*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms  Diodes Inc. -
.MODEL 2N7002  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=39.9u RD=1.05 RS=1.05
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=21Dec2011
*VERSION=1
*PINS 10=D 20=G 30=S

.SUBCKT DMN6068 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 380E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 426E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23 2n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 244E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS

*DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2011
*VERSION=1

.SUBCKT DMN6066 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 420E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 420E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 220E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT

*SRC=2N7002A;DI_2N7002A;MOSFETs N;Enh;60.0V 0.115A 5.00ohms  Diodes Inc. MOSFET
.MODEL DI_2N7002A  NMOS( LEVEL=1 VTO=2.00 KP=55.7m  GAMMA=2.48
+ PHI=.75  LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=9.88p 
+ CBS=11.9p  CGSO=16.8n CGDO=14.0n CGBO=199n  )
*   -- Assumes default L=100U W=100U --

*SRC=2N7002K;DI_2N7002K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_2N7002K  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN601DMK;DI_DMN601DMK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601DMK  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN601K;DI_DMN601K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601K  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms  Diodes Inc. MOSFET 
.MODEL DI_BS870  NMOS( LEVEL=1 VTO=2.00 KP=32.0m  GAMMA=2.48
+ PHI=.75  LAMBDA=86.8u RD=0.490 RS=0.490
+ IS=125f  PB=0.800 MJ=0.460 CBD=29.8p 
+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --

*---------- DMN4031SSD Spice Model ----------
.SUBCKT DMN4031SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.009995 
RG 20 2 1.56 
CGS 2 3 8.311E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.001  VTO = 3.195 
+ TOX = 6E-008  NSUB = 1E+016  KP = 26.57  U0 = 400  KAPPA = 32.33 
.MODEL DCGD D  CJO = 3.144E-010  VJ = 0.09587  M = 0.3239 
.MODEL DSUB D  IS = 1.133E-011  N = 1.136  RS = 1.044E-015  BV = 40  CJO = 1.281E-010  VJ = 0.3722  M = 0.5383 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN4031SSD Spice Model v1.0 Last Revised 2011/8/15

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=28/05/2009
*VERSION=1
*PIN_ORDER         D, G, S
*
.SUBCKT DMN5L06K 3 4 5
M1 6 2 8 8 Nmod1
M2 6 2 8 8 Nmod2
M3 6 2 8 8 Nmod3
J1 3 5 30 Jmod1
RG 4 21 135
RD 30 6 Rmod2 0.02
RS 8 5 Rmod2 0.72
RL 3 5 1E9
D1 5 3 Dmod1
D2 20 6 Dmod2
D3 4 40 Dmod3
D4 5 40 Dmod3
Egs1 2 20 2 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
V1 31 5 1
I1 32 5 1
R1 31 32 Rmod1 1
Etg 2 21 32 5 1
C1 2 8 55E-12
C2 2 3  9E-12
C3 15 14 58E-12
C4 16 8 35E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=1
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=0 VOFF=-2
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=0
.MODEL Nmod1 NMOS LEVEL=1 VTO=0.94 KP=4 LAMBDA=0.15 IS=1E-15 N=10
.MODEL Nmod2 NMOS LEVEL=1 VTO=0.77 KP=.4  IS=1E-15 N=10
.MODEL Nmod3 NMOS LEVEL=1 VTO=0.60 KP=.04  IS=1E-15 N=10
.MODEL Jmod1 NJF VTO=-3.1 BETA=0.5 VTOTC=-0.006 LAMBDA=0.15
.MODEL Dmod1 D IS=5.516E-13 RS=0.2084 N=1 CJO=18.5E-12 VJ=0.46 M=0.44 TT=20E-9 BV=52
.MODEL Dmod2 D CJO=33E-12 VJ=0.4 M=0.44 RS=0.1
.MODEL Dmod3 D RS=1 BV=20
.MODEL Rmod1 RES (TC1=-1.5e-3 TC2=-1E-6)
.MODEL Rmod2 RES (TC1=8e-3 TC2=2E-5)
.ENDS
*
*$

*SRC=DMN601TK;DI_DMN601TK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601TK  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*---------- DMN66D0LT Spice Model ----------
.SUBCKT DMN66D0LT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.009081  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN66D0LT Spice Model v1.0 Last Revised 2011/1/13

*SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms  Diodes Inc. MOSFET 
.MODEL DI_MMBF170  NMOS( LEVEL=1 VTO=2.10 KP=18.8m  GAMMA=2.60 
+ PHI=.75  LAMBDA=1.04m RD=0.294 RS=0.294 
+ IS=250f  PB=0.800 MJ=0.460 CBD=29.8p 
+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  ) 
*   -- Assumes default L=100U W=100U --

*
*Zetex ZVN4106F Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT ZVN4106F 3 4 5
* Nodes          D G S
M1 3 2 5 5 MOD1
RG 4 2 343
RL 3 5 6E6
C1 2 5 23.5P
C2 3 2 4.5P 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS ZVN4106F
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZVN4206A Spice Model v2.0 Last Revised 14/07/08
*
.SUBCKT ZVN4206A 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 30
RD 3 6 0.05
RS 8 5 0.5 
RL 3 5 6E6
D1 5 3 DMOD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 80E-12
C2 2 3 25E-12
C3 15 14 75E-12 
C4 16 8 40E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
.MODEL DMOD D IS=6E-13 RS=.13 N=1.01
.ENDS  ZVN4206A
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN4306A Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT ZVN4306A 3 4 5
*NODES: DRAIN GATE SOURCE
M1 3 2 5 5 MOD1
RG 4 2 108
RL 3 5 6E6
C1 2 5 224.5E-12
C2 3 2 10.5E-12 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
+CBD=405E-12 PB=1 LAMBDA=0
.MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
.ENDS ZVN4306A
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZVN4306G Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT ZVN4306G 3 4 5
*NODES: DRAIN GATE SOURCE
M1 3 2 5 5 MOD1
RG 4 2 108
RL 3 5 6E6
C1 2 5 224.5E-12
C2 3 2 10.5E-12 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
+CBD=405E-12 PB=1 LAMBDA=0
.MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
.ENDS ZVN4306G
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET - One element of dual
.MODEL DI_2N7002DW  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=34.2u RD=0.448 RS=0.448
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )  *   -- Assumes default L=100U W=100U --

*SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms  Diodes Inc. MOSFET .MODEL DI_2N7002E  NMOS( LEVEL=1 VTO=2.50 KP=781u  GAMMA=3.10
+ PHI=.75  LAMBDA=83.2u RD=0.560 RS=0.560
+ IS=120f  PB=0.800 MJ=0.460 CBD=44.5p
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )
*   -- Assumes default L=100U W=100U --

*SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET 
.MODEL DI_2N7002T  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --

*SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET 
.MODEL DI_2N7002W  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.448 RS=0.448
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --

*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN55D0UT  NMOS( LEVEL=1 VTO=1.00 KP=0.324  GAMMA=1.24
+ PHI=.75  LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f  PB=0.800 MJ=0.460 CBD=9.60p 
+ CBS=11.5p  CGSO=25.2n CGDO=21.0n CGBO=204n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN5L06VK  NMOS( LEVEL=1 VTO=1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN5L06VK  NMOS( LEVEL=1 VTO=1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN66D0LDW  NMOS( LEVEL=1 VTO=2.00 KP=55.7m  GAMMA=2.48
+ PHI=.75  LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=9.88p 
+ CBS=11.9p  CGSO=16.8n CGDO=14.0n CGBO=199n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN66D0LW  NMOS( LEVEL=1 VTO=2.00 KP=55.7m  GAMMA=2.48
+ PHI=.75  LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=9.88p 
+ CBS=11.9p  CGSO=16.8n CGDO=14.0n CGBO=199n  )
*   -- Assumes default L=100U W=100U --

*
*Zetex ZVN3306F Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT ZVN3306F 3 4 5
*                D G S
M1 3 2 5 5 N3306M
RG 4 2 270
RL 3 5 1.2E8
C1 2 5 28E-12
C2 3 2 3E-12 
D1 5 3 N3306D
*
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS ZVN3306F
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZVN4206AV Spice Model v2.0 Last Revised 14/07/08
*
.SUBCKT ZVN4206AV 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 30
RD 3 6 0.05
RS 8 5 0.5 
RL 3 5 6E6
D1 5 3 DMOD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 80E-12
C2 2 3 25E-12
C3 15 14 75E-12 
C4 16 8 40E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
.MODEL DMOD D IS=6E-13 RS=.13 N=1.01
.ENDS  ZVN4206AV
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN4206G Spice Model v2.0 Last Revised 14/07/08
*
.SUBCKT ZVN4206G 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 30
RD 3 6 0.05
RS 8 5 0.5 
RL 3 5 6E6
D1 5 3 DMOD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 80E-12
C2 2 3 25E-12
C3 15 14 75E-12 
C4 16 8 40E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
.MODEL DMOD D IS=6E-13 RS=.13 N=1.01
.ENDS  ZVN4206G
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN4206GV Spice Model v2.0 Last Revised 14/07/08
*
.SUBCKT ZVN4206GV 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 30
RD 3 6 0.05
RS 8 5 0.5 
RL 3 5 6E6
D1 5 3 DMOD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 80E-12
C2 2 3 25E-12
C3 15 14 75E-12 
C4 16 8 40E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
.MODEL DMOD D IS=6E-13 RS=.13 N=1.01
.ENDS  ZVN4206GV
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN4306AV Spice Model v1.0 Last Revised 23/3/06
*
.SUBCKT ZVN4306AV 3 4 5
*NODES: DRAIN GATE SOURCE
M1 3 2 5 5 MOD1
RG 4 2 108
RL 3 5 6E6
C1 2 5 224.5E-12
C2 3 2 10.5E-12 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
+CBD=405E-12 PB=1 LAMBDA=0
.MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
.ENDS ZVN4306AV
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZVN4306GV Spice Model v1.0 Last Revised 23/2/06
*
.SUBCKT ZVN4306GV 3 4 5
*NODES: DRAIN GATE SOURCE
M1 3 2 5 5 MOD1
RG 4 2 108
RL 3 5 6E6
C1 2 5 224.5E-12
C2 3 2 10.5E-12 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
+CBD=405E-12 PB=1 LAMBDA=0
.MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
.ENDS ZVN4306GV
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXM64N035L3 Spice Model v1.1 Last Revised 24/1/03
*
.SUBCKT ZXM64N035L3 3 4 5
*----connections----D-G-S
*
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 5
RIN 2 8 200E6
RD 3 6 RDSMOD 0.02
RS 8 5 RDSMOD 0.004 
RL 3 5 35E6
C1 2 8 810E-12
C2 2 3 100E-12 
C3 15 14 1050E-12
C4 16 8 1100E-12
D1 5 3 DMOD1
S1 2 15 14 13 SMOD1a
S2 13 15 14 13 SMOD1b
S3 16 13 13 8 SMOD2a
S4 16 2 13 8 SMOD2b
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
.MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=15 CBD=512E-12 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.1
.MODEL DMOD1 D IS=6E-13 RS=0.025 BV=42 IBV=1E-6 TT=21e-9
.MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=1.5
.MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1.5
.MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
.MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
.MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5)
.ENDS  ZXM64N035L3
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN6A07F Spice Model v1.0 Last Revised 29/6/05
*              
.SUBCKT ZXMN6A07F 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=.6E-6 W=0.34
M2 5 2 5 6 Pmod L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 5 3  Dbodymod
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
+CJO=71e-12  TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS ZXMN6A07F
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN6A08E6 Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN6A08E6 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12  BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08E6
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/11/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A08K 30 40 50
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12  BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08K
*
*$

*
*Zetex ZVN2106A Spice Model v2.0 Last Revised 30/6/08
*
.SUBCKT ZVN2106A 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N2106AM
M2 6 2 8 8 N2106AMS
RG 4 2 15
RD 3 6 0.25
RS 8 5 0.94 
RL 3 5 100E6
D1 5 3 N2106AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 72E-12
C2 2 3  20E-12
C3 15 14 70E-12 
C4 16 8 83E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 CBD=50E-12 PB=1
.MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
.MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN2106A
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN2106G Spice Model v2.0 Last Revised 30/6/08
*
.SUBCKT ZVN2106G 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N2106AM
M2 6 2 8 8 N2106AMS
RG 4 2 15
RD 3 6 0.25
RS 8 5 0.94 
RL 3 5 100E6
D1 5 3 N2106AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 72E-12
C2 2 3  20E-12
C3 15 14 70E-12 
C4 16 8 83E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-5.5 VOFF=-4.5
.MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 CBD=50E-12 PB=1
.MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
.MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN2106G
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA

*
*Zetex ZVN3306A Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT ZVN3306A 3 4 5
*                D G S
M1 3 2 5 5 N3306M
RG 4 2 270
RL 3 5 1.2E8
C1 2 5 28E-12
C2 3 2 3E-12 
D1 5 3 N3306D
*
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS ZVN3306A
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07
*
.SUBCKT ZXMN4A06G 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=1.7
M2 5 2 5 6 Pmod L=1.3E-6 W=0.75
RG 4 2 1.6
RIN 2 5 1E12
RD 3 6 Rmod 0.012
RS 5 55 Rmod 0.012
RL 3 5 3E12
C1 2 5 75E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 55 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75
+KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3
+CJO=250e-12  BV=44 TT=17e-9)
.MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5)
.ENDS ZXMN4A06G
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07
*
.SUBCKT ZXMN4A06K 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=1.7
M2 5 2 5 6 Pmod L=1.3E-6 W=0.75
RG 4 2 1.6
RIN 2 5 1E12
RD 3 6 Rmod 0.012
RS 5 55 Rmod 0.012
RL 3 5 3E12
C1 2 5 75E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 55 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75
+KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3
+CJO=250e-12  BV=44 TT=17e-9)
.MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5)
.ENDS ZXMN4A06K
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN6A07Z Spice Model v1.0 Last Revised 29/6/05
*              
.SUBCKT ZXMN6A07Z 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=.6E-6 W=0.34
M2 5 2 5 6 Pmod L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 5 3  Dbodymod
LD 3 30 0.6E-9
LG 4 40 2.0E-9
LS 5 50 2.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
+CJO=71e-12  TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS ZXMN6A07Z
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN6A08G Spice Model v2.0 Last Revised 24/10/07
*
.SUBCKT ZXMN6A08G 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12  BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08G
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=3
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A09K 1 2 3
M11 20 21 22 22 Nnmod1
M12 20 21 22 22 Nnmod2
M13 20 21 22 22 Nnmod3
RG1 26 27 1.15
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.005
RS1 22 23 Rnmod1 0.032
RL1 23 24 60E8
C11 21 22 1400E-12
C12 20 21 65E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
Egs1 33 22 21 22 1
Eds1 34 22 20 22 1
C13 35 34 1000E-12 
C14 36 22 800E-12
S11 21 35 34 33 Snmod1
S12 33 35 34 33 Snmod2
S13 36 33 33 22 Snmod3
S14 36 21 33 22 Snmod4
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Nnmod1 NMOS (VTO=2.7 IS=1E-15 KP=77 CBD=412E-12 PB=1)
.MODEL Nnmod2 NMOS (VTO=1.92 IS=1E-15 KP=0.7 PB=1)
.MODEL Nnmod3 NMOS (VTO=1.4 IS=1E-15 KP=0.003 PB=1)
.MODEL Dnmod1 D (IS=6E-13 RS=.15 N=1.01 TT=5.5e-8 BV=66)
.MODEL Rnmod1 RES (TC1=50e-4 TC2=12E-6)
.MODEL Rnmod2 RES (TC1=-6e-3 TC2=-6E-6)
.MODEL Snmod1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=1.5
.MODEL Snmod2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=-0.5
.MODEL Snmod3 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6
.MODEL Snmod4 VSWITCH RON=.001 ROFF=100 VON=-6 VOFF=-5
.ENDS
*
*$

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A11DN8  1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5
M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45
RG1 26 27 4.5
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.08
RS1 22 23 1E-6
RL1 23 24 10E9
C11 21 22 220E-12
C12 20 21 1E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5
M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45
RG21 66 67 4.5
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.08
RS2 62 63 1E-6
RL2 63 64 10E9
C21 61 62 220E-12
C22 60 61 1E-12
D2 63 64  Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
+RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
.MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
.MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6)
.ENDS
*
*$

*
*Zetex ZXMN6A11G Spice Model v1.0 Last Revised 29/11/07
*
.SUBCKT ZXMN6A11G 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 22 2
RIN1 2 5 2E12
RIN2 22 5 2E12
RD 3 6 Rmod1 0.08
RL 6 5 10E9
C1 2 5 220E-12
C2 3 4 1E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
+RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
.MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
.MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5)
.ENDS ZXMN6A11G
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=1E-6 W=2
M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5
RG2 66 67 2
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.04
RS2 62 63 1e-6
RL2 63 64 10E9
C21 61 62 200E-12
C22 60 61 5E-12
D2 63 64  Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=2
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A25G 1 2 3
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 22 2.3E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=2
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A25K 1 2 3
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/10/2008
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A25N8 1 2 3
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 1 24 1.3E-9
LG1 2 27 1.2E-9
LS1 3 23 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$

*
*Zetex ZXMN7A11G Spice Model v1.0 Last Revised 29/11/07
*
.SUBCKT ZXMN7A11G 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 22 2.2
RIN1 2 5 2E12
RIN2 22 5 2E12
RD 3 6 Rmod1 0.08
RL 6 5 10E9
C1 2 5 220E-12
C2 3 4 1E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 
+RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12  BV=73)
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5)
.MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5)
.ENDS ZXMN7A11G
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*
*Zetex ZXMN7A11K Spice Model v1.0 Last Revised 29/11/07
*
.SUBCKT ZXMN7A11K 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 22 2.2
RIN1 2 5 2E12
RIN2 22 5 2E12
RD 3 6 Rmod1 0.08
RL 6 5 10E9
C1 2 5 220E-12
C2 3 4 1E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 1.3E-9
LG 4 40 2.4E-9
LS 5 50 2.4E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 
+RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12  BV=73)
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5)
.MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5)
.ENDS ZXMN7A11K
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*SRC=DMN5010VAK;DI_DMN5010VAK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5010VAK  NMOS( LEVEL=1 VTO=1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5L06DMK  NMOS( LEVEL=1 VTO=1.20 KP=0.200  GAMMA=1.49
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN5L06DWK;DI_DMN5L06DWK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5L06DWK  NMOS( LEVEL=1 VTO=1.20 KP=0.200  GAMMA=1.49
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN5L06WK;DI_DMN5L06WK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5L06WK  NMOS( LEVEL=1 VTO=1.20 KP=0.200  GAMMA=1.49
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN601DWK;DI_DMN601DWK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601DWK  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN601VK;DI_DMN601VK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601VK  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*SRC=DMN601WK;DI_DMN601WK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_DMN601WK  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=3
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A09DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1
M12 20 21 22 22 Nnmod2
M13 20 21 22 22 Nnmod3
RG1 26 27 1.15
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.005
RS1 22 23 Rnmod1 0.032
RL1 23 24 60E8
C11 21 22 1400E-12
C12 20 21 65E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
Egs1 33 22 21 22 1
Eds1 34 22 20 22 1
C13 35 34 1000E-12 
C14 36 22 800E-12
S11 21 35 34 33 Snmod1
S12 33 35 34 33 Snmod2
S13 36 33 33 22 Snmod3
S14 36 21 33 22 Snmod4
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 Nchannel
M21 60 61 62 62 Nnmod1
M22 60 61 62 62 Nnmod2
M23 60 61 62 62 Nnmod3
RG2 66 67 1.15
RIN2 61 62 1E12
RD2 60 64 Rnmod1 0.005
RS2 62 63 Rnmod1 0.032
RL2 63 64 60E8
C21 61 62 1400E-12
C22 60 61 65E-12
D2 63 64  Dnmod1
Egt2 66 61 70 62 1
Vgt2 62 71 1.0
Igt2 62 70 1.0

*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=3
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A09G 1 2 3
M11 20 21 22 22 Nnmod1
M12 20 21 22 22 Nnmod2
M13 20 21 22 22 Nnmod3
RG1 26 27 1.15
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.005
RS1 22 23 Rnmod1 0.032
RL1 23 24 60E8
C11 21 22 1400E-12
C12 20 21 65E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
Egs1 33 22 21 22 1
Eds1 34 22 20 22 1
C13 35 34 1000E-12 
C14 36 22 800E-12
S11 21 35 34 33 Snmod1
S12 33 35 34 33 Snmod2
S13 36 33 33 22 Snmod3
S14 36 21 33 22 Snmod4
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 23 2.3E-9
.MODEL Nnmod1 NMOS (VTO=2.7 IS=1E-15 KP=77 CBD=412E-12 PB=1)
.MODEL Nnmod2 NMOS (VTO=1.92 IS=1E-15 KP=0.7 PB=1)
.MODEL Nnmod3 NMOS (VTO=1.4 IS=1E-15 KP=0.003 PB=1)
.MODEL Dnmod1 D (IS=6E-13 RS=.15 N=1.01 TT=5.5e-8 BV=66)
.MODEL Rnmod1 RES (TC1=50e-4 TC2=12E-6)
.MODEL Rnmod2 RES (TC1=-6e-3 TC2=-6E-6)
.MODEL Snmod1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=1.5
.MODEL Snmod2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=-0.5
.MODEL Snmod3 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6
.MODEL Snmod4 VSWITCH RON=.001 ROFF=100 VON=-6 VOFF=-5
.ENDS
*
*$

*
*Zetex ZXMN6A11Z Spice Model v1.0 Last Revised 29/11/07
*
.SUBCKT ZXMN6A11Z 30 40 50
*----connections-----D_G_S
M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 22 2
RIN1 2 5 2E12
RIN2 22 5 2E12
RD 3 6 Rmod1 0.08
RL 6 5 10E9
C1 2 5 220E-12
C2 3 4 1E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 1.3E-9
LG 4 40 2.4E-9
LS 5 50 2.4E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
+RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
.MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
.MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5)
.ENDS ZXMN6A11Z
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL

*SRC=BSS138DW;DI_BSS138DW;MOSFETs N;Enh;50.0V 0.200A 1.60ohms  Diodes Inc. MOSFET - One element of dual 
.MODEL DI_BSS138DW  NMOS( LEVEL=1 VTO=1.20 KP=50.0m  GAMMA=1.49
+ PHI=.75  LAMBDA=83.2u RD=0.224 RS=0.224
+ IS=100f  PB=0.800 MJ=0.460 CBD=56.3p 
+ CBS=67.5p  CGSO=96.0n CGDO=80.0n CGBO=324n  )   *   -- Assumes default L=100U W=100U --

*SRC=BSS138W;DI_BSS138W;MOSFETs N;Enh;50.0V 0.200A 1.60ohms  Diodes Inc. MOSFET
.MODEL DI_BSS138W  NMOS( LEVEL=1 VTO=1.20 KP=50.0m  GAMMA=1.49
+ PHI=.75  LAMBDA=83.2u RD=0.224 RS=0.224
+ IS=100f  PB=0.800 MJ=0.460 CBD=56.3p 
+ CBS=67.5p  CGSO=96.0n CGDO=80.0n CGBO=324n  )   *   -- Assumes default L=100U W=100U --

*SRC=DMN5L06TK;DI_DMN5L06TK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  DIODES INC MOSFET
.MODEL DI_DMN5L06TK  NMOS( LEVEL=1 VTO=1.20 KP=0.200  GAMMA=1.49
+ PHI=.75  LAMBDA=625u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --

*
*Zetex 2N7002 Spice Model v1.0 Last Revised 3/5/00
*
.SUBCKT 2N7002 3 4 5
* Nodes        D G S
M1 3 2 5 5 MOD1
RG 4 2 343
RL 3 5 6E6
C1 2 5 23.5P
C2 3 2 4.5P 
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS 2N7002
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL