*
.SUBCKT 1PS10SB82 1 2 
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 3E+7 
D1 1 2 1PS10SB82
*
.MODEL 1PS10SB82 D 
+ IS = 1.042E-8 
+ N = 1.029 
+ BV = 17 
+ IBV = 0.001 
+ RS = 5.567 
+ CJO = 9.779E-13 
+ VJ = 0.2925 
+ M = 0.194 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS*
.SUBCKT 1PS66SB17 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 6E+07
D1 1 6 1PS66SB17
R2 2 5 6E+07
D2 2 5 1PS66SB17
R3 3 4 6E+07
D3 3 4 1PS66SB17
*
.MODEL 1PS66SB17 D 
+ IS = 1.419E-09 
+ N = 1.022 
+ BV = 6 
+ IBV = 2.45E-06 
+ RS = 5.112 
+ CJO = 7.662E-13
+ VJ = 0.1681 
+ M = 0.1995
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT 1PS66SB82 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 3E+7
D1 1 6 1PS66SB82
R2 2 5 3E+7
D2 2 5 1PS66SB82
R3 3 4 3E+7
D3 3 4 1PS66SB82
*
.MODEL 1PS66SB82 D 
+ IS = 1.042E-8 
+ N = 1.029 
+ BV = 17 
+ IBV = 0.001 
+ RS = 5.567 
+ CJO = 9.779E-13 
+ VJ = 0.2925 
+ M = 0.194 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT 1ps70sb10 1 3 
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 1ps70sb10  
*
.MODEL 1ps70sb10 D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
*
*
.SUBCKT 1ps70sb14 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 1ps70sb14
R2 3 2 3.6E+07
D2 3 2 1ps70sb14 
*
.MODEL 1ps70sb14 D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
*
*
.SUBCKT 1ps70sb15 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 1ps70sb15
R2 2 3 3.6E+07
D2 2 3 1ps70sb15 
*
.MODEL 1ps70sb15 D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT 1ps70sb16 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 3 1 3.6E+07 
D1 3 1 1ps70sb16
R2 3 2 3.6E+07
D2 3 2 1ps70sb16 
*
.MODEL 1ps70sb16 D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT 1PS70SB20 1 2
* The Resistor R1 does not reflect
* a physical device. Instead it 
* improves modeling in the reverse
* mode of operation.
*
R1 1 2 4.018E+06
D1 1 2 1PS70SB20
*
.MODEL 1PS70SB20 D(
+ IS = 4.291E-06
+ N = 1.002
+ BV = 44
+ IBV = 3.0E-05
+ RS = 0.3772
+ CJO = 7.8E-11
+ VJ = 0.4015
+ M = 0.508
+ FC = 0.1
+ TT = 0
+ EG = 0.69
+ XTI = 2)
.ENDS
**
.SUBCKT 1PS70SB40 1 3
* The Resistor R1 does not reflect 
* a physical device.  Instead it 
* improves modeling in the reverse
* mode of operation.
R1 1 3 6.659E+08 
D1 1 3 1PS70SB40
*
.MODEL 1PS70SB40 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS70SB44 1 2 3
* The Resistors do not reflect
* physical devices.  Instead they 
* improve modeling in the reverse
* mode of operation.
R1 1 3 6.659E+08 
D1 1 3 1PS70SB44
R2 3 2 6.659E+08
D2 3 2 1PS70SB44
*
.MODEL 1PS70SB44 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS70SB45 1 2 3
* The Resistors do not reflect
* physical devices.  Instead they 
* improve modeling in the reverse
* mode of operation.
R1 1 3 6.659E+08 
D1 1 3 1PS70SB45
R2 2 3 6.659E+08
D2 2 3 1PS70SB45
*
.MODEL 1PS70SB45 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS70SB46 1 2 3
* The Resistors do not reflect
* physical devices.  Instead they 
* improve modeling in the reverse
* mode of operation.
R1 3 1 6.659E+08 
D1 3 1 1PS70SB46
R2 3 2 6.659E+08
D2 3 2 1PS70SB46
*
.MODEL 1PS70SB46 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS70SB82 1 2 3
*
R1 1 3 3E+07
D1 1 3 1PS70SB82
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
.MODEL 1PS70SB82 D
+ IS = 1.042E-08
+ N = 1.029
+ BV = 20
+ IBV = 0.001
+ RS = 5.567
+ CJO = 1.029E-12
+ VJ = 0.2159
+ M = 0.1731
+ FC = 0
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS


*
.SUBCKT 1PS70SB84 1 2 3
*
R1 1 3 3E+07
D1 1 3 1PS70SB84
R2 3 2 3E+07
D2 3 2 1PS70SB84  
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
.MODEL 1PS70SB84 D
+ IS = 1.042E-08
+ N = 1.029
+ BV = 20
+ IBV = 0.001
+ RS = 5.567
+ CJO = 1.029E-12
+ VJ = 0.2159
+ M = 0.1731
+ FC = 0
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS


*
.SUBCKT 1PS70SB85 1 2 3
*
R1 1 3 3E+07
D1 1 3 1PS70SB85
R2 2 3 3E+07
D2 2 3 1PS70SB85
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
.MODEL 1PS70SB85 D
+ IS = 1.042E-08
+ N = 1.029
+ BV = 20
+ IBV = 0.001
+ RS = 5.567
+ CJO = 1.029E-12
+ VJ = 0.2159
+ M = 0.1731
+ FC = 0
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS


*
.SUBCKT 1PS70SB86 1 2 3
*
R1 3 1 3E+07
D1 3 1 1PS70SB86
R2 3 2 3E+07
D2 3 2 1PS70SB86
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
.MODEL 1PS70SB86 D
+ IS = 1.042E-08
+ N = 1.029
+ BV = 20
+ IBV = 0.001
+ RS = 5.567
+ CJO = 1.029E-12
+ VJ = 0.2159
+ M = 0.1731
+ FC = 0
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS


*
.SUBCKT 1PS74SB23 1 2 
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse
* mode of operation.
R1 1 2 2.56E+05 
D1 1 2 1PS74SB23
.MODEL 1PS74SB23 D 
+ IS = 6.984E-06 
+ N = 1.023 
+ BV = 30 
+ IBV = 0.0002402 
+ RS = 0.1574 
+ CJO = 3.075E-10 
+ VJ = 0.6615 
+ M = 0.6098 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT 1PS75SB45 1 2 3
*
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse
* mode of operation.
*
R1 1 3 8E+08 
D1 1 3 1PS75SB45
R2 2 3 8E+08
D2 2 3 1PS75SB45 
.MODEL 1PS75SB45 D( 
+ IS = 9.114E-09 
+ N = 1.006 
+ BV = 45 
+ IBV = 7.8E-05 
+ RS = 4.563 
+ CJO = 3.895E-12 
+ VJ = 0.3192 
+ M = 0.4008 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS76SB10 1 2 
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse
* mode of operation.
R1 1 2 2.9E+07 
D1 1 2 1PS76SB10 
.MODEL 1PS76SB10 D( 
+ IS = 2.548E-07 
+ N = 1.02 
+ BV = 33 
+ IBV = 1.251E-06 
+ RS = 2.582 
+ CJO = 9.92E-12 
+ VJ = 0.317 
+ M = 0.4411 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
*.SUBCKT 1PS76SB17 1 2 
* The Resistor R1 does not reflect
* a physical device.  Instead it
* improves modeling in the reverse
* mode of operation.
R1 1 2 6E+07 
D1 1 2 1PS76SB17 
.MODEL 1PS76SB17 D( 
+ IS = 1.419E-09 
+ N = 1.022 
+ BV = 6 
+ IBV = 2.45E-06 
+ RS = 5.112 
+ CJO = 7.867E-13 
+ VJ = 0.1043 
+ M = 0.1439 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
*
**
.SUBCKT 1PS76SB21 1 2 
* The Resistor R1 does not reflect
* a physical device.  Instead it 
* improves modeling in the 
* reverse mode of operation.
R1 1 2 5.9E+06 
D1 1 2 1PS76SB21 
.MODEL 1PS76SB21 D (
+ IS = 1.009E-06 
+ N = 1.017 
+ BV = 44 
+ IBV = 0.001611 
+ RS = 0.6578 
+ CJO = 3.76E-11 
+ VJ = 0.274 
+ M = 0.4381 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 )
.ENDS
**
.SUBCKT 1PS76SB40 1 2 
* The Resistor R1 does not 
* reflect a physical device. 
* Instead it improves modeling
* in the reverse mode of 
* operation.
R1 2 1 6.659E+08 
D1 2 1 1PS76SB40
*
.MODEL 1PS76SB40 D
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT 1PS76SB70 1 2 
* The Resistor R1 does not reflect a
* physical device.  Instead it improves
* modeling in the reverse mode of
* operation.
R1 1 2 1.409E+09 
D1 1 2 1PS76SB70  
.MODEL 1PS76SB70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS79SB10 1 2 
* The Resistor R1 does not reflect a
* physical device.  Instead it improves
* modeling in the reverse mode of
* operation.
R1 1 2 3.5E+07 
D1 1 2 1PS79SB10 
* 
.MODEL 1PS79SB10 D( 
+ IS = 2.36E-07 
+ N = 1.009 
+ BV = 33 
+ IBV = 0.001 
+ RS = 2.633 
+ CJO = 9.53E-12 
+ VJ = 0.2034 
+ M = 0.3811 
+ FC = 0.6435 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT 1PS79SB17 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 6E+07
D1 3 1 1PS79SB17
*
.MODEL 1PS79SB17 D
+ IS = 1.419E-9
+ N = 1.022
+ BV = 6
+ IBV = 2.45E-6 
+ RS = 5.112
+ CJO = 7.662E-13
+ VJ = 0.1681
+ M = 0.1995
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT 1PS79SB30 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 9.5E+07
D1 1 2 1PS79SB30
*
.MODEL 1PS79SB30 D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT 1PS79SB31 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 4.771E+06
D1 1 2 1PS79SB31
*
.MODEL 1PS79SB31 D
+ IS = 9.539E-07
+ N = 1.007
+ BV = 35
+ IBV = 4E-05
+ RS = 0.4678
+ CJO = 3.518E-11
+ VJ = 0.3193
+ M = 0.4687
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS*
.SUBCKT 1PS79SB40 1 2
*
* The resistor does not reflect a
* physical devices.  Instead it improves
* modeling in the reverse mode of
* operation.
*
R1 2 1 8E+08
D1 2 1 1PS79SB40
.MODEL 1PS79SB40 D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 1
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
**
* 1PS88SB48
* The resistors do not reflect 
* physical devices.  Instead 
* they improve modeling in the
* reverse mode of operation.
*
.SUBCKT 1PS88SB48 1 2 3 4 5 6
R1 1 6 8.961E+08 
D1 1 6 1PS88SB48 
R2 2 6 8.961E+08
D2 2 6 1PS88SB48
R3 4 3 8.961E+08
D3 4 3 1PS88SB48
R4 5 3 8.961E+08
D4 5 3 1PS88SB48
.MODEL 1PS88SB48 D 
+ IS = 9.649E-09 
+ N = 1.013 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 4.999 
+ CJO = 3.928E-12 
+ VJ = 0.2057 
+ M = 0.3426 
+ FC = 4.441E-16 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS*
.SUBCKT 1PS88SB82 1 2 3 4 5 6
*
R1 1 6 3E+07
D1 1 6 1PS88SB82
R2 2 5 3E+07
D2 2 5 1PS88SB82
R3 3 4 3E+07
D3 3 4 1PS88SB82
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
.MODEL 1PS88SB82 D
+ IS = 1.042E-08
+ N = 1.029
+ BV = 20
+ IBV = 0.001
+ RS = 5.567
+ CJO = 1.029E-12
+ VJ = 0.2159
+ M = 0.1731
+ FC = 0
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS


*
.SUBCKT BAS40-04 1 2 3 
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40-04
R2 3 2 6.659E+08
D2 3 2 BAS40-04 
*
.MODEL BAS40-04 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-04W 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40-04W 
R2 3 2 6.659E+08
D2 3 2 BAS40-04W 
*
.MODEL BAS40-04W D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-05 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40-05 
R2 2 3 6.659E+08
D2 2 3 BAS40-05 
*
.MODEL BAS40-05 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-05V 1 2 3 4 5 6
*
* The resistors do not 
* reflect a physical devices. Instead they
* improve modelling in the reverse
* mode of operation.
*
R1 1 6 8E+08
D1 1 6 BAS40-05V 
R2 2 6 8E+08
D2 2 6 BAS40-05V
R3 4 3 8E+08
D3 4 3 BAS40-05V
R4 5 3 8E+08
D4 5 3 BAS40-05V
*
.MODEL BAS40-05V D( 
+ IS = 9.114E-09 
+ N = 1.006 
+ BV = 45 
+ IBV = 7.8E-05 
+ RS = 4.563 
+ CJO = 3.895E-12 
+ VJ = 0.3192 
+ M = 0.4008 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-05W 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40-05W 
R2 2 3 6.659E+08
D2 2 3 BAS40-05W 
*
.MODEL BAS40-05W D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-06 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 3 1 6.659E+08 
D1 3 1 BAS40-06
R2 3 2 6.659E+08
D2 3 2 BAS40-06
*
.MODEL BAS40-06 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-06W 1 2 3
* The resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 3 1 6.659E+08 
D1 3 1 BAS40-06W 
R2 3 2 6.659E+08
D2 3 2 BAS40-06W 
*
.MODEL BAS40-06W D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40-07 1 2 3 4
*
* The resistor does not reflect a
* physical devices.  Instead it improves
* modeling in the reverse mode of
* operation.
*
R1 4 1 8E+08
D1 4 1 BAS40-07
R2 3 2 8E+08
D2 3 2 BAS40-07
*
.MODEL BAS40-07 D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 1
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAS40-07V 1 3 4 6
*
* The resistor does not reflect a
* physical devices.  Instead it improves
* modeling in the reverse mode of
* operation.
*
R1 1 6 8E+08
D1 1 6 BAS40-07V
R2 4 3 8E+08
D2 4 3 BAS40-07V

*
.MODEL BAS40-07V D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 1
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAS40H 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 8E+08
D1 1 2 BAS40H
*
.MODEL BAS40H D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 1
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAS40L 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 8E+08
D1 2 1 BAS40L
*
.MODEL BAS40L D 
+ IS = 9.114E-9 
+ N = 1.006 
+ BV = 45 
+ IBV = 7.8E-5 
+ RS = 4.563 
+ CJO = 3.895E-12 
+ VJ = 0.3192 
+ M = 0.4008 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAS40 1 3 
* The Resistor R1 does not 
* reflect a physical device. 
* Instead it improves modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40 
*
.MODEL BAS40 D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40W 1 3 
* The Resistor R1 does not 
* reflect a physical device. 
* Instead it improves modeling
* in the reverse mode of 
* operation.
R1 1 3 6.659E+08 
D1 1 3 BAS40W 
*
.MODEL BAS40W D( 
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS40XY 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 8E+08
D1 1 6 BAS40XY
R2 6 2 8E+08
D2 6 2 BAS40XY
R3 3 5 8E+08
D3 3 5 BAS40XY
R4 4 3 8E+08
D4 4 3 BAS40XY
*
.MODEL BAS40XY D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 1
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAS70-04 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70
R2 3 2 1.409E+09 
D2 3 2 BAS70
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-04W 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70W
R2 3 2 1.409E+09 
D2 3 2 BAS70W
*
.MODEL BAS70W D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-05 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70
R2 2 3 1.409E+09 
D2 2 3 BAS70
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-05W 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70W
R2 2 3 1.409E+09 
D2 2 3 BAS70W
.MODEL BAS70W D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-06 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 3 1 1.409E+09 
D1 3 1 BAS70
R2 3 2 1.409E+09 
D2 3 2 BAS70
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-06W 1 2 3
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 3 1 1.409E+09 
D1 3 1 BAS70W
R2 3 2 1.409E+09 
D2 3 2 BAS70W
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-07 1 2 3 4
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
R1 4 1 1.409E+09 
D1 4 1 BAS70
R2 3 2 1.409E+09 
D2 3 2 BAS70
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70-07V 1 3 4 6
*
R1 1 6 1.409E+09
D1 1 6 BAS70-07V
R2 4 3 1.409E+09
D2 4 3 BAS70-07V
*
.MODEL BAS70-07V D
+ IS = 3.22E-09 
+ N = 1.018     
+ BV = 77       
+ IBV = 1.67E-07
+ RS = 20.89    
+ CJO = 1.655E-12
+ VJ = 0.349    
+ M = 0.3583    
+ FC = 0.5      
+ TT = 0
+ EG = 0.69     
+ XTI = 2       
.ENDS*
.SUBCKT BAS70H 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 1.409E+09
D1 1 2 BAS70H
*
.MODEL BAS70H D
+ IS = 3.22E-09 
+ N = 1.018     
+ BV = 77       
+ IBV = 1.67E-07
+ RS = 20.89    
+ CJO = 1.655E-12
+ VJ = 0.349    
+ M = 0.3583    
+ FC = 0.5      
+ EG = 0.69     
+ XTI = 2       
.ENDS
**
.SUBCKT BAS70L 1 2 
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 2 1.409E+9 
D1 1 2 BAS70L 
*
.MODEL BAS70L D 
+ IS = 3.22E-9 
+ N = 1.018 
+ BV = 77 
+ IBV = 1.67E-7 
+ RS = 20.89 
+ CJO = 1.608E-12 
+ VJ = 0.3891 
+ M = 0.3683 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAS70 1 3 
* The Resistor R1 does not reflect 
* a physical device.  Instead it 
* improves modeling in the reverse
* mode of operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70 
.MODEL BAS70 D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70VV 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 1.409E+09
D1 1 6 BAS70VV
R2 2 5 1.409E+09
D2 2 5 BAS70VV
R3 3 4 1.409E+09
D3 3 4 BAS70VV
*
.MODEL BAS70VV D
+ IS = 3.22E-09
+ N = 1.018
+ BV = 77 
+ IBV = 1.67E-07
+ RS = 20.89 
+ CJO = 1.655E-12
+ VJ = 0.349 
+ M = 0.3583 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAS70W 1 3 
* The Resistor R1 does not reflect 
* a physical device.  Instead it 
* improves modeling in the reverse
* mode of operation.
R1 1 3 1.409E+09 
D1 1 3 BAS70W  
.MODEL BAS70W D( 
+ IS = 3.22E-09 
+ N = 1.018 
+ BV = 77
+ IBV = 1.67E-07 
+ RS = 20.89 
+ CJO = 1.655E-12 
+ VJ = 0.349
+ M = 0.3583
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAS70XY 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 1.409E+9
D1 1 6 BAS70XY
R2 6 2 1.409E+9
D2 6 2 BAS70XY
R3 3 5 1.409E+9
D3 3 5 BAS70XY
R4 4 3 1.409E+9
D4 4 3 BAS70XY
*
.MODEL BAS70XY D
+ IS = 3.22E-9 
+ N = 1.018     
+ BV = 77       
+ IBV = 1.67E-7
+ RS = 20.89    
+ CJO = 1.655E-12
+ VJ = 0.349    
+ M = 0.3583    
+ FC = 0.5      
+ EG = 0.69     
+ XTI = 2       
.ENDS
**
.SUBCKT BAT120A 1 3 4
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse
* mode of operation.
R1 4 1 2.56E+05 
D1 4 1 BAT120A
R2 4 3 2.56E+05 
D2 4 3 BAT120A
.MODEL BAT120A (D 
+ IS = 6.984E-06 
+ N = 1.023 
+ BV = 30 
+ IBV = 0.0002402 
+ RS = 0.1574 
+ CJO = 3.075E-10 
+ VJ = 0.6615 
+ M = 0.6098 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 )
.ENDS
**
.SUBCKT BAT120C 1 3 4
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse
* mode of operation.
R1 1 4 2.56E+05 
D1 1 4 BAT120C
R2 3 4 2.56E+05 
D2 3 4 BAT120C
.MODEL BAT120C (D 
+ IS = 6.984E-06 
+ N = 1.023 
+ BV = 30 
+ IBV = 0.0002402 
+ RS = 0.1574 
+ CJO = 3.075E-10 
+ VJ = 0.6615 
+ M = 0.6098 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 )
.ENDS
**
.SUBCKT BAT120S 1 3 4
* The resistor do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse
* mode of operation.
R1 1 4 2.56E+05 
D1 1 4 BAT120S
R2 4 3 2.56E+05 
D2 4 3 BAT120S
.MODEL BAT120S (D 
+ IS = 6.984E-06 
+ N = 1.023 
+ BV = 30 
+ IBV = 0.0002402 
+ RS = 0.1574 
+ CJO = 3.075E-10 
+ VJ = 0.6615 
+ M = 0.6098 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 )
.ENDS
**
.SUBCKT BAT160A 1 2 3 4
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 4 1 1E+7
D1 4 1 BAT160A
R1 4 3 1E+7
D1 4 3 BAT160A
*
.MODEL BAT160A D
+ IS = 5E-7
+ N = 0.9751
+ BV = 66
+ IBV = 0.0004
+ RS = 0.3422
+ CJO = 1.75E-10
+ VJ = 0.3761
+ M = 0.4725
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAT160C 1 2 3 4
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 4 1E+7
D1 1 4 BAT160C
R1 3 4 1E+7
D1 3 4 BAT160C
*
.MODEL BAT160C D
+ IS = 5E-7
+ N = 0.9751
+ BV = 66
+ IBV = 0.0004
+ RS = 0.3422
+ CJO = 1.75E-10
+ VJ = 0.3761
+ M = 0.4725
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAT160S 1 2 3 4
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 4 1E+7
D1 1 4 BAT160S
R1 4 3 1E+7
D1 4 3 BAT160S
*
.MODEL BAT160S D
+ IS = 5E-7
+ N = 0.9751
+ BV = 66
+ IBV = 0.0004
+ RS = 0.3422
+ CJO = 1.75E-10
+ VJ = 0.3761
+ M = 0.4725
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAT17 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 6E+07
D1 1 3 BAT17
*
.MODEL BAT17 D 
+ IS = 1.419E-09 
+ N = 1.022 
+ BV = 6 
+ IBV = 2.45E-06 
+ RS = 5.112 
+ CJO = 7.867E-13 
+ VJ = 0.1043 
+ M = 0.1439 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT54A 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 3 1 3.6E+07 
D1 3 1 BAT54A
R2 3 2 3.6E+07
D2 3 2 BAT54A 
*
.MODEL BAT54A D(
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2)
**
.SUBCKT BAT54AW 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 3 1 3.6E+07 
D1 3 1 BAT54AW
R2 3 2 3.6E+07
D2 3 2 BAT54AW 
*
.MODEL BAT54AW D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 7E-9 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54CM 1 2 3
*
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54CM
R2 2 3 3.6E+07
D2 2 3 BAT54CM
*
.MODEL BAT54CM D 
+ IS = 2.117E-07 
+ N = 1.016 
+ BV = 36 
+ IBV = 1.196E-06 
+ RS = 2.637 
+ CJO = 1.114E-11 
+ VJ = 0.2013 
+ M = 0.3868 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT BAT54C 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54C
R2 2 3 3.6E+07
D2 2 3 BAT54C
*
.MODEL BAT54C D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54CV 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.*
*
R1 1 6 3.6E+7 
D1 1 6 BAT54CV
R2 2 6 3.6E+7 
D2 2 6 BAT54CV
R3 4 3 3.6E+7 
D3 4 3 BAT54CV
R4 5 3 3.6E+7 
D4 5 3 BAT54CV
*
.MODEL BAT54CV D 
+ IS = 2.117E-7 
+ N = 1.016 
+ BV = 36 
+ IBV = 1.196E-6 
+ RS = 2.637 
+ CJO = 1.114E-11 
+ VJ = 0.2013 
+ M = 0.3868 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT BAT54CW 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54CW
R2 2 3 3.6E+07
D2 2 3 BAT54CW 
*
.MODEL BAT54CW D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 7E-9 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54H 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 3.5E+07
D1 2 1 BAT54H
*
.MODEL BAT54H D 
+ IS = 2.36E-07 
+ N = 1.009 
+ BV = 33 
+ IBV = 0.001 
+ RS = 2.633 
+ CJO = 9.53E-12 
+ VJ = 0.2034 
+ M = 0.3811 
+ FC = 0.6435 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT54J 1 2
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
D1 2 1 BAT54J
R1 2 1 3.5E+07 
* 
.MODEL BAT54J D 
+ IS = 2.36E-07 
+ N = 1.009 
+ BV = 33 
+ IBV = 0.001 
+ RS = 2.633 
+ CJO = 9.53E-12 
+ VJ = 0.2034 
+ M = 0.3811 
+ FC = 0.6435 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT54L 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 3.6E+7 
D1 2 1 BAT54L
*
.MODEL BAT54L D 
+ IS = 2.117E-7 
+ N = 1.016 
+ BV = 36 
+ IBV = 1.196E-6 
+ RS = 2.637 
+ CJO = 1.114E-11 
+ VJ = 0.2013 
+ M = 0.3868 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT BAT54 1 3 
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54  
*
.MODEL BAT54 D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54S 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54S
R2 3 2 3.6E+07
D2 3 2 BAT54S 
*
.MODEL BAT54S D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 0 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54SW 1 2 3
* The resistors do not reflect 
* physical devices.  Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54SW
R2 3 2 3.6E+07
D2 3 2 BAT54SW 
*
.MODEL BAT54SW D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 7E-9 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54VV 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
D1 1 6 BAT54VV 
R1 1 6 3.5E+07 
D2 2 5 BAT54VV 
R2 2 5 3.5E+07
D3 3 4 BAT54VV 
R3 3 4 3.5E+07
* 
.MODEL BAT54VV D 
+ IS = 2.36E-07 
+ N = 1.009 
+ BV = 33 
+ IBV = 0.001 
+ RS = 2.633 
+ CJO = 9.53E-12 
+ VJ = 0.2034 
+ M = 0.3811 
+ FC = 0.6435 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT54W 1 2 3 
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 3.6E+07 
D1 1 3 BAT54W  
*
.MODEL BAT54W D( 
+    IS = 2.117E-07 
+    N = 1.016 
+    BV = 36 
+    IBV = 1.196E-06 
+    RS = 2.637 
+    CJO = 1.114E-11 
+    VJ = 0.2013 
+    M = 0.3868 
+    FC = 0 
+    TT = 7E-9 
+    EG = 0.69 
+    XTI = 2) 
**
.SUBCKT BAT54XY 1 2 3 4 5 6
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 4.795E+7
D1 1 6 BAT54XY
R2 6 2 4.795E+7
D2 6 2 BAT54XY
R3 4 3 4.795E+7
D3 4 3 BAT54XY
R4 3 5 4.795E+7
D4 3 5 BAT54XY
*
.MODEL BAT54XY D
+ IS = 2.019E-007
+ N = 1.003
+ BV = 33
+ IBV = 1.5E-006
+ RS = 2.759
+ CJO = 7.258E-012
+ VJ = 0.2049
+ M = 0.3577
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT BAT720 1 2 
R1 1 2 2.8E+06 
D1 1 2 DBAT720 
*
* The Resistor R1 does not reflect
* a physical device.  Instead it
* improves modeling in the reverse
* mode of operation 
*
.MODEL DBAT720 D 
+ IS = 1.281E-06 
+ N = 1.009 
+ BV = 44 
+ IBV = 2.21E-05 
+ RS = 0.3093 
+ CJO = 8.133E-11 
+ VJ = 0.4519 
+ M = 0.5304 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT721A 1 2 3
* The resistors do not reflect
* physical devices. Instead they 
* improve modeling in the reverse
* mode of operation. 
R1 3 1 5.9E+06 
D1 3 1 BAT721A
R2 3 2 5.9E+06 
D2 3 2 BAT721A
* 
.MODEL BAT721A D( 
+ IS = 1.009E-06 
+ N = 1.017 
+ BV = 44 
+ IBV = 0.001611 
+ RS = 0.6578 
+ CJO = 3.76E-11 
+ VJ = 0.274 
+ M = 0.4381 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAT721C 1 2 3
* The resistors do not reflect
* physical devices. Instead they 
* improve modeling in the reverse
* mode of operation. 
R1 1 3 5.9E+06 
D1 1 3 BAT721C
R2 2 3 5.9E+06 
D2 2 3 BAT721C
* 
.MODEL BAT721C D( 
+ IS = 1.009E-06 
+ N = 1.017 
+ BV = 44 
+ IBV = 0.001611 
+ RS = 0.6578 
+ CJO = 3.76E-11 
+ VJ = 0.274 
+ M = 0.4381 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS 
**
.SUBCKT BAT721 1 3
* The resistor R1 does not reflect
* a physical device. Instead it 
* improves modeling in the reverse
* mode of operation. 
R1 1 3 5.9E+06 
D1 1 3 BAT721
* 
.MODEL BAT721 D( 
+ IS = 1.009E-06 
+ N = 1.017 
+ BV = 44 
+ IBV = 0.001611 
+ RS = 0.6578 
+ CJO = 3.76E-11 
+ VJ = 0.274 
+ M = 0.4381 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS 
**
.SUBCKT BAT721S 1 2 3
* The resistors do not reflect
* physical devices. Instead they 
* improve modeling in the reverse
* mode of operation. 
R1 1 3 5.9E+06 
D1 1 3 BAT721S
R2 3 2 5.9E+06 
D2 3 2 BAT721S
* 
.MODEL BAT721S D( 
+ IS = 1.009E-06 
+ N = 1.017 
+ BV = 44 
+ IBV = 0.001611 
+ RS = 0.6578 
+ CJO = 3.76E-11 
+ VJ = 0.274 
+ M = 0.4381 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAT74 1 2 3 4
* The resistors do not reflect
* physical devices.  Instead they
* improve modeling in the reverse
* mode of operation.
R1 4 1 2.9E+07 
D1 4 1 BAT74 
R2 3 2 2.9E+07
D2 3 2 BAT74
*
.MODEL BAT74 D( 
+ IS = 2.548E-07 
+ N = 1.02 
+ BV = 33 
+ IBV = 1.251E-06 
+ RS = 2.582 
+ CJO = 9.92E-12 
+ VJ = 0.317 
+ M = 0.4411 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2) 
.ENDS
**
.SUBCKT BAT74V 1 3 4 6 
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
D1 1 6 BAT74V 
R1 1 6 3.5E+07 
D2 4 3 BAT74V 
R2 4 3 3.5E+07
* 
.MODEL BAT74V D 
+ IS = 2.36E-07 
+ N = 1.009 
+ BV = 33 
+ IBV = 0.001 
+ RS = 2.633 
+ CJO = 9.53E-12 
+ VJ = 0.2034 
+ M = 0.3811 
+ FC = 0.6435 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT754L 1 2 3 4 5 6
*
* The resistors do not reflect 
* physical devices. Instead they
* improve modeling in the reverse 
* mode of operation.
*
R1 1 6 3.558E+07
D1 1 6 BAT754L
R2 2 5 3.558E+07
D2 2 5 BAT754L
R3 3 4 3.558E+07
D3 3 4 BAT754L
*
.MODEL BAT754L D
+ IS = 2.993E-07
+ N = 1.01
+ BV = 30
+ IBV = 1.5E-06
+ RS = 2.734
+ CJO = 9.228E-12
+ VJ = 0.3033
+ M = 0.4131
+ FC = 0.5178
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT BAT760 1 2
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
R1 1 2 2E+06
D1 1 2 DBAT760
*
.MODEL DBAT760 D (
+ IS = 1.686E-06
+ N = 1.015
+ BV = 21
+ IBV = 1E-06
+ RS = 0.1249
+ CJO = 9.086E-11
+ VJ = 0.1939
+ M = 0.4542
+ FC = 1
+ TT = 0
+ EG = 0.69
+ XTI = 2 )
.ENDS*
.SUBCKT BAT854AW 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 9.5E+07
D1 3 1 BAT854AW
R2 3 2 9.5E+07
D2 3 2 BAT854AW
*
.MODEL BAT854AW D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT BAT854CW 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 9.5E+07
D1 1 3 BAT854CW
R2 2 3 9.5E+07
D2 2 3 BAT854CW
*
.MODEL BAT854CW D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT BAT854SW 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 9.5E+07
D1 1 3 BAT854SW
R2 3 2 9.5E+07
D2 3 2 BAT854SW
*
.MODEL BAT854SW D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT BAT854W 1 3
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 9.5E+07
D1 1 3 BAT854W
*
.MODEL BAT854W D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT BAT85 1 2
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
D1 1 2 BAT85
R1 1 2 5.416E+7 
* 
.MODEL BAT85 D 
+ IS = 2.076E-7 
+ N = 1.023 
+ BV = 33 
+ IBV = 10E-6 
+ RS = 2.326 
+ CJO = 1.21E-11 
+ VJ = 0.1319 
+ M = 0.2904 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT BAT960 1 2 3 4 5 6
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
R1 3 1 2E+06
D1 3 1 BAT960
*
* The resistors R2...R5 are only for 
* pinning of the device
*
R2 1 2 0
R3 3 4 0
R4 1 5 0
R5 1 6 0
*
.MODEL BAT960 D (
+ IS = 1.686E-06
+ N = 1.015
+ BV = 21
+ IBV = 1E-06
+ RS = 0.1249
+ CJO = 9.086E-11
+ VJ = 0.1939
+ M = 0.4542
+ FC = 1
+ TT = 0
+ EG = 0.69
+ XTI = 2 )
.ENDS*
.SUBCKT PMBD354 1 2 3
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 3 1 6E+07
D1 3 1 PMBD354
R2 2 3 6E+07
D2 2 3 PMBD354
*
.MODEL PMBD354 D 
+ IS = 1.419E-09 
+ N = 1.022 
+ BV = 6 
+ IBV = 2.45E-06 
+ RS = 5.112 
+ CJO = 7.867E-13 
+ VJ = 0.1043 
+ M = 0.1439 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG1020EA 1 2
D1 2 1 PMEG1020EA
R1 2 1 1.2E+4
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
.MODEL PMEG1020EA D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG1020EH 1 2
D1 2 1 PMEG1020EH
R1 2 1 1.2E+4
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
.MODEL PMEG1020EH D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG1020EJ 1 2
D1 2 1 PMEG1020EJ
R1 2 1 1.2E+4
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
.MODEL PMEG1020EJ D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG1020EV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
D1 1 2 PMEG1020EV
R1 1 2 1.2E+4
*
* The resistors R1...R4 are only for
* pinning of the device
*
R1 3 4 0
R2 1 2 0
R3 1 5 0
R4 1 6 0
*
.MODEL PMEG1020EV D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG1030EH 1 2
*
D1 2 1 PMEG1030EH
R1 2 1 1.2E+4
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
.MODEL PMEG1030EH D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG1030EJ 1 2
*
D1 2 1 PMEG1030EJ
R1 2 1 1.2E+4
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
.MODEL PMEG1030EJ D
+ IS = 0.000259
+ N = 1.014
+ RS = 0.0635
+ BV = 12
+ IBV = 0.01
+ CJO = 2.553E-10
+ VJ = 0.0331
+ M = 0.3788
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2005AEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2005AEA
*
.MODEL PMEG2005AEA D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2005AEL 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+5
D1 2 1 PMEG2005AEL
*
.MODEL PMEG2005AEL D
+ IS = 8.724E-5
+ N = 0.9699
+ BV = 22
+ IBV = 0.0004
+ RS = 0.2728
+ CJO = 2.999E-11
+ VJ = 0.2604
+ M = 0.3755
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2005AEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 1E+6
D1 3 1 PMEG2005AEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R31 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG2005AEV D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2005EB 1 2 
*
* The resistor R1 does not 
* reflect a physical device. Instead it
* improves modelling in the reverse
* mode of operation.
*
D1 2 1 PMEG2005EB
R1 2 1 3E+6 
* 
.MODEL PMEG2005EB D 
+ IS = 9.985E-7 
+ N = 0.9283 
+ BV = 32 
+ IBV = 0.001 
+ RS = 0.2146 
+ CJO = 6.105E-11 
+ VJ = 0.1 
+ M = 0.4159 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS*
.SUBCKT PMEG2005EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2005EH
*
.MODEL PMEG2005EH D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS*
.SUBCKT PMEG2005EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2005EJ
*
.MODEL PMEG2005EJ D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2005EL 1 2 
*
* The resistor R1 does not 
* reflect a physical device. Instead it
* improves modelling in the reverse
* mode of operation.
*
D1 2 1 PMEG2005EL
R1 2 1 3E+6 
* 
.MODEL PMEG2005EL D 
+ IS = 9.985E-7 
+ N = 0.9283 
+ BV = 32 
+ IBV = 0.001 
+ RS = 0.2146 
+ CJO = 6.105E-11 
+ VJ = 0.1 
+ M = 0.4159 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS*
.SUBCKT PMEG2005ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 1E+6
D1 1 3 PMEG2005ET
*
.MODEL PMEG2005ET D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010AEB 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+5
D1 2 1 PMEG2010AEB
*
.MODEL PMEG2010AEB D
+ IS = 8.724E-5
+ N = 0.9699
+ BV = 22
+ IBV = 0.0004
+ RS = 0.2728
+ CJO = 2.999E-11
+ VJ = 0.2604
+ M = 0.3755
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010AEH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2010AEH
*
.MODEL PMEG2010AEH D
+ IS = 5.409E-6
+ N = 1.02
+ BV = 22
+ IBV = 5E-5
+ RS = 0.05676
+ CJO = 1.908E-10
+ VJ = 0.3408
+ M = 0.4863
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010AEJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.5E+6
D1 2 1 PMEG2010AEJ
*
.MODEL PMEG2010AEJ D
+ IS = 1.686E-06
+ N = 1.015
+ BV = 24
+ IBV = 0.001
+ RS = 0.1249
+ CJO = 6.969E-11
+ VJ = 0.4003
+ M = 0.4944
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010AET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 1E+6
D1 1 3 PMEG2010AET
*
.MODEL PMEG2010AET D
+ IS = 5.409E-6
+ N = 1.02
+ BV = 22
+ IBV = 5E-5
+ RS = 0.05676
+ CJO = 1.908E-10
+ VJ = 0.3408
+ M = 0.4863
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010BEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2010BEA
*
.MODEL PMEG2010BEA D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010BEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 1E+6
D1 3 1 PMEG2010BEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R3 1 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG2010BEV D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010EA 1 2
*
* The resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
R1 2 1 2E+06
D1 2 1 PMEG2010EA
*
.MODEL PMEG2010EA D (
+ IS = 1.686E-06
+ N = 1.015
+ BV = 21
+ IBV = 1E-06
+ RS = 0.1249
+ CJO = 9.086E-11
+ VJ = 0.1939
+ M = 0.4542
+ FC = 1
+ EG = 0.69
+ XTI = 2 )
.ENDS*
.SUBCKT PMEG2010EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2010EH
*
.MODEL PMEG2010EH D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2010EJ
*
.MODEL PMEG2010EJ D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2010ER 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 9E+4 
D1 2 1 PMEG2010ER
* 
.MODEL PMEG2010ER D 
+ IS = 3.228E-5 
+ N = 1.019 
+ BV = 22 
+ IBV = 0.005 
+ RS = 0.02675 
+ CJO = 3.379E-10 
+ VJ = 0.3862 
+ M = 0.5113
+ FC = 0.5
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG2010ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 1E+6
D1 1 3 PMEG2010ET
*
.MODEL PMEG2010ET D
+ IS = 3.334E-6
+ N = 0.9791
+ BV = 22
+ IBV = 0.0001
+ RS = 0.08222
+ CJO = 1.266E-10
+ VJ = 0.3619
+ M = 0.5
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2015EA 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.5E+6
D1 2 1 PMEG2015EA
*
.MODEL PMEG2015EA D
+ IS = 1.686E-06
+ N = 1.015
+ BV = 24
+ IBV = 0.001
+ RS = 0.1249
+ CJO = 6.969E-11
+ VJ = 0.4003
+ M = 0.4944
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2015EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.5E+6
D1 2 1 PMEG2015EH
*
.MODEL PMEG2015EH D
+ IS = 1.686E-06
+ N = 1.015
+ BV = 24
+ IBV = 0.001
+ RS = 0.1249
+ CJO = 6.969E-11
+ VJ = 0.4003
+ M = 0.4944
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2015EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.5E+6
D1 2 1 PMEG2015EJ
*
.MODEL PMEG2015EJ D
+ IS = 1.686E-06
+ N = 1.015
+ BV = 24
+ IBV = 0.001
+ RS = 0.1249
+ CJO = 6.969E-11
+ VJ = 0.4003
+ M = 0.4944
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2015EV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 2E+6
D1 3 1 PMEG2015EV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R3 1 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG2015EV D 
+ IS = 1.175E-6
+ N = 0.9841
+ BV = 24
+ IBV = 0.001
+ RS = 0.1476
+ CJO = 7.035E-11
+ VJ = 0.3891
+ M = 0.4845
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2020AEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+006
D1 2 1 PMEG2020AEA
*
.MODEL PMEG2020AEA D
+ IS = 5.409E-6
+ N = 1.02
+ BV = 22
+ IBV = 5E-5
+ RS = 0.05676
+ CJO = 1.908E-10
+ VJ = 0.3408
+ M = 0.4863
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG2020EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1E+6
D1 2 1 PMEG2020EJ
*
.MODEL PMEG2020EJ D
+ IS = 5.409E-6
+ N = 1.02
+ BV = 22
+ IBV = 5E-5
+ RS = 0.05676
+ CJO = 1.908E-10
+ VJ = 0.3408
+ M = 0.4863
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3002AEB 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 4.771E+06
D1 2 1 PMEG3002AEB
*
.MODEL PMEG3002AEB D
+ IS = 9.539E-07
+ N = 1.007
+ BV = 35
+ IBV = 4E-05
+ RS = 0.4678
+ CJO = 3.518E-11
+ VJ = 0.3193
+ M = 0.4687
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS*
.SUBCKT PMEG3002AEL 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 4.771E+06
D1 2 1 PMEG3002AEL
*
.MODEL PMEG3002AEL D
+ IS = 9.539E-07
+ N = 1.007
+ BV = 35
+ IBV = 4E-05
+ RS = 0.4678
+ CJO = 3.518E-11
+ VJ = 0.3193
+ M = 0.4687
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005AEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3005AEA
*
.MODEL PMEG3005AEA D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005AEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 1.3E+6
D1 3 1 PMEG3005AEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R31 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG3005AEV D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005EB 1 2
R1 2 1 1E+6
D1 2 1 PMEG3005EB
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG3005EB D
+ IS = 1.028E-5
+ N = 0.9172
+ BV = 33
+ IBV = 0.001
+ RS = 0.3489
+ CJO = 3.874E-11
+ VJ = 0.3188
+ M = 0.4641
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3005EH
*
.MODEL PMEG3005EH D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3005EJ
*
.MODEL PMEG3005EJ D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005EL 1 2
R1 2 1 1E+6
D1 2 1 PMEG3005EL
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG3005EL D
+ IS = 1.028E-5
+ N = 0.9172
+ BV = 33
+ IBV = 0.001
+ RS = 0.3489
+ CJO = 3.874E-11
+ VJ = 0.3188
+ M = 0.4641
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3005ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 1.3E+6
D1 1 3 PMEG3005ET
*
.MODEL PMEG3005ET D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010BEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3010BEA
*
.MODEL PMEG3010BEA D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010BEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 1.3E+6
D1 3 1 PMEG3010BEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R3 1 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG3010BEV D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT PMEG3010CEH 1 2
*
D1 2 1 PMEG3010CEH
R1 2 1 5E+6
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL DIODE D 
+ IS = 3.735E-007
+ N = 0.994
+ BV = 33
+ IBV = 1E-005
+ RS = 0.07992
+ CJO = 1.645E-10
+ VJ = 0.4041
+ M = 0.4946
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010CEJ 1 2
*
D1 2 1 PMEG3010CEJ
R1 2 1 5E+6
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG3010CEJ D 
+ IS = 3.735E-007
+ N = 0.994
+ BV = 33
+ IBV = 1E-005
+ RS = 0.07992
+ CJO = 1.645E-010
+ VJ = 0.4041
+ M = 0.4946
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010EB 1 2
R1 2 1 1E+6
D1 2 1 PMEG3010EB
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG3010EB D
+ IS = 1.028E-5
+ N = 0.9172
+ BV = 33
+ IBV = 0.001
+ RS = 0.3489
+ CJO = 3.874E-11
+ VJ = 0.3188
+ M = 0.4641
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3010EH
*
.MODEL PMEG3010EH D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.3E+6
D1 2 1 PMEG3010EJ
*
.MODEL PMEG3010EJ D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3010EP 1 2  
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.015E+5 
D1 2 1 PMEG3010EP 
*
.MODEL PMEG3010EP D
+ IS = 2.464E-5 
+ N = 1.003 
+ BV = 33 
+ IBV = 0.005
+ RS = 0.02955 
+ CJO = 3.288E-10 
+ VJ = 0.3778 
+ M = 0.5149 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG3010ER 1 2  
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.015E+5 
D1 2 1 PMEG3010ER 
*
.MODEL PMEG3010ER D
+ IS = 2.464E-5 
+ N = 1.003 
+ BV = 33 
+ IBV = 0.005
+ RS = 0.02955 
+ CJO = 3.288E-10 
+ VJ = 0.3778 
+ M = 0.5149 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG3010ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 1.3E+6
D1 1 3 PMEG3010ET
*
.MODEL PMEG3010ET D
+ IS = 2.936E-6
+ N = 0.9839
+ BV = 33
+ IBV = 7.5E-5
+ RS = 0.1166
+ CJO = 1.068E-10
+ VJ = 0.3459
+ M = 0.4948
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3015EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2E+5
D1 2 1 PMEG3015EH
*
.MODEL PMEG3015EH D
+ IS = 1.05E-5
+ N = 0.998
+ BV = 33
+ IBV = 0.0004
+ RS = 0.08651
+ CJO = 1.189E-10
+ VJ = 0.3379
+ M = 0.4795
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3015EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2E+5
D1 2 1 PMEG3015EJ
*
.MODEL PMEG3015EJ D
+ IS = 1.05E-5
+ N = 0.998
+ BV = 33
+ IBV = 0.0004
+ RS = 0.08651
+ CJO = 1.189E-10
+ VJ = 0.3379
+ M = 0.4795
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3015EV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 2E+5
D1 3 1 PMEG3015EV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R31 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG3015EV D
+ IS = 1.05E-5
+ N = 0.998
+ BV = 33
+ IBV = 0.0004
+ RS = 0.08651
+ CJO = 1.189E-10
+ VJ = 0.3379
+ M = 0.4795
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3020CEP 1 2  
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.015E+5 
D1 2 1 PMEG3020CEP 
*
.MODEL PMEG3020CEP D
+ IS = 2.464E-5 
+ N = 1.003 
+ BV = 33 
+ IBV = 0.005
+ RS = 0.02955 
+ CJO = 3.288E-10 
+ VJ = 0.3778 
+ M = 0.5149 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG3020EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2E+5
D1 2 1 PMEG3020EH
*
.MODEL PMEG3020EH D
+ IS = 1.05E-5
+ N = 0.998
+ BV = 33
+ IBV = 0.0004
+ RS = 0.08651
+ CJO = 1.189E-10
+ VJ = 0.3379
+ M = 0.4795
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3020EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2E+5
D1 2 1 PMEG3020EJ
*
.MODEL PMEG3020EJ D
+ IS = 1.05E-5
+ N = 0.998
+ BV = 33
+ IBV = 0.0004
+ RS = 0.08651
+ CJO = 1.189E-10
+ VJ = 0.3379
+ M = 0.4795
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG3020ER 1 2  
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 1.015E+5 
D1 2 1 PMEG3020ER 
*
.MODEL PMEG3020ER D
+ IS = 2.464E-5 
+ N = 1.003 
+ BV = 33 
+ IBV = 0.005
+ RS = 0.02955 
+ CJO = 3.288E-10 
+ VJ = 0.3778 
+ M = 0.5149 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG4002EB 1 2 
*
D1 2 1 PMEG4002EB
R1 2 1 1.26E+8 
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG4002EB D 
+ IS = 7.409E-8 
+ N = 1.01 
+ BV = 44 
+ IBV = 1E-5 
+ RS = 0.6919 
+ CJO = 2.402E-11 
+ VJ = 0.3356 
+ M = 0.4335 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG4002EL 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 9.5E+07
D1 2 1 PMEG4002EL
*
.MODEL PMEG4002EL D
+ IS = 8E-08
+ N = 1.012
+ BV = 45
+ IBV = 0.0001
+ RS = 0.8243
+ CJO = 2.515E-11
+ VJ = 0.4182
+ M = 0.4941
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4005AEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4005AEA
*
.MODEL PMEG4005AEA D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4005AEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 2.5E+6
D1 3 1 PMEG4005AEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R31 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG4005AEV D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4005EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4005EH
*
.MODEL PMEG4005EH D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4005EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4005EJ
*
.MODEL PMEG4005EJ D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4005ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 2.5E+6
D1 1 3 PMEG4005ET
*
.MODEL PMEG4005ET D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4010BEA 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4010BEA
*
.MODEL PMEG4010BEA D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4010BEV 1 2 3 4 5 6
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 3 1 2.5E+6
D1 3 1 PMEG4010BEV
*
* The resistors R2...R5 are only for
* pinning of the device
*
R2 3 4 0
R3 1 2 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG4010BEV D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
*
*
.SUBCKT PMEG4010CEH 1 2
*
D1 2 1 PMEG4010CEH
R1 2 1 1E+7
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG4010CEH D
+ IS = 2.802E-7
+ N = 0.9521
+ BV = 44
+ IBV = 6E-6
+ RS = 0.1201
+ CJO = 1.288E-10
+ VJ = 0.3855
+ M = 0.4889
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4010CEJ 1 2
*
D1 2 1 PMEG4010CEJ
R1 2 1 1E+7
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG4010CEJ D
+ IS = 2.802E-7
+ N = 0.9521
+ BV = 44
+ IBV = 6E-6
+ RS = 0.1201
+ CJO = 1.288E-10
+ VJ = 0.3855
+ M = 0.4889
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4010EH 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4010EH
*
.MODEL PMEG4010EH D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG4010EJ 1 2
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 2.5E+6
D1 2 1 PMEG4010EJ
*
.MODEL PMEG4010EJ D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
*.SUBCKT PMEG4010EP 1 2
*
R1 2 1 4.936E+7 
D1 2 1  PMEG4010EP 
*
.MODEL PMEG4010EP 
+ IS = 7.219E-7 
+ N = 1.01 
+ BV = 42 
+ IBV = 1E-3 
+ RS = 0.04694 
+ CJO = 2.383E-10 
+ VJ = 0.3188 
+ M = 0.4641 
+ EG = 0.69 
+ XTI = 2 
.ENDS
*.SUBCKT PMEG4010ER 1 2 
*
R1 2 1 4.936E+7 
D1 2 1 PMEG4010ER 
*
.MODEL PMEG4010ER 
+ IS = 7.036E-7 
+ N = 0.9946 
+ BV = 42 
+ IBV = 1E-3 
+ RS = 0.05644 
+ CJO = 2.391E-10 
+ VJ = 0.3188 
+ M = 0.4641 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PMEG4010ET 1 2 3
*
* The Resistor R1 does not reflect 
* a physical device.  Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 1 3 2.5E+6
D1 1 3 PMEG4010ET
*
.MODEL PMEG4010ET D
+ IS = 2.831E-6
+ N = 0.9816
+ BV = 44
+ IBV = 5E-5
+ RS = 0.1975
+ CJO = 8.437E-11
+ VJ = 0.3116
+ M = 0.4789
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG6002EB 1 2
*
D1 2 1 PMEG6002EB
R1 2 1 5E+006
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG6002EB D
+ IS = 7.716E-7
+ N = 0.981
+ BV = 66
+ IBV = 0.001
+ RS = 1.099
+ CJO = 2.586E-11
+ VJ = 0.3612
+ M = 0.4686
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG6002TV 1 2 3 4 5 6
*
D1 1 6 PMEG6002TV
R1 1 6 5E+006
D2 4 3 PMEG6002TV
R2 4 3 5E+006
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
.MODEL PMEG6002TV D
+ IS = 7.716E-7
+ N = 0.981
+ BV = 66
+ IBV = 0.001
+ RS = 1.099
+ CJO = 2.586E-11
+ VJ = 0.3612
+ M = 0.4686
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG6010AED 1 2 3 4 5 6
*
* The resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
R1 3 1 1E+7
D1 3 1 PMEG6010AED
*
* The resistors R2...R5 are only for 
* pinning of the device
*
R2 1 2 0
R3 3 4 0
R4 1 5 0
R5 1 6 0
*
.MODEL PMEG6010AED D
+ IS = 5E-7
+ N = 0.9751
+ BV = 66
+ IBV = 0.0004
+ RS = 0.3422
+ CJO = 1.75E-10
+ VJ = 0.3761
+ M = 0.4725
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
*
.SUBCKT PMEG6010CEH 1 2
*
D1 2 1 PMEG6010CEH
R1 2 1 1E+7
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG6010CEH D
+ IS = 3.962E-7
+ N = 0.9774
+ BV = 66
+ IBV = 1.1E-5
+ RS = 0.2033 
+ CJO = 1.103E-10
+ VJ = 0.3756
+ M = 0.4916
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PMEG6010CEJ 1 2
*
D1 2 1 PMEG6010CEJ
R1 2 1 1E+7
*
* The Resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
.MODEL PMEG6010CEJ D
+ IS = 3.962E-7
+ N = 0.9774
+ BV = 66
+ IBV = 1.1E-5
+ RS = 0.2033 
+ CJO = 1.103E-10
+ VJ = 0.3756
+ M = 0.4916
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT PRLL5817 1 2 
*
* The resistor R1 does not reflect
* a physical device. Instead it
* improves modeling in the reverse
* mode of operation.
*
R1 1 2 7.5E+5
D1 1 2  PRLL5817 
*
.MODEL PRLL5817 
+ IS = 5.559E-006 
+ N = 1.013 
+ BV = 22 
+ IBV = 0.01 
+ RS = 0.04246 
+ CJO = 2.653E-010 
+ VJ = 0.4107 
+ M = 0.4828 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT PRLL5818 1 2 
*
*The resistor R1 does not reflect
*a physical device. Instead it
*improves modeling in the reverse
*mode of operation.
*
R1 1 2 1.249E+7 
D1 1 2 PRLL5818
*
.MODEL PRLL5818
+ IS = 7.403E-6 
+ N = 1.031 
+ BV = 33
+ IBV = 0.01
+ RS = 0.2209 
+ CJO = 1.889E-10 
+ VJ = 0.3661 
+ M = 0.4864 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT PRLL5819 1 2
*
*The resistor R1 does not reflect
*a physical device. Instead it
*improves modeling in the reverse
*mode of operation.
*
R1 1 2 2E+6 
D1 1 2 PRLL5819
*
.MODEL PRLL5819  
+ IS = 6.678E-6 
+ N = 1.04 
+ BV = 44 
+ IBV = 0.01
+ RS = 0.1936 
+ CJO = 1.83E-10 
+ VJ = 0.3235 
+ M = 0.4694 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT RB751CS40 1 2
*
* The Resistor R1 does not reflect 
* a physical device. Instead it
* improves modeling in the reverse 
* mode of operation.
*
R1 2 1 8E+08
D1 2 1 RB751CS40
*
.MODEL RB751CS40 D 
+ IS = 9.114E-9 
+ N = 1.006 
+ BV = 45 
+ IBV = 7.8E-5 
+ RS = 4.563 
+ CJO = 3.895E-12 
+ VJ = 0.3192 
+ M = 0.4008 
+ FC = 0.5 
+ EG = 0.69 
+ XTI = 2 
.ENDS
**
.SUBCKT RB751S40 1 2
*
* The resistor does not reflect a
* physical devices.  Instead it improves
* modeling in the reverse mode of
* operation.
*
R1 2 1 8E+08
D1 2 1 RB751S40
*
.MODEL RB751S40 D
+ IS = 8.361E-09
+ N = 1.003
+ BV = 44
+ IBV = 8E-07
+ RS = 5.031
+ CJO = 3.8E-12
+ VJ = 0.1119
+ M = 0.2915
+ FC = 0.5
+ TT = 0
+ EG = 0.69
+ XTI = 2
.ENDS
**
.SUBCKT RB751V40 1 2
*
* The Resistor R1 does not 
* reflect a physical device. 
* Instead it improves modeling
* in the reverse mode of 
* operation.
*
R1 2 1 6.659E+08 
D1 2 1 RB751V40
*
.MODEL RB751V40 D
+ IS = 1.419E-08 
+ N = 1.025 
+ BV = 44 
+ IBV = 1.255E-07 
+ RS = 4.942 
+ CJO = 4.046E-12 
+ VJ = 0.323 
+ M = 0.4154 
+ FC = 0.5 
+ TT = 0 
+ EG = 0.69 
+ XTI = 2
.ENDS
**
.SUBCKT SBD PMEG3002TV 1 2 3 4 5 6 
*
* The Resistors do not 
* reflect physical devices. 
* Instead they improve modeling
* in the reverse mode of 
* operation.
*
R1 1 6 4.771E+06
D1 1 6 PMEG3002TV
R1 4 3 4.771E+06
D1 4 3 PMEG3002TV
*
.MODEL PMEG3002TV D
+ IS = 9.539E-07
+ N = 1.007
+ BV = 35
+ IBV = 4E-05
+ RS = 0.4678
+ CJO = 3.518E-11
+ VJ = 0.3193
+ M = 0.4687
+ FC = 0.5
+ EG = 0.69
+ XTI = 2
.ENDS
*