+ VJE = 0.55 
+ MJE = 0.3462 
+ TF = 4.8E-010 
+ XTF = 9 
+ VTF = 0.8 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.112E-011 
+ VJC = 1 
+ MJC = 0.2062 
+ XCJC = 1 
+ TR = 8E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.775
.MODEL DIODE D 
+ IS = 1.746E-014 
+ N = 1.5 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBRN123YT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min.500  typ.720 @ 5V/600mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBRN123YT 1 2 3
*
Q1 1 2 3 PBRN123YT 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBRN123YT NPN 
+ IS = 5.558E-013 
+ NF = 0.9887 
+ ISE = 4.188E-014 
+ NE = 1.877 
+ BF = 1200 
+ IKF = 0.6 
+ VAF = 15 
+ NR = 0.987 
+ ISC = 1.007E-012 
+ NC = 2.474 
+ BR = 100 
+ IKR = 1.6 
+ VAR = 15 
+ RB = 38 
+ IRB = 0.0008 
+ RBM = 0.5 
+ RE = 0.05 
+ RC = 0.16 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.392E-011 
+ VJE = 0.55 
+ MJE = 0.3462 
+ TF = 4.8E-010 
+ XTF = 9 
+ VTF = 0.8 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.112E-011 
+ VJC = 1 
+ MJC = 0.2062 
+ XCJC = 1 
+ TR = 8E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.775
.MODEL DIODE D 
+ IS = 1.746E-014 
+ N = 1.5 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBRP113ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min.130  typ.190 @ 5V/300mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBRP113ET PNP 
+ IS = 1.951E-013 
+ NF = 0.9911 
+ ISE = 4.577E-015 
+ NE = 1.258 
+ BF = 430 
+ IKF = 0.85 
+ VAF = 25 
+ NR = 0.9905 
+ ISC = 2.895E-014 
+ NC = 1.116 
+ BR = 91.2 
+ IKR = 0.3 
+ VAR = 8 
+ RB = 18.7 
+ IRB = 0.0004808 
+ RBM = 2.03 
+ RE = 0.115 
+ RC = 0.09 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.514E-011 
+ VJE = 0.55 
+ MJE = 0.347 
+ TF = 8E-010 
+ XTF = 1.5 
+ VTF = 1 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 4.145E-011 
+ VJC = 0.7487 
+ MJC = 0.4803 
+ XCJC = 1 
+ TR = 1.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78  
.ENDS
**
**********************************************************
*
* PBRP113ZT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 230 typ. 320 @ 5V/300mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBRP113ZT PNP 
+ IS = 1.951E-013 
+ NF = 0.9911 
+ ISE = 4.577E-015 
+ NE = 1.258 
+ BF = 430 
+ IKF = 0.85 
+ VAF = 25 
+ NR = 0.9905 
+ ISC = 2.895E-014 
+ NC = 1.116 
+ BR = 91.2 
+ IKR = 0.3 
+ VAR = 8 
+ RB = 18.7 
+ IRB = 0.0004808 
+ RBM = 2.03 
+ RE = 0.115 
+ RC = 0.09 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.514E-011 
+ VJE = 0.55 
+ MJE = 0.347 
+ TF = 8E-010 
+ XTF = 1.5 
+ VTF = 1 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 4.145E-011 
+ VJC = 0.7487 
+ MJC = 0.4803 
+ XCJC = 1 
+ TR = 1.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBRP123ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 180 typ. 250 @ 5V/300mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBRP123ET PNP
+ IS = 1.951E-013 
+ NF = 0.9911 
+ ISE = 4.577E-015 
+ NE = 1.258 
+ BF = 430 
+ IKF = 0.85 
+ VAF = 25 
+ NR = 0.9905 
+ ISC = 2.895E-014 
+ NC = 1.116 
+ BR = 91.2 
+ IKR = 0.3 
+ VAR = 8 
+ RB = 18.7 
+ IRB = 0.0004808 
+ RBM = 2.03 
+ RE = 0.115 
+ RC = 0.09 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.514E-011 
+ VJE = 0.55 
+ MJE = 0.347 
+ TF = 8E-010 
+ XTF = 1.5 
+ VTF = 1 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 4.145E-011 
+ VJC = 0.7487 
+ MJC = 0.4803 
+ XCJC = 1 
+ TR = 1.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBRP123YT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 230 typ. 320 @ 5V/300mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBRP123YT PNP 
+ IS = 1.951E-013 
+ NF = 0.9911 
+ ISE = 4.577E-015 
+ NE = 1.258 
+ BF = 430 
+ IKF = 0.85 
+ VAF = 25 
+ NR = 0.9905 
+ ISC = 2.895E-014 
+ NC = 1.116 
+ BR = 91.2 
+ IKR = 0.3 
+ VAR = 8 
+ RB = 18.7 
+ IRB = 0.0004808 
+ RBM = 2.03 
+ RE = 0.115 
+ RC = 0.09 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.514E-011
.ENDS
**
**********************************************************
*
* PBSS2515E
*
* NXP Semiconductors
*
* NPN low VCEsat (BISS) transistor
* IC   = 0,5 A
* VCEO = 15 V 
* hFE  = min. 150 @  2V/100mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2005
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS2515E NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS2515M
*
* NXP Semiconductors
*
* BISS transistor NPN
* IC   = 500 mA
* VCEO = 15 V 
* hFE  = min. 150 @  2V/100mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 07/2003
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS2515M NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS2515VPN
*
* NXP Semiconductors
*
* low VCE(sat) NPN/PNP transistor
* IC   = 1 A
* VCEO = 15 V 
* hFE  = min. 150 @ 2V/100mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2 
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 2
*
***************************************************************
*#
.SUBCKT PBSS2515VPN_NPN 1 2 3
*
Q1 1 2 3 PBSS2515VPN_NPN
*
.MODEL PBSS2515VPN_NPN NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
*
.SUBCKT PBSS2515VPN_PNP 1 2 3
*
Q2 1 2 3 PBSS2515VPN_PNP
*
.MODEL PBSS2515VPN_PNP PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS2515VS
*
* NXP Semiconductors
*
* low VCE(sat) NPN double transistor
* IC   = 1 A
* VCEO = 15 V 
* hFE  = min. 150 @  2V/100 mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2 
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 2
*
***********************************************************
*#
.MODEL QPBSS2515VS NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS2515YPN
*
* NXP Semiconductors
*
* low VCE(sat) NPN/PNP transistor
* IC   = 1 A
* VCEO = 15 V 
* hFE  = min. 150 @ 2V/100 mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2 
* Package Pin 3;6: Collector TR2;TR1
*
* 
*
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT PBSS2515YPN_NPN 1 2 3
*
Q1 1 2 3 PBSS2515YPN_NPN
*
.MODEL PBSS2515YPN_NPN NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
*
.SUBCKT PBSS2515YPN_PNP 1 2 3
*
Q1 1 2 3 PBSS2515YPN_PNP
*
.MODEL PBSS2515YPN_PNP PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS2540E
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 500 mA
* VCEO = 40 V 
* hFE  = min. 100 @ 2V/100 mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 2
*
***********************************************************
*#
.SUBCKT PBSS2540E 1 2 3
*
Q1 1 2 3 PBSS2540E
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS2540E NPN
+ IS = 4.366E-014 
+ NF = 0.9846 
+ ISE = 1.073E-015 
+ NE = 1.338 
+ BF = 400 
+ IKF = 0.1 
+ VAF = 20 
+ NR = 0.985 
+ ISC = 1E-018 
+ NC = 2.753 
+ BR = 40 
+ IKR = 0.4 
+ VAR = 10.4 
+ RB = 48.2 
+ IRB = 0.0004 
+ RBM = 8.46 
+ RE = 0.09 
+ RC = 0.2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.557E-011 
+ VJE = 0.8 
+ MJE = 0.36 
+ TF = 5.55E-010 
+ XTF = 3 
+ VTF = 1.5 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 7.6E-012 
+ VJC = 0.5172 
+ MJC = 0.3587 
+ XCJC = 1 
+ TR = 5.4E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 2.86E-015 
+ N = 1.016 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS2540M
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 500 mA
* VCEO = 40 V 
* hFE  = min. 100 @  2V/100 mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS2540M 1 2 3
*
Q1 1 2 3 PBSS2540M
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS2540M NPN
+ IS = 4.366E-014 
+ NF = 0.9846 
+ ISE = 1.073E-015 
+ NE = 1.338 
+ BF = 400 
+ IKF = 1 
+ VAF = 173 
+ NR = 0.985 
+ ISC = 1E-018 
+ NC = 2.753 
+ BR = 36.5 
+ IKR = 2000 
+ VAR = 10.4 
+ RB = 48.2 
+ IRB = 0.0004 
+ RBM = 8.46 
+ RE = 0.105 
+ RC = 0.225 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.557E-011 
+ VJE = 0.8 
+ MJE = 0.36 
+ TF = 5.7E-010 
+ XTF = 3 
+ VTF = 1.5 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 7.6E-012 
+ VJC = 0.5172 
+ MJC = 0.3587 
+ XCJC = 1 
+ TR = 5.4E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 2.86E-015 
+ N = 1.016 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS301ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 4  A
* VCEO = 20 V 
* hFE  = min. 250 typ. 400 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector 
* Package Pin 3;6: Base;Collector
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS301ND 1 2 3
*
Q1 1 2 3 PBSS301ND
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS301ND NPN 
+ IS = 7.987E-013 
+ NF = 0.9652 
+ ISE = 1.1E-014 
+ NE = 1.33 
+ BF = 510 
+ IKF = 9 
+ VAF = 65 
+ NR = 0.9659 
+ ISC = 1.147E-014 
+ NC = 1.14 
+ BR = 223 
+ IKR = 1.1 
+ VAR = 10.5 
+ RB = 21.5 
+ IRB = 0.0008 
+ RBM = 1.8 
+ RE = 0.03 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.681E-010 
+ VJE = 0.7622 
+ MJE = 0.3574 
+ TF = 2.45E-009 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 6 
+ PTF = 0 
+ CJC = 9.107E-011 
+ VJC = 0.04067 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 3.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 1E-018 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS301NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,3  A
* VCEO = 12 V 
* hFE  = min. 250 typ. 480 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 09/2007
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS301NX NPN 
+ IS = 1.586E-012 
+ NF = 0.9735 
+ ISE = 9.954E-015 
+ NE = 1.309 
+ BF = 507 
+ IKF = 11.3 
+ VAF = 40 
+ NR = 0.9735 
+ ISC = 4.786E-014 
+ NC = 1.216 
+ BR = 340 
+ IKR = 2.8 
+ VAR = 14 
+ RB = 19 
+ IRB = 0.00052 
+ RBM = 0.688 
+ RE = 0.015 
+ RC = 0.009 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.711E-010 
+ VJE = 0.7501 
+ MJE = 0.3471 
+ TF = 1.8E-009 
+ XTF = 1.7 
+ VTF = 1.8 
+ ITF = 1.1 
+ PTF = 0 
+ CJC = 2.791E-010 
+ VJC = 0.2728 
+ MJC = 0.2105 
+ XCJC = 1 
+ TR = 1E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS301NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,8  A
* VCEO = 12 V 
* hFE  = min.250 typ.480 @  2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS301NZ NPN 
+ IS = 1.586E-012 
+ NF = 0.9735 
+ ISE = 9.954E-015 
+ NE = 1.309 
+ BF = 507 
+ IKF = 11.3 
+ VAF = 40 
+ NR = 0.9735 
+ ISC = 4.786E-014 
+ NC = 1.216 
+ BR = 340 
+ IKR = 2.8 
+ VAR = 14 
+ RB = 19 
+ IRB = 0.00052 
+ RBM = 0.688 
+ RE = 0.015 
+ RC = 0.009 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.711E-010 
+ VJE = 0.7501 
+ MJE = 0.3471 
+ TF = 1.8E-009 
+ XTF = 1.7 
+ VTF = 1.8 
+ ITF = 1.1 
+ PTF = 0 
+ CJC = 2.791E-010 
+ VJC = 0.2728 
+ MJC = 0.2105 
+ XCJC = 1 
+ TR = 1E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS301PD
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4  A
* VCEO = 20 V 
* hFE  = min.200 typ.330 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector ;Collector
* Package Pin 3;6: Base;Collector
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS301PD 1 2 3
*
Q1 1 2 3 PBSS301PD
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS301PD PNP 
+ IS = 6.826E-013 
+ NF = 0.9637 
+ ISE = 3.983E-014 
+ NE = 1.228 
+ BF = 420 
+ IKF = 3.4 
+ VAF = 20 
+ NR = 0.96 
+ ISC = 1E-018 
+ NC = 2.7 
+ BR = 160 
+ IKR = 0.7 
+ VAR = 6.9 
+ RB = 20 
+ IRB = 0.001 
+ RBM = 0.49 
+ RE = 0.037 
+ RC = 0.035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.049E-010 
+ VJE = 1 
+ MJE = 0.469 
+ TF = 2.3E-009 
+ XTF = 0.4 
+ VTF = 15 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 2.529E-010 
+ VJC = 0.5406 
+ MJC = 0.3499 
+ XCJC = 1 
+ TR = 3.3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.748E-013 
+ N = 1.2 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS301PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,3  A
* VCEO = 12 V 
* hFE  = min.200 typ.335 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 06/2007
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS301PX PNP 
+ IS = 1.565E-012 
+ NF = 0.9667 
+ ISE = 8.661E-014 
+ NE = 1.361 
+ BF = 423 
+ IKF = 7 
+ VAF = 14 
+ NR = 0.967 
+ ISC = 2.875E-013 
+ NC = 1.255 
+ BR = 359 
+ IKR = 0.7 
+ VAR = 5.5 
+ RB = 21.6 
+ IRB = 0.00048 
+ RBM = 0.7 
+ RE = 0.017 
+ RC = 0.004 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.432E-010 
+ VJE = 1 
+ MJE = 0.4564 
+ TF = 3.3E-009 
+ XTF = 1 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 5.044E-010 
+ VJC = 2 
+ MJC = 0.6638 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS301PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,7  A
* VCEO = 12 V 
* hFE  = min.200 typ.335 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS301PZ PNP 
+ IS = 1.565E-012 
+ NF = 0.9667 
+ ISE = 8.661E-014 
+ NE = 1.361 
+ BF = 423 
+ IKF = 7 
+ VAF = 14 
+ NR = 0.967 
+ ISC = 2.875E-013 
+ NC = 1.255 
+ BR = 359 
+ IKR = 0.7 
+ VAR = 5.5 
+ RB = 21.6 
+ IRB = 0.00048 
+ RBM = 0.7 
+ RE = 0.017 
+ RC = 0.004 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.432E-010 
+ VJE = 1 
+ MJE = 0.4564 
+ TF = 3.3E-009 
+ XTF = 1 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 5.044E-010 
+ VJC = 2 
+ MJC = 0.6638 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS302ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 4  A
* VCEO = 40 V 
* hFE  = min.250 typ.385 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 42/2005
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS302ND 1 2 3
*
Q1 1 2 3 PBSS302ND
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS302ND NPN 
+ IS = 1.147E-012 
+ NF = 0.9743 
+ ISE = 1.81E-015 
+ NE = 1.121 
+ BF = 600 
+ IKF = 3 
+ VAF = 15 
+ NR = 0.974 
+ ISC = 3.648E-013 
+ NC = 2.393 
+ BR = 110 
+ IKR = 5 
+ VAR = 8.8 
+ RB = 14.4 
+ IRB = 0.0006 
+ RBM = 0.74 
+ RE = 0.038 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.681E-010 
+ VJE = 0.7622 
+ MJE = 0.3574 
+ TF = 1.2E-009 
+ XTF = 2.5 
+ VTF = 0.6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 9.107E-011 
+ VJC = 0.04067 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 4E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 2.889E-014 
+ N = 1.004 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS302NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,3  A
* VCEO = 20 V 
* hFE  = min.250 typ.550 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 08/2007
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS302NX NPN 
+ IS = 1.39E-012 
+ NF = 0.9539 
+ ISE = 1.265E-014 
+ NE = 1.426 
+ BF = 570 
+ IKF = 13 
+ VAF = 40 
+ NR = 0.954 
+ ISC = 4.055E-014 
+ NC = 1.216 
+ BR = 380 
+ IKR = 1.2 
+ VAR = 14 
+ RB = 19.5 
+ IRB = 0.00052 
+ RBM = 0.688 
+ RE = 0.015 
+ RC = 0.0084 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.419E-010 
+ VJE = 0.7772 
+ MJE = 0.3561 
+ TF = 1.85E-009 
+ XTF = 1 
+ VTF = 5 
+ ITF = 1.9 
+ PTF = 0 
+ CJC = 2.947E-010 
+ VJC = 0.6762 
+ MJC = 0.4078 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS302NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,8  A
* VCEO = 20 V 
* hFE  = min.250 typ.520 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS302NZ NPN
+ IS = 1.39E-012 
+ NF = 0.9539 
+ ISE = 1.265E-014 
+ NE = 1.426 
+ BF = 570 
+ IKF = 13 
+ VAF = 40 
+ NR = 0.954 
+ ISC = 4.055E-014 
+ NC = 1.216 
+ BR = 380 
+ IKR = 1.2 
+ VAR = 14 
+ RB = 19.5 
+ IRB = 0.00052 
+ RBM = 0.688 
+ RE = 0.015 
+ RC = 0.0084 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.419E-010 
+ VJE = 0.7772 
+ MJE = 0.3561 
+ TF = 1.85E-009 
+ XTF = 1 
+ VTF = 5 
+ ITF = 1.9 
+ PTF = 0 
+ CJC = 2.947E-010 
+ VJC = 0.6762 
+ MJC = 0.4078 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS302PD
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4  A
* VCEO = 40 V 
* hFE  = min.175 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector 
* Package Pin 3;6: Base;Collector 
*
*
* Extraction date (week/year): 42/2005
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS302PD 1 2 3
*
Q1 1 2 3 PBSS302PD
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS302PD PNP 
+   IS = 6.033E-013 
+   NF = 0.9576 
+   ISE = 4.885E-014 
+   NE = 1.233 
+   BF = 380 
+   IKF = 1.95 
+   VAF = 12.8 
+   NR = 0.9592 
+   ISC = 1E-018 
+   NC = 3 
+   BR = 68 
+   IKR = 1.5 
+   VAR = 6.9 
+   RB = 15.2 
+   IRB = 0.001 
+   RBM = 0.75 
+   RE = 0.035 
+   RC = 0.018 
+   XTB = 0 
+   EG = 1.11 
+   XTI = 3 
+   CJE = 4.977E-010 
+   VJE = 0.8119 
+   MJE = 0.3949 
+   TF = 2.35E-009 
+   XTF = 15 
+   VTF = 5 
+   ITF = 10 
+   PTF = 0 
+   CJC = 1.698E-010 
+   VJC = 0.4041 
+   MJC = 0.2934 
+   XCJC = 1 
+   TR = 2.5E-009 
+   CJS = 0 
+   VJS = 0.75 
+   MJS = 0.333 
+   FC = 0.8 
.MODEL DIODE D 
+   IS = 2.586E-013 
+   N = 1.197 
+   BV = 1000 
+   IBV = 0.001 
+   RS = 1000 
+   CJO = 0 
+   VJ = 1 
+   M = 0.9 
+   FC = 0 
+   TT = 0 
+   EG = 1.1 
+   XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS302PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,1  A
* VCEO = 20 V 
* hFE  = min.200 typ.290 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 06/2007
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS302PX PNP 
+ IS = 1.842E-012 
+ NF = 0.9678 
+ ISE = 7.225E-013 
+ NE = 1.535 
+ BF = 466 
+ IKF = 4.5 
+ VAF = 20 
+ NR = 0.968 
+ ISC = 1.312E-013 
+ NC = 1.131 
+ BR = 177 
+ IKR = 1 
+ VAR = 7 
+ RB = 12 
+ IRB = 0.0005636 
+ RBM = 9.422 
+ RE = 0.017 
+ RC = 0.007 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.03E-010 
+ VJE = 0.9677 
+ MJE = 0.4485 
+ TF = 2.3E-009 
+ XTF = 2 
+ VTF = 2 
+ ITF = 1 
+ PTF = 0 
+ CJC = 3.809E-010 
+ VJC = 0.5971 
+ MJC = 0.3666 
+ XCJC = 1 
+ TR = 1.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS302PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,5  A
* VCEO = 20 V 
* hFE  = min.200 typ.290 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS302PZ PNP 
+ IS = 1.842E-012 
+ NF = 0.9678 
+ ISE = 7.225E-013 
+ NE = 1.535 
+ BF = 466 
+ IKF = 4.5 
+ VAF = 20 
+ NR = 0.968 
+ ISC = 1.312E-013 
+ NC = 1.131 
+ BR = 177 
+ IKR = 1 
+ VAR = 7 
+ RB = 12 
+ IRB = 0.0005636 
+ RBM = 9.422 
+ RE = 0.017 
+ RC = 0.007 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.03E-010 
+ VJE = 0.9677 
+ MJE = 0.4485 
+ TF = 2.3E-009 
+ XTF = 2 
+ VTF = 2 
+ ITF = 1 
+ PTF = 0 
+ CJC = 3.809E-010 
+ VJC = 0.5971 
+ MJC = 0.3666 
+ XCJC = 1 
+ TR = 1.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS303ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 3 A
* VCEO = 60 V 
* hFE  = min.120 typ.185 @ 2V/3A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector 
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 12/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303ND 1 2 3
*
Q1 1 2 3 PBSS303ND
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS303ND NPN 
+ IS = 7.902E-013 
+ NF = 0.9608 
+ ISE = 3.296E-014 
+ NE = 1.749 
+ BF = 563 
+ IKF = 1.5 
+ VAF = 10 
+ NR = 0.961 
+ ISC = 1E-018 
+ NC = 3 
+ BR = 60 
+ IKR = 5 
+ VAR = 50 
+ RB = 22.2 
+ IRB = 0.0006 
+ RBM = 2.3 
+ RE = 0.03 
+ RC = 0.025 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.681E-010 
+ VJE = 0.7622 
+ MJE = 0.3574 
+ TF = 1.8E-009 
+ XTF = 3 
+ VTF = 0.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 1.16E-010 
+ VJC = 0.01835 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 1.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 1.236E-014 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2042 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS303NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,1 A
* VCEO = 30 V 
* hFE  = min.250 typ.430 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 08/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303NX 1 2 3
*
Q1 1 2 3 PBSS303NX
D1 2 1 DIODE
*
.MODEL PBSS303NX NPN 
+ IS = 1.738E-012 
+ NF = 0.9779 
+ ISE = 5.321E-014 
+ NE = 1.856 
+ BF = 505 
+ IKF = 6 
+ VAF = 20 
+ NR = 0.978 
+ ISC = 1.357E-014 
+ NC = 1.183 
+ BR = 188 
+ IKR = 2.5 
+ VAR = 13.5 
+ RB = 15 
+ IRB = 0.0003 
+ RBM = 0.69 
+ RE = 0.016 
+ RC = 0.012 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.553E-010 
+ VJE = 0.7508 
+ MJE = 0.3501 
+ TF = 8E-010 
+ XTF = 5 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.388E-010 
+ VJC = 0.05796 
+ MJC = 0.1793 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7 
.MODEL DIODE D 
+ IS = 2.923E-014 
+ N = 0.9756 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 686.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS303NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,5 A
* VCEO = 30 V 
* hFE  = min.250 typ.430 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303NZ 1 2 3
*
Q1 1 2 3 PBSS303NZ
D1 2 1 DIODE 
*
.MODEL PBSS303NZ NPN 
+ IS = 1.738E-012 
+ NF = 0.9779 
+ ISE = 5.321E-014 
+ NE = 1.856 
+ BF = 505 
+ IKF = 6 
+ VAF = 20 
+ NR = 0.978 
+ ISC = 1.357E-014 
+ NC = 1.183 
+ BR = 188 
+ IKR = 2.5 
+ VAR = 13.5 
+ RB = 15 
+ IRB = 0.0003 
+ RBM = 0.69 
+ RE = 0.016 
+ RC = 0.012 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.553E-010 
+ VJE = 0.7508 
+ MJE = 0.3501 
+ TF = 8E-010 
+ XTF = 5 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.388E-010 
+ VJC = 0.05796 
+ MJC = 0.1793 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7 
.MODEL DIODE D 
+ IS = 2.923E-014 
+ N = 0.9756 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 686.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS303PD
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 3 A
* VCEO = 60 V 
* hFE  = min.95 typ.135 @ 2V/3A
*
*
*
* Package: SOT 223
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303PD 1 2 3
*
Q1 1 2 3 PBSS303PD
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS303PD PNP 
+ IS = 6.57E-013 
+ NF = 0.9801 
+ ISE = 1.429E-013 
+ NE = 1.386 
+ BF = 290 
+ IKF = 2.4 
+ VAF = 30 
+ NR = 0.98 
+ ISC = 1E-018 
+ NC = 3 
+ BR = 32 
+ IKR = 1.4 
+ VAR = 20 
+ RB = 14.4 
+ IRB = 0.001472 
+ RBM = 1 
+ RE = 0.032 
+ RC = 0.027 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.374E-010 
+ VJE = 0.7613 
+ MJE = 0.3745 
+ TF = 2.6E-009 
+ XTF = 2 
+ VTF = 0.8 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 1.955E-010 
+ VJC = 0.6368 
+ MJC = 0.399 
+ XCJC = 1 
+ TR = 2.6E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.65 
.MODEL DIODE D 
+ IS = 1.854E-013 
+ N = 1.112 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 660.7 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS303PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,1 A
* VCEO = 30 V 
* hFE  = min.200 typ.310 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 06/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303PX 1 2 3
*
Q1 1 2 3 PBSS303PX
D1 1 2   DIODE
*
.MODEL PBSS303PX PNP
+ IS = 1.797E-012 
+ NF = 0.9878 
+ ISE = 2.024E-013 
+ NE = 1.518 
+ BF = 400 
+ IKF = 4 
+ VAF = 24 
+ NR = 0.9875 
+ ISC = 6.554E-014 
+ NC = 1.072 
+ BR = 140 
+ IKR = 3 
+ VAR = 7 
+ RB = 15.25 
+ IRB = 0.0008109 
+ RBM = 0.1448 
+ RE = 0.016 
+ RC = 0.009 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.781E-010 
+ VJE = 0.8192 
+ MJE = 0.3993 
+ TF = 1.9E-009 
+ XTF = 2 
+ VTF = 1.8 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 2.973E-010 
+ VJC = 0.464 
+ MJC = 0.2978 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 6.38E-016 
+ N = 1.037 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 9003 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS303PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 5,3 A
* VCEO = 30 V 
* hFE  = min.200 typ.300 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS303PZ 1 2 3
*
Q1 1 2 3 PBSS303PZ 
D1 1 2 DIODE 
*
.MODEL PBSS303PZ PNP
+ IS = 1.797E-012 
+ NF = 0.9878 
+ ISE = 2.024E-013 
+ NE = 1.518 
+ BF = 400 
+ IKF = 4 
+ VAF = 24 
+ NR = 0.9875 
+ ISC = 6.554E-014 
+ NC = 1.072 
+ BR = 140 
+ IKR = 3 
+ VAR = 7 
+ RB = 15.25 
+ IRB = 0.0008109 
+ RBM = 0.1448 
+ RE = 0.016 
+ RC = 0.009 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.781E-010 
+ VJE = 0.8192 
+ MJE = 0.3993 
+ TF = 1.9E-009 
+ XTF = 2 
+ VTF = 1.8 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 2.973E-010 
+ VJC = 0.464 
+ MJC = 0.2978 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 6.38E-016 
+ N = 1.037 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 9003 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 3 A
* VCEO = 80 V 
* hFE  = min.70 typ.105 @ 2V/3A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector ;Collector
* Package Pin 3;6: Base;Collector
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304ND 1 2 3
*
Q1 1 2 3 PBSS304ND
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS304ND NPN 
+ IS = 5.564E-013 
+ NF = 0.9736 
+ ISE = 2.855E-013 
+ NE = 2.797 
+ BF = 422.7 
+ IKF = 0.8907 
+ VAF = 83.31 
+ NR = 0.9801 
+ ISC = 2.692E-014 
+ NC = 1.686 
+ BR = 55.29 
+ IKR = 3 
+ VAR = 16 
+ RB = 18.5 
+ IRB = 0.00035 
+ RBM = 2 
+ RE = 0.033 
+ RC = 0.024 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.113E-010 
+ VJE = 0.7076 
+ MJE = 0.3385 
+ TF = 1.25E-009 
+ XTF = 16.31 
+ VTF = 0.5274 
+ ITF = 1.251 
+ PTF = 0 
+ CJC = 6.421E-011 
+ VJC = 0.02933 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 7.656E-014 
+ N = 0.975 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 881 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 4,7 A
* VCEO = 60 V 
* hFE  = min.250 typ.470 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 08/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304NX 1 2 3
*
Q1 1 2 3 PBSS304NX
D1 2 1 DIODE 
*
.MODEL PBSS304NX NPN 
+ IS = 1.627E-012 
+ NF = 0.9605 
+ ISE = 7.603E-015 
+ NE = 1.366 
+ BF = 550 
+ IKF = 1.8 
+ VAF = 2 
+ NR = 0.961 
+ ISC = 3.895E-014 
+ NC = 1.153 
+ BR = 108 
+ IKR = 6.5 
+ VAR = 20 
+ RB = 20 
+ IRB = 0.00015 
+ RBM = 0.41 
+ RE = 0.016 
+ RC = 0.011 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.302E-010 
+ VJE = 0.7516 
+ MJE = 0.3495 
+ TF = 1.1E-009 
+ XTF = 10 
+ VTF = 1 
+ ITF = 1.4 
+ PTF = 0 
+ CJC = 1.714E-010 
+ VJC = 0.6475 
+ MJC = 0.4616 
+ XCJC = 1 
+ TR = 3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 5.976E-015 
+ N = 0.93 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 523.6 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,2 A
* VCEO = 60 V 
* hFE  = min.250 typ.470 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304NZ 1 2 3
*
Q1 1 2 3 PBSS304NZ
D1 2 1 DIODE
*
.MODEL PBSS304NZ NPN 
+ IS = 1.627E-012 
+ NF = 0.9605 
+ ISE = 7.603E-015 
+ NE = 1.366 
+ BF = 550 
+ IKF = 1.8 
+ VAF = 2 
+ NR = 0.961 
+ ISC = 3.895E-014 
+ NC = 1.153 
+ BR = 108 
+ IKR = 6.5 
+ VAR = 20 
+ RB = 20 
+ IRB = 0.00015 
+ RBM = 0.41 
+ RE = 0.016 
+ RC = 0.011 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.302E-010 
+ VJE = 0.7516 
+ MJE = 0.3495 
+ TF = 1.1E-009 
+ XTF = 10 
+ VTF = 1 
+ ITF = 1.4 
+ PTF = 0 
+ CJC = 1.714E-010 
+ VJC = 0.6475 
+ MJC = 0.4616 
+ XCJC = 1 
+ TR = 3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.95 
.MODEL DIODE D 
+ IS = 5.976E-015 
+ N = 0.93 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 523.6 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304PD
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 3 A
* VCEO = 80 V 
* hFE  = min.105 typ.145 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 48/2006 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304PD 1 2 3
*
Q1 1 2 3 PBSS304PD
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS304PD PNP 
+ IS = 5.481E-013 
+ NF = 0.9703 
+ ISE = 4.885E-014 
+ NE = 1.199 
+ BF = 400.9 
+ IKF = 1 
+ VAF = 19 
+ NR = 0.971 
+ ISC = 1E-018 
+ NC = 3 
+ BR = 19 
+ IKR = 5 
+ VAR = 10 
+ RB = 14.98 
+ IRB = 0.0006 
+ RBM = 0.6253 
+ RE = 0.035 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.424E-010 
+ VJE = 0.7495 
+ MJE = 0.3703 
+ TF = 2.2E-009 
+ XTF = 3 
+ VTF = 0.59 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 1.506E-010 
+ VJC = 0.7795 
+ MJC = 0.4519 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.MODEL DIODE D 
+ IS = 3.597E-013 
+ N = 1.073 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 660.7 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4,2 A
* VCEO = 60 V 
* hFE  = min.150 typ.230 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 05/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304PX 1 2 3
*
Q1 1 2 3 PBSS304PX
D1 1 2 DIODE
*
.MODEL PBSS304PX PNP
+ IS = 1.129E-012 
+ NF = 0.9684 
+ ISE = 1.69E-013 
+ NE = 1.398 
+ BF = 300 
+ IKF = 5.5 
+ VAF = 35 
+ NR = 0.968 
+ ISC = 2.791E-014 
+ NC = 1.081 
+ BR = 72.93 
+ IKR = 5 
+ VAR = 10.6 
+ RB = 15 
+ IRB = 0.0003 
+ RBM = 0.41 
+ RE = 0.012 
+ RC = 0.025 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.247E-010 
+ VJE = 0.8132 
+ MJE = 0.3963 
+ TF = 1.75E-009 
+ XTF = 4 
+ VTF = 1 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 2.79E-010 
+ VJC = 0.7386 
+ MJC = 0.4274 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7 
.MODEL DIODE D 
+ IS = 2.551E-013 
+ N = 1.128 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.413 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS304PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4,5 A
* VCEO = 60 V 
* hFE  = min.150 typ.230 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS304PZ 1 2 3
*
Q1 1 2 3 PBSS304PZ 
D1 1 2 DIODE 
*
.MODEL PBSS304PZ PNP
+ IS = 1.129E-012 
+ NF = 0.9684 
+ ISE = 1.69E-013 
+ NE = 1.398 
+ BF = 300 
+ IKF = 5.5 
+ VAF = 35 
+ NR = 0.968 
+ ISC = 2.791E-014 
+ NC = 1.081 
+ BR = 72.93 
+ IKR = 5 
+ VAR = 10.6 
+ RB = 15 
+ IRB = 0.0003 
+ RBM = 0.41 
+ RE = 0.012 
+ RC = 0.025 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.247E-010 
+ VJE = 0.8132 
+ MJE = 0.3963 
+ TF = 1.75E-009 
+ XTF = 4 
+ VTF = 1 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 2.79E-010 
+ VJC = 0.7386 
+ MJC = 0.4274 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7 
.MODEL DIODE D 
+ IS = 2.551E-013 
+ N = 1.128 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.413 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS305ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 3 A
* VCEO = 100 V 
* hFE  = min.70 typ.95 @ 2V/2A
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
*  
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS305ND 1 2 3
*
Q1 1 2 3 PBSS305ND
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS305ND NPN 
+ IS = 5.603E-013 
+ NF = 0.9685 
+ ISE = 1.816E-013 
+ NE = 2.179 
+ BF = 340 
+ IKF = 0.65 
+ VAF = 20 
+ NR = 0.969 
+ ISC = 1E-018 
+ NC = 0.8 
+ BR = 62.52 
+ IKR = 1.3 
+ VAR = 50 
+ RB = 13.4 
+ IRB = 0.0006 
+ RBM = 1.95 
+ RE = 0.03 
+ RC = 0.025 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.512E-010 
+ VJE = 0.6957 
+ MJE = 0.3312 
+ TF = 1.2E-009 
+ XTF = 8 
+ VTF = 0.4 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 6.298E-011 
+ VJC = 0.01607 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 2.312E-013 
+ N = 1.041 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 112.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS305NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 4,6 A
* VCEO = 80 V 
* hFE  = min.180 typ.280 @ 2V/2A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 50/2006
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS305NX 1 2 3 
*
Q1 1 2 3 MAIN 
D1 2 1 DIODE
*
.MODEL MAIN NPN 
+ IS = 1.405E-012 
+ NF = 0.9839 
+ ISE = 2.083E-014 
+ NE = 1.563 
+ BF = 432.3 
+ IKF = 1.8 
+ VAF = 15 
+ NR = 0.9845 
+ ISC = 1E-018 
+ NC = 0.7632 
+ BR = 97.94 
+ IKR = 4 
+ VAR = 19 
+ RB = 17 
+ IRB = 0.0007586 
+ RBM = 0.7223 
+ RE = 0.015 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.63E-010 
+ VJE = 0.739 
+ MJE = 0.3465 
+ TF = 8.2E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 9.521E-011 
+ VJC = 0.1453 
+ MJC = 0.2912 
+ XCJC = 1 
+ TR = 2.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.6 
.MODEL DIODE D 
+ IS = 1.967E-013 
+ N = 0.9985 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 210 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS*
**********************************************************
*
* PBSS305NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,1 A
* VCEO = 80 V 
* hFE  = min.180 typ.280 @ 2V/2A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS305NZ 1 2 3
*
Q1 1 2 3 PBSS305NZ
D1 2 1 DIODE
*
.MODEL PBSS305NZ NPN 
+ IS = 1.405E-012 
+ NF = 0.9839 
+ ISE = 2.083E-014 
+ NE = 1.563 
+ BF = 432.3 
+ IKF = 1.8 
+ VAF = 15 
+ NR = 0.9845 
+ ISC = 1E-018 
+ NC = 0.7632 
+ BR = 97.94 
+ IKR = 4 
+ VAR = 19 
+ RB = 17 
+ IRB = 0.0007586 
+ RBM = 0.7223 
+ RE = 0.015 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.63E-010 
+ VJE = 0.739 
+ MJE = 0.3465 
+ TF = 8.2E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 9.521E-011 
+ VJC = 0.1453 
+ MJC = 0.2912 
+ XCJC = 1 
+ TR = 2.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.6 
.MODEL DIODE D 
+ IS = 1.967E-013 
+ N = 0.9985 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 210 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS305PD
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 2 A
* VCEO = 100 V 
* hFE  = min.175 typ.275 @ 2V/500mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector 
* Package Pin 3;6: Base;Collector 
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS305PD 1 2 3
*
Q1 1 2 3 PBSS305PD
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS305PD PNP 
+ IS = 7.266E-013 
+ NF = 0.9757 
+ ISE = 2.931E-013 
+ NE = 1.47 
+ BF = 319.2 
+ IKF = 0.32 
+ VAF = 4 
+ NR = 0.981 
+ ISC = 2.582E-016 
+ NC = 0.9301 
+ BR = 15.5 
+ IKR = 8 
+ VAR = 18 
+ RB = 13.58 
+ IRB = 0.004571 
+ RBM = 0.6635 
+ RE = 0.03 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 4.977E-010 
+ VJE = 0.8119 
+ MJE = 0.3949 
+ TF = 1.9E-009 
+ XTF = 7 
+ VTF = 0.65 
+ ITF = 0.75 
+ PTF = 0 
+ CJC = 5.189E-011 
+ VJC = 2 
+ MJC = 0.267 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.MODEL DIODE D 
+ IS = 2.884E-013 
+ N = 1.011 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 312.6 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS305PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4 A
* VCEO = 80 V 
* hFE  = min.200 typ.280 @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 05/2007
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS305PX PNP
+ IS = 8.97E-013 
+ NF = 0.9646 
+ ISE = 3.183E-013 
+ NE = 1.429 
+ BF = 300 
+ IKF = 2 
+ VAF = 8 
+ NR = 0.965 
+ ISC = 7.079E-013 
+ NC = 1.114 
+ BR = 46.56 
+ IKR = 5 
+ VAR = 10.6 
+ RB = 12 
+ IRB = 0.001472 
+ RBM = 0.7223 
+ RE = 0.02 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.101E-010 
+ VJE = 0.7918 
+ MJE = 0.383 
+ TF = 1.5E-009 
+ XTF = 7 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 2.245E-010 
+ VJC = 0.7543 
+ MJC = 0.4566 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS305PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4,5 A
* VCEO = 80 V 
* hFE  = min.200 typ.280 @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS305PZ PNP
+ IS = 8.97E-013 
+ NF = 0.9646 
+ ISE = 3.183E-013 
+ NE = 1.429 
+ BF = 300 
+ IKF = 2 
+ VAF = 8 
+ NR = 0.965 
+ ISC = 7.079E-013 
+ NC = 1.114 
+ BR = 46.56 
+ IKR = 5 
+ VAR = 10.6 
+ RB = 12 
+ IRB = 0.001472 
+ RBM = 0.7223 
+ RE = 0.02 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.101E-010 
+ VJE = 0.7918 
+ MJE = 0.383 
+ TF = 1.5E-009 
+ XTF = 7 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 2.245E-010 
+ VJC = 0.7543 
+ MJC = 0.4566 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.ENDS
**
**********************************************************
*
* PBSS306NX
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 4,5 A
* VCEO = 100 V 
* hFE  = min.200 typ.330 @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 07/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS306NX 1 2 3
*
Q1 1 2 3 PBSS306NX
D1 2 1 DIODE 
*
.MODEL PBSS306NX NPN 
+ IS = 1.216E-012 
+ NF = 0.9839 
+ ISE = 2.083E-014 
+ NE = 1.563 
+ BF = 350 
+ IKF = 1.2 
+ VAF = 16 
+ NR = 0.985 
+ ISC = 1E-018 
+ NC = 0.7632 
+ BR = 60 
+ IKR = 5 
+ VAR = 19 
+ RB = 20 
+ IRB = 0.00075 
+ RBM = 0.7 
+ RE = 0.016 
+ RC = 0.014 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.057E-009 
+ VJE = 0.7297 
+ MJE = 0.3396 
+ TF = 9E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 9.184E-011 
+ VJC = 0.3713 
+ MJC = 0.4127 
+ XCJC = 1 
+ TR = 1.6E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.6 
.MODEL DIODE D 
+ IS = 1.967E-013 
+ N = 0.9858 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 202 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS306NZ
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 5,1 A
* VCEO = 100 V 
* hFE  = min.200 typ.330 @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS306NZ 1 2 3
*
Q1 1 2 3 PBSS306NZ
D1 2 1 DIODE 
*
.MODEL PBSS306NZ NPN  
+ IS = 1.216E-012 
+ NF = 0.9839 
+ ISE = 2.083E-014 
+ NE = 1.563 
+ BF = 350 
+ IKF = 1.2 
+ VAF = 16 
+ NR = 0.985 
+ ISC = 1E-018 
+ NC = 0.7632 
+ BR = 60 
+ IKR = 5 
+ VAR = 19 
+ RB = 20 
+ IRB = 0.00075 
+ RBM = 0.7 
+ RE = 0.016 
+ RC = 0.014 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.057E-009 
+ VJE = 0.7297 
+ MJE = 0.3396 
+ TF = 9E-010 
+ XTF = 5 
+ VTF = 2 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 9.184E-011 
+ VJC = 0.3713 
+ MJC = 0.4127 
+ XCJC = 1 
+ TR = 1.6E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.6 
.MODEL DIODE D 
+ IS = 1.967E-013 
+ N = 0.9858 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 202 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS306PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 3,7 A
* VCEO = 100 V 
* hFE  = min.200 typ.330 @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 05/2007
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS306PX 1 2 3 
*
Q1 1 2 3 PBSS306PX
D1 1 2 DIODE 
*
.MODEL PBSS306PX PNP
+ IS = 7.648E-013 
+ NF = 0.9493 
+ ISE = 4.613E-013 
+ NE = 1.487 
+ BF = 260 
+ IKF = 0.55 
+ VAF = 3 
+ NR = 0.9505 
+ ISC = 1.705E-012 
+ NC = 1.143 
+ BR = 27.91 
+ IKR = 2 
+ VAR = 10.6 
+ RB = 12 
+ IRB = 0.001838 
+ RBM = 0.7223 
+ RE = 0.016 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.101E-010 
+ VJE = 0.7918 
+ MJE = 0.383 
+ TF = 1.45E-009 
+ XTF = 7 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.831E-010 
+ VJC = 0.7672 
+ MJC = 0.4807 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 7.361E-014 
+ N = 0.8771 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 146.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS306PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 4,1 A
* VCEO = 100 V 
* hFE  = min.200 typ.330 @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 07/2008
* Simulator: Spice 3
*
***********************************************************
*#
.SUBCKT PBSS306PZ 1 2 3
*
Q1 1 2 3 PBSS306PZ 
D1 1 2 DIODE 
*
.MODEL PBSS306PZ PNP
+ IS = 7.648E-013 
+ NF = 0.9493 
+ ISE = 4.613E-013 
+ NE = 1.487 
+ BF = 260 
+ IKF = 0.55 
+ VAF = 3 
+ NR = 0.9505 
+ ISC = 1.705E-012 
+ NC = 1.143 
+ BR = 27.91 
+ IKR = 2 
+ VAR = 10.6 
+ RB = 12 
+ IRB = 0.001838 
+ RBM = 0.7223 
+ RE = 0.016 
+ RC = 0.015 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.101E-010 
+ VJE = 0.7918 
+ MJE = 0.383 
+ TF = 1.45E-009 
+ XTF = 7 
+ VTF = 2 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 1.831E-010 
+ VJC = 0.7672 
+ MJC = 0.4807 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 7.361E-014 
+ N = 0.8771 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 146.4 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS3515E
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 0,5 A
* VCEO = 15 V 
* hFE  = min.200 @ 2V/500mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2005
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS3515E PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS3515M
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 0,5 A
* VCEO = 15 V 
* hFE  = min.200 @ 2V/10mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS3515M PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS3515VS
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 1 A
* VCEO = 15 V 
* hFE  = min.200 @ 2V/10mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter TR1;TR2
* Package Pin 2;5: Base TR1;TR2 
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 2
*
***********************************************************
*#
.MODEL QPBSS3515VS PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS3540E
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 500 mA
* VCEO = 40 V 
* hFE  = min.200 @ 2V/10mA
*
*
*
* Package: SOT 416
* 
* Package Pin 1: Base
* Package Pin 2: Emitter  
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS3540E PNP 
+ IS = 6.269E-014 
+ NF = 0.9897 
+ ISE = 1.859E-014 
+ NE = 1.487 
+ BF = 400 
+ IKF = 0.081 
+ VAF = 2.5 
+ NR = 0.9902 
+ ISC = 3.909E-014 
+ NC = 1.193 
+ BR = 26 
+ IKR = 0.2 
+ VAR = 5.9 
+ RB = 50 
+ IRB = 0.0004 
+ RBM = 0.1 
+ RE = 0.123 
+ RC = 0.184 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.805E-011 
+ VJE = 0.55 
+ MJE = 0.3288 
+ TF = 7.9E-010 
+ XTF = 3.8 
+ VTF = 1000 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 1.164E-011 
+ VJC = 0.5414 
+ MJC = 0.3995 
+ XCJC = 1 
+ TR = 2.7E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.ENDS
**
**********************************************************
*
* PBSS3540M
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 500 mA
* VCEO = 40 V 
* hFE  = min.200 @ 2V/10mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base
* Package Pin 2: Emitter  
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 3
*
***********************************************************
*#
.MODEL QPBSS3540M PNP 
+ IS = 6.269E-014 
+ NF = 0.9897 
+ ISE = 1.859E-014 
+ NE = 1.487 
+ BF = 400 
+ IKF = 0.081 
+ VAF = 2.5 
+ NR = 0.9902 
+ ISC = 3.909E-014 
+ NC = 1.193 
+ BR = 26 
+ IKR = 0.2 
+ VAR = 5.9 
+ RB = 50 
+ IRB = 0.0004 
+ RBM = 0.1 
+ RE = 0.123 
+ RC = 0.184 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.805E-011 
+ VJE = 0.55 
+ MJE = 0.3288 
+ TF = 7.9E-010 
+ XTF = 3.8 
+ VTF = 1000 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 1.164E-011 
+ VJC = 0.5414 
+ MJC = 0.3995 
+ XCJC = 1 
+ TR = 2.7E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.ENDS
**
**********************************************************
*
* PBSS4021NT
*
* NXP Semiconductors
*
* Low VCEsat (BISS) NPN transistor
* IC   = 4,3A
* VCEO = 20V
* hFE  = min. 300 @ 2V/500mA
*
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2009 
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021NT 1 2 3
*
Q1 1 2 3 PBSS4021NT
D1 2 1 DIODE
*
.MODEL PBSS4021NT NPN
+ IS = 9.204E-013
+ NF = 0.9583
+ ISE = 4.315E-014
+ NE = 1.563
+ BF = 593
+ IKF = 3.839
+ VAF = 59.69
+ NR = 0.959
+ ISC = 4.29E-014
+ NC = 1.417
+ BR = 370.5
+ IKR = 2.138
+ VAR = 40
+ RB = 48
+ IRB = 0.00077
+ RBM = 13
+ RE = 0.025
+ RC = 0.009121
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.409E-010
+ VJE = 0.7729
+ MJE = 0.3422
+ TF = 7.7E-010
+ XTF = 7
+ VTF = 1
+ ITF = 1.5
+ PTF = 0
+ CJC = 8.839E-011
+ VJC = 0.3448
+ MJC = 0.3034
+ XCJC = 1
+ TR = 5E-010
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 6.701E-015
+ N = 1.002
+ BV = 1000
+ IBV = 0.001
+ RS = 2712
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021NX
*
* NXP Semiconductors
*
* Low VCEsat  NPN (BISS) transistor
* IC   = 500 mA
* VCEO = 2 V
* hFE  = min. 300 typ. 550 @ 2V/500mA
*
*
* 
* Package: SOT89
*
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 10/2008 
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021NX 1 2 3
*
Q1 1 2 3 PBSS4021NX
D1 2 1 DIODE
*
.MODEL PBSS4021NX NPN
+ IS = 2.779E-012
+ NF = 0.979
+ ISE = 2.594E-014
+ NE = 1.313
+ BF = 664
+ IKF = 9.691
+ VAF = 27.3
+ NR = 0.9792
+ ISC = 3.388E-016
+ NC = 0.9708
+ BR = 563.8
+ IKR = 3.148
+ VAR = 21.58
+ RB = 19
+ IRB = 0.00075
+ RBM = 4.4
+ RE = 0.0182
+ RC = 0.002985
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.901E-010
+ VJE = 0.752
+ MJE = 0.3508
+ TF = 2E-009
+ XTF = 1
+ VTF = 2.5
+ ITF = 0.5
+ PTF = 0
+ CJC = 2.139E-010
+ VJC = 0.2488
+ MJC = 0.272
+ XCJC = 1
+ TR = 1.1E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.8
.MODEL DIODE D
+ IS = 2.407E-014
+ N = 1.059
+ BV = 1000
+ IBV = 0.001
+ RS = 3518
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021NZ
*
* NXP Semiconductors
*
* Low VCEsat  NPN (BISS) transistor
* IC   = 8 A
* VCEO = 20 V
* hFE  = min. 300 typ. 550 @ 2V/500mA
*
*
* 
* Package: SOT 223
*
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 50/2009 
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021NZ 1 2 3
*
Q1 1 2 3 PBSS4021NZ
D1 2 1 DIODE
*
.MODEL PBSS4021NZ NPN
+ IS = 5.279E-012
+ NF = 0.9798
+ ISE = 3.508E-013
+ NE = 1.889
+ BF = 740
+ IKF = 24
+ VAF = 50
+ NR = 0.979
+ ISC = 4.235E-014
+ NC = 1.147
+ BR = 600
+ IKR = 8
+ VAR = 15
+ RB = 12
+ IRB = 0.00065
+ RBM = 2.3
+ RE = 0.01
+ RC = 0.0032
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.411E-009
+ VJE = 0.7408
+ MJE = 0.3576
+ TF = 1.6E-009
+ XTF = 2
+ VTF = 5
+ ITF = 1
+ PTF = 0
+ CJC = 3.088E-010
+ VJC = 0.2408
+ MJC = 0.2683
+ XCJC = 1
+ TR = 6E-010
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 2.221E-015
+ N = 0.9609
+ BV = 1000
+ IBV = 0.001
+ RS = 1.356E+004
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021PT
*
* NXP Semiconductors
*
* Low VCEsat  PNP (BISS) transistor
* IC   = 3.6 A
* VCEO = 20  V 
* hFE  = 400 @ 2V/500 mA (typical)
*
*
*
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 09/2010 
* Simulator: Spice 3  
*
**********************************************************
*#
.SUBCKT PBSS4021PT 1 2 3 
*
Q1 1 2 3 PBSS4021PT 
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL PBSS4021PT PNP
+ IS = 1.119E-012
+ NF = 0.9554
+ ISE = 1.489E-013
+ NE = 1.359
+ BF = 600
+ IKF = 1.485
+ VAF = 25.43
+ NR = 0.9556
+ ISC = 3.996E-013
+ NC = 1.5
+ BR = 180
+ IKR = 0.8385
+ VAR = 11.67
+ RB = 40
+ IRB = 0.0002
+ RBM = 3.5
+ RE = 0.02932
+ RC = 0.01826
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.387E-010
+ VJE = 0.9389
+ MJE = 0.4413
+ TF = 1.18E-009
+ XTF = 5
+ VTF = 2
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.133E-010
+ VJC = 0.4478
+ MJC = 0.3242
+ XCJC = 1
+ TR = 2.2E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 7.693E-014
+ N = 1.045
+ BV = 1000
+ IBV = 0.001
+ RS = 1034
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021PX
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 6,2 A
* VCEO = 20 V
* hFE  = min. 250 typ. 400 @ 2V/500mA
* 
*
*
* Package: SOT 89
*
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 10/2008 
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021PX 1 2 3
*
Q1 1 2 3 PBSS4021PX
D1 1 2 DIODE
*
.MODEL PBSS4021PX PNP
+ IS = 2.564E-012
+ NF = 0.9892
+ ISE = 3.076E-013
+ NE = 1.356
+ BF = 411.2
+ IKF = 4.528
+ VAF = 27.3
+ NR = 0.9899
+ ISC = 2.002E-014
+ NC = 1.056
+ BR = 173.6
+ IKR = 2.64
+ VAR = 12.69
+ RB = 13.5
+ IRB = 0.001
+ RBM = 2.2
+ RE = 0.0182
+ RC = 0.009262
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.619E-010
+ VJE = 0.7893
+ MJE = 0.3914
+ TF = 2.5E-009
+ XTF = 2
+ VTF = 5
+ ITF = 2
+ PTF = 0
+ CJC = 2.627E-010
+ VJC = 0.3816
+ MJC = 0.2806
+ XCJC = 1
+ TR = 1.3E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 3.939E-013
+ N = 1.138
+ BV = 1000
+ IBV = 0.001
+ RS = 1159
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021PZ
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 6,6 A
* VCEO = 20 V
* hFE  = min. 250 typ. 400 @ 2V/500mA
* 
*
* 
* Package: SOT 223
*
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 50/2009
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021PZ 1 2 3
*
Q1 1 2 3 PBSS4021PZ
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling reverse mode
* of operation and does not reflect a physical device.
*
.MODEL PBSS4021PZ PNP
+ IS = 4.266E-012
+ NF = 0.993
+ ISE = 3.593E-013
+ NE = 1.31
+ BF = 365
+ IKF = 11
+ VAF = 30
+ NR = 0.9932
+ ISC = 2.612E-012
+ NC = 1.452
+ BR = 223
+ IKR = 1.7
+ VAR = 10
+ RB = 8.5
+ IRB = 0.001
+ RBM = 1.5
+ RE = 0.01129
+ RC = 0.00722
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.232E-009
+ VJE = 0.7835
+ MJE = 0.3966
+ TF = 2.35E-009
+ XTF = 2
+ VTF = 3
+ ITF = 0.8
+ PTF = 0
+ CJC = 3.725E-010
+ VJC = 0.3876
+ MJC = 0.2795
+ XCJC = 1
+ TR = 1.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 3.893E-013
+ N = 1.08
+ BV = 1000
+ IBV = 0.001
+ RS = 523.9
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021SN
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 7,5 A
* VCEO = 20 V
* hFE  = typ. 550 @ 2V/500mA
* 
*
*
* Package: SOT 96-1
*
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;Collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021SN 1 2 3
*
Q1 1 2 3 PBSS4021SN
D1 2 1 DIODE
*
* For simplification of schematic alternatively the 
* use of the single  transistor type PBSS4021NX is possible.
*
.MODEL PBSS4021SN NPN
+ IS = 2.779E-012
+ NF = 0.979
+ ISE = 2.594E-014
+ NE = 1.313
+ BF = 664
+ IKF = 9.691
+ VAF = 27.3
+ NR = 0.9792
+ ISC = 3.388E-016
+ NC = 0.9708
+ BR = 563.8
+ IKR = 3.148
+ VAR = 21.58
+ RB = 19
+ IRB = 0.00075
+ RBM = 4.4
+ RE = 0.0182
+ RC = 0.002985
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.901E-010
+ VJE = 0.752
+ MJE = 0.3508
+ TF = 2E-009
+ XTF = 1
+ VTF = 2.5
+ ITF = 0.5
+ PTF = 0
+ CJC = 2.139E-010
+ VJC = 0.2488
+ MJC = 0.272
+ XCJC = 1
+ TR = 1.1E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.8
.MODEL DIODE D
+ IS = 2.407E-014
+ N = 1.059
+ BV = 1000
+ IBV = 0.001
+ RS = 3518
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
* 
* PBSS4021SPN
*
* NXP Semiconductors
*
* NPN/PNP  double transistor
* Ic   = 7,5 / -6,3A
* Vceo = 20  V each
* hFE  = 550 / 400   @ 2V/500 mA (typical)
* 
*
*
* Package: SOT96-1 (SO8)
*  
* Package Pin 1;5: Emitter;Collector (Q1;Q2)
* Package Pin 2;6: Base;Collector    (Q1;Q2)
* Package Pin 3;7: Emitter;Collector (Q2;Q1)
* Package Pin 4;8: Base;Collector    (Q2;Q1)
*
* Extraction date (week/year): 08/2010 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PBSS4021SPN_NPN 1 2 3
*
Q1 1 2 3 PBSS4021SPN_NPN
D1 2 1 DIODE
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4021NX / PBSS4021PX is * possible.
*
.MODEL PBSS4021SPN_NPN NPN
+ IS = 2.779E-012
+ NF = 0.979
+ ISE = 2.594E-014
+ NE = 1.313
+ BF = 664
+ IKF = 9.691
+ VAF = 27.3
+ NR = 0.9792
+ ISC = 3.388E-016
+ NC = 0.9708
+ BR = 563.8
+ IKR = 3.148
+ VAR = 21.58
+ RB = 19
+ IRB = 0.00075
+ RBM = 4.4
+ RE = 0.0182
+ RC = 0.002985
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.901E-010
+ VJE = 0.752
+ MJE = 0.3508
+ TF = 2E-009
+ XTF = 1
+ VTF = 2.5
+ ITF = 0.5
+ PTF = 0
+ CJC = 2.139E-010
+ VJC = 0.2488
+ MJC = 0.272
+ XCJC = 1
+ TR = 1.1E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.8
.MODEL DIODE D
+ IS = 2.407E-014
+ N = 1.059
+ BV = 1000
+ IBV = 0.001
+ RS = 3518
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
*
.SUBCKT PBSS4021SPN_PNP 1 2 3
*
Q1 1 2 3 PBSS4021SPN_PNP
D1 1 2 DIODE
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4021NX / PBSS4021PX is * possible.
*
.MODEL PBSS4021SPN_PNP PNP
+ IS = 2.564E-012
+ NF = 0.9892
+ ISE = 3.076E-013
+ NE = 1.356
+ BF = 411.2
+ IKF = 4.528
+ VAF = 27.3
+ NR = 0.9899
+ ISC = 2.002E-014
+ NC = 1.056
+ BR = 173.6
+ IKR = 2.64
+ VAR = 12.69
+ RB = 13.5
+ IRB = 0.001
+ RBM = 2.2
+ RE = 0.0182
+ RC = 0.009262
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.619E-010
+ VJE = 0.7893
+ MJE = 0.3914
+ TF = 2.5E-009
+ XTF = 2
+ VTF = 5
+ ITF = 2
+ PTF = 0
+ CJC = 2.627E-010
+ VJC = 0.3816
+ MJC = 0.2806
+ XCJC = 1
+ TR = 1.3E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 3.939E-013
+ N = 1.138
+ BV = 1000
+ IBV = 0.001
+ RS = 1159
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4021SP
*
* NXP Semiconductors
*
* low VCE(sat) PNP BISS transistor
* IC   = 6,3 A
* VCEO = 20 V
* hFE  = typ. 550 @ 2V/500mA
* 
*
* 
* Package: SOT 96-1
*
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;Collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4021SP 1 2 3
*
Q1 1 2 3 PBSS4021SP
D1 1 2 DIODE
*
* For simplification of schematic alternatively the 
* use of the single  transistor type PBSS4021PX is possible.
*
.MODEL PBSS4021SP PNP
+ IS = 2.564E-012
+ NF = 0.9892
+ ISE = 3.076E-013
+ NE = 1.356
+ BF = 411.2
+ IKF = 4.528
+ VAF = 27.3
+ NR = 0.9899
+ ISC = 2.002E-014
+ NC = 1.056
+ BR = 173.6
+ IKR = 2.64
+ VAR = 12.69
+ RB = 13.5
+ IRB = 0.001
+ RBM = 2.2
+ RE = 0.0182
+ RC = 0.009262
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.619E-010
+ VJE = 0.7893
+ MJE = 0.3914
+ TF = 2.5E-009
+ XTF = 2
+ VTF = 5
+ ITF = 2
+ PTF = 0
+ CJC = 2.627E-010
+ VJC = 0.3816
+ MJC = 0.2806
+ XCJC = 1
+ TR = 1.3E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 3.939E-013
+ N = 1.138
+ BV = 1000
+ IBV = 0.001
+ RS = 1159
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4032ND
*
* NXP Semiconductors
*
* low VCE(sat) NPN BISS transistor
* IC   = 3,5 A
* VCEO = 30 V
* hFE  = min. 300 typ. 500 @ 2V/500mA
* 
*
* 
* Package: SOT 457
*
* Package Pin 1:4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 48/2009
* Simulator: Spice 2  
*
**********************************************************
*#
.MODEL QPBSS4032ND NPN
+ IS = 1.054E-012
+ NF = 0.9733
+ ISE = 4.315E-014
+ NE = 1.563
+ BF = 520
+ IKF = 3.682
+ VAF = 125.1
+ NR = 0.9723
+ ISC = 4.401E-014
+ NC = 1.65
+ BR = 4
+ IKR = 0.4758
+ VAR = 12.51
+ RB = 12.5
+ IRB = 0.00012
+ RBM = 7
+ RE = 0.03
+ RC = 0.01991
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.779E-010
+ VJE = 0.7128
+ MJE = 0.346
+ TF = 1.7E-009
+ XTF = 10
+ VTF = 0.5
+ ITF = 2.5
+ PTF = 0
+ CJC = 1.466E-010
+ VJC = 0.5865
+ MJC = 0.4179
+ XCJC = 1
+ TR = 1.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
*
* PBSS4032NT
*
* NXP Semiconductors
*
* Low VCEsat (BISS) transistor (NPN)
* IC   = 2,6A
* VCEO = 30V
* hFE  = min. 300 typ.500 @ 2V/100mA
* 
*
*  
* Package: SOT23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2009 
* Simulator: Spice 3   
*
**********************************************************
*#
.MODEL QPBSS4032NT NPN
+ IS = 7.347E-013
+ NF = 0.97
+ ISE = 4.315E-014
+ NE = 1.563
+ BF = 666
+ IKF = 2
+ VAF = 40
+ NR = 0.9676
+ ISC = 4.401E-014
+ NC = 1.65
+ BR = 4.1
+ IKR = 0.5
+ VAR = 12
+ RB = 12
+ IRB = 0.0002
+ RBM = 0.626
+ RE = 0.03312
+ RC = 0.01531
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.04E-010
+ VJE = 0.7213
+ MJE = 0.3439
+ TF = 9E-010
+ XTF = 20
+ VTF = 1
+ ITF = 1
+ PTF = 0
+ CJC = 9.811E-011
+ VJC = 0.5732
+ MJC = 0.4112
+ XCJC = 1
+ TR = 1E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4032NX
*
* Low VCEsat NPN transistor
* Ic   = 4,7 A
* Vceo = 30  V 
* hFE  = min. 300 typ. 500 @ 2V/500mA 
* 
*
* 
* Package: SOT89
*  
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 08/2010 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4032NX NPN
+ IS = 1.265E-012
+ NF = 0.9785
+ ISE = 4.446E-014
+ NE = 1.508
+ BF = 585
+ IKF = 9.5
+ VAF = 80
+ NR = 0.9775
+ ISC = 3.865E-013
+ NC = 1.541
+ BR = 4.395
+ IKR = 1.2
+ VAR = 12.51
+ RB = 12.5
+ IRB = 0.00012
+ RBM = 7
+ RE = 0.02514
+ RC = 0.01049
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.413E-010
+ VJE = 0.7065
+ MJE = 0.3445
+ TF = 1.15E-009
+ XTF = 15
+ VTF = 1.3
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.151E-010
+ VJC = 0.501
+ MJC = 0.3892
+ XCJC = 1
+ TR = 5.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
*
* PBSS4032NZ
*
* NXP Semiconductors
*
* Low VCEsat NPN transistor
* Ic   = 4,9 A
* Vceo = 30  V 
* hFE  = min. 300 typ. 500 @ 2V/0,5 A (typical)
* 
*
* 
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 03/2010 
* Simulator: Spice 3   
*
**********************************************************
*#
.MODEL QPBSS4032NZ NPN
+ IS = 1.265E-012
+ NF = 0.9785
+ ISE = 4.446E-014
+ NE = 1.508
+ BF = 585
+ IKF = 9.5
+ VAF = 80
+ NR = 0.9775
+ ISC = 3.865E-013
+ NC = 1.541
+ BR = 4.395
+ IKR = 1.2
+ VAR = 12.51
+ RB = 12.5
+ IRB = 0.00012
+ RBM = 7
+ RE = 0.02514
+ RC = 0.01049
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.413E-010
+ VJE = 0.7065
+ MJE = 0.3445
+ TF = 1.15E-009
+ XTF = 15
+ VTF = 1.3
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.151E-010
+ VJC = 0.501
+ MJC = 0.3892
+ XCJC = 1
+ TR = 5.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
*
* PBSS4032PD
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2.7A
* VCEO = 30V
* hFE  = min. 200 typ. 350 @ 2V/500mA
* 
*
* 
* Package: SOT 457
*
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 48/2009 
* Simulator: Spice 3   
*
**********************************************************
*#
.MODEL QPBSS4032PD PNP
+ IS = 1.296E-012
+ NF = 0.9717
+ ISE = 2.27E-013
+ NE = 1.398
+ BF = 449.9
+ IKF = 1.072
+ VAF = 24.13
+ NR = 0.9705
+ ISC = 2.667E-013
+ NC = 1.159
+ BR = 3.8
+ IKR = 0.7
+ VAR = 11.1
+ RB = 19
+ IRB = 0.001
+ RBM = 0.21
+ RE = 0.04575
+ RC = 0.01991
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.895E-010
+ VJE = 0.769
+ MJE = 0.3853
+ TF = 2.3E-009
+ XTF = 10
+ VTF = 1
+ ITF = 3
+ PTF = 0
+ CJC = 1.702E-010
+ VJC = 0.4209
+ MJC = 0.33
+ XCJC = 1
+ TR = 3E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7
.ENDS
**
**********************************************************
*
* PBSS4032PT
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2.4A
* VCEO = 30V
* hFE  = min. 200 typ. 320 @ 2V/100mA
* 
*
* 
* Package: SOT 23
*
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2009 
* Simulator: Spice 3   
*
**********************************************************
*#
.SUBCKT PBSS4032PT 1 2 3
*
Q1 1 2 3 PBSS4032PT
D1 1 2 DIODE
*
* Diodes is dedicated to 
* improve modeling of reverse mode of operation 
* and does not reflect a physical device.
*
.MODEL PBSS4032PT PNP
+ IS = 6.383E-013
+ NF = 0.9663
+ ISE = 5.297E-014
+ NE = 1.278
+ BF = 513
+ IKF = 0.6
+ VAF = 3.508
+ NR = 0.9635
+ ISC = 9.627E-014
+ NC = 1.103
+ BR = 4.111
+ IKR = 0.4526
+ VAR = 8
+ RB = 20
+ IRB = 5E-006
+ RBM = 0.83
+ RE = 0.01
+ RC = 0.05363
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 2.574E-010
+ VJE = 0.7477
+ MJE = 0.3725
+ TF = 1.18E-009
+ XTF = 15
+ VTF = 2
+ ITF = 3
+ PTF = 0
+ CJC = 1.153E-010
+ VJC = 0.3826
+ MJC = 0.3083
+ XCJC = 1
+ TR = 1.35E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 5.843E-015
+ N = 0.9795
+ BV = 1000
+ IBV = 0.001
+ RS = 0.001
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4032PX
*
* Low VCEsat PNP BISS transistor
* Ic   = 4,2 A
* Vceo = 30  V 
* hFE  = min. 200 typ. 350 @ 2V/500 mA 
* 
*
* 
* Package: SOT 89
*  
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
* 
*
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4032PX PNP
+ IS = 2.322E-012
+ NF = 0.9933
+ ISE = 2.048E-013
+ NE = 1.368
+ BF = 440
+ IKF = 2
+ VAF = 25
+ NR = 0.988
+ ISC = 4.615E-013
+ NC = 1.104
+ BR = 5
+ IKR = 0.5
+ VAR = 11.1
+ RB = 12.9
+ IRB = 0.00105
+ RBM = 0.96
+ RE = 0.025
+ RC = 0.02275
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 5.935E-010
+ VJE = 0.7907
+ MJE = 0.3958
+ TF = 1.53E-009
+ XTF = 5
+ VTF = 2
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.439E-010
+ VJC = 0.39
+ MJC = 0.3204
+ XCJC = 1
+ TR = 2.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
* 
* PBSS4032PZ
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* Ic   = 4,4 A
* Vceo = 30  V 
* hFE  = min. 200 typ. 350 @ 2V/0,5 A 
* 
*
* 
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 50/2009
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QPBSS4032PZ PNP
+ IS = 2.322E-012
+ NF = 0.9933
+ ISE = 2.048E-013
+ NE = 1.368
+ BF = 440
+ IKF = 2
+ VAF = 25
+ NR = 0.988
+ ISC = 4.615E-013
+ NC = 1.104
+ BR = 5
+ IKR = 0.5
+ VAR = 11.1
+ RB = 12.9
+ IRB = 0.00105
+ RBM = 0.96
+ RE = 0.025
+ RC = 0.02275
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 5.935E-010
+ VJE = 0.7907
+ MJE = 0.3958
+ TF = 1.53E-009
+ XTF = 5
+ VTF = 2
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.439E-010
+ VJC = 0.39
+ MJC = 0.3204
+ XCJC = 1
+ TR = 2.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
* 
* PBSS4032SN
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* Ic   = 4,4 A
* Vceo = 30  V 
* hFE  = typ. 500 @ 2V/0,5 A 
* 
*
* 
* Package: SOT 96-1
* 
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2010
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL QPBSS4032SN NPN
*
* For simplification of schematic alternatively the 
* use of the single  transistor type PBSS4032NZ is possible.
*
+ IS = 1.265E-012
+ NF = 0.9785
+ ISE = 4.446E-014
+ NE = 1.508
+ BF = 585
+ IKF = 9.5
+ VAF = 80
+ NR = 0.9775
+ ISC = 3.865E-013
+ NC = 1.541
+ BR = 4.395
+ IKR = 1.2
+ VAR = 12.51
+ RB = 12.5
+ IRB = 0.00012
+ RBM = 7
+ RE = 0.02514
+ RC = 0.01049
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.413E-010
+ VJE = 0.7065
+ MJE = 0.3445
+ TF = 1.15E-009
+ XTF = 15
+ VTF = 1.3
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.151E-010
+ VJC = 0.501
+ MJC = 0.3892
+ XCJC = 1
+ TR = 5.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
* 
* PBSS4032SPN
*
* NXP Semiconductors
*
* Low VCEsat NPN/PNP double transistor
* Ic   = 5,7 A
* Vceo = 30  V 
* hFE  = min. 400 typ. 350 @ 2V/0,5 A 
*
*
*
* Package: SOT 96-1
* 
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3 
*
**********************************************************
*#
.SUBCKT PBSS4032SPN_NPN 1 2 3
*
Q1 1 2 3 PBSS4032SPN_NPN
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4032NZ / PBSS4032PZ 
* is possible.
*
+
.MODEL PBSS4032SPN_NPN NPN
+ IS = 1.265E-012
+ NF = 0.9785
+ ISE = 4.446E-014
+ NE = 1.508
+ BF = 585
+ IKF = 9.5
+ VAF = 80
+ NR = 0.9775
+ ISC = 3.865E-013
+ NC = 1.541
+ BR = 4.395
+ IKR = 1.2
+ VAR = 12.51
+ RB = 12.5
+ IRB = 0.00012
+ RBM = 7
+ RE = 0.02514
+ RC = 0.01049
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.413E-010
+ VJE = 0.7065
+ MJE = 0.3445
+ TF = 1.15E-009
+ XTF = 15
+ VTF = 1.3
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.151E-010
+ VJC = 0.501
+ MJC = 0.3892
+ XCJC = 1
+ TR = 5.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
*
.SUBCKT PBSS4032SPN_PNP 1 2 3
*
Q1 1 2 3 PBSS4032SPN_PNP
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4032NZ / PBSS4032PZ 
* is possible.
*
.MODEL PBSS4032SPN_PNP PNP
+ IS = 2.322E-012
+ NF = 0.9933
+ ISE = 2.048E-013
+ NE = 1.368
+ BF = 440
+ IKF = 2
+ VAF = 25
+ NR = 0.988
+ ISC = 4.615E-013
+ NC = 1.104
+ BR = 5
+ IKR = 0.5
+ VAR = 11.1
+ RB = 12.9
+ IRB = 0.00105
+ RBM = 0.96
+ RE = 0.025
+ RC = 0.02275
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 5.935E-010
+ VJE = 0.7907
+ MJE = 0.3958
+ TF = 1.53E-009
+ XTF = 5
+ VTF = 2
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.439E-010
+ VJC = 0.39
+ MJC = 0.3204
+ XCJC = 1
+ TR = 2.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
* 
* PBSS4032SP
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* Ic   = 4,4 A
* Vceo = 30  V 
* hFE  = typ. 350 @ 2V/0,5 A 
* 
*
* 
* Package: SOT 96-1
* 
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (Year/Week): 10/2008
* Simulator: Spice 3 
*
**********************************************************
*#
.MODEL PBSS4032SP PNP
*
* For simplification of schematic alternatively the 
* use of the single  transistor type PBSS4032PZ is possible.
*
+ IS = 2.322E-012
+ NF = 0.9933
+ ISE = 2.048E-013
+ NE = 1.368
+ BF = 440
+ IKF = 2
+ VAF = 25
+ NR = 0.988
+ ISC = 4.615E-013
+ NC = 1.104
+ BR = 5
+ IKR = 0.5
+ VAR = 11.1
+ RB = 12.9
+ IRB = 0.00105
+ RBM = 0.96
+ RE = 0.025
+ RC = 0.02275
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 5.935E-010
+ VJE = 0.7907
+ MJE = 0.3958
+ TF = 1.53E-009
+ XTF = 5
+ VTF = 2
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.439E-010
+ VJC = 0.39
+ MJC = 0.3204
+ XCJC = 1
+ TR = 2.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.ENDS
**
**********************************************************
*
* NXP Semiconductors
* 
* PBSS4041NT
*
* Low VCEsat NPN transistor
* Ic   = 3.1 A
* Vceo = 60  V 
* hFE  = 500 @ 2V/500 mA (typical)
* 
*
*
* Package: SOT23
*
* Package Pin 1: Emitter
* Package Pin 2: Base
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 12/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041NT 1 2 3 
*
Q1 1 2 3 PBSS4041NT
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device
*
.MODEL PBSS4041NT NPN
+ IS = 1.183E-012
+ NF = 0.9583
+ ISE = 4.315E-014
+ NE = 1.563
+ BF = 650
+ IKF = 1.327
+ VAF = 36.13
+ NR = 0.9579
+ ISC = 3.734E-013
+ NC = 2.056
+ BR = 246.5
+ IKR = 0.6996
+ VAR = 22.7
+ RB = 38
+ IRB = 0.0003955
+ RBM = 3.5
+ RE = 0.02261
+ RC = 0.01545
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.258E-010
+ VJE = 0.7793
+ MJE = 0.3462
+ TF = 7E-010
+ XTF = 7
+ VTF = 1
+ ITF = 1.5
+ PTF = 0
+ CJC = 5.664E-011
+ VJC = 0.6216
+ MJC = 0.4707
+ XCJC = 1
+ TR = 5.6E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 3.586E-014
+ N = 0.958
+ BV = 1000
+ IBV = 0.001
+ RS = 1034
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041NX
*
* low VCEsat NPN BISS transistor
* Ic   = 6,2 A
* Vceo = 60  V 
* hFE  = min. 300 typ. 500 @ 2V/500 mA 
* 
*  
* 
* Package: SOT 89
*  
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041NX 1 2 3
*
Q1 1 2 3 PBSS4041NX
D1 2 1 DIODE
*
* The diode does not reflect a physical 
* device but improves only modeling in
* the reverse mode of operation.
*
.MODEL PBSS4041NX NPN
+ IS = 2.699E-012
+ NF = 0.9827
+ ISE = 5.649E-014
+ NE = 1.387
+ BF = 730
+ IKF = 2.123
+ VAF = 7.318
+ NR = 0.982
+ ISC = 5.895E-017
+ NC = 0.9708
+ BR = 300
+ IKR = 2.298
+ VAR = 21.58
+ RB = 20
+ IRB = 0.0006
+ RBM = 3.3
+ RE = 0.018
+ RC = 0.007
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.356E-010
+ VJE = 0.7562
+ MJE = 0.3541
+ TF = 1.5E-009
+ XTF = 7
+ VTF = 1.1
+ ITF = 2
+ PTF = 0
+ CJC = 1.388E-010
+ VJC = 0.4612
+ MJC = 0.4336
+ XCJC = 1
+ TR = 3.6E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 2.758E-013
+ N = 0.9906
+ BV = 1000
+ IBV = 0.001
+ RS = 2555
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041NZ
*
* low VCEsat NPN BISS transistor
* Ic   = 7 A
* Vceo = 60  V 
* hFE  = min. 300 typ. 500 @ 2V/500 mA 
* 
* 
*
* Package: SOT 223
*  
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 50/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041NZ 1 2 3
*
* Diodes D1, Transistor Q2 and Resistor R1 are 
* dedicated to improve modeling of quasisaturation and 
* reverse mode* of operation and does not reflect 
* physical devices.
*
Q1 1 2 3 MAIN1 
Q2 11 2 3 MAIN2
RQ 11 1 4.415
D1 2 1 DIODE
*
.MODEL MAIN1 NPN
+ IS = 4.385793E-12
+ NF = 9.798000E-01
+ ISE = 3.693737E-14
+ NE = 1.335000E+00
+ BF = 8.600000E+02
+ IKF = 1.412360E+01
+ VAF = 9.000000E+01
+ NR = 9.793000E-01
+ ISC = 3.518438E-14
+ NC = 1.147000E+00
+ BR = 2.936000E+02
+ IKR = 3.323200E+00
+ VAR = 2.500000E+01
+ RB = 1.444391E+01
+ IRB = 4.984800E-04
+ RBM = 1.564757E+00
+ RE = 1.190660E-02
+ RC = 5.193789E-03
+ XTB = 0.000000E+00
+ EG = 1.110000E+00
+ XTI = 3.000000E+00
+ CJE = 1.105795E-09
+ VJE = 7.470000E-01
+ MJE = 3.633000E-01
+ TF  = 1.200000E-09
+ XTF = 4.000000E+00
+ VTF = 2.000000E+00
+ ITF = 1.661600E+00
+ PTF = 0.000000E+00
+ CJC = 1.644153E-10
+ VJC = 5.623000E-01
+ MJC = 4.671000E-01
+ XCJC =1.000000E+00
+ TR  = 5.500000E-09
+ CJS = 0.000000E+00
+ VJS = 7.500000E-01
+ MJS = 3.330000E-01
+ FC  = 9.000000E-01
*
.MODEL MAIN2 NPN
+ IS = 8.93207E-13
+ NF = 9.798000E-01
+ ISE = 7.522632E-15
+ NE = 1.335000E+00
+ BF = 8.600000E+02
+ IKF = 2.876400E+00
+ VAF = 9.000000E+01
+ NR = 9.793000E-01
+ ISC = 7.165620E-15
+ NC = 1.147000E+00
+ BR = 2.936000E+02
+ IKR = 6.768000E-01
+ VAR = 2.500000E+01
+ RB = 7.092199E+01
+ IRB = 1.015200E-04
+ RBM = 7.683215E+00
+ RE = 5.846336E-02
+ RC = 2.550236E-02
+ XTB = 0.000000E+00
+ EG = 1.110000E+00
+ XTI = 3.000000E+00
+ CJE = 2.252052E-10
+ VJE = 7.470000E-01
+ MJE = 3.633000E-01
+ TF  = 1.200000E-09
+ XTF = 4.000000E+00
+ VTF = 2.000000E+00
+ ITF = 3.384000E-01
+ PTF = 0.000000E+00
+ CJC = 3.348468E-11
+ VJC = 5.623000E-01
+ MJC = 4.671000E-01
+ XCJC =1.000000E+00
+ TR  = 5.500000E-09
+ CJS = 0.000000E+00
+ VJS = 7.500000E-01
+ MJS = 3.330000E-01
+ FC  = 9.000000E-01
.MODEL DIODE D
+ IS = 7.528E-014
+ N = 0.9892
+ BV = 1000
+ IBV = 0.001
+ RS = 542.4
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041PT
*
* low VCEsat PNP BISS transistor
* Ic   = 2,7 A
* Vceo = 60  V 
* hFE  = min. 200 typ. 300 @ 2V/500 mA 
* 
*
*
* Package: SOT 23
*  
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041PT 1 2 3
*
* Diodes D1/D2, transistor Q2 and resistor RQ are dedicated to 
* improve modeling of reverse mode of operation and quasi saturation 
* and do not reflect physical devices.
*
Q1 1 2 3 PBSS4041PT 0.671
Q2 11 2 3 PBSS4041PT 0.329
RQ 11 1 2.447
D1 1 2 DIODE
D2 11 2 DIODE
*
.MODEL PBSS4041PT PNP
+ IS = 5.362E-013
+ NF = 0.9476
+ ISE = 6.073E-014
+ NE = 1.266
+ BF = 328.4
+ IKF = 1.6
+ VAF = 20
+ NR = 0.9477
+ ISC = 2.667E-013
+ NC = 1.159
+ BR = 61
+ IKR = 1.7
+ VAR = 11.1
+ RB = 29
+ IRB = 0.00075
+ RBM = 4.49
+ RE = 0.03208
+ RC = 0.009661
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.1E-010
+ VJE = 0.7847
+ MJE = 0.3759
+ TF = 1.2E-009
+ XTF = 5
+ VTF = 1.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.244E-010
+ VJC = 0.7147
+ MJC = 0.4278
+ XCJC = 1
+ TR = 8.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 7.233E-015
+ N = 0.9041
+ BV = 1000
+ IBV = 0.001
+ RS = 658.3
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041PX
*
* low VCEsat PNP BISS transistor
* Ic   = 5 A
* Vceo = 60  V 
* hFE  = min. 200 typ. 300 @ 2V/500 mA 
* 
*
*
* Package: SOT 89
*  
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041PX 1 2 3
*
Q1 1 2 3 PBSS4041PX
D1 1 2 DIODE
*
* The diode does not reflect a physical 
* device but improves only modeling in
* the reverse mode of operation.
*
.MODEL PBSS4041PX PNP
+ IS = 2.822E-012
+ NF = 0.9985
+ ISE = 3.046E-013
+ NE = 1.355
+ BF = 300
+ IKF = 5.139
+ VAF = 37.07
+ NR = 0.9988
+ ISC = 4.545E-016
+ NC = 0.9993
+ BR = 73
+ IKR = 1.889
+ VAR = 30.16
+ RB = 12
+ IRB = 0.0008
+ RBM = 2.6
+ RE = 0.023
+ RC = 0.01586
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.384E-010
+ VJE = 0.7639
+ MJE = 0.3785
+ TF = 2.5E-009
+ XTF = 5
+ VTF = 1
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.742E-010
+ VJC = 0.723
+ MJC = 0.4255
+ XCJC = 1
+ TR = 7.2E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 6.201E-013
+ N = 1.092
+ BV = 1000
+ IBV = 0.001
+ RS = 964.8
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041PZ
*
* low VCEsat PNP BISS transistor
* Ic   = 5,7 A
* Vceo = 60  V 
* hFE  = min. 200 typ. 300 @ 2V/500 mA 
* 
*
*
* Package: SOT 223
*  
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 50/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041PZ 1 2 3
*
* Diode D1 , transistor Q2 and  resistor RQ are dedicated 
* to improve modeling of quasi saturation and reverse mode
* of operation and do not reflect physical devices.
*
Q1 1 2 3 PBSS4041PZ 0.8957
Q2 11 2 3 PBSS4041PZ 0.1043
RQ 11 1 2.527
D1 1 2 DIODE
*
.MODEL PBSS4041PZ PNP
+ IS = 2.557E-012
+ NF = 0.9879
+ ISE = 1.139E-013
+ NE = 1.244
+ BF = 328.4
+ IKF = 13.62
+ VAF = 32.06
+ NR = 0.9849
+ ISC = 4.351E-013
+ NC = 1.205
+ BR = 101
+ IKR = 3
+ VAR = 11.1
+ RB = 45
+ IRB = 1E-005
+ RBM = 1.3
+ RE = 0.01192
+ RC = 0.0095
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.1E-010
+ VJE = 0.7847
+ MJE = 0.3759
+ TF = 2.1E-009
+ XTF = 5
+ VTF = 1.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.244E-010
+ VJC = 0.7147
+ MJC = 0.4278
+ XCJC = 1
+ TR = 4.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 4.943E-014
+ N = 0.9705
+ BV = 1000
+ IBV = 0.001
+ RS = 3144
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041SN
*
* low VCEsat NPN BISS transistor
* Ic   = 6,7 A
* Vceo = 60  V 
* hFE  = typ. 500 @ 2V/500 mA 
* 
*
*
* Package: SOT 96-1
*  
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041SN 1 2 3
*
* For simplification of schematic alternatively the 
* use of the single  transistor type PBSS4041NX is possible.
*
Q1 1 2 3 PBSS4041SN
D1 2 1 DIODE
*
.MODEL PBSS4041SN NPN
+ IS = 2.699E-012
+ NF = 0.9827
+ ISE = 5.649E-014
+ NE = 1.387
+ BF = 730
+ IKF = 2.123
+ VAF = 7.318
+ NR = 0.982
+ ISC = 5.895E-017
+ NC = 0.9708
+ BR = 300
+ IKR = 2.298
+ VAR = 21.58
+ RB = 20
+ IRB = 0.0006
+ RBM = 3.3
+ RE = 0.018
+ RC = 0.007
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.356E-010
+ VJE = 0.7562
+ MJE = 0.3541
+ TF = 1.5E-009
+ XTF = 7
+ VTF = 1.1
+ ITF = 2
+ PTF = 0
+ CJC = 1.388E-010
+ VJC = 0.4612
+ MJC = 0.4336
+ XCJC = 1
+ TR = 3.6E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 2.758E-013
+ N = 0.9906
+ BV = 1000
+ IBV = 0.001
+ RS = 2555
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041SP
*
* low VCEsat NPN/PNP BISS transistor
* Ic   = 6,7 A
* Vceo = 60  V 
* hFE  = min. 300 typ. 500 @ 2V/500 mA 
* 
*
*
* Package: SOT 96-1
*  
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041SPN_NPN 1 2 3
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4041NX / PBSS4041PX is * possible.
*
Q 1 2 3 PBSS4041SPN_NPN
D 2 1 DIODE
*
.MODEL PBSS4041SPN_NPN NPN
+ IS = 2.699E-012
+ NF = 0.9827
+ ISE = 5.649E-014
+ NE = 1.387
+ BF = 730
+ IKF = 2.123
+ VAF = 7.318
+ NR = 0.982
+ ISC = 5.895E-017
+ NC = 0.9708
+ BR = 300
+ IKR = 2.298
+ VAR = 21.58
+ RB = 20
+ IRB = 0.0006
+ RBM = 3.3
+ RE = 0.018
+ RC = 0.007
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.356E-010
+ VJE = 0.7562
+ MJE = 0.3541
+ TF = 1.5E-009
+ XTF = 7
+ VTF = 1.1
+ ITF = 2
+ PTF = 0
+ CJC = 1.388E-010
+ VJC = 0.4612
+ MJC = 0.4336
+ XCJC = 1
+ TR = 3.6E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 2.758E-013
+ N = 0.9906
+ BV = 1000
+ IBV = 0.001
+ RS = 2555
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
*
.SUBCKT PBSS4041SPN_PNP 1 2 3
*
* For simplification of schematic alternatively the 
* use of single transistor types PBSS4041NX / PBSS4041PX is * possible.
*
Q 1 2 3 PBSS4041SPN_PNP
D 1 2 DIODE
*
.MODEL PBSS4041SPN_PNP PNP
+ IS = 2.822E-012
+ NF = 0.9985
+ ISE = 3.046E-013
+ NE = 1.355
+ BF = 300
+ IKF = 5.139
+ VAF = 37.07
+ NR = 0.9988
+ ISC = 4.545E-016
+ NC = 0.9993
+ BR = 73
+ IKR = 1.889
+ VAR = 30.16
+ RB = 12
+ IRB = 0.0008
+ RBM = 2.6
+ RE = 0.023
+ RC = 0.01586
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.384E-010
+ VJE = 0.7639
+ MJE = 0.3785
+ TF = 2.5E-009
+ XTF = 5
+ VTF = 1
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.742E-010
+ VJC = 0.723
+ MJC = 0.4255
+ XCJC = 1
+ TR = 7.2E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 6.201E-013
+ N = 1.092
+ BV = 1000
+ IBV = 0.001
+ RS = 964.8
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4041SP
*
* low VCEsat NPN BISS transistor
* Ic   = 6,7 A
* Vceo = 60  V 
* hFE  = typ. 500 @ 2V/500 mA 
* 
*
*
* Package: SOT 96-1
*  
* Package Pin 1;5: Emitter;Collector
* Package Pin 2;6: Base;collector
* Package Pin 3;7: Emitter;Collector
* Package Pin 4;8: Base;Collector
*
* Extraction date (week/year): 10/2008
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4041SP 1 2 3
*
*For simplification of schematic alternatively the 
*use of the single  transistor type PBSS4041PX is possible.
*
Q1 1 2 3 PBSS4041SP
D1 2 1 DIODE
*
.MODEL PBSS4041SP NPN
+ IS = 2.822E-012
+ NF = 0.9985
+ ISE = 3.046E-013
+ NE = 1.355
+ BF = 300
+ IKF = 5.139
+ VAF = 37.07
+ NR = 0.9988
+ ISC = 4.545E-016
+ NC = 0.9993
+ BR = 73
+ IKR = 1.889
+ VAR = 30.16
+ RB = 12
+ IRB = 0.0008
+ RBM = 2.6
+ RE = 0.023
+ RC = 0.01586
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.384E-010
+ VJE = 0.7639
+ MJE = 0.3785
+ TF = 2.5E-009
+ XTF = 5
+ VTF = 1
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.742E-010
+ VJC = 0.723
+ MJC = 0.4255
+ XCJC = 1
+ TR = 7.2E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 6.201E-013
+ N = 1.092
+ BV = 1000
+ IBV = 0.001
+ RS = 964.8
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4120T
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 20 V 
* hFE  = min. 350 typ. 470 @ 2V/100 mA 
* 
*
*
* Package: SOT 23
*  
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4120T NPN 
+ IS = 3.984E-013 
+ NF = 0.957 
+ ISE = 3.127E-015 
+ NE = 1.187 
+ BF = 570 
+ IKF = 2.8 
+ VAF = 88 
+ NR = 0.9615 
+ ISC = 1.253E-013 
+ NC = 1.35 
+ BR = 90.88 
+ IKR = 3800 
+ VAR = 10.6 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 9.392 
+ RE = 0.08 
+ RC = 0.0305 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.639E-010 
+ VJE = 0.7555 
+ MJE = 0.364 
+ TF = 5.8E-010 
+ XTF = 9 
+ VTF = 1.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 5.076E-011 
+ VJC = 0.7 
+ MJC = 0.465 
+ XCJC = 1 
+ TR = 1.22E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4130T
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 30 V 
* hFE  = min. 350 typ. 470 @ 2V/100 mA 
* 
*
*
* Package: SOT 23
*  
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 48/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4130T NPN 
+ IS = 3.984E-013 
+ NF = 0.957 
+ ISE = 3.127E-015 
+ NE = 1.187 
+ BF = 570 
+ IKF = 2.8 
+ VAF = 88 
+ NR = 0.9615 
+ ISC = 1.253E-013 
+ NC = 1.35 
+ BR = 90.88 
+ IKR = 3800 
+ VAR = 10.6 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 9.392 
+ RE = 0.08 
+ RC = 0.0305 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.639E-010 
+ VJE = 0.7555 
+ MJE = 0.364 
+ TF = 5.8E-010 
+ XTF = 9 
+ VTF = 1.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 5.076E-011 
+ VJC = 0.7 
+ MJC = 0.465 
+ XCJC = 1 
+ TR = 1.22E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4140DPN
*
* low VCEsat NPN/PNP transistor
* Ic   = 1 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/1A 
* 
*
* 
* Package: SOT 457
*  
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
* 
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PBSS4140DPN_NPN 1 2 3
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
Q 1 2 3 PBSS4140DPN_NPN 
D 2 1 DIODE
*
.MODEL PBSS4140DPN_NPN  NPN
+ IS = 1.933E-13 
+ NF = 0.9751 
+ ISE = 5.906E-16 
+ NE = 1.2 
+ BF = 441.7 
+ IKF = 5.05 
+ VAF = 85 
+ NR = 0.9739 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 81 
+ IKR = 0.5 
+ VAR = 12 
+ RB = 80 
+ IRB = 3E-05 
+ RBM = 0.6 
+ RE = 0.129 
+ RC = 0.14 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.021E-10 
+ VJE = 0.5499 
+ MJE = 0.3105 
+ TF = 4E-10 
+ XTF = 9 
+ VTF = 3 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 2.134E-11 
+ VJC = 0.6106 
+ MJC = 0.4466 
+ XCJC = 1 
+ TR = 2.1E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9485 
.MODEL DIODE D 
+ IS = 5E-15 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*
.SUBCKT PBSS4140DPN_PNP 1 2 3
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
Q 1 2 3 PBSS4140DPN_PNP 
*
.MODEL PBSS4140DPN_PNP PNP
+ IS = 2.837E-13 
+ NF = 0.9839 
+ ISE = 1.071E-14 
+ NE = 1.221 
+ BF = 577.3 
+ IKF = 0.56 
+ VAF = 28 
+ NR = 0.982 
+ ISC = 6.577E-14 
+ NC = 1.123 
+ BR = 121 
+ IKR = 0.2 
+ VAR = 10 
+ RB = 21 
+ IRB = 0.00019 
+ RBM = 0.2 
+ RE = 0.11 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.276E-11 
+ VJE = 0.819 
+ MJE = 0.4077 
+ TF = 6.5E-10 
+ XTF = 5 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.252E-11 
+ VJC = 0.803 
+ MJC = 0.4962 
+ XCJC = 1 
+ TR = 1.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4140T
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/500mA 
* 
*
* 
* Package: SOT 23
*  
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PBSS4140T 1 2 3
*
Q1 1 2 3 PBSS4140T
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4140T NPN 
+ IS = 1.933E-13 
+ NF = 0.9751 
+ ISE = 5.906E-16 
+ NE = 1.2 
+ BF = 441.7 
+ IKF = 5.05 
+ VAF = 85 
+ NR = 0.9739 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 81 
+ IKR = 0.5 
+ VAR = 12 
+ RB = 80 
+ IRB = 3E-05 
+ RBM = 0.6 
+ RE = 0.129 
+ RC = 0.14 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.021E-10 
+ VJE = 0.5499 
+ MJE = 0.3105 
+ TF = 4E-10 
+ XTF = 9 
+ VTF = 3 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 2.134E-11 
+ VJC = 0.6106 
+ MJC = 0.4466 
+ XCJC = 1 
+ TR = 2.1E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9485 
.MODEL DIODE D 
+ IS = 5E-15 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4140U
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/500mA 
* 
*
*
* Package: SOT 323
*  
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PBSS4140U 1 2 3
*
Q1 1 2 3 PBSS4140U 
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4140U NPN 
+ IS = 1.933E-13 
+ NF = 0.9751 
+ ISE = 5.906E-16 
+ NE = 1.2 
+ BF = 441.7 
+ IKF = 5.05 
+ VAF = 85 
+ NR = 0.9739 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 81 
+ IKR = 0.5 
+ VAR = 12 
+ RB = 80 
+ IRB = 3E-05 
+ RBM = 0.6 
+ RE = 0.129 
+ RC = 0.14 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.021E-10 
+ VJE = 0.5499 
+ MJE = 0.3105 
+ TF = 4E-10 
+ XTF = 9 
+ VTF = 3 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 2.134E-11 
+ VJC = 0.6106 
+ MJC = 0.4466 
+ XCJC = 1 
+ TR = 2.1E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9485 
.MODEL DIODE D 
+ IS = 5E-15 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4140V
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/500mA 
* 
*
*
* Package: SOT 666
*  
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4140V NPN
+ IS = 1.967E-13
+ NF = 0.9876
+ ISE = 1.999E-13
+ NE = 2.5
+ BF = 480
+ IKF = 1
+ VAF = 85
+ NR = 0.9878
+ ISC = 1E-18
+ NC = 2.563
+ BR = 65
+ IKR = 5.5
+ VAR = 12
+ RB = 80
+ IRB = 3E-05
+ RBM = 0.6
+ RE = 0.053
+ RC = 0.073
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.158E-10
+ VJE = 0.5499
+ MJE = 0.3105
+ TF = 4.5E-10
+ XTF = 9
+ VTF = 3
+ ITF = 0.8
+ PTF = 0
+ CJC = 2.146E-11
+ VJC = 0.739
+ MJC = 0.4495
+ XCJC = 1
+ TR = 1.5E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4160DPN
*
* low VCEsat NPN/PNP BISS transistor
* Ic   = 1 A
* Vceo = 60 V 
* hFE  = min. 250 typ.500  @ 5V/1mA 
* 
*
*
* Package: SOT 457
*  
* Package Pin 1;4: Emitter TR1;TR2
* Package Pin 2;5: Base TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4160DPN_NPN 1 2 3
*
Q 1 2 3 PBSS4160DS_NPN
D 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4160DS_NPN NPN 
+ IS = 1.831E-013 
+ NF = 0.9823 
+ ISE = 3.486E-015 
+ NE = 1.336 
+ BF = 490 
+ IKF = 0.15 
+ VAF = 10 
+ NR = 0.9825 
+ ISC = 1E-018 
+ NC = 1.821 
+ BR = 50 
+ IKR = 1.5 
+ VAR = 18 
+ RB = 19 
+ IRB = 0.00043 
+ RBM = 1.7 
+ RE = 0.025 
+ RC = 0.125 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.115E-010 
+ VJE = 0.57 
+ MJE = 0.308 
+ TF = 4.8E-010 
+ XTF = 8 
+ VTF = 1.5 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 1.893E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 4.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 8E-015 
+ N = 0.98 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 850 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3
.ENDS
*
.SUBCKT PBSS4160DPN_PNP 1 2 3
*
Q 1 2 3 PBSS5160DS_PNP
D 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS5160DS_PNP PNP 
+ IS = 1.695E-013 
+ NF = 0.9919 
+ ISE = 1.5E-014 
+ NE = 1.348 
+ BF = 370 
+ IKF = 0.4 
+ VAF = 40 
+ NR = 0.9912 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 30 
+ IKR = 0.4 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 1.12 
+ RE = 0.06 
+ RC = 0.105 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.466E-011 
+ VJE = 0.8044 
+ MJE = 0.3919 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 1.1 
+ ITF = 1.35 
+ PTF = 0 
+ CJC = 3.162E-011 
+ VJC = 0.7543 
+ MJC = 0.4479 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D
+ IS = 1.651E-014 
+ N = 1.079 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4160DS
*
* low VCEsat NPN/NPN BISS transistor
* Ic   = 1 A
* Vceo = 60 V 
* hFE  = min. 250 typ.500  @ 5V/1mA 
* 
*
* 
* Package: SOT 457
*  
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 40/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4160DS 1 2 3
*
Q 1 2 3 PBSS4160DS
D 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4160DS NPN 
+ IS = 1.831E-013 
+ NF = 0.9823 
+ ISE = 3.486E-015 
+ NE = 1.336 
+ BF = 490 
+ IKF = 0.15 
+ VAF = 10 
+ NR = 0.9825 
+ ISC = 1E-018 
+ NC = 1.821 
+ BR = 50 
+ IKR = 1.5 
+ VAR = 18 
+ RB = 19 
+ IRB = 0.00043 
+ RBM = 1.7 
+ RE = 0.025 
+ RC = 0.125 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.115E-010 
+ VJE = 0.57 
+ MJE = 0.308 
+ TF = 4.8E-010 
+ XTF = 8 
+ VTF = 1.5 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 1.893E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 4.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 8E-015 
+ N = 0.98 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 850 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4160T
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 60 V 
* hFE  = min. 250 typ.400  @ 5V/1mA 
* 
*
*
* Package: SOT 23
*  
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4160T 1 2 3
*
Q1 1 2 3 PBSS4160T
D1 2 1 DIODE
*
.MODEL PBSS4160T NPN 
+ IS = 1.829E-013 
+ NF = 0.9897 
+ ISE = 3.547E-015 
+ NE = 1.376 
+ BF = 420 
+ IKF = 0.3 
+ VAF = 65 
+ NR = 0.987 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 50 
+ IKR = 1.1 
+ VAR = 18 
+ RB = 15 
+ IRB = 0.0006 
+ RBM = 2.3 
+ RE = 0.055 
+ RC = 0.114 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.157E-010 
+ VJE = 0.55 
+ MJE = 0.303 
+ TF = 5E-010 
+ XTF = 8 
+ VTF = 1.5 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 1.893E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 4.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 6E-015 
+ N = 0.9606 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 938.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4160U
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 60 V 
* hFE  = min. 250 typ. 500 @ 5V/1mA 
* 
*
* 
* Package: SOT 323
*  
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 39/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4160U 1 2 3 
*
Q1 1 2 3 PBSS4160U 
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4160U NPN 
+ IS = 1.831E-013 
+ NF = 0.9823 
+ ISE = 3.486E-015 
+ NE = 1.336 
+ BF = 490 
+ IKF = 0.15 
+ VAF = 10 
+ NR = 0.9825 
+ ISC = 1E-018 
+ NC = 1.821 
+ BR = 50 
+ IKR = 1.5 
+ VAR = 18 
+ RB = 19 
+ IRB = 0.00043 
+ RBM = 1.7 
+ RE = 0.055 
+ RC = 0.125 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.115E-010 
+ VJE = 0.57 
+ MJE = 0.308 
+ TF = 4.8E-010 
+ XTF = 8 
+ VTF = 1.5 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 1.893E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 4.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 8E-015 
+ N = 0.98 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 850 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4160V
*
* low VCEsat NPN BISS transistor
* Ic   = 1 A
* Vceo = 60 V 
* hFE  = min. 250 typ. 400 @ 5V/1mA 
* 
*
* 
* Package: SOT 666
*  
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collectorr
*
* 
*
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4160V 1 2 3
* 
Q1 1 2 3 PBSS4160V
D1 2 1 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS4160V NPN 
+ IS = 1.829E-013 
+ NF = 0.9897 
+ ISE = 3.547E-015 
+ NE = 1.376 
+ BF = 420 
+ IKF = 0.3 
+ VAF = 65 
+ NR = 0.987 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 50 
+ IKR = 1.1 
+ VAR = 18 
+ RB = 15 
+ IRB = 0.0006 
+ RBM = 2.3 
+ RE = 0.055 
+ RC = 0.114 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.157E-010 
+ VJE = 0.55 
+ MJE = 0.303 
+ TF = 5E-010 
+ XTF = 8 
+ VTF = 1.5 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 1.893E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 4.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 6E-015 
+ N = 0.9606 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 938.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4220V
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 20 V 
* hFE  = min. 220 typ. 480 @ 2V/1mA 
* 
*
* 
* Package: SOT 666
*  
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 38/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4220V 1 2 3
*
Q1 1 2 3 PBSS4220V
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4220V NPN 
+ IS = 1.991E-013 
+ NF = 0.9811 
+ ISE = 1.056E-014 
+ NE = 1.66 
+ BF = 470 
+ IKF = 2.2 
+ VAF = 60 
+ NR = 0.9831 
+ ISC = 1E-015 
+ NC = 1.038 
+ BR = 300 
+ IKR = 0.95 
+ VAR = 11.5 
+ RB = 29.9 
+ IRB = 0.0009 
+ RBM = 5.3 
+ RE = 0.08 
+ RC = 0.065 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.142E-010 
+ VJE = 0.7198 
+ MJE = 0.3487 
+ TF = 7.8E-010 
+ XTF = 2.8 
+ VTF = 0.9 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 2.265E-011 
+ VJC = 0.7076 
+ MJC = 0.22 
+ XCJC = 1 
+ TR = 8.5E-010 
+ CJS = 0 
+ VJS = 0.8 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D 
+ IS = 2.702E-015 
+ N = 1.001 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1700 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4230T
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 30 V 
* hFE  = min. 350 typ. 470 @ 2V/100mA 
* 
*
* 
* Package: SOT 23
*  
* Package Pin 1: Collector 
* Package Pin 2: Base 
* Package Pin 3: Emitter
*
*
* Extraction date (week/year): 48/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4230T NPN 
+ IS = 3.984E-013 
+ NF = 0.957 
+ ISE = 3.127E-015 
+ NE = 1.187 
+ BF = 570 
+ IKF = 2.8 
+ VAF = 88 
+ NR = 0.9615 
+ ISC = 1.253E-013 
+ NC = 1.35 
+ BR = 90.88 
+ IKR = 3800 
+ VAR = 10.6 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 9.392 
+ RE = 0.08 
+ RC = 0.0305 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.639E-010 
+ VJE = 0.7555 
+ MJE = 0.364 
+ TF = 5.8E-010 
+ XTF = 9 
+ VTF = 1.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 5.076E-011 
+ VJC = 0.7 
+ MJC = 0.465 
+ XCJC = 1 
+ TR = 1.22E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4240DPN
*
* low VCEsat NPN/PNP BISS transistor
* Ic   = max. 1,35 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/500mA 
* 
*
* 
* Package: SOT 457
*  
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 10/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4240DPN_NPN 1 2 3
*
Q1 1 2 3 PBSS4240DPN_NPN
*
.MODEL PBSS4240DPN_NPN NPN
+ IS = 1.967E-13
+ NF = 0.9876
+ ISE = 1.999E-13
+ NE = 2.5
+ BF = 480
+ IKF = 1
+ VAF = 85
+ NR = 0.9878
+ ISC = 1E-18
+ NC = 2.563
+ BR = 65
+ IKR = 5.5
+ VAR = 12
+ RB = 80
+ IRB = 3E-05
+ RBM = 0.6
+ RE = 0.051
+ RC = 0.073
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.158E-10
+ VJE = 0.5499
+ MJE = 0.3105
+ TF = 4.5E-10
+ XTF = 9
+ VTF = 3
+ ITF = 0.8
+ PTF = 0
+ CJC = 2.146E-11
+ VJC = 0.739
+ MJC = 0.4495
+ XCJC = 1
+ TR = 1.5E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.ENDS
*
.SUBCKT PBSS4240DPN_PNP 1 2 3
*
Q2 1 2 3 PBSS4240DPN_PNP
*
.MODEL PBSS4240DPN_PNP PNP
+ IS = 2.526E-13
+ NF = 0.9959
+ ISE = 1.056E-13
+ NE = 1.763
+ BF = 480
+ IKF = 0.49
+ VAF = 40
+ NR = 0.994
+ ISC = 5.238E-14
+ NC = 1.128
+ BR = 75
+ IKR = 0.3
+ VAR = 10
+ RB = 21
+ IRB = 0.00019
+ RBM = 0.2
+ RE = 0.048
+ RC = 0.085
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.2E-11
+ VJE = 0.8407
+ MJE = 0.4065
+ TF = 5.6E-10
+ XTF = 10
+ VTF = 1
+ ITF = 0.4
+ PTF = 0
+ CJC = 3.212E-11
+ VJC = 0.5149
+ MJC = 0.3901
+ XCJC = 1
+ TR = 6E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4240T
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 40 V 
* hFE  = min. 350 typ. 470 @ 2V/100mA 
* 
*
*
* Package: SOT 23
*  
* Package Pin 1: Base   
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 17/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4240T NPN 
+ IS = 3.984E-013 
+ NF = 0.957 
+ ISE = 3.127E-015 
+ NE = 1.187 
+ BF = 570 
+ IKF = 2.8 
+ VAF = 88 
+ NR = 0.9615 
+ ISC = 1.253E-013 
+ NC = 1.35 
+ BR = 90.88 
+ IKR = 3800 
+ VAR = 10.6 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 9.392 
+ RE = 0.08 
+ RC = 0.0305 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.639E-010 
+ VJE = 0.7555 
+ MJE = 0.364 
+ TF = 5.8E-010 
+ XTF = 9 
+ VTF = 1.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 5.076E-011 
+ VJC = 0.7 
+ MJC = 0.465 
+ XCJC = 1 
+ TR = 1.22E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4240V
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 40 V 
* hFE  = 300 - 900 @ 5V/500mA 
* 
*
*
* Package: SOT 666
*  
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4240V NPN
+ IS = 1.967E-13
+ NF = 0.9876
+ ISE = 1.999E-13
+ NE = 2.5
+ BF = 480
+ IKF = 1
+ VAF = 85
+ NR = 0.9878
+ ISC = 1E-18
+ NC = 2.563
+ BR = 65
+ IKR = 5.5
+ VAR = 12
+ RB = 80
+ IRB = 3E-05
+ RBM = 0.6
+ RE = 0.053
+ RC = 0.073
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.158E-10
+ VJE = 0.5499
+ MJE = 0.3105
+ TF = 4.5E-10
+ XTF = 9
+ VTF = 3
+ ITF = 0.8
+ PTF = 0
+ CJC = 2.146E-11
+ VJC = 0.739
+ MJC = 0.4495
+ XCJC = 1
+ TR = 1.5E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4240Y
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 40 V 
* hFE  = min. 350 typ. 470 @ 2V/100mA 
* 
*
*
* Package: SOT 363
*  
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 17/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4240Y NPN 
+ IS = 3.984E-013 
+ NF = 0.957 
+ ISE = 3.127E-015 
+ NE = 1.187 
+ BF = 570 
+ IKF = 2.8 
+ VAF = 88 
+ NR = 0.9615 
+ ISC = 1.253E-013 
+ NC = 1.35 
+ BR = 90.88 
+ IKR = 3800 
+ VAR = 10.6 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 9.392 
+ RE = 0.08 
+ RC = 0.0305 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.639E-010 
+ VJE = 0.7555 
+ MJE = 0.364 
+ TF = 5.8E-010 
+ XTF = 9 
+ VTF = 1.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 5.076E-011 
+ VJC = 0.7 
+ MJC = 0.465 
+ XCJC = 1 
+ TR = 1.22E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* PBSS4250X
*
* NXP Semiconductors
*
* low VCEsat NPN BISS transistor
* IC   = 2 A
* VCEO = 50 V 
* hFE  = min. 300 @ 2V/1A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4250X NPN 
+      IS = 1.146E-12 
+      NF = 0.9958 
+      ISE = 2.959E-15 
+      NE = 1.188 
+      BF = 610 
+      IKF = 5 
+      VAF = 83 
+      NR = 0.995 
+      ISC = 1.991E-15 
+      NC = 1.283 
+      BR = 100 
+      IKR = 4.2 
+      VAR = 54 
+      RB = 14 
+      IRB = 0.0007 
+      RBM = 0.998 
+      RE = 0.044 
+      RC = 0.046 
+      XTB = 0 
+      EG = 1.11 
+      XTI = 3 
+      CJE = 3.185E-10 
+      VJE = 0.6753 
+      MJE = 0.3597 
+      TF = 7E-10 
+      XTF = 20 
+      VTF = 0.6 
+      ITF = 2 
+      PTF = 0 
+      CJC = 6.25E-11 
+      VJC = 0.5659 
+      MJC = 0.4359 
+      XCJC = 1 
+      TR = 3E-08 
+      CJS = 0 
+      VJS = 0.75 
+      MJS = 0.333 
+      FC = 0.78 
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4320T
*
* low VCEsat NPN BISS transistor
* Ic   = 2 A
* Vceo = 20 V 
* hFE  = min. 220 @ 2V/100mA 
*
*
* 
* Package: SOT 23
*  
* Package Pin 1: Base   
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4320T NPN
+ IS = 5.496E-13
+ NF = 0.9946
+ ISE = 2.489E-15
+ NE = 1.224
+ BF = 330
+ IKF = 8.2
+ VAF = 88
+ NR = 0.994
+ ISC = 7.962E-13
+ NC = 3
+ BR = 210
+ IKR = 2.7
+ VAR = 18
+ RB = 9
+ IRB = 0.001
+ RBM = 2.3
+ RE = 0.03
+ RC = 0.038
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.126E-10
+ VJE = 0.8521
+ MJE = 0.3129
+ TF = 1E-09
+ XTF = 6
+ VTF = 0.75
+ ITF = 1
+ PTF = 0
+ CJC = 9.508E-11
+ VJC = 0.6421
+ MJC = 0.4119
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.7211
.ENDS
**
**********************************************************
*
* NXP Semiconductors
*
* PBSS4320X
*
* low VCEsat NPN BISS transistor
* Ic   = 3 A
* Vceo = 20 V 
* hFE  = min. 220 @ 2V/0,1A 
*
*
* 
* Package: SOT 89
*  
* Package Pin 1: Emitter  
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 50/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS4320X NPN 
+ IS = 4.761E-013 
+ NF = 0.9884 
+ ISE = 4.936E-015 
+ NE = 1.439 
+ BF = 390 
+ IKF = 6.5 
+ VAF = 60 
+ NR = 0.9867 
+ ISC = 9.526E-015 
+ NC = 1.353 
+ BR = 240 
+ IKR = 2.7 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.0012 
+ RBM = 3.158 
+ RE = 0.03 
+ RC = 0.034 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.558E-010 
+ VJE = 0.738 
+ MJE = 0.3557 
+ TF = 7.5E-010 
+ XTF = 7 
+ VTF = 0.6 
+ ITF = 2 
+ PTF = 0 
+ CJC = 9.332E-011 
+ VJC = 0.235 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 8E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7211 
.ENDS
**
**********************************************************
*
* PBSS4330PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 3 A
* VCEO = 30 V 
* hFE  = typ. 465 @ 2V/500mA
*
*
* 
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 40/2003
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL QPBSS4330PA NPN 
+ IS = 5.653E-013 
+ NF = 0.9862 
+ ISE = 4.936E-015 
+ NE = 1.439 
+ BF = 500 
+ IKF = 5.8 
+ VAF = 88 
+ NR = 0.9841 
+ ISC = 3.581E-014 
+ NC = 1.266 
+ BR = 215 
+ IKR = 3.8 
+ VAR = 18 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 1.89 
+ RE = 0.03 
+ RC = 0.041 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.27E-010 
+ VJE = 0.7555 
+ MJE = 0.3671 
+ TF = 6E-010 
+ XTF = 9 
+ VTF = 1 
+ ITF = 4 
+ PTF = 0 
+ CJC = 5.645E-011 
+ VJC = 0.03976 
+ MJC = 0.1749 
+ XCJC = 1 
+ TR = 3.2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7211 
.ENDS
**
**********************************************************
*
* PBSS4330X
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 3 A
* VCEO = 30 V 
* hFE  = 270 - 700 @ 2V/1A
*
*
* 
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 40/2003
* Simulator: Spice 3        
*
**********************************************************
*#
.MODEL QPBSS4330X NPN 
+ IS = 5.653E-013 
+ NF = 0.9862 
+ ISE = 4.936E-015 
+ NE = 1.439 
+ BF = 500 
+ IKF = 5.8 
+ VAF = 88 
+ NR = 0.9841 
+ ISC = 3.581E-014 
+ NC = 1.266 
+ BR = 215 
+ IKR = 3.8 
+ VAR = 18 
+ RB = 14 
+ IRB = 0.0009 
+ RBM = 1.89 
+ RE = 0.03 
+ RC = 0.041 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.27E-010 
+ VJE = 0.7555 
+ MJE = 0.3671 
+ TF = 6E-010 
+ XTF = 9 
+ VTF = 1 
+ ITF = 4 
+ PTF = 0 
+ CJC = 5.645E-011 
+ VJC = 0.03976 
+ MJC = 0.1749 
+ XCJC = 1 
+ TR = 3.2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.7211 
.ENDS
**
**********************************************************
*
* PBSS4350D
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = min. 200 @ 2V/1A
*
*
* 
* Package: SOT 457
* 
* Package Pin 1;2;5;6: Collector
* Package Pin 3: Base
* Package Pin 4: Emitter
*
* 
* Extraction date (week/year): 25/2011  
* Simulator: Spice 3      
*
**********************************************************
*#
.MODEL QPBSS4350D NPN
+ IS = 4.423E-13
+ NF = 0.9928
+ ISE = 2.251E-14
+ NE = 1.552
+ BF = 289.5
+ IKF = 10
+ VAF = 154.1
+ NR = 0.986
+ ISC = 6.046E-15
+ NC = 1.1
+ BR = 67
+ IKR = 1.5
+ VAR = 20
+ RB = 9.6
+ IRB = 0.0012
+ RBM = 2.05
+ RE = 0.047
+ RC = 0.036
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.857E-10
+ VJE = 0.55
+ MJE = 0.3026
+ TF = 8.5E-10
+ XTF = 19
+ VTF = 0.5
+ ITF = 3.5
+ PTF = 0
+ CJC = 6.554E-11
+ VJC = 0.6265
+ MJC = 0.4593
+ XCJC = 1
+ TR = 2.85E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PBSS4350T
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 2 A
* VCEO = 50 V 
* hFE  = min. 300 @ 2V/100mA
*
*
* 
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3      
*
**********************************************************
*#
.MODEL QPBSS4350T NPN 
+ IS = 1.146E-12 
+ NF = 0.9958 
+ ISE = 2.959E-15 
+ NE = 1.188 
+ BF = 610 
+ IKF = 5 
+ VAF = 83 
+ NR = 0.995 
+ ISC = 1.991E-15 
+ NC = 1.283 
+ BR = 100 
+ IKR = 4.2 
+ VAR = 54 
+ RB = 14 
+ IRB = 0.0007 
+ RBM = 0.998 
+ RE = 0.044 
+ RC = 0.046 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.185E-10 
+ VJE = 0.6753 
+ MJE = 0.3597 
+ TF = 7E-10 
+ XTF = 20 
+ VTF = 0.6 
+ ITF = 2 
+ PTF = 0 
+ CJC = 6.25E-11 
+ VJC = 0.5659 
+ MJC = 0.4359 
+ XCJC = 1 
+ TR = 3E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS4350X 
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = 300 - 700 @ 2V/1A
*
*
* 
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 3       
*
**********************************************************
*#
.MODEL QPBSS4350X NPN 
+      IS = 1.146E-12 
+      NF = 0.9958 
+      ISE = 2.959E-15 
+      NE = 1.188 
+      BF = 610 
+      IKF = 5 
+      VAF = 83 
+      NR = 0.995 
+      ISC = 1.991E-15 
+      NC = 1.283 
+      BR = 100 
+      IKR = 4.2 
+      VAR = 54 
+      RB = 14 
+      IRB = 0.0007 
+      RBM = 0.998 
+      RE = 0.044 
+      RC = 0.046 
+      XTB = 0 
+      EG = 1.11 
+      XTI = 3 
+      CJE = 3.185E-10 
+      VJE = 0.6753 
+      MJE = 0.3597 
+      TF = 7E-10 
+      XTF = 20 
+      VTF = 0.6 
+      ITF = 2 
+      PTF = 0 
+      CJC = 6.25E-11 
+      VJC = 0.5659 
+      MJC = 0.4359 
+      XCJC = 1 
+      TR = 3E-08 
+      CJS = 0 
+      VJS = 0.75 
+      MJS = 0.333 
+      FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS4350Z
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = min. 200 @ 2V/500mA
*
*
* 
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4350Z 1 2 3
*
Q1 1 2 3 PBSS4350Z
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4350Z NPN
+ IS = 4.794E-13
+ NF = 0.9939
+ ISE = 2.251E-14
+ NE = 1.552
+ BF = 289.5
+ IKF = 10
+ VAF = 154.1
+ NR = 0.99
+ ISC = 6.046E-15
+ NC = 1.1
+ BR = 77
+ IKR = 1.5
+ VAR = 20
+ RB = 9.6
+ IRB = 0.0012
+ RBM = 2.05
+ RE = 0.047
+ RC = 0.036
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.857E-10
+ VJE = 0.55
+ MJE = 0.3026
+ TF = 8.5E-10
+ XTF = 19
+ VTF = 0.5
+ ITF = 3.5
+ PTF = 0
+ CJC = 6.554E-11
+ VJC = 0.6265
+ MJC = 0.4593
+ XCJC = 1
+ TR = 2.85E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.MODEL DIODE D
+ IS = 7.67E-15
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 150
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4420D
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 4 A
* VCEO = 20 V 
* hFE  = min. 300 typ. 450 @ 2V/500mA
*
*
* 
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 41/2005
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4420D 1 2 3
*
Q1 1 2 3 PBSS4420D
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4420D NPN 
+ IS = 7.987E-013 
+ NF = 0.9652 
+ ISE = 1.1E-014 
+ NE = 1.33 
+ BF = 510 
+ IKF = 9 
+ VAF = 65 
+ NR = 0.9659 
+ ISC = 1.147E-014 
+ NC = 1.14 
+ BR = 223 
+ IKR = 1.1 
+ VAR = 10.5 
+ RB = 21.5 
+ IRB = 0.0008 
+ RBM = 1.8 
+ RE = 0.03 
+ RC = 0.02 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.681E-010 
+ VJE = 0.7622 
+ MJE = 0.3574 
+ TF = 2.45E-009 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 6 
+ PTF = 0 
+ CJC = 9.107E-011 
+ VJC = 0.04067 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 3.5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 1E-018 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 0 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4440D
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 4 A
* VCEO = 40 V 
* hFE  = min. 300 @ 2V/500mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collectorr
*
*
* Extraction date (week/year): 37/2005
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4440D 1 2 3
*
Q1 1 2 3 PBSS4440D
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4440D NPN 
+ IS = 1.147E-012 
+ NF = 0.9743 
+ ISE = 1.81E-015 
+ NE = 1.121 
+ BF = 600 
+ IKF = 3 
+ VAF = 15 
+ NR = 0.974 
+ ISC = 3.648E-013 
+ NC = 2.393 
+ BR = 110 
+ IKR = 5 
+ VAR = 8.8 
+ RB = 14.4 
+ IRB = 0.0006 
+ RBM = 0.74 
+ RE = 0.038 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.681E-010 
+ VJE = 0.7622 
+ MJE = 0.3574 
+ TF = 1.2E-009 
+ XTF = 2.5 
+ VTF = 0.6 
+ ITF = 1 
+ PTF = 0 
+ CJC = 9.107E-011 
+ VJC = 0.04067 
+ MJC = 0.1902 
+ XCJC = 1 
+ TR = 4E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.1 
.MODEL DIODE D 
+ IS = 2.889E-014 
+ N = 1.004 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4480X
*
* NXP Semiconductors
*
* Low-VCEsat transistor NPN
* Ic   = 4 A
* Vceo = 80  V 
* hFE  = 400 @ 2V/1A (typical)
* 
*  
* 
* Package: SOT89
*
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 37/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS4480X 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL MAIN NPN
+ IS = 1.148E-012
+ NF = 0.9658
+ ISE = 3.396E-014
+ NE = 1.535
+ BF = 465
+ IKF = 3.104
+ VAF = 20
+ NR = 0.9658
+ ISC = 3.59E-013
+ NC = 1.201
+ BR = 94.77
+ IKR = 100
+ VAR = 20.14
+ RB = 8
+ IRB = 0.0007103
+ RBM = 1.3
+ RE = 0.0182
+ RC = 0.01365
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.053E-009
+ VJE = 0.8
+ MJE = 0.3559
+ TF = 8E-010
+ XTF = 3
+ VTF = 1.5
+ ITF = 0.8
+ PTF = 0
+ CJC = 9.237E-011
+ VJC = 0.23
+ MJC = 0.33
+ XCJC = 1
+ TR = 1.8E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 9.005E-015
+ N = 0.8698
+ BV = 1000
+ IBV = 0.001
+ RS = 2716
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PBSS4520X
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 5 A
* VCEO = 20 V 
* hFE  = min. 300 typ. 450 @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4520X 1 2 3
*
Q1 1 2 3 PBSS4520X 
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PBSS4520X NPN 
+ IS = 1.441E-012 
+ NF = 0.9485 
+ ISE = 4.262E-015 
+ NE = 1.141 
+ BF = 550 
+ IKF = 21 
+ VAF = 70 
+ NR = 0.9488 
+ ISC = 3.09E-013 
+ NC = 2.632 
+ BR = 201.1 
+ IKR = 1.8 
+ VAR = 18 
+ RB = 12 
+ IRB = 1E-006 
+ RBM = 2.262 
+ RE = 0.019 
+ RC = 0.012 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.016E-009 
+ VJE = 0.7109 
+ MJE = 0.3467 
+ TF = 8E-010 
+ XTF = 2 
+ VTF = 1 
+ ITF = 3 
+ PTF = 0 
+ CJC = 2.011E-010 
+ VJC = 0.678 
+ MJC = 0.4559 
+ XCJC = 1 
+ TR = 5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.4E-014 
+ N = 0.9976 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1050 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4540X
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 4 A
* VCEO = 40 V 
* hFE  = min. 300 @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 06/2004
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4540X 1 2 3
*
Q1 1 2 3 PBSS4540X 
D1 2 1 DIODE
* 
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4540X NPN 
+ IS = 1.728E-012 
+ NF = 0.9717 
+ ISE = 1.686E-014 
+ NE = 1.295 
+ BF = 570 
+ IKF = 30 
+ VAF = 110.5 
+ NR = 0.972 
+ ISC = 1.619E-014 
+ NC = 1.094 
+ BR = 160 
+ IKR = 15 
+ VAR = 13.2 
+ RB = 2.6 
+ IRB = 0.000183 
+ RBM = 1.3 
+ RE = 0.013 
+ RC = 0.019 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.044E-009 
+ VJE = 0.55 
+ MJE = 0.3176 
+ TF = 1.35E-009 
+ XTF = 30 
+ VTF = 1.7 
+ ITF = 1.6 
+ PTF = 0 
+ CJC = 2.02E-010 
+ VJC = 0.627 
+ MJC = 0.45 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.08 
.MODEL DIODE D 
+ IS = 1E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.298 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4540Z
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 5 A
* VCEO = 40 V 
* hFE  = min. 300 typ. 500 @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
*
* Simulator: Spice 2      
*
**********************************************************
*#
.SUBCKT PBSS4540Z 1 2 3
*
Q1 1 2 3 PBSS4540Z
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS4540Z NPN
+ IS = 2.317E-12
+ NF = 0.9656
+ ISE = 3.506E-14
+ NE = 1.401
+ BF = 530
+ IKF = 26
+ VAF = 110.5
+ NR = 0.9655
+ ISC = 3.877E-14
+ NC = 1.03
+ BR = 300
+ IKR = 7
+ VAR = 13.2
+ RB = 2.6
+ IRB = 0.000183
+ RBM = 1.3
+ RE = 0.034
+ RC = 0.022
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.044E-09
+ VJE = 0.55
+ MJE = 0.3176
+ TF = 1.35E-09
+ XTF = 30
+ VTF = 1.7
+ ITF = 1.6
+ PTF = 0
+ CJC = 2.02E-10
+ VJC = 0.627
+ MJC = 0.45
+ XCJC = 1
+ TR = 2E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.08
.MODEL DIODE D
+ IS = 1E-15
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 1.298
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS4560PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 6 A
* VCEO = 60 V 
* hFE  = typ. 325 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3      
*
**********************************************************
*#
.SUBCKT PBSS4560PA 1 2 3
*
Q1 1 2 3 PBSS4560PA 
D1 2 1 DIODE 
*  
* Diode D1 is dedicated to improve modeling of reversemode
* operation and does not reflect a physical device.
*
.MODEL PBSS4560PA NPN 
+ IS = 1.437E-012 
+ NF = 0.956 
+ ISE = 5.283E-014 
+ NE = 1.354 
+ BF = 513 
+ IKF = 3.03 
+ VAF = 17.1 
+ NR = 0.9558 
+ ISC = 2.905E-016 
+ NC = 0.9863 
+ BR = 141.1 
+ IKR = 12.81 
+ VAR = 18 
+ RB = 9.55 
+ IRB = 0.0007 
+ RBM = 1.9 
+ RE = 0.01754 
+ RC = 0.02693 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.404E-010 
+ VJE = 0.7269 
+ MJE = 0.3563 
+ TF = 9.5E-010 
+ XTF = 5 
+ VTF = 1 
+ ITF = 2 
+ PTF = 0 
+ CJC = 7.17E-011 
+ VJC = 0.045 
+ MJC = 0.2 
+ XCJC = 1 
+ TR = 6E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 1.513E-013 
+ N = 1.001 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 430.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4580PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 5,6 A
* VCEO = 80 V 
* hFE  = typ. 265 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3      
*
**********************************************************
*#
*
.SUBCKT PBSS4580PA 1 2 3 
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices
*
Q1 1 2 3 PBSS4580PA 0.8913  
Q2 11 2 3 PBSS4580PA 0.1087
D1 2 1 DIODE 
D2 2 11 DIODE
RCQ 11 1 18.03 
*  
.MODEL PBSS4580PA NPN 
+ IS = 1.676E-012 
+ NF = 0.9647 
+ ISE = 2.594E-014 
+ NE = 1.301 
+ BF = 480 
+ IKF = 3.374 
+ VAF = 33.3 
+ NR = 0.9648 
+ ISC = 3.959E-013 
+ NC = 1.352 
+ BR = 95.07 
+ IKR = 40.56 
+ VAR = 29.35 
+ RB = 9.927 
+ IRB = 0.0007 
+ RBM = 1.9 
+ RE = 0.03 
+ RC = 0.01048 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.501E-010 
+ VJE = 0.7269 
+ MJE = 0.3563 
+ TF = 7.7E-010 
+ XTF = 8 
+ VTF = 2 
+ ITF = 0.8 
+ PTF = 0 
+ CJC = 7.251E-011 
+ VJC = 0.19 
+ MJC = 0.3201 
+ XCJC = 1 
+ TR = 9E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 4.382E-014 
+ N = 0.9624 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1496 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4612PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 6 A
* VCEO = 12 V 
* hFE  = typ. 415 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3      
*
**********************************************************
*#
*
.SUBCKT PBSS4612PA 1 2 3 
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices..
*
Q1 1 2 3 PBSS4612PA 0.9683 
Q2 11 2 3 PBSS4612PA 0.03168
D1 2 1 DIODE 
D2 2 11 DIODE
RCQ 1 33 11.23 
*  
.MODEL PBSS4612PA NPN 
+ IS = 3.467E-012 
+ NF = 0.9647 
+ ISE = 2.594E-014 
+ NE = 1.301 
+ BF = 480 
+ IKF = 19.47 
+ VAF = 54.85 
+ NR = 0.9643 
+ ISC = 3.959E-013 
+ NC = 1.352 
+ BR = 316.8 
+ IKR = 7.605 
+ VAR = 16.5 
+ RB = 9.927 
+ IRB = 0.0007 
+ RBM = 1.9 
+ RE = 0.02329 
+ RC = 0.01593 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.513E-010 
+ VJE = 0.7269 
+ MJE = 0.3563 
+ TF = 2E-009 
+ XTF = 0.8 
+ VTF = 0.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.509E-010 
+ VJC = 0.19 
+ MJC = 0.1651 
+ XCJC = 1 
+ TR = 4E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.MODEL DIODE D 
+ IS = 1.313E-014 
+ N = 1.01 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4565 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4620PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 6 A
* VCEO = 20 V 
* hFE  = typ. 415 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3      
*
**********************************************************
*#
*
.SUBCKT PBSS4620PA 1 2 3 
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices..
*
Q1 1 2 3 PBSS4620PA 0.9683 
Q2 11 2 3 PBSS4620PA 0.03168 
D1 2 1 DIODE 
D2 2 11 DIODE
RCQ 1 11 11.23 
*  
.MODEL PBSS4620PA NPN 
+ IS = 3.467E-012 
+ NF = 0.9647 
+ ISE = 2.594E-014 
+ NE = 1.301 
+ BF = 480 
+ IKF = 19.47 
+ VAF = 54.85 
+ NR = 0.9643 
+ ISC = 3.959E-013 
+ NC = 1.352 
+ BR = 316.8 
+ IKR = 7.605 
+ VAR = 16.5 
+ RB = 9.927 
+ IRB = 0.0007 
+ RBM = 1.9 
+ RE = 0.02329 
+ RC = 0.01593 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.513E-010 
+ VJE = 0.7269 
+ MJE = 0.3563 
+ TF = 2E-009 
+ XTF = 0.8 
+ VTF = 0.5 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.509E-010 
+ VJC = 0.19 
+ MJC = 0.1651 
+ XCJC = 1 
+ TR = 4E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.MODEL DIODE D 
+ IS = 1.313E-014 
+ N = 1.01 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4565 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS4630PA 
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 6 A
* VCEO = 30 V 
* hFE  = typ. 400 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3      
*
**********************************************************
*#
*
.SUBCKT PBSS4630PA 1 2 3 
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices..
*
Q1 1 2 3 PBSS4630PA 0.9263 
Q2 11 2 3 PBSS4630PA 0.07368
D1 2 1 DIODE 
D2 2 11 DIODE 
RC 1 11 7.183 
*  
.MODEL PBSS4630PA NPN 
+ IS = 1.786E-012 
+ NF = 0.9722 
+ ISE = 1.265E-014 
+ NE = 1.199 
+ BF = 449.5 
+ IKF = 13.45 
+ VAF = 66.53 
+ NR = 0.9722 
+ ISC = 1.377E-016 
+ NC = 1.17 
+ BR = 247.8 
+ IKR = 4.988 
+ VAR = 18 
+ RB = 9.55 
+ IRB = 0.0007 
+ RBM = 1.6 
+ RE = 0.01873 
+ RC = 0.02373 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.704E-010 
+ VJE = 0.7269 
+ MJE = 0.3563 
+ TF = 1.2E-009 
+ XTF = 5 
+ VTF = 1 
+ ITF = 3 
+ PTF = 0 
+ CJC = 9.69E-011 
+ VJC = 0.05084 
+ MJC = 0.1651 
+ XCJC = 1 
+ TR = 5E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.MODEL DIODE D 
+ IS = 4.256E-014 
+ N = 1.005 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 566.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5120T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 20 V 
* hFE  = min. 300 typ. 450 @ 2V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 01/2006
* Simulator: Spice 3      
*
**********************************************************
*#
.MODEL QPBSS5120T PNP 
+ IS = 4.437E-013 
+ NF = 0.9804 
+ ISE = 4.91E-015 
+ NE = 1.329 
+ BF = 458 
+ IKF = 1.6 
+ VAF = 25.5 
+ NR = 0.979 
+ ISC = 2.768E-014 
+ NC = 1.138 
+ BR = 101.4 
+ IKR = 0.8 
+ VAR = 16 
+ RB = 8.1 
+ IRB = 8E-005 
+ RBM = 0.9 
+ RE = 0.075 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.112E-010 
+ VJE = 0.8586 
+ MJE = 0.4226 
+ TF = 9.7E-010 
+ XTF = 25 
+ VTF = 2.2 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 7.137E-011 
+ VJC = 0.4836 
+ MJC = 0.3643 
+ XCJC = 1 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.ENDS
**
**********************************************************
*
* PBSS5130T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 30 V 
* hFE  = min. 300 typ. 450 @ 2V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 01/2006
* Simulator: Spice 3      
*
********************************************************** *#
.MODEL QPBSS5130T PNP 
+ IS = 4.437E-013 
+ NF = 0.9804 
+ ISE = 4.91E-015 
+ NE = 1.329 
+ BF = 458 
+ IKF = 1.6 
+ VAF = 25.5 
+ NR = 0.979 
+ ISC = 2.768E-014 
+ NC = 1.138 
+ BR = 101.4 
+ IKR = 0.8 
+ VAR = 16 
+ RB = 8.1 
+ IRB = 8E-005 
+ RBM = 0.9 
+ RE = 0.075 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.112E-010 
+ VJE = 0.8586 
+ MJE = 0.4226 
+ TF = 9.7E-010 
+ XTF = 25 
+ VTF = 2.2 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 7.137E-011 
+ VJC = 0.4836 
+ MJC = 0.3643 
+ XCJC = 1 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.ENDS
**
**********************************************************
*
* PBSS5140T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 40 V 
* hFE  = 300 - 800 @ 5V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
********************************************************** *#
.MODEL QPBSS5140T PNP 
+ IS = 2.837E-13 
+ NF = 0.9839 
+ ISE = 1.071E-14 
+ NE = 1.221 
+ BF = 577.3 
+ IKF = 0.56 
+ VAF = 28 
+ NR = 0.982 
+ ISC = 6.577E-14 
+ NC = 1.123 
+ BR = 121 
+ IKR = 0.2 
+ VAR = 10 
+ RB = 21 
+ IRB = 0.00019 
+ RBM = 0.2 
+ RE = 0.11 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.276E-11 
+ VJE = 0.819 
+ MJE = 0.4077 
+ TF = 6.5E-10 
+ XTF = 5 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.252E-11 
+ VJC = 0.803 
+ MJC = 0.4962 
+ XCJC = 1 
+ TR = 1.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5140U
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 40 V 
* hFE  = 300 - 800 @ 5V/100mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
********************************************************** *#
.MODEL QPBSS5140U PNP 
+ IS = 2.837E-13 
+ NF = 0.9839 
+ ISE = 1.071E-14 
+ NE = 1.221 
+ BF = 577.3 
+ IKF = 0.56 
+ VAF = 28 
+ NR = 0.982 
+ ISC = 6.577E-14 
+ NC = 1.123 
+ BR = 121 
+ IKR = 0.2 
+ VAR = 10 
+ RB = 21 
+ IRB = 0.00019 
+ RBM = 0.2 
+ RE = 0.11 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.276E-11 
+ VJE = 0.819 
+ MJE = 0.4077 
+ TF = 6.5E-10 
+ XTF = 5 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.252E-11 
+ VJC = 0.803 
+ MJC = 0.4962 
+ XCJC = 1 
+ TR = 1.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5140V
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 40 V 
* hFE  = 300 - 800 @ 5V/100mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
********************************************************** *#
.MODEL QPBSS5140V PNP
+ IS = 2.526E-13
+ NF = 0.9959
+ ISE = 1.056E-13
+ NE = 1.763
+ BF = 480
+ IKF = 0.49
+ VAF = 40
+ NR = 0.994
+ ISC = 5.238E-14
+ NC = 1.128
+ BR = 75
+ IKR = 0.3
+ VAR = 10
+ RB = 21
+ IRB = 0.00019
+ RBM = 0.2
+ RE = 0.05
+ RC = 0.085
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.2E-11
+ VJE = 0.8407
+ MJE = 0.4065
+ TF = 5.6E-10
+ XTF = 10
+ VTF = 1
+ ITF = 0.4
+ PTF = 0
+ CJC = 3.212E-11
+ VJC = 0.5149
+ MJC = 0.3901
+ XCJC = 1
+ TR = 6E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS5160DS
*
* NXP Semiconductors
*
* Low VCEsat PNP/PNP BISS transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 200 typ. 350 @ 5V/1mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 47/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5160DS 1 2 3
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
Q1 1 2 3 PBSS5160DS 
D1 1 2 DIODE 
*
.MODEL PBSS5160DS PNP 
+ IS = 1.695E-013 
+ NF = 0.9919 
+ ISE = 1.5E-014 
+ NE = 1.348 
+ BF = 370 
+ IKF = 0.4 
+ VAF = 40 
+ NR = 0.9912 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 30 
+ IKR = 0.4 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 1.12 
+ RE = 0.06 
+ RC = 0.105 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.466E-011 
+ VJE = 0.8044 
+ MJE = 0.3919 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 1.1 
+ ITF = 1.35 
+ PTF = 0 
+ CJC = 3.162E-011 
+ VJC = 0.7543 
+ MJC = 0.4479 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D 
+ IS = 1.651E-014 
+ N = 1.079 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5160T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 200 typ. 350 @ 5V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter   
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 22/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5160T 1 2 3
*
Q1 1 2 3 PBSS5160T 
D1 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS5160T PNP 
+ IS = 2.367E-013 
+ NF = 0.9977 
+ ISE = 1.836E-014 
+ NE = 1.276 
+ BF = 490 
+ IKF = 0.4 
+ VAF = 100 
+ NR = 0.9937 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 25 
+ IKR = 0.5 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.0011 
+ RBM = 0.1 
+ RE = 0.055 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.833E-011 
+ VJE = 0.838 
+ MJE = 0.4098 
+ TF = 7.8E-010 
+ XTF = 15 
+ VTF = 1.1 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.058E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.74 
.MODEL DIODE D 
+ IS = 3.167E-014 
+ N = 1.051 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5160U
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 200 typ. 350 @ 5V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter   
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 39/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5160U 1 2 3
* 
Q1 1 2 3 PBSS5160U 
D1 1 2 DIODE
* 
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PBSS5160U PNP 
+ IS = 1.695E-013 
+ NF = 0.9919 
+ ISE = 1.5E-014 
+ NE = 1.348 
+ BF = 370 
+ IKF = 0.4 
+ VAF = 40 
+ NR = 0.9912 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 30 
+ IKR = 0.4 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 1.12 
+ RE = 0.105 
+ RC = 0.105 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.466E-011 
+ VJE = 0.8044 
+ MJE = 0.3919 
+ TF = 9E-010 
+ XTF = 20 
+ VTF = 1.1 
+ ITF = 1.35 
+ PTF = 0 
+ CJC = 3.162E-011 
+ VJC = 0.7543 
+ MJC = 0.4479 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D 
+ IS = 1.651E-014 
+ N = 1.079 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5160V
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 60 V 
* hFE  = min. 200 typ. 350 @ 5V/1mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 18/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5160V 1 2 3
*
Q1 1 2 3 PBSS5160V 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5160V PNP 
+ IS = 2.367E-013 
+ NF = 0.9977 
+ ISE = 1.836E-014 
+ NE = 1.276 
+ BF = 490 
+ IKF = 0.4 
+ VAF = 100 
+ NR = 0.9937 
+ ISC = 1.541E-013 
+ NC = 1.821 
+ BR = 25 
+ IKR = 0.5 
+ VAR = 18 
+ RB = 12 
+ IRB = 0.0011 
+ RBM = 0.1 
+ RE = 0.055 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.833E-011 
+ VJE = 0.838 
+ MJE = 0.4098 
+ TF = 7.8E-010 
+ XTF = 15 
+ VTF = 1.1 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.058E-011 
+ VJC = 0.6185 
+ MJC = 0.4452 
+ XCJC = 1 
+ TR = 3.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.74 
.MODEL DIODE D 
+ IS = 3.167E-014 
+ N = 1.051 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 3000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.7 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5220T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 20 V 
* hFE  = min. 225  @ 2V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter   
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5220T PNP 
+ IS = 9.07E-13 
+ NF = 0.9965 
+ ISE = 1.41E-14 
+ NE = 1.329 
+ BF = 412 
+ IKF = 2.8 
+ VAF = 20 
+ NR = 0.9963 
+ ISC = 2.47E-14 
+ NC = 1.168 
+ BR = 250 
+ IKR = 0.53 
+ VAR = 11 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 4.6 
+ RE = 0.035 
+ RC = 0.026 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.793E-10 
+ VJE = 0.9448 
+ MJE = 0.4405 
+ TF = 1.15E-09 
+ XTF = 30 
+ VTF = 0.6 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 1.258E-10 
+ VJC = 0.5079 
+ MJC = 0.349 
+ XCJC = 1 
+ TR = 1.3E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5220V
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 20 V 
* hFE  = min. 220 typ. 495  @ 2V/1mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector 
*
*
* Extraction date (week/year): 29/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5220V PNP 
+ IS = 2.37E-013 
+ NF = 0.988 
+ ISE = 2.328E-014 
+ NE = 1.419 
+ BF = 510 
+ IKF = 0.65 
+ VAF = 20 
+ NR = 0.985 
+ ISC = 5E-014 
+ NC = 1.229 
+ BR = 170 
+ IKR = 0.17 
+ VAR = 10.4 
+ RB = 30 
+ IRB = 6E-005 
+ RBM = 0.0737 
+ RE = 0.057 
+ RC = 0.053 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.38E-011 
+ VJE = 0.8592 
+ MJE = 0.417 
+ TF = 1.12E-009 
+ XTF = 5 
+ VTF = 2.2 
+ ITF = 1 
+ PTF = 0 
+ CJC = 4.65E-011 
+ VJC = 0.63 
+ MJC = 0.35 
+ XCJC = 1 
+ TR = 4E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.ENDS
**
**********************************************************
*
* PBSS5230T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 30 V 
* hFE  = min. 300 typ. 450  @ 2V/100mA
* 
* 
* 
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter   
* Package Pin 3: Collector 
* 
* 
* Extraction date (week/year): 01/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5230T PNP 
+ IS = 4.437E-013 
+ NF = 0.9804 
+ ISE = 4.91E-015 
+ NE = 1.329 
+ BF = 458 
+ IKF = 1.6 
+ VAF = 25.5 
+ NR = 0.979 
+ ISC = 2.768E-014 
+ NC = 1.138 
+ BR = 101.4 
+ IKR = 0.8 
+ VAR = 16 
+ RB = 8.1 
+ IRB = 8E-005 
+ RBM = 0.9 
+ RE = 0.075 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.112E-010 
+ VJE = 0.8586 
+ MJE = 0.4226 
+ TF = 9.7E-010 
+ XTF = 25 
+ VTF = 2.2 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 7.137E-011 
+ VJC = 0.4836 
+ MJC = 0.3643 
+ XCJC = 1 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.ENDS
**
**********************************************************
*
* PBSS5240T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 40 V 
* hFE  = min. 300 typ. 450  @ 2V/100mA
* 
* 
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter   
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 01/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5240T PNP 
+ IS = 4.437E-013 
+ NF = 0.9804 
+ ISE = 4.91E-015 
+ NE = 1.329 
+ BF = 458 
+ IKF = 1.6 
+ VAF = 25.5 
+ NR = 0.979 
+ ISC = 2.768E-014 
+ NC = 1.138 
+ BR = 101.4 
+ IKR = 0.8 
+ VAR = 16 
+ RB = 8.1 
+ IRB = 8E-005 
+ RBM = 0.9 
+ RE = 0.075 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.112E-010 
+ VJE = 0.8586 
+ MJE = 0.4226 
+ TF = 9.7E-010 
+ XTF = 25 
+ VTF = 2.2 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 7.137E-011 
+ VJC = 0.4836 
+ MJC = 0.3643 
+ XCJC = 1 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.ENDS
**
**********************************************************
*
* PBSS5240V
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1,8 A
* VCEO = 40 V 
* hFE  = 300 - 800  @ 5V/100mA
* 
* 
*
* Package: SOT 666
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5240V PNP
+ IS = 2.526E-13
+ NF = 0.9959
+ ISE = 1.056E-13
+ NE = 1.763
+ BF = 480
+ IKF = 0.49
+ VAF = 40
+ NR = 0.994
+ ISC = 5.238E-14
+ NC = 1.128
+ BR = 75
+ IKR = 0.3
+ VAR = 10
+ RB = 21
+ IRB = 0.00019
+ RBM = 0.2
+ RE = 0.05
+ RC = 0.085
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 9.2E-11
+ VJE = 0.8407
+ MJE = 0.4065
+ TF = 5.6E-10
+ XTF = 10
+ VTF = 1
+ ITF = 0.4
+ PTF = 0
+ CJC = 3.212E-11
+ VJC = 0.5149
+ MJC = 0.3901
+ XCJC = 1
+ TR = 6E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PBSS5240Y
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 40 V 
* hFE  = min. 300  @ 2V/100mA
* 
* 
*
* Package: SOT 363
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 01/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5240Y PNP 
+ IS = 4.437E-013 
+ NF = 0.9804 
+ ISE = 4.91E-015 
+ NE = 1.329 
+ BF = 458 
+ IKF = 1.6 
+ VAF = 25.5 
+ NR = 0.979 
+ ISC = 2.768E-014 
+ NC = 1.138 
+ BR = 101.4 
+ IKR = 0.8 
+ VAR = 16 
+ RB = 8.1 
+ IRB = 8E-005 
+ RBM = 0.9 
+ RE = 0.075 
+ RC = 0.03 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.112E-010 
+ VJE = 0.8586 
+ MJE = 0.4226 
+ TF = 9.7E-010 
+ XTF = 25 
+ VTF = 2.2 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 7.137E-011 
+ VJC = 0.4836 
+ MJC = 0.3643 
+ XCJC = 1 
+ TR = 1.9E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.ENDS
**
**********************************************************
*
* PBSS5250T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 50 V 
* hFE  = min. 200  @ 2V/0,5A
* 
* 
* r
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 18/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5250T PNP 
+ IS = 7.26E-13 
+ NF = 0.9959 
+ ISE = 2.347E-14 
+ NE = 1.301 
+ BF = 400 
+ IKF = 1.9 
+ VAF = 35 
+ NR = 0.9955 
+ ISC = 1.092E-13 
+ NC = 1.199 
+ BR = 80 
+ IKR = 0.95 
+ VAR = 10 
+ RB = 9.9 
+ IRB = 0.00075 
+ RBM = 4.026 
+ RE = 0.035 
+ RC = 0.035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.613E-10 
+ VJE = 0.916 
+ MJE = 0.4323 
+ TF = 1.1E-09 
+ XTF = 23 
+ VTF = 0.8 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 8.272E-11 
+ VJC = 0.8025 
+ MJC = 0.4363 
+ XCJC = 1 
+ TR = 1.9E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5250X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 50 V 
* hFE  = min. 200  @ 2V/0,1A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 28/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5250X 1 2 3
*
Q1 1 2 3 PBSS5250X
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5250X PNP 
+ IS = 6.49E-013 
+ NF = 0.991 
+ ISE = 4.188E-014 
+ NE = 1.347 
+ BF = 465.6 
+ IKF = 1 
+ VAF = 10 
+ NR = 0.9911 
+ ISC = 1.119E-013 
+ NC = 3 
+ BR = 56 
+ IKR = 0.6521 
+ VAR = 5.3 
+ RB = 12 
+ IRB = 0.0006792 
+ RBM = 2.1 
+ RE = 0.03 
+ RC = 0.048 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.645E-010 
+ VJE = 0.852 
+ MJE = 0.4234 
+ TF = 1.05E-009 
+ XTF = 8 
+ VTF = 5 
+ ITF = 6 
+ PTF = 0 
+ CJC = 3.535E-011 
+ VJC = 2 
+ MJC = 0.2569 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D 
+ IS = 3.076E-014 
+ N = 1.062 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 6237 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5320D
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 20 V 
* hFE  = min. 200  @ 2V/100mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 45/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5320D PNP 
+ IS = 5.563E-013 
+ NF = 0.9847 
+ ISE = 1.803E-013 
+ NE = 1.509 
+ BF = 470 
+ IKF = 3.1 
+ VAF = 20 
+ NR = 0.9842 
+ ISC = 9.982E-014 
+ NC = 1.18 
+ BR = 200 
+ IKR = 0.65 
+ VAR = 5 
+ RB = 9.9 
+ IRB = 0.00075 
+ RBM = 4.026 
+ RE = 0.049 
+ RC = 0.021 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.913E-010 
+ VJE = 0.916 
+ MJE = 0.4323 
+ TF = 1.9E-009 
+ XTF = 3 
+ VTF = 0.7 
+ ITF = 2.3 
+ PTF = 0 
+ CJC = 1.303E-010 
+ VJC = 0.4684 
+ MJC = 0.3376 
+ XCJC = 1 
+ TR = 2E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5320T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 20 V 
* hFE  = min. 220  @ 2V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5320T PNP 
+ IS = 9.07E-13 
+ NF = 0.9965 
+ ISE = 1.41E-14 
+ NE = 1.329 
+ BF = 412 
+ IKF = 2.8 
+ VAF = 20 
+ NR = 0.9963 
+ ISC = 2.47E-14 
+ NC = 1.168 
+ BR = 250 
+ IKR = 0.53 
+ VAR = 11 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 4.6 
+ RE = 0.035 
+ RC = 0.026 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.793E-10 
+ VJE = 0.9448 
+ MJE = 0.4405 
+ TF = 1.15E-09 
+ XTF = 30 
+ VTF = 0.6 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 1.258E-10 
+ VJC = 0.5079 
+ MJC = 0.349 
+ XCJC = 1 
+ TR = 1.3E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5320X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 20 V 
* hFE  = min. 220  @ 2V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5320X PNP 
+ IS = 9.07E-13 
+ NF = 0.9965 
+ ISE = 1.41E-14 
+ NE = 1.329 
+ BF = 412 
+ IKF = 2.8 
+ VAF = 20 
+ NR = 0.9963 
+ ISC = 2.47E-14 
+ NC = 1.168 
+ BR = 250 
+ IKR = 0.53 
+ VAR = 11 
+ RB = 12 
+ IRB = 0.001 
+ RBM = 4.6 
+ RE = 0.035 
+ RC = 0.026 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.793E-10 
+ VJE = 0.9448 
+ MJE = 0.4405 
+ TF = 1.15E-09 
+ XTF = 30 
+ VTF = 0.6 
+ ITF = 1.7 
+ PTF = 0 
+ CJC = 1.258E-10 
+ VJC = 0.5079 
+ MJC = 0.349 
+ XCJC = 1 
+ TR = 1.3E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5330PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 30 V 
* hFE  = typ. 320  @ 2V/500mA
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPBSS5330PA PNP 
+ IS = 3.536E-013 
+ NF = 0.9711 
+ ISE = 1.969E-014 
+ NE = 1.233 
+ BF = 335 
+ IKF = 2.45 
+ VAF = 25.6 
+ NR = 0.9705 
+ ISC = 4.75E-014 
+ NC = 1.114 
+ BR = 200 
+ IKR = 0.55 
+ VAR = 9.6 
+ RB = 10.9 
+ IRB = 0.0005636 
+ RBM = 0.7 
+ RE = 0.03 
+ RC = 0.038 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.822E-010 
+ VJE = 0.7985 
+ MJE = 0.4024 
+ TF = 1.6E-009 
+ XTF = 1 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 1.032E-010 
+ VJC = 0.4698 
+ MJC = 0.3295 
+ XCJC = 1 
+ TR = 5.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS5330X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 30 V 
* hFE  = 175 - 450  @ 2V/1A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
********************************************************** 
*#
.MODEL QPBSS5330X PNP 
+ IS = 3.536E-013 
+ NF = 0.9711 
+ ISE = 1.969E-014 
+ NE = 1.233 
+ BF = 335 
+ IKF = 2.45 
+ VAF = 25.6 
+ NR = 0.9705 
+ ISC = 4.75E-014 
+ NC = 1.114 
+ BR = 200 
+ IKR = 0.55 
+ VAR = 9.6 
+ RB = 10.9 
+ IRB = 0.0005636 
+ RBM = 0.7 
+ RE = 0.03 
+ RC = 0.038 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.822E-010 
+ VJE = 0.7985 
+ MJE = 0.4024 
+ TF = 1.6E-009 
+ XTF = 1 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 1.032E-010 
+ VJC = 0.4698 
+ MJC = 0.3295 
+ XCJC = 1 
+ TR = 5.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.ENDS
**
**********************************************************
*
* PBSS5350D
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = min. 200  @ 2V/500mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
* 
* Extraction date (week/year): 25/2011  
* Simulator: Spice 3
*
********************************************************* 
*#
.MODEL QPBSS5350D PNP
+ IS = 4.365E-013
+ NF = 0.972
+ ISE = 4.188E-014
+ NE = 1.347
+ BF = 435
+ IKF = 1
+ VAF = 10
+ NR = 0.9729
+ ISC = 2.911E-014
+ NC = 1.079
+ BR = 40.64
+ IKR = 0.6521
+ VAR = 5.3
+ RB = 12
+ IRB = 0.0006792
+ RBM = 2.1
+ RE = 0.03
+ RC = 0.03986
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 2.645E-010
+ VJE = 0.852
+ MJE = 0.4234
+ TF = 1.05E-009
+ XTF = 8
+ VTF = 5
+ ITF = 6
+ PTF = 0
+ CJC = 3.535E-011
+ VJC = 2
+ MJC = 0.2569
+ XCJC = 1
+ TR = 1E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.8
.ENDS
**
**********************************************************
*
* PBSS5350T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 2 A
* VCEO = 50 V 
* hFE  = min. 200  @ 2V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter 
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
********************************************************** 
*#
.MODEL QPBSS5350T PNP 
+ IS = 7.26E-13 
+ NF = 0.9959 
+ ISE = 2.347E-14 
+ NE = 1.301 
+ BF = 400 
+ IKF = 1.9 
+ VAF = 35 
+ NR = 0.9955 
+ ISC = 1.092E-13 
+ NC = 1.199 
+ BR = 80 
+ IKR = 0.95 
+ VAR = 10 
+ RB = 9.9 
+ IRB = 0.00075 
+ RBM = 4.026 
+ RE = 0.035 
+ RC = 0.035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.613E-10 
+ VJE = 0.916 
+ MJE = 0.4323 
+ TF = 1.1E-09 
+ XTF = 23 
+ VTF = 0.8 
+ ITF = 1.3 
+ PTF = 0 
+ CJC = 8.272E-11 
+ VJC = 0.8025 
+ MJC = 0.4363 
+ XCJC = 1 
+ TR = 1.9E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PBSS5350X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = 200 - 450  @ 2V/1A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: collector 
* Package Pin 3: Base
*
*
* Extraction date (week/year): 28/2006
* Simulator: Spice 3
*
********************************************************** 
*#
.SUBCKT PBSS5350X 1 2 3
*
Q1 1 2 3 PBSS5350X
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5350X PNP 
+ IS = 6.49E-013 
+ NF = 0.991 
+ ISE = 4.188E-014 
+ NE = 1.347 
+ BF = 465.6 
+ IKF = 1 
+ VAF = 10 
+ NR = 0.9911 
+ ISC = 1.119E-013 
+ NC = 3 
+ BR = 56 
+ IKR = 0.6521 
+ VAR = 5.3 
+ RB = 12 
+ IRB = 0.0006792 
+ RBM = 2.1 
+ RE = 0.03 
+ RC = 0.048 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.645E-010 
+ VJE = 0.852 
+ MJE = 0.4234 
+ TF = 1.05E-009 
+ XTF = 8 
+ VTF = 5 
+ ITF = 6 
+ PTF = 0 
+ CJC = 3.535E-011 
+ VJC = 2 
+ MJC = 0.2569 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8 
.MODEL DIODE D 
+ IS = 3.076E-014 
+ N = 1.062 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 6237 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5350Z
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 3 A
* VCEO = 50 V 
* hFE  = min. 200  @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: collector 
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
********************************************************** 
*#
.SUBCKT PBSS5350Z 1 2 3
*
Q1 1 2 3 PBSS5350Z
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5350Z PNP
+ IS = 5.841E-13
+ NF = 0.9934
+ ISE = 9.926E-15
+ NE = 1.3
+ BF = 360
+ IKF = 2.36
+ VAF = 40
+ NR = 0.9927
+ ISC = 1.037E-13
+ NC = 1.19
+ BR = 75
+ IKR = 0.7
+ VAR = 12
+ RB = 7
+ IRB = 0.00075
+ RBM = 1
+ RE = 0.047
+ RC = 0.041
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 2.915E-10
+ VJE = 0.73
+ MJE = 0.375
+ TF = 1.1E-09
+ XTF = 21
+ VTF = 0.7
+ ITF = 3
+ PTF = 0
+ CJC = 8.8E-11
+ VJC = 0.575
+ MJC = 0.4
+ XCJC = 1
+ TR = 1.5E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.4
.MODEL DIODE D
+ IS = 3E-16
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.6
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS5420D
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 4 A
* VCEO = 20 V 
* hFE  = min. 250 typ. 400  @ 2V/500mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 37/2005
* Simulator: Spice 3
*
********************************************************** 
*#
.SUBCKT PBSS5420D 1 2 3
*
Q1 1 2 3 PBSS5420D
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5420D PNP 
+ IS = 6.826E-013 
+ NF = 0.9637 
+ ISE = 3.983E-014 
+ NE = 1.228 
+ BF = 420 
+ IKF = 3.4 
+ VAF = 20 
+ NR = 0.96 
+ ISC = 1E-018 
+ NC = 2.7 
+ BR = 160 
+ IKR = 0.7 
+ VAR = 6.9 
+ RB = 20 
+ IRB = 0.001 
+ RBM = 0.49 
+ RE = 0.037 
+ RC = 0.035 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 5.049E-010 
+ VJE = 1 
+ MJE = 0.469 
+ TF = 2.3E-009 
+ XTF = 0.4 
+ VTF = 15 
+ ITF = 0.5 
+ PTF = 0 
+ CJC = 2.529E-010 
+ VJC = 0.5406 
+ MJC = 0.3499 
+ XCJC = 1 
+ TR = 3.3E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.748E-013 
+ N = 1.2 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5440D
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 4 A
* VCEO = 40 V 
* hFE  = min. 200  @ 2V/500mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 37/2005
* Simulator: Spice 3
*
********************************************************** 
*#
.SUBCKT PBSS5440D 1 2 3
*
Q1 1 2 3 PBSS5440D
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5440D PNP 
+   IS = 6.033E-013 
+   NF = 0.9576 
+   ISE = 4.885E-014 
+   NE = 1.233 
+   BF = 380 
+   IKF = 1.95 
+   VAF = 12.8 
+   NR = 0.9592 
+   ISC = 1E-018 
+   NC = 3 
+   BR = 68 
+   IKR = 1.5 
+   VAR = 6.9 
+   RB = 15.2 
+   IRB = 0.001 
+   RBM = 0.75 
+   RE = 0.035 
+   RC = 0.018 
+   XTB = 0 
+   EG = 1.11 
+   XTI = 3 
+   CJE = 4.977E-010 
+   VJE = 0.8119 
+   MJE = 0.3949 
+   TF = 2.35E-009 
+   XTF = 15 
+   VTF = 5 
+   ITF = 10 
+   PTF = 0 
+   CJC = 1.698E-010 
+   VJC = 0.4041 
+   MJC = 0.2934 
+   XCJC = 1 
+   TR = 2.5E-009 
+   CJS = 0 
+   VJS = 0.75 
+   MJS = 0.333 
+   FC = 0.8 
.MODEL DIODE D 
+   IS = 2.586E-013 
+   N = 1.197 
+   BV = 1000 
+   IBV = 0.001 
+   RS = 1000 
+   CJO = 0 
+   VJ = 1 
+   M = 0.9 
+   FC = 0 
+   TT = 0 
+   EG = 1.1 
.ENDS
**
**********************************************************
*
* PBSS5480X
*
* NXP Semiconductors
*
* Low-VCEsat transistor PNP
* Ic   = 4 A
* Vceo = 80  V 
* hFE  = 280 @ 2V/1A (typical)
* 
*  
* 
* Package: SOT89
*
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 19/2010 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5480X 1 2 3
*
Q1 1 2 3 MAIN
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse 
* mode of operation and does not reflect a physical device.
*
.MODEL MAIN PNP
+ IS = 8.661E-013
+ NF = 0.9671
+ ISE = 1.06E-013
+ NE = 1.28
+ BF = 262
+ IKF = 5.361
+ VAF = 36
+ NR = 0.967
+ ISC = 5.743E-014
+ NC = 1.196
+ BR = 33
+ IKR = 15
+ VAR = 29.61
+ RB = 7
+ IRB = 5E-005
+ RBM = 1.2
+ RE = 0.01876
+ RC = 0.02348
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.883E-010
+ VJE = 0.7052
+ MJE = 0.3593
+ TF = 1.65E-009
+ XTF = 2
+ VTF = 1.8
+ ITF = 0.8
+ PTF = 0
+ CJC = 2.088E-010
+ VJC = 0.8229
+ MJC = 0.474
+ XCJC = 1
+ TR = 9.5E-009
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.9
.MODEL DIODE D
+ IS = 5.994E-013
+ N = 1.167
+ BV = 1000
+ IBV = 0.001
+ RS = 239.4
+ CJO = 0
+ VJ = 1
+ M = 0.9
+ FC = 0
+ TT = 0
+ EG = 1.1
+ XTI = 3
.ENDS*
**********************************************************
*
* PBSS5540X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 4 A
* VCEO = 40 V 
* hFE  = min. 250  @ 2V/500mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter 
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 06/2004
* Simulator: Spice 3
*
********************************************************** 
*#
.MODEL QPBSS5540X PNP 
+ IS = 1.784E-012 
+ NF = 0.9891 
+ ISE = 7.679E-014 
+ NE = 1.384 
+ BF = 367 
+ IKF = 7.7 
+ VAF = 35 
+ NR = 0.988 
+ ISC = 1.379E-013 
+ NC = 1.169 
+ BR = 105 
+ IKR = 1.2 
+ VAR = 8 
+ RB = 3 
+ IRB = 0.0012 
+ RBM = 0.951 
+ RE = 0.019 
+ RC = 0.014 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.721E-010 
+ VJE = 0.68 
+ MJE = 0.365 
+ TF = 1.62E-009 
+ XTF = 22 
+ VTF = 1.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 2.76E-010 
+ VJC = 0.6352 
+ MJC = 0.4041 
+ XCJC = 1 
+ TR = 5E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PBSS5540Z
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 5 A
* VCEO = 40 V 
* hFE  = min. 250 typ.350  @ 2V/500mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base 
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* 
* Simulator: Spice 2
*
********************************************************** 
*#
.SUBCKT PBSS5540Z 1 2 3
*
Q1 1 2 3 PBSS5540Z
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS5540Z PNP
+ IS = 2.366E-12
+ NF = 0.9792
+ ISE = 1.051E-13
+ NE = 1.342
+ BF = 350
+ IKF = 7.7
+ VAF = 35
+ NR = 0.98
+ ISC = 3.696E-13
+ NC = 1.127
+ BR = 150
+ IKR = 1.8
+ VAR = 8
+ RB = 3
+ IRB = 0.00075
+ RBM = 1.152
+ RE = 0.033
+ RC = 0.026
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 8.721E-10
+ VJE = 0.68
+ MJE = 0.365
+ TF = 2.3E-09
+ XTF = 15
+ VTF = 10
+ ITF = 1.5
+ PTF = 0
+ CJC = 2.76E-10
+ VJC = 0.6352
+ MJC = 0.4041
+ XCJC = 1
+ TR = 5E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.5
.MODEL DIODE D
+ IS = 3.695E-15
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.9
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS
**
**********************************************************
*
* PBSS5560PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 5 A
* VCEO = 60 V 
* hFE  = typ.230  @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#          
.SUBCKT PBSS5560PA 1 2 3 
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 PBSS5560PA 0.7076
Q2 11 2 3 PBSS5560PA 0.2924 
D1 1 2 DIODE 
D2 11 2 DIODE 
RQ 1 11 0.912 
*
.MODEL PBSS5560PA PNP 
+ IS = 1.658E-012 
+ NF = 0.9694 
+ ISE = 9.8E-014 
+ NE = 1.383 
+ BF = 320 
+ IKF = 5 
+ VAF = 30 
+ NR = 0.97 
+ ISC = 1.912E-013 
+ NC = 1.113 
+ BR = 98.64 
+ IKR = 1.059 
+ VAR = 15 
+ RB = 7 
+ IRB = 0.001 
+ RBM = 1.5 
+ RE = 0.02693 
+ RC = 0.01136 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.583E-010 
+ VJE = 0.7459 
+ MJE = 0.3843 
+ TF = 1.85E-009 
+ XTF = 6 
+ VTF = 1.7 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 2.084E-010 
+ VJC = 0.8187 
+ MJC = 0.4608 
+ XCJC = 1 
+ TR = 6E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.095E-015 
+ N = 0.8864 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2360 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5580PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 4,5 A
* VCEO = 80 V 
* hFE  = typ.225  @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5580PA 1 2 3
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 PBSS5580PA 0.7015
Q2 11 2 3 PBSS5580PA 0.2985
D1 1 2 DIODE 
D2 11 2 DIODE
RQ 1 11 1.947 
*
.MODEL PBSS5580PA PNP 
+ IS = 1.658E-012 
+ NF = 0.9695 
+ ISE = 1.509E-013 
+ NE = 1.36 
+ BF = 282.2 
+ IKF = 5.031 
+ VAF = 51 
+ NR = 0.9689 
+ ISC = 1.38E-013 
+ NC = 1.118 
+ BR = 97.93 
+ IKR = 0.4854 
+ VAR = 27.57 
+ RB = 7 
+ IRB = 0.0015 
+ RBM = 1.51 
+ RE = 0.02372 
+ RC = 0.01387 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.56E-010 
+ VJE = 0.7269 
+ MJE = 0.3747 
+ TF = 1.55E-009 
+ XTF = 6 
+ VTF = 2 
+ ITF = 1 
+ PTF = 0 
+ CJC = 1.63E-010 
+ VJC = 0.8083 
+ MJC = 0.4803 
+ XCJC = 1 
+ TR = 1.6E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 2.05E-014 
+ N = 1.013 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 742.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5612PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 6 A
* VCEO = 12 V 
* hFE  = typ.290  @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5612PA 1 2 3 
*
Q1 1 2 3 PBSS5612PA 
D1 1 2 DIODE
*
* Diode D1 is dedicated to improve modeling of reverse   *mode  operation
* and does not reflect a physical device.
*
.MODEL PBSS5612PA PNP 
+ IS = 2.641E-012 
+ NF = 0.9696 
+ ISE = 2.307E-013 
+ NE = 1.523 
+ BF = 386 
+ IKF = 5.834 
+ VAF = 13.49 
+ NR = 0.9701 
+ ISC = 1.054E-014 
+ NC = 1.216 
+ BR = 280.5 
+ IKR = 1.492 
+ VAR = 10.6 
+ RB = 9 
+ IRB = 0.0007 
+ RBM = 1.1 
+ RE = 0.02527 
+ RC = 0.01708 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.085E-010 
+ VJE = 0.8217 
+ MJE = 0.4024 
+ TF = 4.2E-009 
+ XTF = 0.5 
+ VTF = 15 
+ ITF = 0.6 
+ PTF = 3 
+ CJC = 3.854E-010 
+ VJC = 0.4783 
+ MJC = 0.329 
+ XCJC = 0.8 
+ TR = 1E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
.MODEL DIODE D 
+ IS = 2.312E-013 
+ N = 1.216 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.719E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5620PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 6 A
* VCEO = 20 V 
* hFE  = typ.295 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5620PA 1 2 3
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices..
*
Q1 1 2 3 PBSS5620PA 0.8378 
Q2 11 2 3 PBSS5620PA 0.1622
RQ 1 11 1.094 
D1 1 2 DIODE 
D2 11 2 DIODE 
*
.MODEL PBSS5620PA PNP 
+ IS = 3.243E-012 
+ NF = 0.9702 
+ ISE = 7.787E-014 
+ NE = 1.236 
+ BF = 405 
+ IKF = 4.055 
+ VAF = 23.26 
+ NR = 0.9695 
+ ISC = 7.424E-015 
+ NC = 0.9889 
+ BR = 137.8 
+ IKR = 1.832 
+ VAR = 12.57 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.5 
+ RE = 0.01392 
+ RC = 0.02356 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.151E-010 
+ VJE = 0.7645 
+ MJE = 0.3937 
+ TF = 2E-009 
+ XTF = 5 
+ VTF = 1.8 
+ ITF = 3 
+ PTF = 0 
+ CJC = 1.96E-010 
+ VJC = 0.4181 
+ MJC = 0.3095 
+ XCJC = 1 
+ TR = 9E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.949E-013 
+ N = 1.128 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1514 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS5630PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 6 A
* VCEO = 30 V 
* hFE  = typ.295 @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS5630PA 1 2 3       
*
* Diodes D1/D2, transistor Q2 and resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 PBSS5630PA 0.8378 
Q2 11 2 3 PBSS5630PA 0.1622 
RQ 1 11 1.094 
D1 1 2 DIODE 
D2 11 2 DIODE 
*
.MODEL PBSS5630PA PNP 
+ IS = 3.243E-012 
+ NF = 0.9702 
+ ISE = 7.787E-014 
+ NE = 1.236 
+ BF = 405 
+ IKF = 4.055 
+ VAF = 23.26 
+ NR = 0.9695 
+ ISC = 7.424E-015 
+ NC = 0.9889 
+ BR = 137.8 
+ IKR = 1.832 
+ VAR = 12.57 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.5 
+ RE = 0.01392 
+ RC = 0.02356 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.151E-010 
+ VJE = 0.7645 
+ MJE = 0.3937 
+ TF = 2E-009 
+ XTF = 5 
+ VTF = 1.8 
+ ITF = 3 
+ PTF = 0 
+ CJC = 1.96E-010 
+ VJC = 0.4181 
+ MJC = 0.3095 
+ XCJC = 1 
+ TR = 9E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.949E-013 
+ N = 1.128 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1514 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8110D
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 500  @ 10V/250mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8110D 1 2 3
*
Q1 1 2 3 PBSS8110D
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS8110D NPN 
+ IS = 3.138E-013 
+ NF = 0.9857 
+ ISE = 4.405E-015 
+ NE = 1.299 
+ BF = 300 
+ IKF = 0.38 
+ VAF = 23 
+ NR = 0.9809 
+ ISC = 1.35E-016 
+ NC = 0.998 
+ BR = 55 
+ IKR = 2.8 
+ VAR = 48 
+ RB = 10 
+ IRB = 0.000431 
+ RBM = 5.92 
+ RE = 0.05 
+ RC = 0.058 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.86E-010 
+ VJE = 0.7299 
+ MJE = 0.3486 
+ TF = 6E-010 
+ XTF = 27 
+ VTF = 1.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 2.39E-011 
+ VJC = 0.2734 
+ MJC = 0.3734 
+ XCJC = 1 
+ TR = 5.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.185E-013 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8110T
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 500  @ 10V/250mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: collector
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8110T 1 2 3 
*
Q1 1 2 3 PBSS8110T
D1 2 1 DIODE
* 
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS8110T NPN 
+ IS = 3.138E-013 
+ NF = 0.9857 
+ ISE = 4.405E-015 
+ NE = 1.299 
+ BF = 300 
+ IKF = 0.38 
+ VAF = 23 
+ NR = 0.9809 
+ ISC = 1.35E-016 
+ NC = 0.998 
+ BR = 55 
+ IKR = 2.8 
+ VAR = 48 
+ RB = 10 
+ IRB = 0.000431 
+ RBM = 5.92 
+ RE = 0.05 
+ RC = 0.058 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.86E-010 
+ VJE = 0.7299 
+ MJE = 0.3486 
+ TF = 6E-010 
+ XTF = 27 
+ VTF = 1.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 2.39E-011 
+ VJC = 0.2734 
+ MJC = 0.3734 
+ XCJC = 1 
+ TR = 5.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.185E-013 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8110X
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 500  @ 10V/250mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter 
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8110X 1 2 3
*
Q1 1 2 3 PBSS8110X
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS8110X NPN 
+ IS = 3.138E-013 
+ NF = 0.9857 
+ ISE = 4.405E-015 
+ NE = 1.299 
+ BF = 300 
+ IKF = 0.38 
+ VAF = 23 
+ NR = 0.9809 
+ ISC = 1.35E-016 
+ NC = 0.998 
+ BR = 55 
+ IKR = 2.8 
+ VAR = 48 
+ RB = 10 
+ IRB = 0.000431 
+ RBM = 5.92 
+ RE = 0.05 
+ RC = 0.058 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.86E-010 
+ VJE = 0.7299 
+ MJE = 0.3486 
+ TF = 6E-010 
+ XTF = 27 
+ VTF = 1.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 2.39E-011 
+ VJC = 0.2734 
+ MJC = 0.3734 
+ XCJC = 1 
+ TR = 5.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.185E-013 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8110Y
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 500  @ 10V/250mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8110Y 1 2 3
*
Q1 1 2 3 PBSS8110Y
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS8110Y NPN 
+ IS = 3.138E-013 
+ NF = 0.9857 
+ ISE = 4.405E-015 
+ NE = 1.299 
+ BF = 300 
+ IKF = 0.38 
+ VAF = 23 
+ NR = 0.9809 
+ ISC = 1.35E-016 
+ NC = 0.998 
+ BR = 55 
+ IKR = 2.8 
+ VAR = 48 
+ RB = 10 
+ IRB = 0.000431 
+ RBM = 5.92 
+ RE = 0.05 
+ RC = 0.058 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.86E-010 
+ VJE = 0.7299 
+ MJE = 0.3486 
+ TF = 6E-010 
+ XTF = 27 
+ VTF = 1.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 2.39E-011 
+ VJC = 0.2734 
+ MJC = 0.3734 
+ XCJC = 1 
+ TR = 5.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.185E-013 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8110Z
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 500  @ 10V/250mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8110Z 1 2 3
*
Q1 1 2 3 PBSS8110Z
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS8110Z NPN 
+ IS = 3.138E-013 
+ NF = 0.9857 
+ ISE = 4.405E-015 
+ NE = 1.299 
+ BF = 300 
+ IKF = 0.38 
+ VAF = 23 
+ NR = 0.9809 
+ ISC = 1.35E-016 
+ NC = 0.998 
+ BR = 55 
+ IKR = 2.8 
+ VAR = 48 
+ RB = 10 
+ IRB = 0.000431 
+ RBM = 5.92 
+ RE = 0.05 
+ RC = 0.058 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.86E-010 
+ VJE = 0.7299 
+ MJE = 0.3486 
+ TF = 6E-010 
+ XTF = 27 
+ VTF = 1.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 2.39E-011 
+ VJC = 0.2734 
+ MJC = 0.3734 
+ XCJC = 1 
+ TR = 5.1E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.185E-013 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS8510PA
*
* NXP Semiconductors
*
* Low VCEsat NPN BISS transistor
* IC   = 5,2 A
* VCEO = 100 V 
* hFE  = typ. 145  @ 2V/2A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 20/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS8510PA 1 2 3 
*
Q1 1 2 3 PBSS8510PA 
D1 2 1 DIODE
* 
* Diode D1 is dedicated to improve modeling of reverse  
* mode operation
* and does not reflect a physical device.
* 
.MODEL PBSS8510PA NPN 
+ IS = 1.167E-012 
+ NF = 0.9645 
+ ISE = 2.594E-014 
+ NE = 1.301 
+ BF = 314 
+ IKF = 1.3 
+ VAF = 12.32 
+ NR = 0.9643 
+ ISC = 3.959E-013 
+ NC = 1.352 
+ BR = 73.4 
+ IKR = 31.66 
+ VAR = 29.35 
+ RB = 20.95 
+ IRB = 0.0007091 
+ RBM = 2.312 
+ RE = 0.02123 
+ RC = 0.02556 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.438E-010 
+ VJE = 0.7569 
+ MJE = 0.3563 
+ TF = 9E-010 
+ XTF = 8 
+ VTF = 1 
+ ITF = 1 
+ PTF = 0 
+ CJC = 7.251E-011 
+ VJC = 0.16 
+ MJC = 0.3401 
+ XCJC = 1 
+ TR = 1.7E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.MODEL DIODE D 
+ IS = 7.574E-014 
+ N = 0.9624 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 437.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9110D
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 5,2 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/250mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 22/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9110D 1 2 3
*
Q1 1 2 3 PBSS9110D
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS9110D PNP 
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9110T
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 47/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9110T 1 2 3
*
Q1 1 2 3 PBSS9110T
D1 1 2 DIODE
* 
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation. 
*
.MODEL PBSS9110T PNP 
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9110X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/0,5A
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9110X 1 2 3
* 
Q1 1 2 3 PBSS9110X 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS9110X PNP 
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9110X
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/0,5A
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Collector;Emitter
* Package Pin 2;5: Collector;Collector
* Package Pin 3;6: Base;Collector
*
*
* Extraction date (week/year): 31/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9110Y 1 2 3
*
Q1 1 2 3 PBSS9110Y
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS9110Y PNP 
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9110Z
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/0,5A
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9110Z 1 2 3
*
Q1 1 2 3 PBSS9110Z
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS9110Z PNP
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PBSS9410PA
*
* NXP Semiconductors
*
* Low VCEsat PNP BISS transistor
* IC   = 1 A
* VCEO = 100 V 
* hFE  = 150 - 450  @ 5V/0,5A
*
*
*
* Package: SOT 1061
* 
* Package Pin 1: Base
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PBSS9410PA 1 2 3
*
Q1 1 2 3 PBSS9410PA
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBSS9410PA PNP
+ IS = 3.155E-013 
+ NF = 0.9898 
+ ISE = 3.686E-014 
+ NE = 1.374 
+ BF = 300 
+ IKF = 0.4 
+ VAF = 25 
+ NR = 0.988 
+ ISC = 5E-014 
+ NC = 2.742 
+ BR = 18 
+ IKR = 5 
+ VAR = 15 
+ RB = 10 
+ IRB = 0.0007 
+ RBM = 1.85 
+ RE = 0.06 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.165E-010 
+ VJE = 0.8147 
+ MJE = 0.4025 
+ TF = 1.125E-009 
+ XTF = 1.2 
+ VTF = 2.2 
+ ITF = 0.9 
+ PTF = 0 
+ CJC = 4.783E-011 
+ VJC = 1 
+ MJC = 0.53 
+ XCJC = 1 
+ TR = 4E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99
.MODEL DIODE D 
+ IS = 9.765E-014 
+ N = 1.021 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113EE
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 30  @ 5V/40mA
* R1   = 1 kohm
* R2   = 1 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 50/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113EE 1 2 3
*
Q1 1 2 3 PDTA113EE
D1 1 2 DIODE
*
.MODEL PDTA113EE PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113EM
*
* NXP Semiconductors
*
* General Purpose PNP Transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 30  @ 5V/40mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 50/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113EM 1 2 3
* 
Q1 1 2 3 PDTA113EM
D1 1 2 DIODE
*
.MODEL PDTA113EM PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ET
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 30  @ 5V/40mA
* R1   = 1 Kohm
* R2   = 1 kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 03/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ET 1 2 3
* 
Q1 1 2 3 PDTA113ET  
D1 1 2 DIODE
*
.MODEL PDTA113ET PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113EU
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 30  @ 5V/40mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113EU 1 2 3
* 
Q1 1 2 3 PDTA113EU 
D1 1 2 DIODE
*
.MODEL PDTA113EU PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ZE
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35  @ 5V/5mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 50/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ZE 1 2 3 
*
Q1 1 2 3 PDTA113ZE 
D1 1 2 DIODE
*
.MODEL PDTA113ZE PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ZK
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35  @ 5V/5mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ZK 1 2 3
* 
Q1 1 2 3 PDTA113ZK 
D1 1 2 DIODE 
*
.MODEL PDTA113ZK PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ZM
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35  @ 5V/5mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 50/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ZM 1 2 3
* 
Q1 1 2 3 PDTA113ZM 
D1 1 2 DIODE
*
.MODEL PDTA113ZM PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ZT
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35  @ 5V/5mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 03/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ZT 1 2 3
*
Q1 1 2 3 PDTA113ZT 
D1 1 2 DIODE
*
.MODEL PDTA113ZT PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA113ZU
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35  @ 5V/5mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA113ZU 1 2 3
*
Q1 1 2 3 PDTA113ZU 
D1 1 2 DIODE 
*
.MODEL PDTA113ZU PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA114EE
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
* 
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114EK
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114EK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114EMM
*
* NXP Semiconductors
*
* PNP resistor-equipped transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 65 @ 10V/5mA (typ.)
* R1   = 10k OHM
* R2   = 10k OHM
*
* Package: SOT1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT PDTA114EMM 1 2 3
*
Q1 1 2 3 MAIN
D1 1 2 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN PNP
+ IS = 4.829E-015
+ NF = 0.9813
+ ISE = 2.261E-015
+ NE = 1.444
+ BF = 265.5
+ IKF = 0.045
+ VAF = 18.56
+ NR = 0.9775
+ ISC = 7.145E-014
+ NC = 1.432
+ BR = 6.5
+ IKR = 200
+ VAR = 24.01
+ RB = 150
+ IRB = 7.5E-005
+ RBM = 4.9
+ RE = 0.3396
+ RC = 0.3819
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.416E-012
+ VJE = 0.7708
+ MJE = 0.3653
+ TF = 9.8E-010
+ XTF = 20
+ VTF = 5
+ ITF = 0.6
+ PTF = 0
+ CJC = 7.141E-012
+ VJC = 0.5484
+ MJC = 0.528
+ XCJC = 1
+ TR = 5.4E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.79
.MODEL DIODE D
+ IS = 1.355E-015
+ N = 0.9932
+ BV = 1000
+ IBV = 0.001
+ RS = 6532
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PDTA114EM
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114ES
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 5  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 54
* 
* Package Pin 1: Base 
* Package Pin 2: Collector
* Package Pin 3: Emitter 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114ES PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114ET
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 5  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114EU
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min 5  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114TE
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114TE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114TM
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* Extraction date (week/year): 46/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114TT
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114TU
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base (input)
* Package Pin 2: Emitter (GND)
* Package Pin 3: Collector (output)
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114YE
*
* NXP Semiconductors
*
* Resistor Equipped PNP Transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114YE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114YK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114YK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114YM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114YM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114YT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA114YT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA114YU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA114YU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115EE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL PDTA115EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
*  PDTA115ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 06/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115EU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115TE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
* 
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 36/2004
* Simulator: Spice 3
*
**********************************************************
*# 
.MODEL QPDTA115TE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115TM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 36/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 29/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA115TU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA115TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123EE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123EK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123EK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA123ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123EU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123JE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R1   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA123JE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123JK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R1   = 4.7 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123JK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123JM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R1   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123JM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123JT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R1   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123JT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123JU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R1   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123JU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123TM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123TU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA123TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA123YE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 10  Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA123YE 1 2 3
*
Q1 1 2 3 PDTA123YE 
D1 1 2 DIODE
*
.MODEL PDTA123YE PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA123YK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 10  Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA123YK 1 2 3
* 
Q1 1 2 3 PDTA123YK 
D1 1 2 DIODE 
*
.MODEL PDTA123YK PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA123YM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 10  Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA123YM 1 2 3
*
Q1 1 2 3 PDTA123YM 
D1 1 2 DIODE
*
.MODEL PDTA123YM PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA123YT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 10  Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA123YT 1 2 3
* 
Q1 1 2 3 PDTA123YT 
D1 1 2 DIODE
*
.MODEL PDTA123YT PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA123YU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 10  Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA123YU 1 2 3
* 
Q1 1 2 3 PDTA123YU 
D1 1 2 DIODE
*
.MODEL PDTA123YU PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA124EE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA124EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124EK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA124EK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA124ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124EU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 2.2 Kohm
* R1   = 2.2 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA124EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124TE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/100mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*  Extraction date (week/year): 08/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124TE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA124TM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/100mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*  Extraction date (week/year): 08/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA124TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/100mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 06/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA124TU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/100mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA124XE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA124XE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124XM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124XM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124XT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124XT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA124XU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA124XU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143EE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143EK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143EK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter 
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 54
* 
* Package Pin 1: Base 
* Package Pin 2: Collector 
* Package Pin 3: Emitter 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143ES PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143EU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143TE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143TE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA143TK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143TK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA143TM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA143TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA143TU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA143XE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143XE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143XM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143XM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143XT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143XT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143XU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143XU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ZE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143ZE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ZK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143ZK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ZM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143ZM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ZT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA143ZT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA143ZU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 25/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA143ZU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144EE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA144EE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144EK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA144EK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144EM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144EM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA144ET PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144EU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA144EU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144TE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
* 
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144TE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA144TM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144TM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA144TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 06/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144TT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA144TU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144TU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTA144VE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA144VE 1 2 3 
*
Q1 1 2 3 PDTA144VE 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTA144VE PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA144VM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA144VM 1 2 3 
*
Q1 1 2 3 PDTA144VM 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTA144VM PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA144VT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA144VT 1 2 3
* 
Q1 1 2 3 PDTA144VT 
D1 1 2 DIODE 
*
.MODEL PDTA144VT PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA144VU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA144VU 1 2 3
* 
Q1 1 2 3 PDTA144VU 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTA144VU PNP 
+ IS = 1.131E-014 
+ NF = 0.9943 
+ ISE = 6.781E-016 
+ NE = 1.252 
+ BF = 240 
+ IKF = 0.1 
+ VAF = 60 
+ NR = 0.989 
+ ISC = 2.764E-014 
+ NC = 1.368 
+ BR = 22 
+ IKR = 0.013 
+ VAR = 27 
+ RB = 67.45 
+ IRB = 0.0001 
+ RBM = 1.77 
+ RE = 0.432 
+ RC = 0.558 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 9.397E-012 
+ VJE = 0.8 
+ MJE = 0.4178 
+ TF = 9.2E-010 
+ XTF = 10 
+ VTF = 1.5 
+ ITF = 0.35 
+ PTF = 0 
+ CJC = 9.486E-012 
+ VJC = 0.8585 
+ MJC = 0.5993 
+ XCJC = 1 
+ TR = 1.2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.882E-015 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTA144WE
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 06/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144WE PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144WK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144WK PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144WM
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144WM PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144WT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTA144WT PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA144WU
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTA144WU PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PDTA323TK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 15 V 
* hFE  = min. 100 typ. 250 @ 5V/50mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTA323TK 1 2 3
* 
Q1 1 2 3 PDTA323TK 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTA323TK PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB113ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 33 @ 5V/50mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB113ET 1 2 3 
* 
Q1 1 2 3 PDTB113ET 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB113ET PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB113ZT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70 @ 5V/50mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB113ZT 1 2 3
*
Q1 1 2 3 PDTB113ZT 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB113ZT PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123EK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 40  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123EK 1 2 3
* 
Q1 1 2 3 PDTB123EK 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB123EK PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123ET
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 40  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123ET 1 2 3 
* 
Q1 1 2 3 PDTB123ET 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB123ET PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123TK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 100 typ. 250   @ 5V/50mA
* R1   = 2.2 Kohm
* 
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123TK 1 2 3 
* 
Q1 1 2 3 PDTB123TK 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB123TK PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123TT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 100 typ. 250   @ 5V/50mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123TT 1 2 3
*
Q1 1 2 3 PBTB123TT 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PBTB123TT PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123YK
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123YK 1 2 3
* 
Q1 1 2 3 PDTB123YK 
D1 1 2 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB123YK PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTB123YT
*
* NXP Semiconductors
*
* Resistor equipped PNP transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTB123YT 1 2 3
* 
Q1 1 2 3 PDTB123YT 
D1 1 2 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTB123YT PNP 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC114EE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114EE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114EK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114EK NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114EMM
*
* NXP Semiconductors
*
* NPN resistor-equipped transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 65 @ 10V/5mA (typ.)
* R1   = 10k OHM
* R2   = 10k OHM
*
* Package: SOT1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector 
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT PDTC114EMM 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 5.573E-015
+ NF = 0.9784
+ ISE = 4.022E-016
+ NE = 1.235
+ BF = 330.4
+ IKF = 0.08063
+ VAF = 45.06
+ NR = 0.9782
+ ISC = 4.406E-014
+ NC = 1.813
+ BR = 14.27
+ IKR = 10
+ VAR = 100
+ RB = 76
+ IRB = 0.00015
+ RBM = 1.2
+ RE = 0.4168
+ RC = 0.5702
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.922E-012
+ VJE = 0.6002
+ MJE = 0.3243
+ TF = 5.57E-010
+ XTF = 25
+ VTF = 2
+ ITF = 0.18
+ PTF = 0
+ CJC = 2.583E-012
+ VJC = 0.3802
+ MJC = 0.252
+ XCJC = 1
+ TR = 5.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 9.329E-016
+ N = 0.9929
+ BV = 1000
+ IBV = 0.001
+ RS = 557.3
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PDTC114EM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 22/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC114EM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114ET NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114EU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114EU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114TE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114TE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114TK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114TK NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114TM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC114TM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114TT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114TT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114TU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5V/1mA
* R1   = 10 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114TU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114YE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114YE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114YK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC114YK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114YM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC114YM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114YT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114YT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC114YU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC114YU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115EE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115EE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115EM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115EM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115ET NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115EU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115EU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115TE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 36/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115TE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115TK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115TK NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115TM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 36/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115TM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115TT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1  = 100 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 29/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115TT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC115TU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/1mA
* R1   = 100 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 49/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC115TU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123EE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123EE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123EK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123EK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123EM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123EM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC123ET NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123EU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123EU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123JE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC123JE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123JK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123JK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123JM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123JM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123JT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC123JT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123JU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123JU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123TE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC123TE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123TM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123TM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123TT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* 
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123TT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123TU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC123TU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC123YE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC123YE 1 2 3
*       
Q1 1 2 3 PDTC123YE 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC123YE NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC123Yk 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC123YK 1 2 3
*       
Q1 1 2 3 PDTC123YK 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC123YK NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC123YM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC123YM 1 2 3
*
Q1 1 2 3 PDTC123YM 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC123YM NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC123YT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC123YT 1 2 3 
* 
Q1 1 2 3 PDTC123YT 
D1 2 1 DIODE 
*
.MODEL PDTC123YT NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC123YU
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 35 @ 5V/5mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC123YU 1 2 3 
*
Q1 1 2 3 PDTC123YU
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC123YU NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC124EE
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC124EE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124EK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 490
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC124EK NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124EMM
*
* NXP Semiconductors
*
* NPN resistor-equipped transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 120 @ 10V/5mA (typ.)
* R1   = 22k OHM
* R2   = 22k OHM
*
* Package: SOT1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector 
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT PDTC124EMM 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 5.573E-015
+ NF = 0.9784
+ ISE = 4.022E-016
+ NE = 1.235
+ BF = 330.4
+ IKF = 0.08063
+ VAF = 45.06
+ NR = 0.9782
+ ISC = 4.406E-014
+ NC = 1.813
+ BR = 14.27
+ IKR = 10
+ VAR = 100
+ RB = 76
+ IRB = 0.00015
+ RBM = 1.2
+ RE = 0.4168
+ RC = 0.5702
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.922E-012
+ VJE = 0.6002
+ MJE = 0.3243
+ TF = 5.57E-010
+ XTF = 25
+ VTF = 2
+ ITF = 0.18
+ PTF = 0
+ CJC = 2.583E-012
+ VJC = 0.3802
+ MJC = 0.252
+ XCJC = 1
+ TR = 5.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 9.329E-016
+ N = 0.9929
+ BV = 1000
+ IBV = 0.001
+ RS = 557.3
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PDTC124EM
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124EM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124ET 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC124ET NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124EU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC124EU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124TE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 Kohm
*
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124TE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124TM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 Kohm
* 
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124TM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124TT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 Kohm
* 
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124TT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124TU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 Kohm
* 
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 11/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124TU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124XE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 47 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC124XE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124XM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 47 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124XM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124XT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 47 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124XT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC124XU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 47 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC124XU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143EE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143EE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143EK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143EK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143EM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143EM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ES 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 54
* 
* Package Pin 1: Base 
* Package Pin 2: Collector
* Package Pin 3: Emitter 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143ES NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ET 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143ET NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143EU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143EU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143TE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
* 
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143TE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143TM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
* 
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143TM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143TT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143TT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143TU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
* 
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143TU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143XE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143XE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143XK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143XK NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143XM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2004 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143XM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143XT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143XT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143XU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 10/2003 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143XU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ZE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143ZE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ZK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143ZK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ZM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143ZM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ZT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC143ZT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC143ZU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC143ZU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144EE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144EE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144EK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144EK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144EMM
*
* NXP Semiconductors
*
* NPN resistor-equipped transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 170 @ 10V/5mA (typ.)
* R1   = 47k OHM
* R2   = 47k OHM
*
* Package: SOT1263
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector 
* 
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3        
*
**********************************************************
*#
.SUBCKT PDTC144EMM 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 5.573E-015
+ NF = 0.9784
+ ISE = 4.022E-016
+ NE = 1.235
+ BF = 330.4
+ IKF = 0.08063
+ VAF = 45.06
+ NR = 0.9782
+ ISC = 4.406E-014
+ NC = 1.813
+ BR = 14.27
+ IKR = 10
+ VAR = 100
+ RB = 76
+ IRB = 0.00015
+ RBM = 1.2
+ RE = 0.4168
+ RC = 0.5702
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.922E-012
+ VJE = 0.6002
+ MJE = 0.3243
+ TF = 5.57E-010
+ XTF = 25
+ VTF = 2
+ ITF = 0.18
+ PTF = 0
+ CJC = 2.583E-012
+ VJC = 0.3802
+ MJC = 0.252
+ XCJC = 1
+ TR = 5.5E-008
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 9.329E-016
+ N = 0.9929
+ BV = 1000
+ IBV = 0.001
+ RS = 557.3
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PDTC144EM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144EM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144ET 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144ET NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144EU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144EU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144TE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
* 
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144TE NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144TM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
* 
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 09/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144TM NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144TT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
* 
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144TT NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144TU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm
* 
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 26/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144TU NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144VE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC144VE 1 2 3
* 
Q1 1 2 3 PDTC144VE 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC144VE NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC144VK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC144VK 1 2 3
* 
Q1 1 2 3 PDTC144VK 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC144VK NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC144VM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC144VM 1 2 3
* 
Q1 1 2 3 PDTC144VM 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC144VM NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC144VT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 03/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC144VT 1 2 3
* 
Q1 1 2 3 PDTC144VT 
D1 2 1 DIODE 
*
.MODEL PDTC144VT NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013 
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC144VU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 10 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTC144VU 1 2 3 
* 
Q1 1 2 3 PDTC144VU 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTC144VU NPN 
+ IS = 1.947E-014 
+ NF = 0.9958 
+ ISE = 2.513E-014 
+ NE = 2.21 
+ BF = 377 
+ IKF = 0.22 
+ VAF = 76 
+ NR = 0.994 
+ ISC = 3E-013
+ NC = 2 
+ BR = 20 
+ IKR = 0.16 
+ VAR = 16 
+ RB = 116 
+ IRB = 0.000145 
+ RBM = 4.5 
+ RE = 0.29 
+ RC = 0.58 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.01E-011 
+ VJE = 0.7749 
+ MJE = 0.377 
+ TF = 5.1E-010 
+ XTF = 6 
+ VTF = 2 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 2.89E-012 
+ VJC = 0.3 
+ MJC = 0.3026 
+ XCJC = 1 
+ TR = 2.3E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTC144WE 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 416
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144WE NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144WK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144WK NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144WM 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 883
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 31/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPDTC144WM NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144WT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144WT NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTC144WU 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 22 Kohm
*
* Package: SOT 323
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPDTC144WU NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PDTD113EK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 33 @ 5V/50mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD113EK 1 2 3 
* 
Q1 1 2 3 PDTD113EK 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD113EK NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD113ET 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 33 @ 5V/50mA
* R1   = 1 Kohm
* R2   = 1 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD113ET 1 2 3 
* 
Q1 1 2 3 PDTD113ET 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD113ET NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD113ZT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70 @ 5V/50mA
* R1   = 1 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 24/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD113ZT 1 2 3
* 
Q1 1 2 3 PDTD113ZT 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD113ZT NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123EK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123EK 1 2 3
* 
Q1 1 2 3 PDTD123EK 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123EK NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123ET
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 40 @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123ET 1 2 3
*
Q1 1 2 3 PDTD123ET 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123ET NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123TK
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 100 typ. 300 @ 5V/50mA
* R1   = 2.2 Kohm
* 
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123TK  1 2 3 
*
Q1 1 2 3 PDTD123TK 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123TK NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123TT 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 100 typ. 300 @ 5V/50mA
* R1   = 2.2 Kohm
*
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123TT  1 2 3 
* 
Q1 1 2 3 PDTD123TT 
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123TT NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123YK 
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 346
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 46/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123YK 1 2 3
*
Q1 1 2 3 PDTD123YK 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123YK NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PDTD123YT
*
* NXP Semiconductors
*
* Resistor equipped NPN transistor (RET)
* IC   = 500 mA
* VCEO = 50 V 
* hFE  = min. 70  @ 5V/50mA
* R1   = 2.2 Kohm
* R2   = 10 Kohm
*
* Package: SOT 23
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 27/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PDTD123YT 1 2 3
* 
Q1 1 2 3 PDTD123YT 
D1 2 1 DIODE 
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PDTD123YT NPN 
+ IS = 1.451E-013 
+ NF = 0.9728 
+ ISE = 1.154E-014 
+ NE = 1.587 
+ BF = 390 
+ IKF = 2.8 
+ VAF = 90 
+ NR = 0.972 
+ ISC = 1E-019 
+ NC = 2 
+ BR = 62 
+ IKR = 1000 
+ VAR = 26 
+ RB = 15 
+ IRB = 0.0008 
+ RBM = 3.14 
+ RE = 0.085 
+ RC = 0.13 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.077E-010 
+ VJE = 0.7015 
+ MJE = 0.3508 
+ TF = 5.4E-010 
+ XTF = 3.7 
+ VTF = 1.3 
+ ITF = 0.65 
+ PTF = 0 
+ CJC = 2.211E-011 
+ VJC = 0.5555 
+ MJC = 0.3983 
+ XCJC = 1 
+ TR = 3.45E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.85 
.MODEL DIODE D 
+ IS = 8.285E-015 
+ N = 1.03 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 500 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PEMB10
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/10mA
* R1   = 22 Kohm 
* R2   = 47 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB10 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMB11
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/5mA
* R1   = 10 Kohm 
* R2   = 10 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB11 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB13
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB13 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB14
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 Kohm 
* R2   = 47 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB14 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMB15
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 Kohm 
* R2   = 4.7 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB15 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB16 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 Kohm 
* R3   = 47 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 16/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB16 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5  
.ENDS
**
**********************************************************
*
* PEMB17 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 Kohm 
* R2   = 22 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB17 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB18 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB18 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB19 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB19 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMB1
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60  @ 5V/5mA
* R1   = 22 Kohm 
* R2   = 22 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB1 PNP
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB20 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R2   = 2.2 Kohm
* R3   = 2.2 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB20 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB24 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 100 Kohm 
* R2   = 100 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 45/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB24 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB2
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 47 Kohm 
* R2   = 47 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMB2 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB30
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB30 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB3
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB3 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMB4 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 10 Kohm 
* R2   = 10 Kohm   
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB4 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB9 
*
* NXP Semiconductors
*
* Resistor equipped PNP/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/5mA
* R1   = 10 Kohm 
* R2   = 47 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMB9 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMB10 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 2.2 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD10_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD10_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD12 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 47 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMD12_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD12_PNP PNP
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD13 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 4.7 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*# 
.MODEL QPEMD13_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD13_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMD14 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD14_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD14_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMD15
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 4.7 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD15_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD15_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD16
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 16/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD16_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD16_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5  
.ENDS
**
**********************************************************
*
* PEMD17 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 47 kohm
* R2   = 22 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD17_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD17_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD18
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 10 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD18_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD18_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD19
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 kohm
* R2   = 22 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD19_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD19_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMD20 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 kohm
* R2   = 2.2 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD20_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD20_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD24 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 100 kohm
* R2   = 100 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 45/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD24_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD24_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD2
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 kohm
* R2   = 22 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD2_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD2_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD30
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 kohm
* R2   = 2.2 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD30_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD30_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD3
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/5mA
* R1   = 10 kohm
* R2   = 10 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMD3_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD3_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD48
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 47 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMD48_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD48_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMD4
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 10 kohm
* R2   = 10 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMD4_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD4_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMD6
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.7 kohm
* R2   = 4.7 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMD6_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD6_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMD9
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/5mA
* R1   = 10 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMD9_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPEMD9_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PEMH10
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 2.2 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH10 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH11
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/5mA
* R1   = 10 kohm
* R2   = 10 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH11 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH13
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH13 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH14
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 47 kohm
* R2   = open
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH14 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH15
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 4.7 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH15 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH16
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 22 kohm
* R2   = 47 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 16/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH16 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH17
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 kohm
* R2   = 22 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH17 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH18
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 kohm
* R2   = 10 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH18 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH19
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1   = 22 kohm
* R2   = open
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH19 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH1
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 kohm
* R2   = 22 kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH1 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH20
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH20 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH24
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm 
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 45/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH24 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH2
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 47 KOhm
* R2   = 47 KOhm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH2 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH30
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH30 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH4
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH4 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH7
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 typ. 330 @ 5V/1mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 20/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPEMH7 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMH9
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1   = 100 Kohm
* R2   = 47  Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMH9 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PEMT1
*
* NXP Semiconductors
*
* general purpose double PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMT1 PNP
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79 
.ENDS
**
**********************************************************
*
* PEMX1
*
* NXP Semiconductors
*
* general purpose double NPN transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMX1 NPN
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
**
**********************************************************
*
* PEMZ1
*
* NXP Semiconductors
*
* general purpose NPN/PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMZ1_NPN NPN 
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
*
.MODEL QPEMZ1_PNP PNP 
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79
.ENDS
**
**********************************************************
*
* PEMZ7
*
* NXP Semiconductors
*
* general purpose NPN/PNP transistor
* IC   = 500 mA
* VCEO = 12 V 
* hFE  = min. 200  @ 2V/10mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPEMZ7_NPN NPN
+ IS = 5.081E-14
+ NF = 0.9851
+ ISE = 3.304E-14
+ NE = 2.27
+ BF = 435
+ IKF = 0.75
+ VAF = 16.5
+ NR = 0.985
+ ISC = 9.959E-15
+ NC = 1.506
+ BR = 243
+ IKR = 0.188
+ VAR = 15.9
+ RB = 27
+ IRB = 0.00074
+ RBM = 0.05
+ RE = 0.11
+ RC = 0.19
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.863E-11
+ VJE = 0.8
+ MJE = 0.393
+ TF = 4.5E-10
+ XTF = 4
+ VTF = 0.9
+ ITF = 0.8
+ PTF = 0
+ CJC = 1.287E-11
+ VJC = 0.7021
+ MJC = 0.41
+ XCJC = 1
+ TR = 1.8E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
*
.MODEL QPEMZ7_PNP PNP
+ IS = 6.93E-14
+ NF = 1.002
+ ISE = 1.892E-14
+ NE = 1.457
+ BF = 250
+ IKF = 0.49
+ VAF = 13.72
+ NR = 1.002
+ ISC = 1.738E-14
+ NC = 1.164
+ BR = 90
+ IKR = 0.14
+ VAR = 13.24
+ RB = 27
+ IRB = 0.0005
+ RBM = 0.5
+ RE = 0.12
+ RC = 0.13
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.814E-11
+ VJE = 0.55
+ MJE = 0.3388
+ TF = 5.2E-10
+ XTF = 25
+ VTF = 0.5
+ ITF = 1.5
+ PTF = 0
+ CJC = 1.763E-11
+ VJC = 0.3595
+ MJC = 0.3692
+ XCJC = 1
+ TR = 1E-09
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.ENDS
**
**********************************************************
*
* PH2369
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 200 mA
* VCEO = 15 V 
* hFE  = 40 - 120  @ 1V/10mA
*
*
*
* Package: SOT 54
* 
* Package Pin 1: Emitter   
* Package Pin 2: Base      
* Package Pin 3: Collector 
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPH2369 NPN 
+ IS = 1.751E-15 
+ NF = 0.998 
+ ISE = 3.503E-16 
+ NE = 1.148 
+ BF = 121.3 
+ IKF = 0.17 
+ VAF = 57 
+ NR = 0.988 
+ ISC = 7.44E-11 
+ NC = 1.55 
+ BR = 0.3812 
+ IKR = 0.05 
+ VAR = 17 
+ RB = 35 
+ IRB =  
+ RBM = 0.05 
+ RE = 0.729 
+ RC = 1.01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.807E-12 
+ VJE = 0.55 
+ MJE = 0.3135 
+ TF = 2.073E-10 
+ XTF = 1 
+ VTF = 11 
+ ITF = 0.17 
+ PTF = 0 
+ CJC = 1.889E-12 
+ VJC = 0.8844 
+ MJC = 0.3014 
+ XCJC = 1 
+ TR = 5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8517 
.ENDS
**
**********************************************************
*
* PIMD2
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60   @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 23/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPIMD2_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPIMD2_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PIMH9
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100   @ 5V/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPIMH9 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PIMT1
*
* NXP Semiconductors
*
* General purpose double PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120   @ 6V/1mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2  
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPIMT1 PNP
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79 
.ENDS
**
**********************************************************
*
* PIMZ2
*
* NXP Semiconductors
*
* General purpose double NPN/PNP transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 560   @ 6V/1mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;3: Collector TR1;TR2  
* Package Pin 2;4: Emitter   TR1;TR2
* Package Pin 5;6: Base      TR2;TR1
*
*
* Extraction date (week/year): 30/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PIMZ2_PNP 1 2 3
*
Q1 1 2 3 PIMZ2_PNP
D 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation of the PNP
* transistor.
*
.MODEL PIMZ2_PNP PNP 
+ IS = 9.134E-15
+ NF = 0.9775
+ ISE = 5.035E-16
+ NE = 1.4
+ BF = 267.4
+ IKF = 0.095
+ VAF = 38
+ NR = 0.9848
+ ISC = 1.713E-15
+ NC = 1.034
+ BR = 17
+ IKR = 0.0075
+ VAR = 11.5
+ RB = 75
+ IRB = 0.0002144
+ RBM = 0.108
+ RE = 0.4
+ RC = 0.95
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.126E-11
+ VJE = 0.7922
+ MJE = 0.3954
+ TF = 4.5E-10
+ XTF = 1.5
+ VTF = 20
+ ITF = 0.07
+ PTF = 0
+ CJC = 1.031E-11
+ VJC = 1
+ MJC = 0.6227
+ XCJC = 1
+ TR = 5.1E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4.065E-18
+ N = 0.9309
+ BV = 1000
+ IBV = 0.001
+ RS = 0.02115
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 2
.ENDS
*
.SUBCKT PIMZ2_NPN 1 2 3
*
Q2 1 2 3 PIMZ2_NPN
D 2 1 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation of the PNP
* transistor.
*
.MODEL PIMZ2_NPN NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* PMBS3904
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2002
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBS3904 1 2 3 
*
Q1 1 2 3 PMBS3904
D1 2 1 DIODE
*
.MODEL PMBS3904 NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.5 
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMBS3906
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 37/2007
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBS3906 PNP 
+ IS= 9.273E-15
+ NF= 1.012
+ ISE= 1.01E-13
+ NE= 1.6
+ BF= 153.6  
+ IKF= 0.09
+ NR= 0.9988
+ ISC= 1.117E-12
+ NC= 1.43  
+ BR= 6.25
+ IKR= 0.09
+ VAR= 10.97
+ RB= 1
+ IRB= 1E-06
+ RBM= 1  
+ RE= 0.1244
+ RC= 1.375
+ XTB= 0
+ EG= 1.11
+ XTI= 3
+ CJE= 7.897E-12  
+ VJE= 0.69
+ MJE= 0.3628
+ TF= 5.9E-10
+ XTF= 2.5
+ VTF= 3.8  
+ ITF= 0.07
+ PTF= 0
+ CJC= 6.755E-12
+ VJC= 0.37
+ MJC= 0.2096 
+ XCJC= 0.864
+ TR= 4.7E-8
+ CJS= 0
+ VJS= 0.75
+ MJS= 0.333
+ FC= 0.5  
.ENDS
**
**********************************************************
*
* PMBT2222A 
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 40 @ 10V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT2222A NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PMBT2222 
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 30 V 
* hFE  = 30 @ 10V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT2222 NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PMBS3906
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 40 - 120  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPMBT2369 NPN
+ IS = 1.751E-15 
+ NF = 0.998 
+ ISE = 3.503E-16 
+ NE = 1.148 
+ BF = 121.3 
+ IKF = 0.17 
+ VAF = 57 
+ NR = 0.988 
+ ISC = 7.44E-11 
+ NC = 1.55 
+ BR = 0.3812 
+ IKR = 0.05 
+ VAR = 17 
+ RB = 35 
+ IRB = 0.0002423 
+ RBM = 0.05 
+ RE = 0.729 
+ RC = 1.01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.807E-12 
+ VJE = 0.55 
+ MJE = 0.3135 
+ TF = 2.073E-10 
+ XTF = 1 
+ VTF = 11 
+ ITF = 0.17 
+ PTF = 0 
+ CJC = 1.889E-12 
+ VJC = 0.8844 
+ MJC = 0.3014 
+ XCJC = 1 
+ TR = 5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.8517
.ENDS
**
**********************************************************
*
* PMBT2907 
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 60 V 
* hFE  = 100 @ 10V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT2907A PNP
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMBT2907 
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 75 @ 10V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT2907 PNP
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMBTA42DS
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 08/2003
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMBT3904M 1 2 3
*
Q1 1 2 3 PMBT3904M
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PMBT3904M NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.iconductors
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMBT3904 
*
* NXP Semiconductors
*
* NPN switching transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT3904 NPN
+ IS = 1.832E-015
+ NF = 0.97
+ ISE = 1.858E-016
+ NE = 1.243
+ BF = 165
+ IKF = 0.065
+ VAF = 14
+ NR = 1.06
+ ISC = 6.3E-014
+ NC = 1.5
+ BR = 0.1
+ IKR = 1
+ VAR = 100
+ RB = 25
+ IRB = 0.00012
+ RBM = 9.7
+ RE = 0.18
+ RC = 0.4168
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 7.497E-012
+ VJE = 0.6169
+ MJE = 0.285
+ TF = 2.3E-010
+ XTF = 10
+ VTF = 2
+ ITF = 0.15
+ PTF = 0
+ CJC = 2.646E-012
+ VJC = 0.5023
+ MJC = 0.3137
+ XCJC = 1
+ TR = 2E-006
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
.ENDS
**
**********************************************************
*
* PMBT3904VS 
*
* NXP Semiconductors
*
* Switching NPN/NPN transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2      
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 08/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT3904VS 1 2 3
*
* The diodes D1 and D2 are dedicated to
* improve modeling in reverse mode operation
* and do not reflect physical devices.
*
Q1 1 2 3 PMBT3904VS
D1 2 1 DIODE
*
.MODEL PMBT3904VS NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.5 
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMBT3904YS
*
* NXP Semiconductors
*
* NPN switching transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT3904YS 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 2.83E-015
+ NF = 0.9876
+ ISE = 5.715E-016
+ NE = 1.301
+ BF = 190
+ IKF = 0.08511
+ VAF = 20.23
+ NR = 0.9924
+ ISC = 1.531E-011
+ NC = 1.439
+ BR = 20.5
+ IKR = 1000
+ VAR = 15.83
+ RB = 24.44
+ IRB = 0.000109
+ RBM = 2.861
+ RE = 0.7001
+ RC = 0.3319
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 6.574E-012
+ VJE = 0.3993
+ MJE = 0.3026
+ TF = 2.4E-010
+ XTF = 10
+ VTF = 2
+ ITF = 0.15
+ PTF = 0
+ CJC = 2.727E-012
+ VJC = 0.3868
+ MJC = 0.2389
+ XCJC = 1
+ TR = 2.2E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 3.799E-015
+ N = 0.9131
+ BV = 1000
+ IBV = 0.001
+ RS = 3941
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PMBT3906M 
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 883
* 
* Package Pin 1: Base     
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 39/2007
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT3906M PNP 
+     IS=9.273E-15
+     NF=1.012
+     ISE=1.01E-13
+     NE=1.6
+     BF=153.6  
+     IKF=0.09
+     VAF=30.8
+     NR=0.9988
+     ISC=1.117E-12
+     NC=1.43  
+     BR=6.25
+     IKR=0.09
+     VAR=10.97
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.1244
+     RC=1.375
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=7.897E-12  
+     VJE=0.69
+     MJE=0.3628
+     TF=5.9E-10
+     XTF=2.5
+     VTF=3.8  
+     ITF=0.07
+     PTF=0
+     CJC=6.755E-12
+     VJC=0.37
+     MJC=0.2096 
+     XCJC=0.864
+     TR=4.7E-8
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5
.ENDS
**
**********************************************************
*
* PMBT3906 
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 39/2007 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT3906 PNP
+ IS=9.273E-15
+ NF=1.012
+ ISE=1.01E-13
+ NE=1.6
+ BF=153.6  
+ IKF=0.09
+ NR=0.9988
+ ISC=1.117E-12
+ NC=1.43  
+ BR=6.25
+ IKR=0.09
+ VAR=10.97
+ RB=1
+ IRB=1E-06
+ RBM=1  
+ RE=0.1244
+ RC=1.375
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=7.897E-12  
+ VJE=0.69
+ MJE=0.3628
+ TF=5.9E-10
+ XTF=2.5
+ VTF=3.8  
+ ITF=0.07
+ PTF=0
+ CJC=6.755E-12
+ VJC=0.37
+ MJC=0.2096 
+ XCJC=0.864
+ TR=4.7E-8
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.5 
.ENDS
**
**********************************************************
*
* PMBT3906VS 
*
* NXP Semiconductors
*
* Switching PNP/PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 666
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 39/2007
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT3906VS PNP 
+     IS=9.273E-15
+     NF=1.012
+     ISE=1.01E-13
+     NE=1.6
+     BF=153.6  
+     IKF=0.09
+     VAF=30.8
+     NR=0.9988
+     ISC=1.117E-12
+     NC=1.43  
+     BR=6.25
+     IKR=0.09
+     VAR=10.97
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.1244
+     RC=1.375
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=7.897E-12  
+     VJE=0.69
+     MJE=0.3628
+     TF=5.9E-10
+     XTF=2.5
+     VTF=3.8  
+     ITF=0.07
+     PTF=0
+     CJC=6.755E-12
+     VJC=0.37
+     MJC=0.2096 
+     XCJC=0.864
+     TR=4.7E-8
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5
.ENDS
**
**********************************************************
*
* PMBT3906YS 
*
* NXP Semiconductors
*
* General-purpose double PNP/PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 39/2007
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT3906YS PNP 
+     IS=9.273E-15
+     NF=1.012
+     ISE=1.01E-13
+     NE=1.6
+     BF=153.6  
+     IKF=0.09
+     VAF=30.8
+     NR=0.9988
+     ISC=1.117E-12
+     NC=1.43  
+     BR=6.25
+     IKR=0.09
+     VAR=10.97
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.1244
+     RC=1.375
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=7.897E-12  
+     VJE=0.69
+     MJE=0.3628
+     TF=5.9E-10
+     XTF=2.5
+     VTF=3.8  
+     ITF=0.07
+     PTF=0
+     CJC=6.755E-12
+     VJC=0.37
+     MJC=0.2096 
+     XCJC=0.864
+     TR=4.7E-8
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.5
.ENDS
**
**********************************************************
*
* PMBT3906YS 
*
* NXP Semiconductors
*
* General-purpose double NPN/PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 08/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT3946VPN_NPN 1 2 3
*
Q1 1 2 3 PMBT3946VPN_NPN
D 2 1 DIODE
*
* Diode D1  is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PMBT3946VPN_NPN NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.5 
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*
.SUBCKT PMBT3946VPN_PNP 1 2 3
*
Q2 1 2 3 PMBT3946VPN_PNP
*
* Diode D1  is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PMBT3946VPN_PNP PNP 
+ IS=9.273E-15
+ NF=1.012
+ ISE=1.01E-13
+ NE=1.6
+ BF=153.6  
+ IKF=0.09
+ VAF=30.8
+ NR=0.9988
+ ISC=1.117E-12
+ NC=1.43  
+ BR=6.25
+ IKR=0.09
+ VAR=10.97
+ RB=1
+ IRB=1E-06
+ RBM=1  
+ RE=0.1244
+ RC=1.375
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=7.897E-12  
+ VJE=0.69
+ MJE=0.3628
+ TF=5.9E-10
+ XTF=2.5
+ VTF=3.8  
+ ITF=0.07
+ PTF=0
+ CJC=6.755E-12
+ VJC=0.37
+ MJC=0.2096 
+ XCJC=0.864
+ TR=4.7E-8
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.5
.ENDS
**
**********************************************************
*
* PMBT3946YPN 
*
* NXP Semiconductors
*
* General-purpose double NPN/PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 08/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT3946YPN_NPN 1 2 3 
*
Q1 1 2 3 PMBT3946YPN_NPN
D 2 1 DIODE
*
* Diode D1  is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
.MODEL PMBT3946YPN_NPN NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.5 
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
*
.SUBCKT PMBT3946YPN_PNP 1 2 3 
*
Q1 1 2 3 PMBT3946YPN_PNP
*
.MODEL PMBT3946YPN_PNP PNP 
+ IS=9.273E-15
+ NF=1.012
+ ISE=1.01E-13
+ NE=1.6
+ BF=153.6  
+ IKF=0.09
+ VAF=30.8
+ NR=0.9988
+ ISC=1.117E-12
+ NC=1.43  
+ BR=6.25
+ IKR=0.09
+ VAR=10.97
+ RB=1
+ IRB=1E-06
+ RBM=1  
+ RE=0.1244
+ RC=1.375
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=7.897E-12  
+ VJE=0.69
+ MJE=0.3628
+ TF=5.9E-10
+ XTF=2.5
+ VTF=3.8  
+ ITF=0.07
+ PTF=0
+ CJC=6.755E-12
+ VJC=0.37
+ MJC=0.2096 
+ XCJC=0.864
+ TR=4.7E-8
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.5
.ENDS
**
**********************************************************
*
* PMBT4401 
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 30/2003 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMBT4401 NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3
.ENDS
**
**********************************************************
*
* PMBT4403
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300 @ 2V/150mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT4403 PNP
+    IS = 3.202E-14 
+    NF = 0.9778 
+    ISE = 3.543E-15 
+    NE = 1.45 
+    BF = 226.9 
+    IKF = 0.55 
+    VAF = 50.66 
+    NR = 0.979 
+    ISC = 8.53E-15 
+    NC = 1.09 
+    BR = 22.84 
+    IKR = 0.09 
+    VAR = 14 
+    RB = 28 
+    IRB = 0.00021 
+    RBM = 2.5 
+    RE = 0.11 
+    RC = 0.2467 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.539E-11 
+    VJE = 0.8759 
+    MJE = 0.4257 
+    TF = 5.109E-10 
+    XTF = 5 
+    VTF = 7 
+    ITF = 0.7 
+    PTF = 12 
+    CJC = 2.452E-11 
+    VJC = 0.9 
+    MJC = 0.546 
+    XCJC = 0.601 
+    TR = 1.6E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMBT5550
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 300 mA
* VCEO = 140 V 
* hFE  = 60 - 250 @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT5550 NPN 
+    IS = 1.663E-14 
+    NF = 0.9956 
+    ISE = 2.072E-15 
+    NE = 1.311 
+    BF = 144.7 
+    IKF = 0.545 
+    VAF = 440.1 
+    NR = 0.985 
+    ISC = 4E-12 
+    NC = 1.4 
+    BR = 2.994 
+    IKR = 0.2 
+    VAR = 30 
+    RB = 20 
+    IRB = 0.0002 
+    RBM = 6 
+    RE = 0.3345 
+    RC = 0.76 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.716E-11 
+    VJE = 0.6743 
+    MJE = 0.3438 
+    TF = 1.026E-09 
+    XTF = 15 
+    VTF = 5 
+    ITF = 0.3 
+    PTF = 0 
+    CJC = 6.422E-12 
+    VJC = 0.4281 
+    MJC = 0.4077 
+    XCJC = 0.595 
+    TR = 3.28E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.8953
.ENDS
**
**********************************************************
*
* PMBT5551
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 300 mA
* VCEO = 160 V 
* hFE  = 80 - 250 @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBT5551 NPN
+    IS = 1.663E-14 
+    NF = 0.9956 
+    ISE = 2.072E-15 
+    NE = 1.311 
+    BF = 144.7 
+    IKF = 0.545 
+    VAF = 440.1 
+    NR = 0.985 
+    ISC = 4E-12 
+    NC = 1.4 
+    BR = 2.994 
+    IKR = 0.2 
+    VAR = 30 
+    RB = 20 
+    IRB = 0.0002 
+    RBM = 6 
+    RE = 0.3345 
+    RC = 0.76 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.716E-11 
+    VJE = 0.6743 
+    MJE = 0.3438 
+    TF = 1.026E-09 
+    XTF = 15 
+    VTF = 5 
+    ITF = 0.3 
+    PTF = 0 
+    CJC = 6.422E-12 
+    VJC = 0.4281 
+    MJC = 0.4077 
+    XCJC = 0.595 
+    TR = 3.28E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.8953
.ENDS
**
**********************************************************
*
* PMBT6428 
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 250 - 650  @ 5V/0,1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT6428 1 2 3
*
Q1 1 2 3 PMBT6428 
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PMBT6428 NPN 
+ IS = 3.591E-14 
+ NF = 0.997 
+ ISE = 1.17E-14 
+ NE = 1.95 
+ BF = 600 
+ IKF = 0.08 
+ VAF = 77 
+ NR = 0.9927 
+ ISC = 2.885E-18 
+ NC = 0.8 
+ BR = 20 
+ IKR = 4E+05 
+ VAR = 27 
+ RB = 478 
+ IRB = 2.5E-05 
+ RBM = 1 
+ RE = 0.35 
+ RC = 0.8 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.116E-11 
+ VJE = 0.6 
+ MJE = 0.3536 
+ TF = 3.8E-10 
+ XTF = 6 
+ VTF = 6.4 
+ ITF = 0.16 
+ PTF = 0 
+ CJC = 3.552E-12 
+ VJC = 0.3992 
+ MJC = 0.3822 
+ XCJC = 1 
+ TR = 2.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-16 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.02 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ XTI = 2 
+ EG = 1.11 
.ENDS
**
**********************************************************
*
* PMBT6429
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 500 - 1250  @ 5V/0,1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBT6429 1 2 3
*
Q1 1 2 3 PMBT6429 
D1 2 1 DIODE 
*
.MODEL PMBT6429 NPN 
+ IS = 3.591E-14 
+ NF = 0.997 
+ ISE = 1.17E-14 
+ NE = 1.95 
+ BF = 600 
+ IKF = 0.08 
+ VAF = 77 
+ NR = 0.9927 
+ ISC = 2.885E-18 
+ NC = 0.8 
+ BR = 20 
+ IKR = 4E+05 
+ VAR = 27 
+ RB = 478 
+ IRB = 2.5E-05 
+ RBM = 1 
+ RE = 0.35 
+ RC = 0.8 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.116E-11 
+ VJE = 0.6 
+ MJE = 0.3536 
+ TF = 3.8E-10 
+ XTF = 6 
+ VTF = 6.4 
+ ITF = 0.16 
+ PTF = 0 
+ CJC = 3.552E-12 
+ VJC = 0.3992 
+ MJC = 0.3822 
+ XCJC = 1 
+ TR = 2.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D
+ IS = 1E-16 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.02 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ XTI = 2 
+ EG = 1.11 
.ENDS
**
**********************************************************
*
* PMBTA06 
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 500 mA
* VCEO = 80 V 
* hFE  = min. 100  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMBTA06 1 2 3 
* 
Q1 1 2 3 PMBTA06 
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL PMBTA06 NPN 
+ IS = 5.083E-14 
+ NF = 0.9903 
+ ISE = 3.284E-16 
+ NE = 1.2 
+ BF = 188 
+ IKF = 1.5 
+ VAF = 170 
+ NR = 0.9817 
+ ISC = 3.78E-15 
+ NC = 1.1 
+ BR = 16.51 
+ IKR = 0.12 
+ VAR = 33 
+ RB = 25 
+ IRB = 1E-05 
+ RBM = 0.2 
+ RE = 0.203 
+ RC = 0.25 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.661E-11 
+ VJE = 0.6716 
+ MJE = 0.3424 
+ TF = 6.5E-10 
+ XTF = 8 
+ VTF = 2 
+ ITF = 0.7 
+ PTF = 0 
+ CJC = 1.576E-11 
+ VJC = 0.5623 
+ MJC = 0.4561 
+ XCJC = 1 
+ TR = 2.5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.68 
.MODEL DIODE D 
+ IS = 7.58E-15 
+ N = 0.9585 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 400 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMBTA13
*
* NXP Semiconductors
*
* Darlington NPN transistors
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 5000  @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMBTA13 1 2 3 

Q1 1 2 33 PMBTA13 1 
Q2 1 33 3 PMBTA13 5.1 
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 PMBTA13 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 PMBTA13 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
.MODEL PMBTA13 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* PMBTA14
*
* NXP Semiconductors
*
* Darlington NPN transistors
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 10000  @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMBTA14 1 2 3 
*
Q1 1 2 33 PMBTA14 1 
Q2 1 33 3 PMBTA14 5.1 
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 PMBTA14 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 PMBTA14 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
.MODEL PMBTA14 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* PMBTA42DS 
*
* NXP Semiconductors
*
* High-voltage double NPN/NPN transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = min. 25  @ 10V/1mA
*
*
*
* Package: SOT 457
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 37/2005
* Simulator: Spice 3
*
**********************************************************
*# 
.MODEL QPMBTA42DS NPN
+    IS = 1.766E-14 
+    NF = 0.9902 
+    ISE = 1.982E-15 
+    NE = 1.25 
+    BF = 108.1 
+    IKF = 0.21 
+    VAF = 394 
+    NR = 0.99 
+    ISC = 9.5E-10 
+    NC = 1.95 
+    BR = 4.928 
+    IKR = 0.045 
+    VAR = 57 
+    RB = 100 
+    IRB = 2E-05 
+    RBM = 0.01 
+    RE = 0.365 
+    RC = 1.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.181E-11 
+    VJE = 0.6301 
+    MJE = 0.329 
+    TF = 1.303E-09 
+    XTF = 35 
+    VTF = 5 
+    ITF = 0.11 
+    PTF = 0 
+    CJC = 4.632E-12 
+    VJC = 0.2621 
+    MJC = 0.4164 
+    XCJC = 0.4132 
+    TR = 1.9E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.842
.ENDS
**
**********************************************************
*
* PMBTA42 
*
* NXP Semiconductors
*
* High-voltage NPN transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 25  @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPMBTA42 NPN 
+    IS = 1.766E-14 
+    NF = 0.9902 
+    ISE = 1.982E-15 
+    NE = 1.25 
+    BF = 108.1 
+    IKF = 0.21 
+    VAF = 394 
+    NR = 0.99 
+    ISC = 9.5E-10 
+    NC = 1.95 
+    BR = 4.928 
+    IKR = 0.045 
+    VAR = 57 
+    RB = 100 
+    IRB = 2E-05 
+    RBM = 0.01 
+    RE = 0.365 
+    RC = 1.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 4.181E-11 
+    VJE = 0.6301 
+    MJE = 0.329 
+    TF = 1.303E-09 
+    XTF = 35 
+    VTF = 5 
+    ITF = 0.11 
+    PTF = 0 
+    CJC = 4.632E-12 
+    VJC = 0.2621 
+    MJC = 0.4164 
+    XCJC = 0.4132 
+    TR = 1.9E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.842 
.ENDS
**
**********************************************************
*
* PMBTA44 
*
* NXP Semiconductors
*
* High-voltage low VCEsat (BISS) NPN transistor
* IC   = 300 mA
* VCEO = 400 V 
* hFE  = 50 - 200  @ 10V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBTA44 1 2 3
*
Q1 1 2 3 PMBTA44
D1 2 1 DIODE
*
.MODEL PMBTA44 NPN 
+ IS = 2.739E-014 
+ NF = 0.9497 
+ ISE = 3.707E-015 
+ NE = 1.231 
+ BF = 109 
+ IKF = 0.02741 
+ VAF = 35.36 
+ NR = 0.956 
+ ISC = 6.2E-013 
+ NC = 1.349 
+ BR = 10 
+ IKR = 2 
+ VAR = 240 
+ RB = 114.1 
+ IRB = 0.0001114 
+ RBM = 2.075 
+ RE = 0.08182 
+ RC = 0.1107 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.807E-010 
+ VJE = 0.6907 
+ MJE = 0.3304 
+ TF = 2.5E-009 
+ XTF = 600 
+ VTF = 10 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 1.433E-011 
+ VJC = 0.1624 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 2E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.99 
.MODEL DIODE D 
+ IS = 2.872E-013 
+ N = 0.9823 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 50.25 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
***
**********************************************************
*
* PMBTA45
*
* NXP Semiconductors
*
* High-voltage low VCEsat (BISS) NPN transistor
* IC   = 0,15 A
* VCEO = 500 V 
* hFE  = min. 50 typ. 200  @ 10V/30mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 30/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMBTA45 1 2 3
*
Q1 1 2 3 PMBTA45
D1 2 1 DIODE
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
* 
.MODEL PMBTA45 NPN 
+ IS = 1.068E-013 
+ NF = 0.9934 
+ ISE = 1.277E-013 
+ NE = 1.559 
+ BF = 102 
+ IKF = 0.032 
+ VAF = 15 
+ NR = 0.9701 
+ ISC = 1.393E-012 
+ NC = 1.268 
+ BR = 10.92 
+ IKR = 1.205 
+ VAR = 78 
+ RB = 15 
+ IRB = 0.000158 
+ RBM = 1.75 
+ RE = 0.1 
+ RC = 0.1021 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.315E-010 
+ VJE = 0.6806 
+ MJE = 0.327 
+ TF = 2.5E-009 
+ XTF = 50 
+ VTF = 0.5 
+ ITF = 0.6 
+ PTF = 0 
+ CJC = 1.593E-011 
+ VJC = 0.162 
+ MJC = 0.3 
+ XCJC = 1 
+ TR = 5E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.79 
.MODEL DIODE D 
+ IS = 3.09E-013 
+ N = 0.935 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 398.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMBTA56
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 80 V 
* hFE  = 100 @ 1V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMBTA56 PNP 
+   IS = 6.777E-014 
+   NF = 0.9854 
+   ISE = 5.689E-015 
+   NE = 1.277 
+   BF = 206 
+   IKF = 0.175 
+   VAF = 38 
+   NR = 0.9884 
+   ISC = 1.394E-013 
+   NC = 1.145 
+   BR = 11 
+   IKR = 0.22 
+   VAR = 21 
+   RB = 16 
+   IRB = 0.0004 
+   RBM = 0.763 
+   RE = 0.085 
+   RC = 0.27 
+   XTB = 0 
+   EG = 1.11 
+   XTI = 3 
+   CJE = 6.014E-011 
+   VJE = 0.7796 
+   MJE = 0.4005 
+   TF = 9E-010 
+   XTF = 10 
+   VTF = 0.5 
+   ITF = 0.5 
+   PTF = 0 
+   CJC = 2.439E-011 
+   VJC = 0.6416 
+   MJC = 0.4655 
+   XCJC = 1 
+   TR = 9E-008 
+   CJS = 0 
+   VJS = 0.75 
+   MJS = 0.333 
+   FC = 0.78 
.ENDS
**
**********************************************************
*
* PMBTA64 
*
* NXP Semiconductors
*
* Darlington PNP transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 10000  @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMBTA64 1 2 3 
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 11 222 33 PMBTA64 AREA = 4.68 
* PSPICE:
* Q2 11 222 33 PMBTA64 4.68 
*
Q1 1 2 33 PMBTA64 1 
Q2 1 33 3 PMBTA64 4.68 
*
.MODEL PMBTA64 PNP 
+ IS = 1.593E-14 
+ NF = 0.9855 
+ ISE = 7E-15 
+ NE = 1.5 
+ BF = 280 
+ IKF = 0.09 
+ VAF = 31 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 4 
+ RB = 600 
+ IRB = 1E-06 
+ RBM = 10 
+ RE = 0.1 
+ RC = 1 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.9 
+ MJE = 0.4141 
+ TF = 9.9E-10 
+ XTF = 15 
+ VTF = 5 
+ ITF = 0.4 
+ PTF = 0 
+ CJC = 7.95E-12 
+ VJC = 0.9 
+ MJC = 0.5622 
+ XCJC = 0.9 
+ TR = 1E-15 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.98 
.ENDS
**
**********************************************************
*
* PMBTA92 
*
* NXP Semiconductors
*
* High-voltage PNP transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 25  @ 10V/1mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPMBTA92 PNP 
+    IS = 1.737E-14 
+    NF = 0.9934 
+    ISE = 8.208E-15 
+    NE = 1.559 
+    BF = 141.4 
+    IKF = 0.8 
+    VAF = 350 
+    NR = 0.9755 
+    ISC = 2.097E-10 
+    NC = 1.65 
+    BR = 2.5 
+    IKR = 0.06 
+    VAR = 17 
+    RB = 70 
+    IRB = 5E-05 
+    RBM = 0.3 
+    RE = 0.418 
+    RC = 2.5 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.916E-11 
+    VJE = 0.7361 
+    MJE = 0.3612 
+    TF = 1.356E-09 
+    XTF = 19 
+    VTF = 9 
+    ITF = 0.2 
+    PTF = 0 
+    CJC = 1.071E-11 
+    VJC = 0.726 
+    MJC = 0.5717 
+    XCJC = 0.413 
+    TR = 3.3E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMMT491A
*
* NXP Semiconductors
*
* General purpose BISS NPN transistor
* IC   = 1 A
* VCEO = 40 V 
* hFE  = 300 - 900  @ 5V/500mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMMT491A 1 2 3
*
Q1 1 2 3 PMMT491A 
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PMMT491A NPN 
+ IS = 1.933E-13 
+ NF = 0.9751 
+ ISE = 5.906E-16 
+ NE = 1.2 
+ BF = 441.7 
+ IKF = 5.05 
+ VAF = 85 
+ NR = 0.9739 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 81 
+ IKR = 0.5 
+ VAR = 12 
+ RB = 80 
+ IRB = 3E-05 
+ RBM = 0.6 
+ RE = 0.129 
+ RC = 0.14 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.021E-10 
+ VJE = 0.5499 
+ MJE = 0.3105 
+ TF = 4E-10 
+ XTF = 9 
+ VTF = 3 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 2.134E-11 
+ VJC = 0.6106 
+ MJC = 0.4466 
+ XCJC = 1 
+ TR = 2.1E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9485 
.MODEL DIODE D 
+ IS = 5E-15 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMMT591A
*
* NXP Semiconductors
*
* General purpose BISS PNP transistor
* IC   = 1 A
* VCEO = 40 V 
* hFE  = 300 - 800  @ 5V/100mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPMMT591A PNP 
+ IS = 2.837E-13 
+ NF = 0.9839 
+ ISE = 1.071E-14 
+ NE = 1.221 
+ BF = 577.3 
+ IKF = 0.56 
+ VAF = 28 
+ NR = 0.982 
+ ISC = 6.577E-14 
+ NC = 1.123 
+ BR = 121 
+ IKR = 0.2 
+ VAR = 10 
+ RB = 21 
+ IRB = 0.00019 
+ RBM = 0.2 
+ RE = 0.11 
+ RC = 0.12 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 8.276E-11 
+ VJE = 0.819 
+ MJE = 0.4077 
+ TF = 6.5E-10 
+ XTF = 5 
+ VTF = 2 
+ ITF = 2 
+ PTF = 0 
+ CJC = 3.252E-11 
+ VJC = 0.803 
+ MJC = 0.4962 
+ XCJC = 1 
+ TR = 1.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.ENDS
**
**********************************************************
*
* PMSS3904
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 42/2009
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMSS3904 1 2 3
*
Q1 1 2 3 PMSS3904 
D1 2 1 DIODE 
*
.MODEL PMSS3904 NPN 
+ IS = 8.546E-015 
+ NF = 0.9844 
+ ISE = 7.735E-014 
+ NE = 2.5 
+ BF = 190 
+ IKF = 0.05037 
+ VAF = 45 
+ NR = 0.9847 
+ ISC = 2.188E-016 
+ NC = 0.95 
+ BR = 5.532 
+ IKR = 5943 
+ VAR = 25 
+ RB = 150 
+ IRB = 5E-005 
+ RBM = 1.4 
+ RE = 0.8 
+ RC = 0.3525 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.395E-011 
+ VJE = 0.6702 
+ MJE = 0.3254 
+ TF = 5.8E-010 
+ XTF = 50 
+ VTF = 0.7 
+ ITF = 0.18 
+ PTF = 0 
+ CJC = 3.411E-012 
+ VJC = 0.5061 
+ MJC = 0.39 
+ XCJC = 1 
+ TR = 1.5E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1.667E-015 
+ N = 0.9999 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1E+004 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMSS3906
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 100 - 300 @ 5V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*  
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMSS3906 PNP
+     IS = 1.17E-14 
+     NF = 0.9972 
+     ISE = 1.762E-14 
+     NE = 1.661 
+     BF = 161.3 
+     IKF = 0.15 
+     VAF = 59.62 
+     NR = 0.9967 
+     ISC = 1.506E-13 
+     NC = 1.32 
+     BR = 6.78 
+     IKR = 0.048 
+     VAR = 15.4 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.689 
+     RC = 0.61 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.325E-11 
+     VJE = 0.8514 
+     MJE = 0.3999 
+     TF = 8.333E-10 
+     XTF = 2.41 
+     VTF = 6.262 
+     ITF = 0.097 
+     PTF = 0 
+     CJC = 6.396E-12 
+     VJC = 0.2182 
+     MJC = 0.333 
+     XCJC = 0.6288 
+     TR = 7E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.8981
.ENDS
**
**********************************************************
*
* PMST2222A
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min.40 @ 10V/500mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST2222A NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PMST2222
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 600 mA
* VCEO = 30 V 
* hFE  = 30 @ 10V/500mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST2222 NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3
.ENDS
**
**********************************************************
*
* PMST2369 
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 200 mA
* VCEO = 15 V 
* hFE  = 40 - 120 @ 1V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST2369 NPN
+     IS = 1.222E-15 
+     NF = 0.9901 
+     ISE = 3.895E-14 
+     NE = 1.632 
+     BF = 82.01 
+     IKF = 0.196 
+     VAF = 35.3 
+     NR = 0.974 
+     ISC = 1.85E-09 
+     NC = 2.01 
+     BR = 0.1731 
+     IKR = 0.1 
+     VAR = 29.6 
+     RB = 0.5 
+     IRB = 1E-06 
+     RBM = 0.5 
+     RE = 0.612 
+     RC = 1.527 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 3.411E-12 
+     VJE = 0.7352 
+     MJE = 0.3437 
+     TF = 2.115E-10 
+     XTF = 127 
+     VTF = 2.3 
+     ITF = 1.534 
+     PTF = 0 
+     CJC = 1.605E-12 
+     VJC = 0.198 
+     MJC = 0.1711 
+     XCJC = 0.4 
+     TR = 60E-9
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.9399
.ENDS
**
**********************************************************
*
* PMST2907A 
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 60 V 
* hFE  = 100 - 300 @ 10V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST2907A PNP 
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMST3904_DG 
*
* NXP Semiconductors
*
* NPN switching transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 23
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMST3904_DG 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 2.83E-015
+ NF = 0.9876
+ ISE = 5.715E-016
+ NE = 1.301
+ BF = 190
+ IKF = 0.08511
+ VAF = 20.23
+ NR = 0.9924
+ ISC = 1.531E-011
+ NC = 1.439
+ BR = 20.5
+ IKR = 1000
+ VAR = 15.83
+ RB = 24.44
+ IRB = 0.000109
+ RBM = 2.861
+ RE = 0.7001
+ RC = 0.3319
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 6.574E-012
+ VJE = 0.3993
+ MJE = 0.3026
+ TF = 2.4E-010
+ XTF = 10
+ VTF = 2
+ ITF = 0.15
+ PTF = 0
+ CJC = 2.727E-012
+ VJC = 0.3868
+ MJC = 0.2389
+ XCJC = 1
+ TR = 2.2E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 3.799E-015
+ N = 0.9131
+ BV = 1000
+ IBV = 0.001
+ RS = 3941
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PMST3904 
*
* NXP Semiconductors
*
* NPN switching transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base      
* Package Pin 2: Emitter        
* Package Pin 3: Collector 
*
*
* Extraction date (week/year): 18/2011 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMST3904 1 2 3
*
Q1 1 2 3 MAIN
D1 2 1 DIODE
*
* The diode is dedicated to improve modeling of
* reverse mode operation and do not reflect
* a physical device.
*
.MODEL MAIN NPN
+ IS = 2.83E-015
+ NF = 0.9876
+ ISE = 5.715E-016
+ NE = 1.301
+ BF = 190
+ IKF = 0.08511
+ VAF = 20.23
+ NR = 0.9924
+ ISC = 1.531E-011
+ NC = 1.439
+ BR = 20.5
+ IKR = 1000
+ VAR = 15.83
+ RB = 24.44
+ IRB = 0.000109
+ RBM = 2.861
+ RE = 0.7001
+ RC = 0.3319
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 6.574E-012
+ VJE = 0.3993
+ MJE = 0.3026
+ TF = 2.4E-010
+ XTF = 10
+ VTF = 2
+ ITF = 0.15
+ PTF = 0
+ CJC = 2.727E-012
+ VJC = 0.3868
+ MJC = 0.2389
+ XCJC = 1
+ TR = 2.2E-007
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 3.799E-015
+ N = 0.9131
+ BV = 1000
+ IBV = 0.001
+ RS = 3941
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 3
.ENDS*
**********************************************************
*
* PMST3906
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 200 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 39/2007
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMST3906 PNP 
+ IS=9.273E-15
+ NF=1.012
+ ISE=1.01E-13
+ NE=1.6
+ BF=153.6  
+ IKF=0.09
+ NR=0.9988
+ ISC=1.117E-12
+ NC=1.43  
+ BR=6.25
+ IKR=0.09
+ VAR=10.97
+ RB=1
+ IRB=1E-06
+ RBM=1  
+ RE=0.1244
+ RC=1.375
+ XTB=0
+ EG=1.11
+ XTI=3
+ CJE=7.897E-12  
+ VJE=0.69
+ MJE=0.3628
+ TF=5.9E-10
+ XTF=2.5
+ VTF=3.8  
+ ITF=0.07
+ PTF=0
+ CJC=6.755E-12
+ VJC=0.37
+ MJC=0.2096 
+ XCJC=0.864
+ TR=4.7E-8
+ CJS=0
+ VJS=0.75
+ MJS=0.333
+ FC=0.5 
.ENDS
**
**********************************************************
*
* PMST4401
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 00/00
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPMST4401 NPN
+ IS=29.13E-15 
+ NF=992.6E-3 
+ ISE=9.652E-15 
+ NE=1.516  
+ BF=256.7  
+ IKF = 489.9E-3 
+ VAF = 80.99  
+ NR = 984.4E-3 
+ ISC = 320.3E-12 
+ NC = 1.608  
+ BR = 6.590  
+ IKR = 192.9E-3 
+ VAR = 101.2  
+ RB = 1.000  
+ IRB = 1.000E-3 
+ RBM = 1.000  
+ RE = 193.4E-3 
+ RC = 224.8E-3 
+ EG = 1.110  
+ XTI = 3.000  
+ CJE = 25.89E-12 
+ VJE = 689.1E-3 
+ MJE = 366.8E-3 
+ TF = 293.9E-12 
+ XTF = 71.78  
+ VTF = 20.00  
+ ITF = 4.797  
+ PTF = 0.000  
+ CJC = 10.11E-12 
+ VJC = 662.2E-3 
+ MJC = 416.0E-3 
+ XCJC = 0.5946
+ TR = 320.0E-9 
+ CJS = 0.000  
+ VJS = 750.0E-3 
+ MJS = 333.0E-3 
+ FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PMST4403 
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300 @ 2V/150mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST4403 PNP
+    IS = 3.202E-14 
+    NF = 0.9778 
+    ISE = 3.543E-15 
+    NE = 1.45 
+    BF = 226.9 
+    IKF = 0.55 
+    VAF = 50.66 
+    NR = 0.979 
+    ISC = 8.53E-15 
+    NC = 1.09 
+    BR = 22.84 
+    IKR = 0.09 
+    VAR = 14 
+    RB = 28 
+    IRB = 0.00021 
+    RBM = 2.5 
+    RE = 0.11 
+    RC = 0.2467 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.539E-11 
+    VJE = 0.8759 
+    MJE = 0.4257 
+    TF = 5.109E-10 
+    XTF = 5 
+    VTF = 7 
+    ITF = 0.7 
+    PTF = 12 
+    CJC = 2.452E-11 
+    VJC = 0.9 
+    MJC = 0.546 
+    XCJC = 0.601 
+    TR = 1.6E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PMST5088 
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 30 V 
* hFE  = 300 - 900 @ 5V/0,1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST5088 NPN 
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.999
.ENDS
**
**********************************************************
*
* PMST5089
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 100 mA
* VCEO = 25 V 
* hFE  = 400 - 1200 @ 5V/0,1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST5089 NPN
+     IS = 2.375E-14 
+     NF = 0.9925 
+     ISE = 5.16E-16 
+     NE = 1.3 
+     BF = 524.9 
+     IKF = 0.09 
+     VAF = 49.77 
+     NR = 0.9931 
+     ISC = 7.064E-12 
+     NC = 1.78 
+     BR = 10.04 
+     IKR = 0.132 
+     VAR = 16 
+     RB = 10 
+     IRB = 5E-06 
+     RBM = 5 
+     RE = 0.653 
+     RC = 0.78 
+     XTB = 0 
+     EG = 1.11 
+     XTI = 3 
+     CJE = 1.132E-11 
+     VJE = 0.7685 
+     MJE = 0.3733 
+     TF = 4.258E-10 
+     XTF = 6.319 
+     VTF = 6.4 
+     ITF = 0.1845 
+     PTF = 0 
+     CJC = 3.379E-12 
+     VJC = 0.5444 
+     MJC = 0.3968 
+     XCJC = 0.6193 
+     TR = 9.5E-08 
+     CJS = 0 
+     VJS = 0.75 
+     MJS = 0.333 
+     FC = 0.999
.ENDS 
**
**********************************************************
*
* PMST5550
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 300 mA
* VCEO = 140 V 
* hFE  = 60 - 250 @ 5V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST5550 NPN
+    IS = 1.663E-14 
+    NF = 0.9956 
+    ISE = 2.072E-15 
+    NE = 1.311 
+    BF = 144.7 
+    IKF = 0.545 
+    VAF = 440.1 
+    NR = 0.985 
+    ISC = 4E-12 
+    NC = 1.4 
+    BR = 2.994 
+    IKR = 0.2 
+    VAR = 30 
+    RB = 20 
+    IRB = 0.0002 
+    RBM = 6 
+    RE = 0.3345 
+    RC = 0.76 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.716E-11 
+    VJE = 0.6743 
+    MJE = 0.3438 
+    TF = 1.026E-09 
+    XTF = 15 
+    VTF = 5 
+    ITF = 0.3 
+    PTF = 0 
+    CJC = 6.422E-12 
+    VJC = 0.4281 
+    MJC = 0.4077 
+    XCJC = 0.595 
+    TR = 3.28E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.8953
.ENDS
**
**********************************************************
*
* PMST5551
*
* NXP Semiconductors
*
* General purpose NPN transistor
* IC   = 300 mA
* VCEO = 160 V 
* hFE  = 80 - 250 @ 5V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMST5551 NPN
+    IS = 1.663E-14 
+    NF = 0.9956 
+    ISE = 2.072E-15 
+    NE = 1.311 
+    BF = 144.7 
+    IKF = 0.545 
+    VAF = 440.1 
+    NR = 0.985 
+    ISC = 4E-12 
+    NC = 1.4 
+    BR = 2.994 
+    IKR = 0.2 
+    VAR = 30 
+    RB = 20 
+    IRB = 0.0002 
+    RBM = 6 
+    RE = 0.3345 
+    RC = 0.76 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 2.716E-11 
+    VJE = 0.6743 
+    MJE = 0.3438 
+    TF = 1.026E-09 
+    XTF = 15 
+    VTF = 5 
+    ITF = 0.3 
+    PTF = 0 
+    CJC = 6.422E-12 
+    VJC = 0.4281 
+    MJC = 0.4077 
+    XCJC = 0.595 
+    TR = 3.28E-07 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.8953
.ENDS
**
**********************************************************
*
* PMST6428
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = 250 - 650  @ 5V/0,1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMST6428 1 2 3
*
Q1 1 2 3 PMST6428 
D1 2 1 DIODE 
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PMST6428 NPN 
+ IS = 3.591E-14 
+ NF = 0.997 
+ ISE = 1.17E-14 
+ NE = 1.95 
+ BF = 600 
+ IKF = 0.08 
+ VAF = 77 
+ NR = 0.9927 
+ ISC = 2.885E-18 
+ NC = 0.8 
+ BR = 20 
+ IKR = 4E+05 
+ VAR = 27 
+ RB = 478 
+ IRB = 2.5E-05 
+ RBM = 1 
+ RE = 0.35 
+ RC = 0.8 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.116E-11 
+ VJE = 0.6 
+ MJE = 0.3536 
+ TF = 3.8E-10 
+ XTF = 6 
+ VTF = 6.4 
+ ITF = 0.16 
+ PTF = 0 
+ CJC = 3.552E-12 
+ VJC = 0.3992 
+ MJC = 0.3822 
+ XCJC = 1 
+ TR = 2.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-16 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.02 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ XTI = 2 
+ EG = 1.11 
.ENDS
**
**********************************************************
*
* PMST6429
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 100 mA
* VCEO = 45 V 
* hFE  = 500 - 1250  @ 5V/0,1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMST6429 1 2 3
*
Q1 1 2 3 PMST6429 
D1 2 1 DIODE
* 
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse
* mode of operation.
*
.MODEL PMST6429 NPN 
+ IS = 3.591E-14 
+ NF = 0.997 
+ ISE = 1.17E-14 
+ NE = 1.95 
+ BF = 600 
+ IKF = 0.08 
+ VAF = 77 
+ NR = 0.9927 
+ ISC = 2.885E-18 
+ NC = 0.8 
+ BR = 20 
+ IKR = 4E+05 
+ VAR = 27 
+ RB = 478 
+ IRB = 2.5E-05 
+ RBM = 1 
+ RE = 0.35 
+ RC = 0.8 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.116E-11 
+ VJE = 0.6 
+ MJE = 0.3536 
+ TF = 3.8E-10 
+ XTF = 6 
+ VTF = 6.4 
+ ITF = 0.16 
+ PTF = 0 
+ CJC = 3.552E-12 
+ VJC = 0.3992 
+ MJC = 0.3822 
+ XCJC = 1 
+ TR = 2.5E-08 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-16 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1.02 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ XTI = 2 
+ EG = 1.11 
.ENDS
**
**********************************************************
*
* PMSTA05
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = min. 50  @ 2V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMSTA05 1 2 3
*
Q1 1 2 3 PMSTA05 
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL PMSTA05 NPN 
+ IS = 5.083E-14 
+ NF = 0.9903 
+ ISE = 3.284E-16 
+ NE = 1.2 
+ BF = 188 
+ IKF = 1.5 
+ VAF = 170 
+ NR = 0.9817 
+ ISC = 3.78E-15 
+ NC = 1.1 
+ BR = 16.51 
+ IKR = 0.12 
+ VAR = 33 
+ RB = 25 
+ IRB = 1E-05 
+ RBM = 0.2 
+ RE = 0.203 
+ RC = 0.25 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.661E-11 
+ VJE = 0.6716 
+ MJE = 0.3424 
+ TF = 6.5E-10 
+ XTF = 8 
+ VTF = 2 
+ ITF = 0.7 
+ PTF = 0 
+ CJC = 1.576E-11 
+ VJC = 0.5623 
+ MJC = 0.4561 
+ XCJC = 1 
+ TR = 2.5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.68 
.MODEL DIODE D 
+ IS = 7.58E-15 
+ N = 0.9585 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 400 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PMSTA06
*
* NXP Semiconductors
*
* General purpose NPN transistors
* IC   = 500 mA
* VCEO = 80 V 
* hFE  = min. 50  @ 2V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PMSTA06 1 2 3 
*
Q1 1 2 3 PMSTA06 
D1 2 1 DIODE 
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL PMSTA06 NPN 
+ IS = 5.083E-14 
+ NF = 0.9903 
+ ISE = 3.284E-16 
+ NE = 1.2 
+ BF = 188 
+ IKF = 1.5 
+ VAF = 170 
+ NR = 0.9817 
+ ISC = 3.78E-15 
+ NC = 1.1 
+ BR = 16.51 
+ IKR = 0.12 
+ VAR = 33 
+ RB = 25 
+ IRB = 1E-05 
+ RBM = 0.2 
+ RE = 0.203 
+ RC = 0.25 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.661E-11 
+ VJE = 0.6716 
+ MJE = 0.3424 
+ TF = 6.5E-10 
+ XTF = 8 
+ VTF = 2 
+ ITF = 0.7 
+ PTF = 0 
+ CJC = 1.576E-11 
+ VJC = 0.5623 
+ MJC = 0.4561 
+ XCJC = 1 
+ TR = 2.5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.68 
.MODEL DIODE D 
+ IS = 7.58E-15 
+ N = 0.9585 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 400 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**#
.SUBCKT PMSTA3904 1 2 3
Q1 1 2 3 MAIN 
Q2 3 1 2 SUB 
D1 2 1 DIODE 
*
.MODEL MAIN NPN 
+ IS = 2.479E-015 
+ NF = 0.9816 
+ ISE = 1E-014 
+ NE = 1.9 
+ BF = 165 
+ IKF = 0.065 
+ VAF = 14 
+ NR = 1.071 
+ ISC = 6.3E-014 
+ NC = 1.5 
+ BR = 0.1 
+ IKR = 1 
+ VAR = 100 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 9.7 
+ RE = 0.18 
+ RC = 0.85 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 7.497E-012 
+ VJE = 0.6169 
+ MJE = 0.285 
+ TF = 2.3E-010 
+ XTF = 10 
+ VTF = 2 
+ ITF = 0.15 
+ PTF = 0 
+ CJC = 2.646E-012 
+ VJC = 0.5023 
+ MJC = 0.3137 
+ XCJC = 1 
+ TR = 2E-006 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
*
.MODEL SUB PNP 
+ IS = 7.339E-015 
+ NF = 0.9974 
+ ISE = 5.702E-012 
+ NE = 1.406 
+ BF = 320.7 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 1.191 
+ ISC = 1.633E-014 
+ NC = 1.426 
+ BR = 0.3811 
+ IKR = 0.09 
+ VAR = 9.5 
+ RB = 10 
+ IRB = 5E-006 
+ RBM = 5E-006 
+ RE = 0.663 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.135E-011 
+ VJE = 0.7071 
+ MJE = 0.3808 
+ TF = 6.546E-010 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.395E-012 
+ VJC = 0.4951 
+ MJC = 0.44 
+ XCJC = 0.6288 
+ TR = 5.5E-008 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9059 
*
.MODEL DIODE D 
+ IS = 1.062E-015 
+ N = 0.9801 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 1000 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 38 
.ENDS*
**********************************************************
*
* PMSTA42
*
* NXP Semiconductors
*
* High voltage NPN transistors
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 25  @ 10V/10mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMSTA42 1 2 3
*
Q1 1 2 3 PMSTA42
D1 2 1 DIODE
*
* The diode does not reflect a
* physical device but improves
* only modeling in the reverse 
* mode of operation.
*
.MODEL PMSTA42 NPN
+ IS = 1.969E-14
+ NF = 0.9875
+ ISE = 4.744E-16
+ NE = 1.099
+ BF = 300
+ IKF = 0.0064
+ VAF = 30.4
+ NR = 1
+ ISC = 1E-14
+ NC = 1.5
+ BR = 3.8
+ IKR = 0.055
+ VAR = 65.4
+ RB = 245
+ IRB = 2E-05
+ RBM = 3
+ RE = 0.1
+ RC = 0.7
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 3.912E-11
+ VJE = 0.6495
+ MJE = 0.3282
+ TF = 1E-09
+ XTF = 10
+ VTF = 25
+ ITF = 0.15
+ PTF = 0
+ CJC = 4.5E-12
+ VJC = 0.3487
+ MJC = 0.3289
+ XCJC = 1
+ TR = 8E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 1.1E-13
+ N = 1
+ BV = 1000
+ IBV = 2E-08
+ RS = 1500
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 2
.ENDS
**
**********************************************************
*
* PMSTA55
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 60 V 
* hFE  = 100 @ 1V/100mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMSTA55 PNP 
+   IS = 6.777E-014 
+   NF = 0.9854 
+   ISE = 5.689E-015 
+   NE = 1.277 
+   BF = 206 
+   IKF = 0.175 
+   VAF = 38 
+   NR = 0.9884 
+   ISC = 1.394E-013 
+   NC = 1.145 
+   BR = 11 
+   IKR = 0.22 
+   VAR = 21 
+   RB = 16 
+   IRB = 0.0004 
+   RBM = 0.763 
+   RE = 0.085 
+   RC = 0.27 
+   XTB = 0 
+   EG = 1.11 
+   XTI = 3 
+   CJE = 6.014E-011 
+   VJE = 0.7796 
+   MJE = 0.4005 
+   TF = 9E-010 
+   XTF = 10 
+   VTF = 0.5 
+   ITF = 0.5 
+   PTF = 0 
+   CJC = 2.439E-011 
+   VJC = 0.6416 
+   MJC = 0.4655 
+   XCJC = 1 
+   TR = 9E-008 
+   CJS = 0 
+   VJS = 0.75 
+   MJS = 0.333 
+   FC = 0.78 
.ENDS
**
**********************************************************
*
* PMSTA56
*
* NXP Semiconductors
*
* General purpose PNP transistor
* IC   = 500 mA
* VCEO = 80 V 
* hFE  = min.100 @ 1V/100mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2       
*
**********************************************************
*#
.MODEL QPMSTA56 PNP 
+   IS = 6.777E-014 
+   NF = 0.9854 
+   ISE = 5.689E-015 
+   NE = 1.277 
+   BF = 206 
+   IKF = 0.175 
+   VAF = 38 
+   NR = 0.9884 
+   ISC = 1.394E-013 
+   NC = 1.145 
+   BR = 11 
+   IKR = 0.22 
+   VAR = 21 
+   RB = 16 
+   IRB = 0.0004 
+   RBM = 0.763 
+   RE = 0.085 
+   RC = 0.27 
+   XTB = 0 
+   EG = 1.11 
+   XTI = 3 
+   CJE = 6.014E-011 
+   VJE = 0.7796 
+   MJE = 0.4005 
+   TF = 9E-010 
+   XTF = 10 
+   VTF = 0.5 
+   ITF = 0.5 
+   PTF = 0 
+   CJC = 2.439E-011 
+   VJC = 0.6416 
+   MJC = 0.4655 
+   XCJC = 1 
+   TR = 9E-008 
+   CJS = 0 
+   VJS = 0.75 
+   MJS = 0.333 
+   FC = 0.78 
.ENDS
**
**********************************************************
*
* PMSTA92
*
* NXP Semiconductors
*
* High voltage PNP transistors
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 40  @ 10V/1mA
*
*
*
* Package: SOT 323
* 
* Package Pin 1: Base
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PMSTA92 1 2 3
* 
Q1 1 2 3 PMSTA92
D1 1 2 DIODE
*
* The diode does not reflect a
* physical device but improves
* only modeling in the reverse 
* mode of operation.
*
.MODEL PMSTA92 PNP
+ IS = 2.749E-14
+ NF = 0.9953
+ ISE = 1.802E-14
+ NE = 1.429
+ BF = 108
+ IKF = 0.004
+ VAF = 30
+ NR = 0.950
+ ISC = 1E-15
+ NC = 2.727
+ BR = 1.5
+ IKR = 0.07
+ VAR = 208
+ RB = 175
+ IRB = 3E-05
+ RBM = 0.05
+ RE = 0.05
+ RC = 0.4
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 4.009E-11
+ VJE = 0.998
+ MJE = 0.4052
+ TF = 1.25E-09
+ XTF = 85
+ VTF = 100
+ ITF = 0.3
+ PTF = 0
+ CJC = 8.74E-12
+ VJC = 0.6629
+ MJC = 0.4667
+ XCJC = 1
+ TR = 1E-05
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 3.219E-13
+ N = 1.027
+ BV = 1000
+ IBV = 1E-07
+ RS = 1000
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ EG = 1.11
+ XTI = 2
.ENDS
**
**********************************************************
*
* PUMB11
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5v/5mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMB11 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB13
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 21/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB13 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB14
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/1mA
* R1   = 47 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB14 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMB19
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/1mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB19 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMB1
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5v/5mA
* R1   = 22k
* R2   = 22k
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 08/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB1 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB24
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5v/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 40/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB24 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB2
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5v/5mA
* R1   = 47 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMB2 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB30
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5v/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB30 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB3
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5v/1mA
* R1   = 4.7 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMB3 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* QPUMB4 
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  @ 5v/1mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMB4 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMB9 
*
* NXP Semiconductors
*
* Resistor-equipped PNP/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/5mA
* R1   = 10 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 01/2003
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMB9 PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD10
*
* NXP Semiconductors
*
* Resistor-equipped NPN/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/10mA
* R1 = 2.2 Kohm
* R2 = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD10_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD10_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD12
*
* NXP Semiconductors
*
* Resistor-equipped NPN/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80  @ 5v/5mA
* R1 = 47 Kohm
* R2 = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD12_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD12_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD13
*
* NXP Semiconductors
*
* Resistor-equipped NPN/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD13_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD13_PNP PNP
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMD14
*
* NXP Semiconductors
*
* Resistor-equipped NPN/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5v/1mA
* R1   = 47 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD14_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD14_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMD15
*
* NXP Semiconductors
*
* Resistor-equipped NPN/PNP transistor
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30  @ 5v/10mA
* R1 = 4.7 Kohm
* R2 = 4.7 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2
* Package Pin 2;5: Base      TR1;TR2  
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD15_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.U01 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD15_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD18 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 50 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD18_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD18_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD19 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/1mA
* R1 = 22 Kohm
* R2 = 22 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 49/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD19_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD19_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMD20  
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 40/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD20_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD20_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD24 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 20 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 100 Kohm
* R2   = 100 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 44/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD24_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD24_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD2 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1   = 22 Kohm
* R2   = 22 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD2_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD2_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.09 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 5.387 
+ VTF = 6.245 
+ ITF = 0.2108 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4434 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD30 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1 = 2.2 Kohm
* R2 = 2.2 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMD30_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD30_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD3 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/5mA
* R1 = 10 Kohm
* R2 = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD3_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD3_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMD48 
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1   = 47 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD48_NPN NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD48_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMD6
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 4.4 Kohm
* R2   = 4.7 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD6_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD6_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMD9
*
* NXP Semiconductors
*
* Resistor equipped NPN/PNP transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/5mA
* R1 = 10 Kohm
* R2 = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMD9_NPN NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
*
.MODEL QPUMD9_PNP PNP 
+ IS = 2.014E-14 
+ NF = 0.9974 
+ ISE = 6.578E-15 
+ NE = 1.45 
+ BF = 339.3 
+ IKF = 0.079 
+ VAF = 39.15 
+ NR = 0.9952 
+ ISC = 1.948E-12 
+ NC = 1.55 
+ BR = 12.01 
+ IKR = 0.015 
+ VAR = 16.5 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5E-06 
+ RE = 0.673 
+ RC = 0.718 
+ CJE = 1.104E-11 
+ VJE = 0.9 
+ MJE = 0.2748 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 6.4E-12 
+ VJC = 0.499 
+ MJC = 0.4435 
+ XCJC = 1 
+ TR = 1E-32 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ XTB = 0 
+ XTI = 3 
+ EG = 1.11 
+ FC = 0.5 
.ENDS
**
**********************************************************
*
* PUMH10
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 2.2 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH10 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH11
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/5mA
* R1 = 10 Kohm
* R1 = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH11 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH13
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100 @ 5V/10mA
* R1   = 4.7 Kohm
* R2   = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 21/2005
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMH13 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH1
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 60 @ 5V/5mA
* R1 = 22 Kohm
* R2 = 22 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
*
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH1 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH2
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 80 @ 5V/5mA
* R1 = 47 Kohm
* R2 = 47 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH2 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH30
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 30 @ 5V/20mA
* R1   = 2.2 Kohm
* R2   = 2.2 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 03/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPUMH30 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH4
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200 @ 5V/1mA
* R1   = 10 Kohm
* R2   = 10 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH4 NPN
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH7
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 200  typ. 330 @ 5V/1mA
* R1 = 4.7 Kohm
* R2 = 4.7 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH7 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMH9
*
* NXP Semiconductors
*
* Resistor equipped NPN/NPN transistor (RET)
* IC   = 100 mA
* VCEO = 50 V 
* hFE  = min. 100  @ 5V/5mA
* R1 = 10 Kohm
* R2 = 4.7 Kohm
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMH9 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
**
**********************************************************
*
* PUMT1
*
* NXP Semiconductors
*
* General purpose PNP double transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMT1 PNP 
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79 
.ENDS
**
**********************************************************
*
* PUMX1
*
* NXP Semiconductors
*
* General purpose NPN double transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.MODEL QPUMX1 NPN
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
**
**********************************************************
*
* PUMX2
*
* NXP Semiconductors
*
* General purpose NPN/NPN double transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 560  @ 6V/1mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 33/2005
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PUMX2 1 2 3
*
Q1 1 2 3 PUMX2
D1 2 1 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation of the 
* transistor.
*
.MODEL PUMX2 NPN
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* PUMZ1
*
* NXP Semiconductors
*
* General purpose NPN/PNP double transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = min. 120  @ 6V/1mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PUMZ1_NPN 1 2 3
*
Q1 1 2 3 PUMZ1_NPN
*
.MODEL PUMZ1_NPN NPN
+     IS=2.456E-14
+     NF=0.997
+     ISE=4.908E-15
+     NE=1.706
+     BF=265.4  
+     IKF=0.1357
+     VAF=63.2
+     NR=1.004
+     ISC=6.272E-14
+     NC=1.243  
+     BR=6.657
+     IKR=0.1144
+     VAR=25.9
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.4683
+     RC=1.31
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.384E-11  
+     VJE=0.5561
+     MJE=0.3437
+     TF=5.275E-10
+     XTF=127
+     VTF=1.441  
+     ITF=0.565
+     PTF=0
+     CJC=4.399E-12
+     VJC=0.2006
+     MJC=0.3344  
+     XCJC=0.6193
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.8361 
.ENDS
*
.SUBCKT PUMZ1_PNP 1 2 3
*
Q2 1 2 3 PUMZ1_PNP
*
.MODEL PUMZ1_PNP PNP
+     IS=2.514E-14
+     NF=0.9978
+     ISE=5.697E-15
+     NE=1.421
+     BF=315.5  
+     IKF=0.08039
+     VAF=40.01
+     NR=1.001
+     ISC=2.533E-14
+     NC=1.25  
+     BR=9.217
+     IKR=0.047
+     VAR=32.02
+     RB=1
+     IRB=1E-06
+     RBM=1  
+     RE=0.6308
+     RC=0.956
+     XTB=0
+     EG=1.11
+     XTI=3
+     CJE=1.17E-11  
+     VJE=0.746
+     MJE=0.4143
+     TF=6.328E-10
+     XTF=6.555
+     VTF=2.416  
+     ITF=0.129
+     PTF=0
+     CJC=6.96E-12
+     VJC=0.778
+     MJC=0.6596  
+     XCJC=0.6288
+     TR=1E-32
+     CJS=0
+     VJS=0.75
+     MJS=0.333
+     FC=0.79 
.ENDS
**
**********************************************************
*
* PUMZ2 
*
* NXP Semiconductors
*
* General purpose NPN/PNP double transistor
* IC   = 150 mA
* VCEO = 50 V 
* hFE  = 120 - 560  @ 6V/1mA
*
*
*
* Package: SOT 363
* 
* Package Pin 1;4: Emitter   TR1;TR2 
* Package Pin 2;5: Base      TR1;TR2
* Package Pin 3;6: Collector TR2;TR1
*
*
* Extraction date (week/year): 46/2003
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PUMZ2_NPN 1 2 3
*
Q1 1 2 3 PUMZ2_NPN
D1 2 1 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation of the PNP
* transistor.
*
.MODEL PUMZ2_NPN NPN 
+ IS = 9.134E-15
+ NF = 0.9775
+ ISE = 5.035E-16
+ NE = 1.4
+ BF = 267.4
+ IKF = 0.095
+ VAF = 38
+ NR = 0.9848
+ ISC = 1.713E-15
+ NC = 1.034
+ BR = 17
+ IKR = 0.0075
+ VAR = 11.5
+ RB = 75
+ IRB = 0.0002144
+ RBM = 0.108
+ RE = 0.4
+ RC = 0.95
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.126E-11
+ VJE = 0.7922
+ MJE = 0.3954
+ TF = 4.5E-10
+ XTF = 1.5
+ VTF = 20
+ ITF = 0.07
+ PTF = 0
+ CJC = 1.031E-11
+ VJC = 1
+ MJC = 0.6227
+ XCJC = 1
+ TR = 5.1E-08
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4.065E-18
+ N = 0.9309
+ BV = 1000
+ IBV = 0.001
+ RS = 0.02115
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
*
.SUBCKT PUMZ2_PNP 1 2 3
*
Q1 1 2 3 PUMZ2_PNP
D1 1 2 DIODE
*
* The diode does not reflect a 
* physical device but improves 
* only modeling in the reverse 
* mode of operation of the PNP
* transistor.
*
.MODEL PUMZ2_PNP PNP
+ IS = 1.217E-14
+ NF = 0.9803
+ ISE = 1.129E-15
+ NE = 1.342
+ BF = 300
+ IKF = 0.16
+ VAF = 130
+ NR = 0.9758
+ ISC = 8.952E-15
+ NC = 1.2
+ BR = 6.2
+ IKR = 0.075
+ VAR = 20
+ RB = 10
+ IRB = 8E-05
+ RBM = 1
+ RE = 0.5
+ RC = 0.75
+ XTB = 0
+ EG = 1.11
+ XTI = 3
+ CJE = 1.362E-11
+ VJE = 0.7287
+ MJE = 0.36
+ TF = 3.8E-10
+ XTF = 1.5
+ VTF = 15
+ ITF = 0.085
+ PTF = 0
+ CJC = 5.522E-12
+ VJC = 0.4075
+ MJC = 0.3704
+ XCJC = 1
+ TR = 1E-07
+ CJS = 0
+ VJS = 0.75
+ MJS = 0.333
+ FC = 0.78
.MODEL DIODE D
+ IS = 4E-17
+ N = 1
+ BV = 1000
+ IBV = 0.001
+ RS = 0.1
+ CJO = 0
+ VJ = 1
+ M = 0.5
+ FC = 0
+ TT = 0
+ XTI = 2
+ EG = 1.11
.ENDS
**
**********************************************************
*
* PXT2222A 
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 100 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 10V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 09/2002
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPXT2222A NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PXT2907A
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 600 mA
* VCEO = 60 V 
* hFE  = 100 - 300  @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPXT2907A PNP
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PXT4401
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 02/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPXT4401 NPN
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PXT4403
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 2V/150mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 02/2009 
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPXT4403 PNP
+    IS = 3.202E-14 
+    NF = 0.9778 
+    ISE = 3.543E-15 
+    NE = 1.45 
+    BF = 226.9 
+    IKF = 0.55 
+    VAF = 50.66 
+    NR = 0.979 
+    ISC = 8.53E-15 
+    NC = 1.09 
+    BR = 22.84 
+    IKR = 0.09 
+    VAR = 14 
+    RB = 28 
+    IRB = 0.00021 
+    RBM = 2.5 
+    RE = 0.11 
+    RC = 0.2467 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.539E-11 
+    VJE = 0.8759 
+    MJE = 0.4257 
+    TF = 5.109E-10 
+    XTF = 5 
+    VTF = 7 
+    ITF = 0.7 
+    PTF = 12 
+    CJC = 2.452E-11 
+    VJC = 0.9 
+    MJC = 0.546 
+    XCJC = 0.601 
+    TR = 1.6E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PXTA14
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 20000  @ 5V/100mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PXTA14 1 2 3 
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 PXTA14 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 PXTA14 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 PXTA14 1 
Q2 1 33 3 PXTA14 5.1 
*
.MODEL PXTA14 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* PXTA42
*
* NXP Semiconductors
*
* High - voltage NPN transistor
* IC   = 00 mA
* VCEO = 300 V 
* hFE  = min. 40  @ 10V/30mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PXTA42 1 2 3
*
Q1 1 2 3 PXTA42 
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL PXTA42 NPN 
+ IS = 1.272E-14 
+ NF = 0.9815 
+ ISE = 1.929E-15 
+ NE = 1.278 
+ BF = 115.3 
+ IKF = 0.035 
+ VAF = 80 
+ NR = 0.975 
+ ISC = 1E-16 
+ NC = 4.472 
+ BR = 5.79 
+ IKR = 0.03 
+ VAR = 28 
+ RB = 390 
+ IRB = 2.94E-06 
+ RBM = 0.1 
+ RE = 0.194 
+ RC = 0.81 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.948E-11 
+ VJE = 0.755 
+ MJE = 0.3519 
+ TF = 1.3E-09 
+ XTF = 19 
+ VTF = 5 
+ ITF = 0.08 
+ PTF = 0 
+ CJC = 4.485E-12 
+ VJC = 0.1287 
+ MJC = 0.3746 
+ XCJC = 1 
+ TR = 5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-13 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 621.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PXTA92 
*
* NXP Semiconductors
*
* High - voltage PNP transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 40  @ 10V/10mA
*
*
*
* Package: SOT 89
* 
* Package Pin 1: Emitter    
* Package Pin 2: Collector
* Package Pin 3: Base
*
*
* Extraction date (week/year): 29/2006
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPXTA92 PNP 
+ IS = 1.737E-14 
+ NF = 0.9934 
+ ISE = 8.208E-15 
+ NE = 1.559 
+ BF = 141.4 
+ IKF = 0.8 
+ VAF = 350 
+ NR = 0.9755 
+ ISC = 2.097E-10 
+ NC = 1.65 
+ BR = 2.5 
+ IKR = 0.06 
+ VAR = 17 
+ RB = 70 
+ IRB = 5E-05 
+ RBM = 0.3 
+ RE = 0.418 
+ RC = 2.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.916E-11 
+ VJE = 0.7361 
+ MJE = 0.3612 
+ TF = 1.356E-09 
+ XTF = 19 
+ VTF = 9 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 1.071E-11 
+ VJC = 0.726 
+ MJC = 0.5717 
+ XCJC = 0.413 
+ TR = 3.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999
.ENDS
**
**********************************************************
*
* PZT2222A 
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = min. 75  @ 10V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 02/2009
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPZT2222A NPN 
+    IS=29.13E-15 
+    NF=992.6E-3 
+    ISE=9.652E-15 
+    NE=1.516  
+    BF=256.7  
+    IKF = 489.9E-3 
+    VAF = 80.99  
+    NR = 984.4E-3 
+    ISC = 320.3E-12 
+    NC = 1.608  
+    BR = 6.590  
+    IKR = 192.9E-3 
+    VAR = 101.2  
+    RB = 1.000  
+    IRB = 1.000E-3 
+    RBM = 1.000  
+    RE = 193.4E-3 
+    RC = 224.8E-3 
+    XTB = 0.000  
+    EG = 1.110  
+    XTI = 3.000  
+    CJE = 25.89E-12 
+    VJE = 689.1E-3 
+    MJE = 366.8E-3 
+    TF = 293.9E-12 
+    XTF = 71.78  
+    VTF = 20.00  
+    ITF = 4.797  
+    PTF = 0.000  
+    CJC = 10.11E-12 
+    VJC = 662.2E-3 
+    MJC = 416.0E-3 
+    XCJC = 0.5946  
+    TR = 320.0E-9 
+    CJS = 0.000  
+    VJS = 750.0E-3 
+    MJS = 333.0E-3 
+    FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PZT2907A
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 600 mA
* VCEO = 60 V 
* hFE  = 100 - 300  @ 10V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 00/00
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPZT2907A PNP 
+    IS = 4.43E-14 
+    NF = 0.9912 
+    ISE = 1.088E-14 
+    NE = 1.778 
+    BF = 247 
+    IKF = 0.505 
+    VAF = 46.5 
+    NR = 0.9921 
+    ISC = 7.13E-15 
+    NC = 1.08 
+    BR = 17.69 
+    IKR = 0.06 
+    VAR = 14 
+    RB = 34 
+    IRB = 0.00015 
+    RBM = 2.5 
+    RE = 0.1092 
+    RC = 0.25 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.37E-11 
+    VJE = 0.8967 
+    MJE = 0.4354 
+    TF = 4.9E-10 
+    XTF = 4 
+    VTF = 10 
+    ITF = 0.7 
+    PTF = 0 
+    CJC = 2.203E-11 
+    VJC = 0.9 
+    MJC = 0.4495 
+    XCJC = 0.6 
+    TR = 8E-09 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PZT4401
*
* NXP Semiconductors
*
* Switching NPN transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 00/00
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPZT4401 NPN
+   IS=29.13E-15 
+   NF=992.6E-3 
+   ISE=9.652E-15 
+   NE=1.516  
+   BF=256.7  
+   IKF = 489.9E-3 
+   VAF = 80.99  
+   NR = 984.4E-3 
+   ISC = 320.3E-12 
+   NC = 1.608  
+   BR = 6.590  
+   IKR = 192.9E-3 
+   VAR = 101.2  
+   RB = 1.000  
+   IRB = 1.000E-3 
+   RBM = 1.000  
+   RE = 193.4E-3 
+   RC = 224.8E-3 
+   XTB = 0.000  
+   EG = 1.110  
+   XTI = 3.000  
+   CJE = 25.89E-12 
+   VJE = 689.1E-3 
+   MJE = 366.8E-3 
+   TF = 293.9E-12 
+   XTF = 71.78  
+   VTF = 20.00  
+   ITF = 4.797  
+   PTF = 0.000  
+   CJC = 10.11E-12 
+   VJC = 662.2E-3 
+   MJC = 416.0E-3 
+   XCJC = 0.5946
+   TR = 320.0E-9 
+   CJS = 0.000  
+   VJS = 750.0E-3 
+   MJS = 333.0E-3 
+   FC = 938.8E-3 
.ENDS
**
**********************************************************
*
* PZT4403
*
* NXP Semiconductors
*
* Switching PNP transistor
* IC   = 600 mA
* VCEO = 40 V 
* hFE  = 100 - 300  @ 1V/150mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 00/00
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPZT4403 PNP
+    IS = 3.202E-14 
+    NF = 0.9778 
+    ISE = 3.543E-15 
+    NE = 1.45 
+    BF = 226.9 
+    IKF = 0.55 
+    VAF = 50.66 
+    NR = 0.979 
+    ISC = 8.53E-15 
+    NC = 1.09 
+    BR = 22.84 
+    IKR = 0.09 
+    VAR = 14 
+    RB = 28 
+    IRB = 0.00021 
+    RBM = 2.5 
+    RE = 0.11 
+    RC = 0.2467 
+    XTB = 0 
+    EG = 1.11 
+    XTI = 3 
+    CJE = 3.539E-11 
+    VJE = 0.8759 
+    MJE = 0.4257 
+    TF = 5.109E-10 
+    XTF = 5 
+    VTF = 7 
+    ITF = 0.7 
+    PTF = 12 
+    CJC = 2.452E-11 
+    VJC = 0.9 
+    MJC = 0.546 
+    XCJC = 0.601 
+    TR = 1.6E-08 
+    CJS = 0 
+    VJS = 0.75 
+    MJS = 0.333 
+    FC = 0.999
.ENDS
**
**********************************************************
*
* PZTA14
*
* NXP Semiconductors
*
* Darlington NPN transistor
* IC   = 500 mA
* VCEO = 30 V 
* hFE  = min. 20000  @ 5V/100mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PZTA14 1 2 3
*
* For use with Microsim PSPICE 
* please modify the AREA statement
* in this model:  e.g.
* SPICE: 
* Q2 1 22 3 PZTA14 AREA = 5.1 
* PSPICE:
* Q2 1 22 3 PZTA14 5.1 
* VTF, ITF, XTF are set to 
* default values 
*
Q1 1 2 33 PZTA14 1 
Q2 1 33 3 PZTA14 5.1 
*
.MODEL PZTA14 NPN 
+ IS = 1.35E-14 
+ NF = 0.9889 
+ ISE = 4.441E-28 
+ NE = 1.03 
+ BF = 204 
+ IKF = 0.1 
+ VAF = 94 
+ NR = 1 
+ ISC = 1E-32 
+ NC = 2 
+ BR = 5 
+ IKR = 0.1 
+ VAR = 10 
+ RB = 45 
+ IRB = 7E-06 
+ RBM = 1 
+ RE = 0.25 
+ RC = 2 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.445E-11 
+ VJE = 0.9 
+ MJE = 0.3635 
+ TF = 7E-10 
+ XTF = 1 
+ VTF = 1000 
+ ITF = 0.01 
+ PTF = 0 
+ CJC = 4.89E-12 
+ VJC = 0.6559 
+ MJC = 0.5115 
+ XCJC = 1 
+ TR = 1E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999 
.ENDS
**
**********************************************************
*
* PZTA42
*
* NXP Semiconductors
*
* High-voltage NPN transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 40  @ 10V/30mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* 
* Simulator: Spice 2
*
**********************************************************
*#
.SUBCKT PZTA42 1 2 3
*
Q1 1 2 3 PZTA42
D1 2 1 DIODE
*
* The diode does not reflect a physical
* device but improves only modeling
* in the reverse mode of operation
*
.MODEL PZTA42 NPN 
+ IS = 1.272E-14 
+ NF = 0.9815 
+ ISE = 1.929E-15 
+ NE = 1.278 
+ BF = 115.3 
+ IKF = 0.035 
+ VAF = 80 
+ NR = 0.975 
+ ISC = 1E-16 
+ NC = 4.472 
+ BR = 5.79 
+ IKR = 0.03 
+ VAR = 28 
+ RB = 390 
+ IRB = 2.94E-06 
+ RBM = 0.1 
+ RE = 0.194 
+ RC = 0.81 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.948E-11 
+ VJE = 0.755 
+ MJE = 0.3519 
+ TF = 1.3E-09 
+ XTF = 19 
+ VTF = 5 
+ ITF = 0.08 
+ PTF = 0 
+ CJC = 4.485E-12 
+ VJC = 0.1287 
+ MJC = 0.3746 
+ XCJC = 1 
+ TR = 5E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 1E-13 
+ N = 1 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 621.1 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PZTA44
*
* NXP Semiconductors
*
* High-voltage NPN transistor
* IC   = 300 mA
* VCEO = 400 V 
* hFE  = 50 - 200  @ 10V/10mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 26/2006
* Simulator: Spice 3
*
**********************************************************
*#
.SUBCKT PZTA44 1 2 3
*
Q1 1 2 3 PZTA44
D1 2 1 DIODE
*
*The diode does not reflect a 
*physical device but improves 
*only modeling in the reverse 
*mode of operation.
*
.MODEL PZTA44 NPN
+ IS = 3.681E-014 
+ NF = 0.9863 
+ ISE = 1.09E-015 
+ NE = 1.106 
+ BF = 88 
+ IKF = 0.038 
+ VAF = 20 
+ NR = 0.991 
+ ISC = 1.413E-015 
+ NC = 2.58 
+ BR = 6.026 
+ IKR = 1.5 
+ VAR = 122 
+ RB = 25 
+ IRB = 0.00012 
+ RBM = 0.7535 
+ RE = 0.1 
+ RC = 0.11 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.989E-010 
+ VJE = 0.55 
+ MJE = 0.2987 
+ TF = 4.13E-009 
+ XTF = 3 
+ VTF = 1.5 
+ ITF = 0.1 
+ PTF = 0 
+ CJC = 1.778E-011 
+ VJC = 0.2964 
+ MJC = 0.3355 
+ XCJC = 1 
+ TR = 2E-007 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 2.312E-013 
+ N = 1.01 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 280.5 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
**
**********************************************************
*
* PZTA92
*
* NXP Semiconductors
*
* High-voltage PNP transistor
* IC   = 100 mA
* VCEO = 300 V 
* hFE  = min. 40  @ 10V/10mA
*
*
*
* Package: SOT 223
* 
* Package Pin 1: Base    
* Package Pin 2: Collector
* Package Pin 3: Emitter
* Package Pin 4: Collector
*
* Extraction date (week/year): 38/2004
* Simulator: Spice 3
*
**********************************************************
*#
.MODEL QPZTA92 PNP 
+ IS = 1.737E-14 
+ NF = 0.9934 
+ ISE = 8.208E-15 
+ NE = 1.559 
+ BF = 141.4 
+ IKF = 0.8 
+ VAF = 350 
+ NR = 0.9755 
+ ISC = 2.097E-10 
+ NC = 1.65 
+ BR = 2.5 
+ IKR = 0.06 
+ VAR = 17 
+ RB = 70 
+ IRB = 5E-05 
+ RBM = 0.3 
+ RE = 0.418 
+ RC = 2.5 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 3.916E-11 
+ VJE = 0.7361 
+ MJE = 0.3612 
+ TF = 1.356E-09 
+ XTF = 19 
+ VTF = 9 
+ ITF = 0.2 
+ PTF = 0 
+ CJC = 1.071E-11 
+ VJC = 0.726 
+ MJC = 0.5717 
+ XCJC = 0.413 
+ TR = 3.3E-07 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.999
.ENDS
*